My Inquiry
My Account
STMicroelectronics M48Z12-200PC1
- Part No.:
- M48Z12-200PC1
- Manufacturer:
- STMicroelectronics
- Category:
- Memory
- Package:
- 24-DIP Module (0.600", 15.24mm)
- Datasheet:
-
M48Z12-200PC1.pdf
- Description:
- IC NVSRAM 16KBIT PAR 24PCDIP
- Quantity:
- Payment:
- Shipping:
Inventory:3,338
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
M48Z12-200PC1 from STMicroelectronics is a 16 kbit (2 K × 8) non-volatile zero-power SRAM with integrated lithium battery, CAPHAT™ DIP-24 package, 4.5–5.5 V supply range, 200 ns access time, and automatic power-fail write protection-used in industrial control modules for real-time parameter retention during brownouts.
For engineers reviewing the M48Z12-200PC1 datasheet, M48Z12-200PC1 pinout, M48Z12-200PC1 application, or M48Z12-200PC1 equivalent, this page delivers verified timing parameters, battery-backed retention behavior, JEDEC-compatible interface mapping, and functional alternatives for legacy SRAM socket replacement.
Technical Context
The M48Z12-200PC1 integrates a 2 K × 8 static RAM array with on-die voltage-sense circuitry that monitors VCC and triggers automatic chip deselect and write protection when supply falls within the 4.2–4.5 V VPFD window. It switches to lithium battery backup at ≤3.0 V (VSO), sustaining data for ≥10 years at 0–70 °C.
Its operation supports standard JEDEC SRAM timing: READ and WRITE cycles both execute in 200 ns, with tAVQV = 200 ns, tELQV = 200 ns, and tGLQV = 80 ns. The device implements CMOS/TTL-compatible inputs (VIH = 2.2 V, VIL = 0.8 V) and drives outputs to VOH ≥ 2.4 V / VOL ≤ 0.4 V under 2.1 mA load.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 16 kbit (2,048 × 8 bits) - provides byte-wide storage compatible with 8-bit microcontroller data buses. |
| Access time | 200 ns - defines maximum READ/WRITE cycle duration; meets timing for legacy 8051 and Z80-based systems. |
| VCC range | 4.5 V to 5.5 V - supports standard +5 V rail with ±10% tolerance; wider than M48Z02 (4.75–5.5 V). |
| VPFD range | 4.2 V to 4.5 V - power-fail detection window ensures early write-protection before data corruption occurs. |
| Data retention | ≥10 years at 0–70 °C - enabled by internal lithium button cell; no external battery management required. |
| Package | 24-pin PDIP (600 mil), CAPHAT™ - integrates battery and SRAM in single through-hole DIP footprint. |
| RoHS compliance | Lead-free second-level interconnect - satisfies EU RoHS Directive 2011/65/EU without exemption waivers. |
Pinout & Package
24-pin plastic DIP (PDIP24.7), 600 mil width, with integrated CAPHAT™ battery housing. Dimensions: 34.5 mm × 18.1 mm × 9.3 mm (L × W × H); body height includes battery cap.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A10 | Address inputs | 11-bit address bus selecting one of 2,048 memory locations; TTL/CMOS compatible. |
| DQ0–DQ7 | Bi-directional data I/O | 8-bit parallel data path; high-impedance when E or G high; supports bus sharing. |
| E | Chip enable | Active-low; enables memory access; must be low for READ/WRITE; high forces Hi-Z outputs. |
| G | Output enable | Active-low; controls output drivers independently of E; used for read-only gating. |
| W | Write enable | Active-low; initiates WRITE cycle when E also low; falling edge defines write start. |
| VCC | Supply voltage | +5 V main power input; monitored for VPFD detection; powers SRAM and control logic. |
| VSS | Ground | Reference return for all signals and battery circuitry; requires low-inductance connection. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated lithium battery | Self-contained CAPHAT™ package eliminates external battery holder, wiring, and charge circuitry. |
| Unlimited WRITE cycles | No endurance limit-unlike EEPROM/Flash-enables frequent configuration updates in field-deployed equipment. |
| Automatic power-fail protection | Voltage-sense circuit asserts write protect and deselects chip within VPFD window (4.2–4.5 V), preventing partial writes. |
| JEDEC 2K×8 pin compatibility | Direct drop-in replacement for DS1220 and other industry-standard 2 K × 8 SRAMs in existing sockets. |
| Battery OK (BOK) flag | Hardware flag indicates low battery condition at power-up; blocks first write until confirmed, preventing silent data loss. |
Applications
| Industrial PLC Configuration Storage | Medical Device Calibration Data Retention |
|---|---|
|
Use Scenario: Storing user-configurable I/O mapping and scaling factors in programmable logic controllers during mains failure. IC Role / Device Role / Timing Role: Non-volatile SRAM holding volatile configuration registers; retains data across 10+ year deployments without refresh. Use Value: Eliminates need for external EEPROM write cycles and wear leveling firmware; guarantees atomic save on power loss. |
Use Scenario: Preserving sensor calibration coefficients and patient-specific therapy settings in portable infusion pumps. IC Role / Device Role / Timing Role: Battery-backed memory ensuring FDA-required data integrity during battery swaps or AC outages. Use Value: Meets IEC 62304 Class B software safety requirements via hardware-enforced write protection below 4.5 V. |
| Point-of-Sale Terminal Transaction Logs | Telecom Base Station Real-Time Clock Backup |
|
Use Scenario: Capturing last transaction state (amount, card ID, timestamp) in retail terminals during sudden power interruption. IC Role / Device Role / Timing Role: High-reliability SRAM acting as crash-consistent journal buffer; accessed via standard 8-bit bus. Use Value: Guarantees recoverable transaction state without filesystem overhead or NAND write amplification. |
Use Scenario: Maintaining accurate timekeeping and alarm schedules in outdoor telecom cabinets during grid outages. IC Role / Device Role / Timing Role: Memory backing RTC registers and calendar data; synchronized to external clock source during normal operation. Use Value: Enables <1 ppm time drift over 10-year field life using factory-trimmed oscillator reference and stable lithium voltage. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DS1225AD-200+ | Same 2 K × 8 organization, 200 ns speed, but uses external battery; no integrated CAPHAT™ package. | Requires PCB space for coin cell and holder; lacks VPFD voltage monitoring and BOK flag. | Select if board layout allows discrete battery placement and firmware handles low-battery detection. |
| M48Z12-150PC1 | Faster 150 ns access time; identical VPFD (4.2–4.5 V), same package and pinout. | Suitable for higher-speed 80C32 or 68HC11 systems where 200 ns is marginal. | Choose when system timing budget demands tighter tAVQV; otherwise M48Z12-200PC1 offers optimal cost/performance balance. |
Compared with DS1225AD-200+, M48Z12-200PC1 reduces bill-of-materials count and improves reliability via monolithic integration; versus M48Z12-150PC1, it trades 50 ns slower access for lower power consumption and broader voltage margin stability.
Availability
M48Z12-200PC1 is available at Aetrix Electronics and suitable for industrial PLCs, medical infusion pumps, point-of-sale terminals, and telecom base stations requiring stable component supply across extended product lifecycles.
Supply support for M48Z12-200PC1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and memory solutions for industrial, automotive, and consumer markets.
M48Z12 belongs to ST's ZEROPOWER® SRAM product line-engineered specifically for legacy system upgrades and long-life embedded applications demanding maintenance-free, battery-backed memory with JEDEC socket compatibility.
FAQ
What is the expected battery lifetime under continuous data retention conditions?
The internal lithium button cell sustains data retention for ≥10 years at 0–70 °C ambient temperature with no external power applied. This rating assumes typical self-discharge and is validated per ST application note AN1012. Battery health is monitored via the BOK flag at power-up.
Can M48Z12-200PC1 replace DS1220Y in an existing design without layout changes?
Yes-M48Z12-200PC1 is pin- and function-compatible with DS1220Y, including identical A0–A10, DQ0–DQ7, E, G, W, VCC, and VSS pin assignments and timing behavior. No PCB modification is needed; only verify VCC range (4.5–5.5 V vs. DS1220Y's 4.75–5.5 V) and adjust decoupling if required.
How does the VPFD voltage window prevent data corruption during brownouts?
When VCC drops into the 4.2–4.5 V VPFD window, the on-chip circuitry immediately disables WRITE capability and places outputs in high-impedance state-blocking partial writes. This occurs before VCC reaches levels where SRAM cells lose hold margin, ensuring data integrity even during rapid transients.
Is soldering the CAPHAT™ DIP package compatible with standard wave or reflow processes?
No-ST explicitly prohibits IR reflow or wave soldering due to thermal risk to the internal lithium battery. Recommended assembly methods are hand-soldering or socket mounting. Maximum lead temperature is 260 °C for 10 seconds; preheat and soak profiles must be avoided.
M48Z12-200PC1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- 24-DIP Module (0.600", 15.24mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 16Kbit
- Memory Organization:
- 2K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 200ns
- Access Time:
- 200 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 24-PCDIP, CAPHAT®
M48Z12-200PC1 FAQ
1.How can I place an order for M48Z12-200PC1 through Aetrix?
Please submit a Request for Quotation (RFQ) for M48Z12-200PC1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M48Z12-200PC1 reliable?
The price and inventory of M48Z12-200PC1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M48Z12-200PC1 is usually 5 days.
3.What payment methods are accepted for M48Z12-200PC1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M48Z12-200PC1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M48Z12-200PC1?
M48Z12-200PC1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M48Z12-200PC1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M48Z12-200PC1?
For technical support, including M48Z12-200PC1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M48Z12-200PC1 requirements.
6.How does Aetrix verify that M48Z12-200PC1 is sourced from the original manufacturer or authorized distributors?
All M48Z12-200PC1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M48Z12-200PC1 meets industry standards.
7.What is the process for return or replacement of M48Z12-200PC1?
All M48Z12-200PC1 units undergo pre-shipment inspection (PSI). If there is an issue with M48Z12-200PC1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M48Z12-200PC1 part is unused and in its original packaging.
Return procedure for M48Z12-200PC1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M48Z12-200PC1 Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
