STMicroelectronics M48Z58Y-70PC1

Overview

M48Z58Y-70PC1 from STMicroelectronics is a 64 kbit (8 k × 8) non-volatile zero-power SRAM with integrated lithium battery, power-fail detection circuitry, and automatic write protection. It operates at 4.5–5.5 V, features 70 ns read/write cycle time, VPFD of 4.2–4.5 V, and provides ≥10 years data retention in battery backup mode. Used in industrial control panels for real-time parameter storage during AC mains failure.

For engineers reviewing the M48Z58Y-70PC1 datasheet, M48Z58Y-70PC1 pinout, M48Z58Y-70PC1 application, or M48Z58Y-70PC1 equivalent, key selection considerations include VPFD voltage window compatibility, CAPHAT™ DIP package integration, battery-backed data retention duration, and JEDEC 8 k × 8 SRAM pin/function equivalence.

Technical Context

The device integrates SRAM array, voltage-sense switching circuitry, and lithium cell into a monolithic die. Its power-fail logic monitors VCC continuously and initiates chip deselect and write protection when voltage falls within the 4.2–4.5 V VPFD window, then switches to battery supply at VSO = 3.0 V.

It supports standard TTL/CMOS-compatible control timing: tAVQV = 70 ns, tGLQV = 35 ns, and tWLQZ = 25 ns. The CAPHAT™ DIP package embeds the battery internally, eliminating external battery connections and enabling drop-in replacement in legacy 28-pin sockets.

Key Specifications

Pinout & Package

Supplied in 28-pin PDIP CAPHAT™ package (28.7 mm × 18.1 mm × 9.3 mm), integrating SRAM die and lithium button cell in a single hermetically sealed unit. No external battery connection required.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar non-volatile SRAM applications.

Compared with M48Z58-70PC1, the M48Z58Y-70PC1 offers earlier power-fail detection (4.2 V vs. 4.5 V), enabling safer operation on less-regulated 5 V supplies; versus DS1248, it delivers true integration - eliminating external battery routing, holder components, and assembly steps.

Availability

M48Z58Y-70PC1 is available at Aetrix Electronics and suitable for industrial control panels, medical infusion devices, smart energy meters, and avionics data loggers requiring stable component supply across multi-year production cycles.

Supply support for M48Z58Y-70PC1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power ICs, sensors, and memory solutions for industrial, automotive, and consumer markets.

The M48Z58Y belongs to ST's ZEROPOWER® SRAM product line, engineered specifically for mission-critical, battery-backed data retention in infrastructure equipment where firmware resilience and long-term field reliability are non-negotiable.

FAQ

What is the expected battery lifetime in the M48Z58Y-70PC1 under continuous backup conditions?

The integrated lithium button cell provides ≥10 years of data retention when operating solely on battery power (VCC < VSO = 3.0 V), based on 48 mAh capacity and sub-1 µA retention current. This rating assumes storage at 25 °C and excludes self-discharge effects beyond datasheet specifications.

Can the M48Z58Y-70PC1 be used in place of a standard 28-pin 8 k × 8 SRAM without circuit modifications?

Yes - it is pin- and function-compatible with JEDEC-standard 8 k × 8 SRAMs, including identical address/data/control pinout, timing (70 ns), and TTL/CMOS logic levels. No changes to PCB layout, firmware timing, or power sequencing are required for drop-in replacement.

Does the CAPHAT™ DIP package require special handling during reflow soldering?

No - the CAPHAT™ DIP variant (M48Z58Y-70PC1) contains an encapsulated lithium cell rated for hand-soldering or socket insertion only. Wave soldering or IR reflow is prohibited; ST explicitly warns against exposing it to temperatures >100 °C to prevent battery damage or venting.

How does the VPFD window of 4.2–4.5 V improve system robustness compared to standard SRAMs?

This window enables deterministic write protection before VCC reaches levels that cause metastability or bus contention in surrounding logic. By asserting high-impedance outputs and disabling writes at 4.2 V - well above typical CMOS noise margins - it prevents partial writes and data corruption during brownout events.