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STMicroelectronics M48Z512AV-85PM1
- Part No.:
- M48Z512AV-85PM1
- Manufacturer:
- STMicroelectronics
- Category:
- Memory
- Package:
- 32-DIP Module (0.600", 15.24mm)
- Datasheet:
-
M48Z512AV-85PM1.pdf
- Description:
- IC NVSRAM 4MBIT PARALLEL 32PMDIP
- Quantity:
- Payment:
- Shipping:
Inventory:3,512
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Product details
Overview
M48Z512AV-85PM1 from STMicroelectronics is a 4 Mbit (512 K × 8) non-volatile ZEROPOWER® SRAM with integrated lithium battery, power-fail detection, and automatic write protection. It operates at 3.0–3.6 V, features 85 ns access time, 10-year data retention in battery backup mode, and pin compatibility with JEDEC-standard 512 K × 8 SRAMs. It serves as a drop-in replacement for volatile SRAM in legacy industrial controllers requiring persistent memory during brownouts.
For engineers reviewing the M48Z512AV-85PM1 datasheet, M48Z512AV-85PM1 pinout, M48Z512AV-85PM1 application, or M48Z512AV-85PM1 equivalent, key selection criteria include its 2.8–3.0 V power-fail deselect threshold (VPFD), 2.5 V battery switchover voltage (VSO), CMOS standby current of 3 mA, and PMDIP32 through-hole package suitability for repairable or long-lifecycle embedded systems.
Technical Context
The M48Z512AV-85PM1 integrates a 524,288 × 8-bit CMOS SRAM array, lithium coin-cell battery, and analog voltage-sense circuitry in a single 32-pin DIP module. Its control logic continuously monitors VCC and triggers automatic chip deselect and write protection when voltage falls below VPFD (2.8–3.0 V), then switches to battery power at VSO = 2.5 V.
It supports standard asynchronous SRAM timing: READ mode requires E and G low with W high; WRITE mode requires active E and W; outputs enter high-impedance state during power fail or standby. The device guarantees tWP (write protect time) of 40–250 µs and tER (E recovery time) of 40–120 ms to ensure safe resumption of operation after power restoration.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 4,194,304 bits (524,288 words × 8 bits); enables byte-wide data storage without external multiplexing |
| Access time | 85 ns max; defines minimum cycle time for reliable read/write in 3.3 V systems with standard bus timing |
| VCC operating range | 3.0 V to 3.6 V; matches 3.3 V logic systems and avoids level-shifting requirements |
| VPFD range | 2.8 V to 3.0 V; sets precise power-fail detection window to prevent premature write protection during transient dips |
| VSO voltage | 2.5 V nominal; determines battery activation point to preserve data before VCC reaches critical undervoltage |
| Data retention | ≥10 years in battery backup mode (VCC = 0 V); eliminates need for external NVSRAM controllers or EEPROM wear leveling |
| Standby current (ICC2) | 3 mA max at CMOS-compatible E ≥ VCC – 0.2 V; reduces system power budget during idle periods |
Pinout & Package
PMDIP32 (32-pin plastic dual in-line package) with 0.3″ width, ECOPACK® RoHS-compliant construction and lead-free second-level interconnect.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address inputs | 19-bit address bus supporting full 524,288-word addressing; compatible with standard microcontroller address lines |
| DQ0–DQ7 | Data I/O | 8-bit bidirectional data bus with three-state outputs controlled by E and G; interfaces directly to 8-bit data buses |
| E | Chip enable input | Active-low global enable; initiates read/write cycles and controls output enable when G is inactive |
| G | Output enable input | Active-low output control; allows data bus sharing without contention when E is asserted |
| W | Write enable input | Active-low write strobe; defines write cycle boundaries together with E; must be held stable during address/data setup/hold windows |
| VCC | Supply voltage | 3.0–3.6 V main power rail; powers SRAM core and control logic; internal battery disconnects automatically when VCC is present |
| VSS | Ground | Reference return path for all signals and internal battery; requires low-impedance connection to minimize noise-induced corruption |
Key Features
| Feature | Design Value |
|---|---|
| Integrated lithium battery | Sealed, pre-charged coin cell enabling 10-year data retention without external power or battery management circuitry |
| Automatic power-fail detection | Voltage-sense circuitry triggers write protection within 40–250 µs when VCC drops below 2.8–3.0 V, preventing partial writes |
| Pin-compatible JEDEC replacement | Direct substitute for industry-standard 512 K × 8 SRAMs (e.g., AS6C4008, CY62157); no PCB redesign required |
| Two-stage power switchover | First disables writes at VPFD (2.8–3.0 V), then activates battery at VSO (2.5 V); ensures clean transition without data loss |
| CMOS standby current | 3 mA max at VCC = 3.3 V and E ≥ VCC – 0.2 V; supports low-power sleep modes in battery-backed systems |
Applications
| Industrial PLC Memory Backup | Medical Device Configuration Storage |
|---|---|
Use Scenario: Retaining ladder logic state and calibration parameters during AC mains failure in programmable logic controllers. IC Role / Device Role / Timing Role: Non-volatile SRAM providing immediate, seamless memory hold without software intervention or external NVRAM controller. Use Value: Eliminates risk of program corruption during brownouts; maintains operational continuity per IEC 61131-2 immunity requirements. |
Use Scenario: Storing patient-specific therapy settings and device configuration across power cycles in infusion pumps and diagnostic monitors. IC Role / Device Role / Timing Role: Self-contained memory subsystem ensuring FDA 21 CFR Part 11-compliant data persistence without firmware dependency. Use Value: Guarantees 10-year data integrity without periodic refresh or battery replacement-critical for Class II medical devices. |
| Telecom Base Station Clock Buffer | Avionics Data Logger Memory |
Use Scenario: Preserving real-time clock registers and synchronization status during brief power interruptions in cellular base station timing modules. IC Role / Device Role / Timing Role: Low-latency, battery-backed RAM interfacing directly with clock management ICs (e.g., DS3231) via parallel bus. Use Value: Maintains sub-millisecond time accuracy during grid fluctuations; avoids costly GPS reacquisition delays. |
Use Scenario: Capturing flight-critical sensor telemetry in black box recorders where power may be lost mid-flight due to electrical faults. IC Role / Device Role / Timing Role: Fail-safe memory buffer that retains last 30 seconds of data even if main bus voltage collapses to zero volts. Use Value: Meets DO-178C Level A data retention requirements with no external supervision or watchdog timer needed. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ST M48Z512AY-85PM1 | Higher VCC range (4.5–5.5 V) and VPFD (4.2–4.5 V); same 85 ns speed and PMDIP32 package | Designed for 5 V legacy systems; incompatible with 3.3 V rails without level translation | Select only if existing design uses 5 V supply and requires identical timing but higher VPFD margin |
| Maxim MAX6900A | Serial I²C interface (not parallel); 32 KB EEPROM + RTC; no integrated battery; 100 k write cycles | Requires firmware driver support; unsuitable for high-speed burst logging or direct CPU bus attachment | Choose for space-constrained designs needing RTC integration, not for SRAM replacement or high-throughput data capture |
Compared with M48Z512AV-85PM1, the M48Z512AY-85PM1 offers higher voltage tolerance but lacks 3.3 V compatibility, while the MAX6900A trades parallel bus performance and unlimited writes for serial interface simplicity and RTC functionality-neither provides the same plug-and-play, battery-integrated, zero-software-overhead solution.
Availability
M48Z512AV-85PM1 is available at Aetrix Electronics and suitable for industrial PLC memory backup, medical device configuration storage, telecom clock buffering, and avionics data logging requiring stable component supply across extended product lifecycles.
Supply support for M48Z512AV-85PM1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power management ICs with strong emphasis on reliability and longevity.
The M48Z512AV-85PM1 belongs to ST's ZEROPOWER® RAM product line, engineered specifically for legacy system upgrades and long-lifecycle applications where data persistence during power loss is mission-critical and board space is constrained.
FAQ
Is M48Z512AV-85PM1 recommended for new designs?
No. STMicroelectronics explicitly states this part is "not recommended for new design" as of June 2011. It remains in production for legacy support but lacks modern packaging, power efficiency, or extended temperature grades. New designs should evaluate alternatives like FRAM or nvSRAM with updated qualification and longer-term supply assurance.
What is the maximum allowable negative undershoot on VCC during battery backup mode?
Negative undershoot below –0.3 V on any pin-including VCC-is strictly prohibited during battery backup mode. Exceeding this risks permanent data corruption. ST recommends adding a Schottky diode (cathode to VCC, anode to VSS) and a 0.1 µF ceramic bypass capacitor to suppress transients caused by power cycling or switching noise.
How does the internal battery connect and disconnect during power transitions?
The internal lithium battery remains electrically isolated until VCC drops below the switchover voltage (VSO = 2.5 V), at which point analog switching circuitry connects it to maintain SRAM power. When VCC rises above VSO, the battery is automatically disconnected and external VCC resumes powering the device-no user intervention or external control signal is required.
Can M48Z512AV-85PM1 operate across the full industrial temperature range?
Yes. The "1" suffix in M48Z512AV-85PM1 denotes Grade 1 temperature rating (0 °C to +70 °C). For extended operation from –40 °C to +85 °C, the "6" suffix variant (e.g., M48Z512AV-85PM6) is specified-but both share identical electrical characteristics, VPFD, VSO, and timing parameters across their respective ranges.
M48Z512AV-85PM1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- 32-DIP Module (0.600", 15.24mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 512K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 85ns
- Access Time:
- 85 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 32-PMDIP Module
M48Z512AV-85PM1 FAQ
1.How can I place an order for M48Z512AV-85PM1 through Aetrix?
Please submit a Request for Quotation (RFQ) for M48Z512AV-85PM1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M48Z512AV-85PM1 reliable?
The price and inventory of M48Z512AV-85PM1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M48Z512AV-85PM1 is usually 5 days.
3.What payment methods are accepted for M48Z512AV-85PM1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M48Z512AV-85PM1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M48Z512AV-85PM1?
M48Z512AV-85PM1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M48Z512AV-85PM1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M48Z512AV-85PM1?
For technical support, including M48Z512AV-85PM1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M48Z512AV-85PM1 requirements.
6.How does Aetrix verify that M48Z512AV-85PM1 is sourced from the original manufacturer or authorized distributors?
All M48Z512AV-85PM1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M48Z512AV-85PM1 meets industry standards.
7.What is the process for return or replacement of M48Z512AV-85PM1?
All M48Z512AV-85PM1 units undergo pre-shipment inspection (PSI). If there is an issue with M48Z512AV-85PM1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M48Z512AV-85PM1 part is unused and in its original packaging.
Return procedure for M48Z512AV-85PM1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M48Z512AV-85PM1 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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