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STMicroelectronics M48Z58Y-70MH1E
- Part No.:
- M48Z58Y-70MH1E
- Manufacturer:
- STMicroelectronics
- Category:
- Memory
- Package:
- 28-SOP (0.350", 8.89mm Width) with SNAPHAT Sockets
- Datasheet:
-
M48Z58Y-70MH1E.pdf
- Description:
- IC NVSRAM 64KBIT PARALLEL 28SOH
- Quantity:
- Payment:
- Shipping:
Inventory:4,008
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Product details
Overview
M48Z58Y-70MH1E from STMicroelectronics is a 5 V, 64 kbit (8 k × 8) non-volatile zero-power SRAM with integrated lithium battery, power-fail detection circuitry, and automatic write protection. It delivers 70 ns read/write cycle time, operates across 4.5–5.5 V supply range, and retains data for ≥10 years on internal battery during power loss. Used in industrial control panels, medical device parameter storage, and utility meter firmware backup where persistent RAM without external battery management is required.
For engineers reviewing the M48Z58Y-70MH1E datasheet, M48Z58Y-70MH1E pinout, M48Z58Y-70MH1E application, or M48Z58Y-70MH1E equivalent, key selection considerations include VPFD window (4.2–4.5 V), SOH28 surface-mount package compatibility with SNAPHAT® top, battery-backed data retention without external circuitry, and JEDEC-standard 8 k × 8 SRAM pin/function equivalence.
Technical Context
The M48Z58Y integrates SRAM array, voltage-sense switching circuitry, and lithium cell control logic on a single die. Its power-fail detection triggers write protection when VCC falls within the 4.2–4.5 V VPFD window and switches to battery backup at ≤3.0 V (VSO), ensuring uninterrupted data retention.
It supports standard asynchronous SRAM timing: 70 ns cycle time, 70 ns address-to-output access, and 35 ns output-enable access. The SOH28 package enables post-reflow SNAPHAT® battery mounting via gold-plated top-contact sockets, eliminating thermal damage risk to the 48 mAh lithium cell during reflow soldering.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 64 kbit (8 k × 8 bytes); provides byte-wide non-volatile storage compatible with legacy SRAM sockets. |
| Access time | 70 ns read/write cycle; meets timing requirements of 80C51, Z80, and similar microcontrollers without wait states. |
| VCC operating range | 4.5–5.5 V; wider than standard 5 V SRAMs, enabling robust operation under brownout conditions. |
| VPFD window | 4.2–4.5 V; precise power-fail threshold ensures early write protection before data corruption occurs. |
| Data retention | ≥10 years on internal 48 mAh lithium cell; eliminates need for external battery holders or charge management. |
| Package | SOH28 (28-pin SOIC); surface-mount footprint with top-contact interface for SNAPHAT® battery housing. |
| Operating temperature | 0 to 70 °C; qualified for commercial/industrial ambient environments in metering and control systems. |
Pinout & Package
SOH28 (28-pin plastic small outline) package with gold-plated top-contact terminals for mating with SNAPHAT® battery housing (M4Z28-BR00SH1). Dimensions: 17.71 × 8.23 mm body, 1.27 mm lead pitch, 3.05 mm height.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A12 | Address inputs | 13-bit address bus supporting full 8 kbyte addressing; compatible with JEDEC-standard SRAM decoders. |
| DQ0–DQ7 | Data I/O | Bi-directional 8-bit data bus with three-state outputs controlled by E and G; matches standard SRAM data flow. |
| E | Chip enable | Active-low chip select; initiates read/write cycles and controls standby current (ICC2 = 3 mA). |
| G | Output enable | Active-low output control; enables high-impedance state during writes to prevent bus contention. |
| W | Write enable | Active-low write strobe; falling edge defines write start; tWLQZ = 25 ns transition to Hi-Z prevents glitches. |
| VCC | Power supply | 5 V nominal input; monitored continuously for VPFD detection and automatic switchover to battery at VSO ≤ 3.0 V. |
| VSS | Ground | Reference return path for all digital and analog circuitry; requires local 0.1 µF ceramic bypass per datasheet Figure 8. |
| NC | No connect | Pins 15 and 28 are internally unconnected; must remain floating or tied to VSS per layout guidelines. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated CAPHAT™/SNAPHAT® battery solution | Eliminates external battery holder, charge IC, and voltage monitoring circuitry-reduces BOM count by ≥4 components. |
| Automatic power-fail write protection | Hardware-enforced VPFD window (4.2–4.5 V) disables writes before VCC decay causes data corruption. |
| Post-reflow battery integration | SNAPHAT® top mounts after reflow; avoids lithium cell exposure to >255 °C peak temperatures during SMT assembly. |
| JEDEC pin/function compatibility | Direct drop-in replacement for standard 8 k × 8 SRAMs (e.g., IS61LV256AL, CY62256) without PCB redesign. |
| Zero-power retention mode | Draws only leakage current (<1 µA) during battery backup; extends 48 mAh cell life to ≥10 years at 25 °C. |
Applications
| Industrial Control Panel Memory | Smart Electricity Meter Firmware Backup |
|---|---|
|
Use Scenario: Storing calibration coefficients, event logs, and configuration settings in programmable logic controllers (PLCs) subject to frequent power cycling. IC Role / Device Role / Timing Role: Non-volatile SRAM providing instant-read/write access during runtime and guaranteed data retention during mains failure. Use Value: Eliminates EEPROM wear-out limitations and flash programming delays while maintaining full SRAM speed and unlimited write endurance. |
Use Scenario: Preserving tariff schedules, billing registers, and tamper-detection timestamps in ANSI C12.20-compliant utility meters. IC Role / Device Role / Timing Role: Battery-backed memory holding critical revenue-grade data during grid outages lasting hours or days. Use Value: Meets IEC 62053-21 requirement for 10-year data retention without external power or maintenance. |
| Medical Infusion Pump Parameter Storage | Point-of-Sale Terminal Transaction Log |
|
Use Scenario: Retaining drug library profiles, dose limits, and alarm history in Class IIa infusion pumps requiring FDA 21 CFR Part 11 compliance. IC Role / Device Role / Timing Role: Secure, write-protected memory that auto-locks during brownout to prevent corrupted therapy parameters. Use Value: VPFD-triggered hardware write disable satisfies IEC 62304 SW safety requirement for fail-safe memory behavior. |
Use Scenario: Caching last 500 transaction records in retail POS terminals deployed in regions with unstable AC power. IC Role / Device Role / Timing Role: High-speed buffer memory that preserves sales data during unexpected shutdowns before host upload. Use Value: 70 ns access time enables real-time logging without CPU wait states; battery backup prevents revenue loss from lost transactions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Maxim MAX6900 | Serial I²C interface; 32 kbit capacity; no integrated battery; requires external coin cell and charge control. | Lower pin count but slower (400 kHz I²C), unsuitable for high-speed parallel bus systems. | Select only if board space is constrained and system already uses I²C infrastructure. |
| ON Semiconductor CAT24C512 | I²C EEPROM; 512 kbit; 1 million write cycles; no battery; data retention 100 years at 25 °C. | Write latency ~5 ms per byte; incompatible with SRAM timing; not suitable for real-time register backup. | Choose only for infrequently updated configuration storage where write speed is irrelevant. |
Compared with MAX6900 and CAT24C512, the M48Z58Y-70MH1E uniquely delivers parallel SRAM speed, hardware write protection, and fully integrated battery backup-enabling true zero-power, drop-in replacement for legacy volatile memory designs without firmware or timing changes.
Availability
M48Z58Y-70MH1E is available at Aetrix Electronics and suitable for industrial control panel memory, smart electricity meter firmware backup, and medical infusion pump parameter storage requiring stable component supply across extended product lifecycles.
Supply support for M48Z58Y-70MH1E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader specializing in automotive, industrial, and power management solutions, with over 45 years of analog and mixed-signal design expertise.
The M48Z58Y belongs to ST's ZEROPOWER® SRAM product line, engineered specifically for applications demanding seamless, maintenance-free non-volatility in space-constrained, cost-sensitive embedded systems.
FAQ
What is the battery chemistry and expected service life of the M48Z58Y-70MH1E?
The M48Z58Y-70MH1E integrates a 48 mAh lithium carbon monofluoride (LiCFₓ) button cell. At 25 °C, it guarantees ≥10 years of data retention in battery backup mode. Service life scales inversely with ambient temperature and retention duty cycle; ST application note AN1012 provides derating curves for elevated temperatures.
Can the SNAPHAT® battery housing be installed manually after board assembly?
Yes-the SNAPHAT® top (e.g., M4Z28-BR00SH1) is designed for manual snap-on installation after reflow soldering. Its keyed mechanical design prevents reverse insertion, and gold-plated contacts ensure reliable electrical connection to the SOH28 package's top terminals without soldering.
Does the M48Z58Y-70MH1E require external decoupling capacitors?
Yes-a 0.1 µF ceramic capacitor must be placed between VCC and VSS as close as possible to the SOH28 package pins. This suppresses negative-going transients during power cycling, which could otherwise corrupt data in battery backup mode per Section 3.4 of the datasheet.
How does the VPFD window differ between M48Z58 and M48Z58Y variants?
The M48Z58Y has a lower VPFD window of 4.2–4.5 V versus 4.5–4.75 V for the M48Z58. This allows earlier write protection activation under marginal 5 V rail conditions, improving data integrity in systems with looser voltage regulation or longer power-down transients.
M48Z58Y-70MH1E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- 28-SOP (0.350", 8.89mm Width) with SNAPHAT Sockets
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 64Kbit
- Memory Organization:
- 8K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 28-SOH
M48Z58Y-70MH1E FAQ
1.How can I place an order for M48Z58Y-70MH1E through Aetrix?
Please submit a Request for Quotation (RFQ) for M48Z58Y-70MH1E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M48Z58Y-70MH1E reliable?
The price and inventory of M48Z58Y-70MH1E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M48Z58Y-70MH1E is usually 5 days.
3.What payment methods are accepted for M48Z58Y-70MH1E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M48Z58Y-70MH1E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M48Z58Y-70MH1E?
M48Z58Y-70MH1E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M48Z58Y-70MH1E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M48Z58Y-70MH1E?
For technical support, including M48Z58Y-70MH1E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M48Z58Y-70MH1E requirements.
6.How does Aetrix verify that M48Z58Y-70MH1E is sourced from the original manufacturer or authorized distributors?
All M48Z58Y-70MH1E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M48Z58Y-70MH1E meets industry standards.
7.What is the process for return or replacement of M48Z58Y-70MH1E?
All M48Z58Y-70MH1E units undergo pre-shipment inspection (PSI). If there is an issue with M48Z58Y-70MH1E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M48Z58Y-70MH1E part is unused and in its original packaging.
Return procedure for M48Z58Y-70MH1E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M48Z58Y-70MH1E Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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