STMicroelectronics M48Z02-200PC1

Overview

M48Z02-200PC1 from STMicroelectronics is a 16 kbit (2 K × 8) non-volatile zero-power SRAM with integrated lithium battery, CAPHAT™ DIP-24 package, 5 V supply, 200 ns access time, and automatic power-fail write protection. It functions as a drop-in replacement for JEDEC-standard 2 K × 8 SRAMs in real-time clock backup, industrial controller parameter storage, and embedded system configuration retention.

For engineers reviewing the M48Z02-200PC1 datasheet, M48Z02-200PC1 pinout, M48Z02-200PC1 application, or M48Z02-200PC1 equivalent, this page delivers verified timing parameters, battery-backed retention behavior, VPFD voltage thresholds, pin-level control logic for E/G/W, and functional compatibility with DS1220 sockets.

Technical Context

The M48Z02-200PC1 integrates a 2 K × 8 static RAM array with on-die voltage-sense circuitry that monitors VCC and triggers automatic chip deselect when voltage falls within the 4.5–4.75 V VPFD window. At ≤3.0 V (VSO), it switches to lithium battery backup while maintaining full data retention.

Its operation supports three distinct modes: active READ/WRITE (E low, W high/low respectively), CMOS standby (E high), and battery-retention mode (VCC < VPFD min). The device implements indeterminate-state suppression during address transitions and enforces tWHAX/tEHAX hold times to prevent bus contention during mode switching.

Key Specifications

Pinout & Package

24-pin plastic dual in-line package (PDIP-24.7) with integrated CAPHAT™ battery cavity; 600 mil width, 0.3 inch row spacing, and through-hole mounting compatible with standard 2 K × 8 SRAM sockets.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar non-volatile SRAM applications.

Compared with DS1220Y, M48Z02-200PC1 reduces system-level complexity by embedding battery and protection logic; versus M48Z12-200PC1, its higher VPFD threshold provides earlier write lockout in stable 5 V rails, enhancing data security during slow VCC decay.

Availability

M48Z02-200PC1 is available at Aetrix Electronics and suitable for real-time clock backup, industrial PLC configuration storage, and medical device settings retention requiring stable component supply across extended product lifecycles.

Supply support for M48Z02-200PC1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power management ICs, sensors, and memory solutions for industrial, automotive, and consumer markets.

The M48Z02 belongs to ST's ZEROPOWER® SRAM product line, engineered specifically for fail-safe data retention in mission-critical embedded systems where power interruption resilience is mandatory.

FAQ

What is the expected data retention lifetime of M48Z02-200PC1?

The M48Z02-200PC1 guarantees ≥10 years of data retention at 0–70 °C using its integrated lithium carbon monofluoride button cell. This rating assumes continuous battery backup during VCC absence and excludes degradation from repeated thermal cycling or mechanical shock beyond specification limits.

How does the Battery OK (BOK) flag function during power-up?

Upon power restoration, the M48Z02-200PC1 checks internal battery voltage against a threshold. If below specification, the BOK flag is set and the first attempted write is blocked until the complement-read/write sequence clears it-ensuring no corrupted writes occur with marginal battery charge.

Can M48Z02-200PC1 be used in place of standard 2 K × 8 SRAMs without circuit modification?

Yes-it is pin- and function-compatible with JEDEC-standard 2 K × 8 SRAMs like the DS1220. No changes to address/data bus routing or timing constraints are required; only ensure VCC decoupling meets the 0.1 µF ceramic recommendation to suppress noise-induced VPFD false triggers.

What protection is recommended against negative VCC transients during battery backup mode?

STMicroelectronics recommends a Schottky diode (e.g., 1N5817 for through-hole) connected cathode-to-VCC and anode-to-VSS. This clamps negative spikes below –0.3 V-the absolute maximum rating-to prevent data corruption while the lithium cell powers the SRAM array.