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STMicroelectronics M48Z18-100PC1
- Part No.:
- M48Z18-100PC1
- Manufacturer:
- STMicroelectronics
- Category:
- Memory
- Package:
- 28-DIP Module (0.600", 15.24mm)
- Datasheet:
-
M48Z18-100PC1.pdf
- Description:
- IC NVSRAM 64KBIT PAR 28PCDIP
- Quantity:
- Payment:
- Shipping:
Inventory:240
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Product details
Overview
M48Z18-100PC1 from STMicroelectronics is a 64 kbit (8 k × 8) non-volatile zero-power SRAM with integrated lithium battery, power-fail detection, and automatic write protection. It operates at 4.5–5.5 V, features 100 ns read/write cycle time, and delivers 11-year data retention in battery backup mode. Used in industrial control systems for real-time parameter storage during unexpected power loss.
For engineers reviewing the M48Z18-100PC1 datasheet, M48Z18-100PC1 pinout, M48Z18-100PC1 application, or M48Z18-100PC1 equivalent, key selection considerations include VPFD window (4.2–4.5 V), CAPHAT™ DIP-28 mechanical compatibility, battery-backed data retention without external circuitry, and JEDEC-standard 8 k × 8 SRAM functional replacement capability.
Technical Context
The M48Z18 integrates a static RAM array, voltage-sensing comparator, battery switchover circuitry, and write-protection logic into a monolithic die housed in a CAPHAT™ DIP-28 package. Its power-fail detect circuit monitors VCC continuously and initiates chip deselect when voltage falls within the 4.2–4.5 V VPFD window.
Upon VCC dropping below 3.0 V (VSO), the internal lithium button cell automatically powers the SRAM array while placing all I/Os in high-impedance state. The device supports standard TTL/CMOS-compatible control timing with tAVQV = 100 ns and tWHAX = 10 ns, enabling drop-in replacement for legacy DS1225 sockets.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 64 kbit (8 k × 8) - provides byte-wide access to 8,192 addressable locations |
| Read/write cycle time | 100 ns - enables direct substitution in systems designed for DS1225Y or similar 100 ns SRAMs |
| VPFD range | 4.2 V to 4.5 V - defines precise voltage window where automatic write protection activates |
| VSO threshold | 3.0 V - triggers seamless switchover from VCC to internal lithium battery |
| Data retention | ≥11 years on battery - guaranteed minimum retention under VCC < 3.0 V at 25 °C |
| Supply voltage range | 4.5 V to 5.5 V - compatible with standard 5 V logic rails and tolerant of ±10% regulation |
| Operating temperature | 0 °C to 70 °C - qualified for commercial-grade industrial embedded applications |
| Package | PDIP-28 (600 mil, CAPHAT™) - includes encapsulated lithium cell; 39.37 mm × 17.83 mm footprint |
Pinout & Package
Package: 28-pin plastic DIP (PDIP-28.7) with integrated CAPHAT™ lithium battery module. Dimensions: 39.37 mm × 17.83 mm × 8.89 mm (L × W × H), 600 mil width, 2.54 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A12 | Address inputs | 13-bit address bus supporting full 8 k × 8 memory map; compatible with JEDEC-standard addressing |
| DQ0–DQ7 | Data I/O lines | Bi-directional 8-bit data bus with three-state outputs controlled by E and G |
| E | Chip enable | Active-low signal enabling memory access; must be held high during VCC power-up recovery to prevent inadvertent writes |
| G | Output enable | Active-low signal controlling output drivers; used to manage bus contention during read cycles |
| W | Write enable | Active-low signal initiating write operations; falling edge synchronizes data capture with address setup |
| VCC | Primary supply | 5 V nominal input; powers SRAM and control logic; monitored for VPFD/VSO thresholds |
| VSS | Ground reference | System ground return; critical for noise immunity during battery switchover |
| NC | No connect | Pins 15 and 28 are internally unconnected; must remain floating per datasheet |
Key Features
| Feature | Design Value |
|---|---|
| Integrated CAPHAT™ battery | Lithium carbon monofluoride cell sealed inside DIP package-eliminates external backup components and socket redesign |
| Automatic power-fail response | Voltage sensing circuit triggers write protection within VPFD window (4.2–4.5 V) and battery switchover at 3.0 V |
| Unlimited write endurance | No wear-out mechanism-supports infinite WRITE cycles unlike EEPROM or Flash alternatives |
| JEDEC pin/function compatibility | Direct replacement for DS1225 and other 8 k × 8 SRAMs-no PCB layout changes required |
| Zero-power data retention | Draws no current from VCC during battery backup; eliminates standby power budget concerns in always-on systems |
Applications
| Industrial PLC Configuration Storage | Medical Device Calibration Data Retention |
|---|---|
|
Use Scenario: Storing runtime configuration parameters in programmable logic controllers during brownout events. IC Role / Device Role / Timing Role: Non-volatile SRAM providing immediate, byte-addressable storage with sub-100 ns access during normal operation and fail-safe holdover. Use Value: Prevents loss of machine-specific settings (I/O mapping, PID coefficients) during grid instability-enabling instant resumption after power recovery. |
Use Scenario: Preserving factory-calibrated sensor offsets and gain coefficients in portable diagnostic equipment. IC Role / Device Role / Timing Role: Battery-backed memory maintaining traceable calibration data across device shutdowns and battery swaps. Use Value: Ensures regulatory compliance (IEC 62304) by guaranteeing calibration integrity without requiring re-validation after each power cycle. |
| Point-of-Sale Terminal Transaction Logging | Telecom Base Station Real-Time Clock Backup |
|
Use Scenario: Capturing incomplete financial transactions during sudden AC failure in retail terminals. IC Role / Device Role / Timing Role: High-reliability SRAM acting as atomic write buffer-guaranteeing transaction atomicity via hardware write protection. Use Value: Eliminates need for complex journaling software; enables deterministic recovery to last consistent state without database corruption. |
Use Scenario: Maintaining accurate timekeeping and alarm registers in cellular infrastructure equipment during mains outage. IC Role / Device Role / Timing Role: Low-leakage memory backing RTC registers and scheduler tables during extended off-grid operation. Use Value: Sustains synchronized network timing (e.g., LTE TDD frame alignment) for >11 years without external battery maintenance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DS1225AD-100+ | Same 8 k × 8 organization and 100 ns speed, but uses external lithium battery and requires separate holder/socket; no integrated VPFD circuit | Requires PCB redesign for battery holder; lacks automatic write protection-needs external supervisor IC | Select if legacy board reuse mandates exact DS1225 mechanical fit without CAPHAT™ integration |
| M48Z12-100PC1 | Same CAPHAT™ DIP-28 package and control architecture, but rated for 4.75–5.5 V supply and 4.5–4.75 V VPFD window | Higher VPFD threshold reduces false-trigger risk in noisy 5 V rails but limits use in 4.5 V systems | Select for designs operating strictly at 5.0 V ±5% with stricter immunity to VCC ripple-induced deselection |
Compared with DS1225AD-100+, M48Z18-100PC1 reduces BOM count by integrating battery and power-fail logic, while M48Z12-100PC1 trades lower VPFD tolerance for improved noise margin-making M48Z18 optimal for 4.5 V–5.5 V flexible-rail industrial systems.
Availability
M48Z18-100PC1 is available at Aetrix Electronics and suitable for industrial PLCs, medical diagnostics equipment, point-of-sale terminals, and telecom base stations requiring stable component supply with long-term data retention assurance.
Supply support for M48Z18-100PC1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power management ICs, sensors, and memory solutions for industrial, automotive, and consumer markets.
The M48Z18 belongs to ST's ZEROPOWER® SRAM product line, engineered specifically to replace volatile memory in mission-critical systems where data persistence during power interruption is non-negotiable-targeting industrial automation, medical instrumentation, and infrastructure equipment.
FAQ
What is the expected battery lifetime under continuous backup conditions?
The internal lithium carbon monofluoride cell guarantees ≥11 years of data retention when VCC remains below 3.0 V at 25 °C. Actual lifetime scales inversely with temperature and cumulative backup time; ST application note AN1012 provides derating curves for elevated ambient conditions up to 70 °C.
Can M48Z18-100PC1 be used in surface-mount designs?
No-it is exclusively offered in through-hole PDIP-28 CAPHAT™ packaging. The integrated battery and hermetic sealing require the mechanical stability of a DIP socket or wave-soldered mounting. ST explicitly prohibits IR reflow or preheat cycles due to battery thermal sensitivity.
How does the VPFD window affect system-level power supply design?
The 4.2–4.5 V VPFD window requires the system's 5 V rail to decay monotonically through this band during brownout. Fast transients or noise spikes within this range may cause spurious write protection; ST recommends 0.1 µF ceramic decoupling and a Schottky clamp (e.g., 1N5817) from VCC to VSS to suppress undershoot.
Is there any special handling required for the internal lithium battery?
Yes-the device contains a non-rechargeable lithium button cell. Per ST environmental guidelines, it must be recycled or disposed of per local regulations governing lithium batteries. Hand-soldering is mandatory; wave soldering is prohibited due to thermal damage risk to the cell.
M48Z18-100PC1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- 28-DIP Module (0.600", 15.24mm)
- Packaging:
- Tube
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 64Kbit
- Memory Organization:
- 8K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 100ns
- Access Time:
- 100 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 28-PCDIP, CAPHAT®
M48Z18-100PC1 FAQ
1.How can I place an order for M48Z18-100PC1 through Aetrix?
Please submit a Request for Quotation (RFQ) for M48Z18-100PC1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M48Z18-100PC1 reliable?
The price and inventory of M48Z18-100PC1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M48Z18-100PC1 is usually 5 days.
3.What payment methods are accepted for M48Z18-100PC1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M48Z18-100PC1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M48Z18-100PC1?
M48Z18-100PC1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M48Z18-100PC1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M48Z18-100PC1?
For technical support, including M48Z18-100PC1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M48Z18-100PC1 requirements.
6.How does Aetrix verify that M48Z18-100PC1 is sourced from the original manufacturer or authorized distributors?
All M48Z18-100PC1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M48Z18-100PC1 meets industry standards.
7.What is the process for return or replacement of M48Z18-100PC1?
All M48Z18-100PC1 units undergo pre-shipment inspection (PSI). If there is an issue with M48Z18-100PC1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M48Z18-100PC1 part is unused and in its original packaging.
Return procedure for M48Z18-100PC1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M48Z18-100PC1 Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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