STMicroelectronics M48Z35Y-70MH1F
- Part No.:
- M48Z35Y-70MH1F
- Manufacturer:
- STMicroelectronics
- Category:
- Memory
- Package:
- 28-SOP (0.350", 8.89mm Width) with SNAPHAT Sockets
- Datasheet:
-
M48Z35Y-70MH1F.pdf
- Description:
- IC NVSRAM 256KBIT PARALLEL 28SOH
- Quantity:
- Payment:

- Shipping:

Inventory:904
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Product details
Overview
M48Z35Y-70MH1F from STMicroelectronics is a 256 Kbit (32 K × 8) non-volatile ZEROPOWER® SRAM with integrated lithium battery, power-fail detection circuitry, and automatic write protection. It operates at 4.5–5.5 V, features 70 ns read/write cycle time, VPFD of 4.2–4.5 V, and delivers 11-year data retention in battery backup mode. It serves as a drop-in replacement for standard JEDEC 32K×8 SRAMs in real-time clock and configuration memory applications.
For engineers reviewing the M48Z35Y-70MH1F datasheet, M48Z35Y-70MH1F pinout, M48Z35Y-70MH1F application, or M48Z35Y-70MH1F equivalent, this page provides verified package mapping (SOH28), validated pin functions, confirmed battery switchover voltage (VSO = 3.0 V), exact power-fail window (VPFD min/max), and real-world timing behavior under VCC decay conditions.
Technical Context
The M48Z35Y integrates a 32 K × 8 SRAM array, voltage-sense comparator, battery switch, and write-protection logic on a single die. Its power-fail detection triggers chip deselect when VCC falls between VPFD(min) and VPFD(max), forcing all I/O into high-impedance and disabling writes before battery switchover at VSO = 3.0 V.
It supports standard asynchronous SRAM timing: tAVQV = 70 ns, tGLQV = 35 ns, and tWHAX = 0 ns, with dual control via E (chip enable) and W (write enable). The SOH28 package enables post-reflow SNAPHAT® battery mounting, isolating the 48 mAh lithium cell from solder thermal stress.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 256 Kbit (32 K × 8) - provides byte-wide non-volatile storage without EEPROM endurance limits |
| Access time | 70 ns - matches legacy 32K×8 SRAM timing for socket compatibility |
| VCC range | 4.5 to 5.5 V - supports industrial 5 V rails with ±10% tolerance |
| VPFD window | 4.2 V ≤ VPFD ≤ 4.5 V - defines precise voltage band where automatic write protection activates |
| VSO | 3.0 V - battery switchover threshold ensuring data retention before VCC collapse |
| Data retention | ≥11 years at 25 °C, VCC = 0 V - guaranteed minimum lifetime using internal 48 mAh lithium cell |
| Operating temp | 0 to 70 °C - qualified for commercial/industrial ambient environments |
Pinout & Package
Package: SOH28 - 28-pin plastic small-outline package with gold-plated contacts for direct mating with SNAPHAT® battery housing (M4Z28-BR00SH1). Designed for surface-mount assembly followed by top-mounted battery insertion post-reflow.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address inputs | 15-bit address bus selecting one of 32,768 bytes; compatible with JEDEC-standard 32K×8 SRAM addressing |
| DQ0–DQ7 | Data I/O | Bi-directional 8-bit data bus; three-state controlled by E and G; high-impedance during power-fail deselect |
| E | Chip enable | Active-low signal enabling memory access; forces high-Z outputs and disables writes when VPFD window is entered |
| G | Output enable | Active-low signal controlling output drivers; independent of write protection state |
| W | Write enable | Active-low signal initiating write cycles; disabled automatically during power-fail condition |
| VCC | Supply voltage | Primary 4.5–5.5 V power input; monitored continuously for VPFD detection and battery switchover |
| VSS | Ground | Reference node for all logic and analog circuitry; must be decoupled with 0.1 µF ceramic capacitor |
Key Features
| Feature | Design Value |
|---|---|
| Integrated CAPHAT™/SNAPHAT® battery solution | Eliminates external battery wiring and holder; SNAPHAT® mounts post-reflow to avoid thermal damage to 48 mAh lithium cell |
| Automatic power-fail write protection | Hardware-level VPFD detection (4.2–4.5 V) disables writes and sets outputs to high-Z before VCC drops to VSO = 3.0 V |
| JEDEC pin/function compatibility | Direct replacement for standard 32K×8 SRAMs (e.g., IS61LV256AL, CY62256); fits ROM/EPROM sockets without redesign |
| Zero-power data retention | Internal lithium cell sustains full SRAM content for ≥11 years at 25 °C with no external power |
| Robust VCC transient immunity | Specified immunity to negative spikes down to –0.3 V; Schottky diode (1N5817/MBRS120T3) recommended for VCC-to-VSS clamping |
Applications
| Real-Time Clock (RTC) Backup Memory | Industrial PLC Configuration Storage |
|---|---|
|
Use Scenario: Maintaining RTC registers and calendar data across AC power loss in embedded metering systems. IC Role / Device Role / Timing Role: Non-volatile SRAM providing immediate read/write access to timekeeping registers while preserving state during brownouts. Use Value: Eliminates need for external battery management circuitry; guarantees 11-year data retention without refresh or wear-out concerns. |
Use Scenario: Storing ladder logic parameters and calibration coefficients in programmable logic controllers during factory power interruptions. IC Role / Device Role / Timing Role: Pin-compatible SRAM replacing EPROM sockets to enable field-updatable configuration without UV erasure or programming delays. Use Value: Supports unlimited write cycles versus EEPROM endurance limits; retains settings through >100,000 power cycles. |
| Medical Device Event Logging | Point-of-Sale Terminal Transaction Buffer |
|
Use Scenario: Capturing critical diagnostic timestamps and sensor fault records in portable ultrasound units during battery swaps. IC Role / Device Role / Timing Role: Battery-backed memory capturing time-stamped events with sub-millisecond write latency and zero data corruption risk during VCC transition. Use Value: Meets IEC 62304 Class B software safety requirements via hardware-enforced write protection below VPFD threshold. |
Use Scenario: Holding last transaction ID and receipt buffer in retail terminals during grid instability or UPS switchover. IC Role / Device Role / Timing Role: High-speed SRAM acting as atomic commit buffer-ensuring transaction integrity even if main power fails mid-write. Use Value: 70 ns access time enables real-time logging; automatic write disable prevents partial record corruption during brownout. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Maxim MAX6900 | Serial I²C interface; 64 Kbit EEPROM-based; no integrated battery; requires external backup power | Limited to low-bandwidth configuration storage; not suitable for high-speed RTC register access | Select only when board space is constrained and 400 kHz I²C bandwidth suffices |
| ON Semiconductor CAT24C512 | I²C EEPROM; 512 Kbit; no power-fail logic; 1 million write cycles; no integrated battery | Requires external battery + supervisor IC for data retention; slower write times (~5 ms/page) | Choose only for cost-sensitive designs where infrequent writes and longer latency are acceptable |
Compared with MAX6900 and CAT24C512, M48Z35Y-70MH1F delivers parallel-byte access, hardware-triggered write protection, and fully integrated battery backup-enabling deterministic real-time operation without firmware intervention or external support components.
Availability
M48Z35Y-70MH1F is available at Aetrix Electronics and suitable for real-time clock backup, industrial PLC configuration storage, medical event logging, and point-of-sale transaction buffering requiring stable component supply across multi-year production cycles.
Supply support for M48Z35Y-70MH1F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power management ICs, sensors, and memory solutions for industrial, automotive, and consumer markets.
M48Z35Y belongs to ST's ZEROPOWER® SRAM product line, engineered specifically for applications demanding seamless, maintenance-free non-volatility in space-constrained, mission-critical systems where battery integration and power-fail resilience are mandatory.
FAQ
What is the battery chemistry and capacity used in M48Z35Y-70MH1F?
The M48Z35Y-70MH1F uses a non-rechargeable lithium carbon monofluoride (LiCFₓ) button cell with 48 mAh capacity, housed separately in the SNAPHAT® top (M4Z28-BR00SH1). This chemistry ensures stable voltage output and 11+ years of data retention at 25 °C with zero self-discharge-induced data loss.
Can M48Z35Y-70MH1F operate without the SNAPHAT® battery installed?
Yes - the SOH28 package functions as a standard 32K×8 SRAM when VCC is present and within specification (4.5–5.5 V). However, data retention during power loss is disabled without the SNAPHAT® battery; the device will lose all stored data once VCC drops below VSO = 3.0 V.
How does the VPFD window differ between M48Z35 and M48Z35Y variants?
M48Z35 specifies VPFD = 4.5–4.75 V (for 4.75–5.5 V VCC), while M48Z35Y specifies VPFD = 4.2–4.5 V (for 4.5–5.5 V VCC). This lower VPFD threshold allows earlier write protection activation in systems with looser 5 V rail regulation, improving robustness against marginal power supplies.
Is M48Z35Y-70MH1F RoHS compliant and lead-free?
Yes - M48Z35Y-70MH1F meets RoHS Directive 2011/65/EU and is manufactured with lead-free second-level interconnects. The SOH28 package uses Pb-free terminations compatible with standard reflow profiles (peak 260 °C, time above 255 °C ≤ 30 s).
M48Z35Y-70MH1F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- 28-SOP (0.350", 8.89mm Width) with SNAPHAT Sockets
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 28-SOH
M48Z35Y-70MH1F FAQ
1.How can I place an order for M48Z35Y-70MH1F through Aetrix?
Please submit a Request for Quotation (RFQ) for M48Z35Y-70MH1F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M48Z35Y-70MH1F reliable?
The price and inventory of M48Z35Y-70MH1F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M48Z35Y-70MH1F is usually 5 days.
3.What payment methods are accepted for M48Z35Y-70MH1F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M48Z35Y-70MH1F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M48Z35Y-70MH1F?
M48Z35Y-70MH1F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M48Z35Y-70MH1F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M48Z35Y-70MH1F?
For technical support, including M48Z35Y-70MH1F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M48Z35Y-70MH1F requirements.
6.How does Aetrix verify that M48Z35Y-70MH1F is sourced from the original manufacturer or authorized distributors?
All M48Z35Y-70MH1F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M48Z35Y-70MH1F meets industry standards.
7.What is the process for return or replacement of M48Z35Y-70MH1F?
All M48Z35Y-70MH1F units undergo pre-shipment inspection (PSI). If there is an issue with M48Z35Y-70MH1F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M48Z35Y-70MH1F part is unused and in its original packaging.
Return procedure for M48Z35Y-70MH1F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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