STMicroelectronics M48Z08-100PC1

Overview

M48Z08-100PC1 from STMicroelectronics is a 64 kbit (8 k × 8) non-volatile zero-power SRAM with integrated lithium battery, ultra-low power-fail control circuitry, and 100 ns read/write cycle time. It operates at 4.75–5.5 V, provides automatic write protection during power failure, and retains data for ≥11 years on internal battery backup. Used in industrial controllers and legacy system memory retention where EEPROM write endurance or flash latency is unacceptable.

For engineers reviewing the M48Z08-100PC1 datasheet, M48Z08-100PC1 pinout, M48Z08-100PC1 application, or M48Z08-100PC1 equivalent, key selection criteria include VPFD window (4.5–4.75 V), CAPHAT™ DIP-28 mechanical compatibility, battery-backed data retention without external circuitry, and JEDEC-standard 8 k × 8 SRAM pin/function equivalence to DS1225.

Technical Context

The M48Z08-100PC1 integrates a static RAM array, voltage-sense switching circuitry, and a sealed lithium button cell in a single PDIP-28 CAPHAT™ package. Its power-fail detection triggers write protection when VCC drops into the 4.5–4.75 V VPFD window and switches to battery backup below 3.0 V (VSO).

It supports standard asynchronous SRAM timing: tAVQV = 100 ns, tELQV = 100 ns, tGLQV = 50 ns, with CMOS/TTL-compatible inputs and three-state outputs controlled by E and G. READ and WRITE cycles are symmetrical, and unlimited write cycles are guaranteed under valid VCC.

Key Specifications

Pinout & Package

Package: 28-pin plastic DIP (PDIP-28.7), 600 mil width, with integrated lithium battery housed in ST's CAPHAT™ structure. Dimensions: 39.37 mm × 17.83 mm × 9.65 mm (L × W × H).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar non-volatile SRAM applications.

Compared with DS1225Y-100, M48Z08-100PC1 reduces bill-of-materials and improves long-term reliability by integrating battery and power-fail logic; compared with M48Z18-100PC1, it targets stricter 4.75–5.5 V systems with earlier write protection onset.

Availability

M48Z08-100PC1 is available at Aetrix Electronics and suitable for industrial PLCs, medical diagnostics equipment, legacy system retrofits, and avionics modules requiring stable component supply with guaranteed 11-year data retention and JEDEC-compliant timing.

Supply support for M48Z08-100PC1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power management ICs, sensors, and memory solutions for industrial, automotive, and consumer markets.

The M48Z08 belongs to ST's ZEROPOWER® SRAM product line, engineered specifically for applications demanding seamless, maintenance-free non-volatility in legacy and safety-critical systems without external backup circuitry.

FAQ

What is the expected lifetime of the internal lithium battery?

The integrated lithium carbon monofluoride button cell provides ≥11 years of data retention at 25 °C when VCC remains below VSO (3.0 V). This value is measured and specified in the datasheet (Table 10, tDR), and reflects accumulated backup time-not calendar life. Battery performance degrades with temperature; operation above 70 °C reduces effective retention duration.

Can M48Z08-100PC1 be used in surface-mount designs?

No - M48Z08-100PC1 is exclusively offered in the through-hole PDIP-28 CAPHAT™ package with integrated battery. ST does not manufacture a surface-mount variant. Attempting reflow soldering will damage the internal lithium cell. For SMT applications, consider discrete SRAM + external battery-supervisor solutions, though these lack the integration and qualification of the CAPHAT™ platform.

How does the VPFD window prevent data corruption during brownout?

When VCC falls between 4.5 V and 4.75 V (VPFD min/max), the internal circuitry forces chip deselect and write protection before VCC reaches levels where SRAM logic becomes unreliable. Outputs go high-Z, inputs are ignored, and writes are blocked - ensuring no partial or metastable writes occur. This hardware-enforced window is independent of software or external supervision.

Is decoupling capacitance required, and what value is recommended?

Yes - a 0.1 µF ceramic bypass capacitor is mandatory between VCC and VSS, placed as close as possible to pins 28 and 14. This suppresses VCC noise and negative transients that could falsely trigger the VPFD window or corrupt data during battery backup mode. The datasheet explicitly recommends this value (Section 3.4, Figure 7) and warns that omission increases risk of spurious write protection or data loss.