STMicroelectronics M48Z12-150PC1

Overview

M48Z12-150PC1 from STMicroelectronics is a 16 kbit (2 K × 8) non-volatile zero-power SRAM with integrated lithium battery, CAPHAT™ DIP-24 package, 150 ns access time, and automatic power-fail write protection triggered at 4.2–4.5 V. It functions as a drop-in replacement for JEDEC-standard 2 K × 8 SRAMs in real-time clock backup, configuration storage, and industrial controller data retention.

For engineers reviewing the M48Z12-150PC1 datasheet, M48Z12-150PC1 pinout, M48Z12-150PC1 application, or M48Z12-150PC1 equivalent, this page delivers verified timing parameters, battery-backed retention behavior, VPFD voltage thresholds, pin-level control logic for E/G/W, and functional alternatives for legacy socket replacement.

Technical Context

The M48Z12-150PC1 integrates a 2 K × 8 static RAM array, ultra-low-power voltage-sense circuitry, and a sealed lithium button cell within a single CAPHAT™ DIP-24 package. Its power-fail detection operates between 4.2 V and 4.5 V (VPFD), automatically disabling writes and switching to battery backup when VCC drops below ~3.0 V (VSO).

It supports standard SRAM read/write protocols with identical tAVQV and tAVAV values (150 ns), tri-state outputs controlled by E and G, and CMOS/TTL-compatible input thresholds. The BOK (Battery OK) flag is latched on power-up and blocks first write until cleared-enabling system-level battery health verification before data commit.

Key Specifications

Pinout & Package

Package: 24-pin plastic DIP (PDIP24.7) with integrated CAPHAT™ battery housing - 34.8 mm × 18.34 mm × 9.65 mm body, 2.54 mm lead pitch, through-hole mounting.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar non-volatile SRAM applications.

Compared with DS1220Y-150, M48Z12-150PC1 reduces design complexity by integrating battery and power-fail logic; compared with M48Z02-150PC1, it offers lower VPFD for earlier brownout response-critical in unregulated 5 V supplies.

Availability

M48Z12-150PC1 is available at Aetrix Electronics and suitable for industrial PLC configuration storage, embedded real-time clock backup, and medical device event logging requiring stable component supply and long-term lifecycle support.

Supply support for M48Z12-150PC1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and memory solutions for industrial, automotive, and consumer markets.

The M48Z12 belongs to ST's ZEROPOWER® SRAM product line-engineered specifically for battery-backed data retention in legacy and space-constrained systems where external power management is impractical.

FAQ

What is the expected battery lifetime under continuous data retention?

The M48Z12-150PC1's integrated lithium carbon monofluoride cell guarantees ≥10 years of data retention at 0–70 °C with no power applied. This rating assumes typical commercial temperature cycling and accounts for self-discharge; actual field life may exceed 15 years in cooler environments with minimal thermal stress.

How does the BOK (Battery OK) flag function during power-up?

On power-up, the M48Z12-150PC1 checks battery voltage against a threshold and sets the BOK flag if insufficient. Reading any memory location returns complemented data if BOK is active; writing the complement clears the flag and resumes normal operation-enabling deterministic battery health validation before data commit.

Can M48Z12-150PC1 replace DS1220 in existing sockets without modification?

Yes-M48Z12-150PC1 is pin- and function-compatible with DS1220, sharing identical DIP-24 footprint, address/data/control pin assignments, and READ/WRITE timing. No PCB changes or firmware updates are required, though VPFD behavior differs and should be verified against system brownout profile.

What protection is recommended against VCC negative transients?

ST recommends placing a Schottky diode (e.g., 1N5817 for through-hole, MBRS120T3 for SMT) from VCC to VSS (cathode to VCC) to clamp negative spikes below –0.3 V-preventing data corruption during battery backup mode. A 0.1 µF ceramic bypass capacitor is also required at the VCC pin.