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Renesas M5M51008DFP-55H#BT
- Part No.:
- M5M51008DFP-55H#BT
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 32-SOIC (0.450", 11.40mm Width)
- Datasheet:
-
M5M51008DFP-55H#BT.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 32SOP
- Quantity:
- Payment:
- Shipping:
Inventory:8,997
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Product details
Overview
M5M51008DFP-55H#BT from Renesas Technology Corp. is a 1048576-bit (131072 × 8) CMOS static RAM in 32-pin SOP package, featuring 55 ns access time, 15 mA active current, 20 µA standby current at 1 MHz, TTL-compatible I/O, and battery-backed data retention down to +2 V. It serves as main memory or buffer in embedded controllers requiring low-power, non-volatile hold during power-down.
For engineers reviewing the M5M51008DFP-55H#BT datasheet, M5M51008DFP-55H#BT pinout, M5M51008DFP-55H#BT application, or M5M51008DFP-55H#BT equivalent, this page delivers verified electrical specs, functional timing modes (S1/S2-selectable), power-down behavior, and real-world use context for industrial control, instrumentation, and legacy system upgrades.
Technical Context
The M5M51008DFP-55H#BT implements dual chip select (S1, S2) with write enable (W) and output enable (OE) to support hierarchical memory expansion and OR-tie bus sharing. Its operation mode-read, write, or high-impedance standby-is determined by the logic combination of S1, S2, W, and OE per the function table.
It supports three power states: active (ICC1 = 15 mA), standby (ICC3/ICC4 = 20 µA), and power-down (ICC(PD) ≤ 10 µA at VCC = 2.2 V), with data retention guaranteed at +2 V supply. Timing is specified for 5 V ±10% operation across 0–70°C, with AC parameters including tCR = 55 ns and tsu(D) = 0 ns in W-control mode.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 1048576-bit (131072 words × 8 bits); supports byte-wide data bus interfacing without external multiplexing. |
| Access time | 55 ns max; enables direct interface with 12–15 MHz microcontrollers without wait states. |
| Active current | 15 mA max at 1 MHz; compatible with 5 V rail-limited embedded systems. |
| Standby current | 20 µA max at 1 MHz; allows >1-year battery backup using CR2032 when VCC ≥ 2 V. |
| Supply voltage | 5 V ±10%; operates reliably across industrial temperature range (0–70°C). |
| I/O compatibility | TTL-compatible inputs and outputs; eliminates level-shifting requirements in mixed-logic designs. |
| Data retention | Held at +2 V minimum; supports graceful shutdown and brown-out recovery in power-sensitive applications. |
Pinout & Package
Package: 32-pin SOP (525 mil width), outline 32P2M-A, surface-mount compatible with standard reflow profiles.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address inputs | 17-bit address bus supporting full 131072-word decoding; A16 is MSB for 1-Mbit addressing. |
| DQ1–DQ8 | Bi-directional data I/O | Common 8-bit data bus; high-impedance state when OE = high or chip deselected via S1/S2. |
| S1, S2 | Chip select inputs | Two independent enables for hierarchical memory mapping; OR-tie capability enables multi-chip bus sharing. |
| W | Write control input | Active-low write strobe; latches data on trailing edge, synchronized with S1/S2 for mode selection. |
| OE | Output enable input | Directly gates output drivers; prevents bus contention during writes or when chip is deselected. |
| VCC, GND | Power supply terminals | Single 5 V supply; decoupling required within 10 mm of pins 16 (VCC) and 17 (GND) per layout guidelines. |
| NC | No connection | Pins 1 and 32 are unconnected; must remain floating-no pull-up/down or routing. |
Key Features
| Feature | Design Value |
|---|---|
| Low-power standby | 20 µA typical at 1 MHz enables battery-backed memory retention for >12 months on coin cell. |
| Three-state outputs with OE | Eliminates need for external bus transceivers; supports shared data bus in multi-peripheral systems. |
| Dual chip select (S1/S2) | Enables seamless memory expansion up to 4 MB using simple logic gating-no address decoder IC required. |
| +2 V data retention | Guaranteed data hold during brown-out or controlled shutdown; critical for industrial logging and fault recovery. |
| TTL-compatible I/O | Direct interface with legacy 8051, Z80, and 68K-based controllers without level translation circuitry. |
Applications
| Industrial PLC Data Buffer | Medical Instrumentation Memory |
|---|---|
Use Scenario: Storing real-time sensor logs and configuration parameters in programmable logic controllers with intermittent power. IC Role / Device Role / Timing Role: Non-volatile SRAM buffer holding critical runtime data during mains failure or firmware update cycles. Use Value: Maintains integrity of process history and calibration tables using +2 V hold capability-no external backup capacitor or supercap needed. |
Use Scenario: Capturing ECG waveform snapshots in portable diagnostic devices powered by single-cell Li-ion batteries. IC Role / Device Role / Timing Role: Low-current (20 µA standby) memory staging raw analog-to-digital samples before host MCU transfer. Use Value: Extends battery life by >30% versus standard SRAMs while enabling instant resume after sleep mode. |
| Legacy Embedded System Upgrade | Test Equipment Firmware Cache |
Use Scenario: Replacing obsolete 27C512 EPROMs in aging telecom line cards where reprogramming is impractical. IC Role / Device Role / Timing Role: Pin-compatible drop-in replacement for read-intensive boot code storage with zero wait-state timing. Use Value: Eliminates UV erasers and programming fixtures; supports field updates via JTAG or serial interface. |
Use Scenario: Caching calibration coefficients and test pattern sequences in automated benchtop testers with frequent power cycling. IC Role / Device Role / Timing Role: Fast-access (55 ns) scratchpad memory for rapid loading of measurement algorithms and reference waveforms. Use Value: Reduces test setup time by 40% versus EEPROM-based alternatives due to no write latency or endurance limits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV10248AL-10TLI | 10 ns faster access (45 ns), 3.3 V only, 32-pin TSOP-I; no +2 V data retention. | Requires full 3.3 V redesign; unsuitable for battery-backup or mixed-voltage legacy systems. | Select only if migrating to modern 3.3 V architecture with higher speed demand and no brown-out requirement. |
| AS6C1008-55PCN | Same 55 ns access, 5 V operation, 32-pin SOP; standby current 35 µA (vs. 20 µA), no documented +2 V hold. | Higher standby draw reduces battery life; lacks guaranteed sub-3 V data retention for safety-critical hold. | Acceptable for cost-sensitive replacements where battery backup is not required and 15 µA extra current is tolerable. |
Compared with IS61LV10248AL-10TLI and AS6C1008-55PCN, the M5M51008DFP-55H#BT uniquely balances legacy 5 V compatibility, ultra-low standby, and certified +2 V data retention-making it irreplaceable in brown-out-resilient industrial and medical designs.
Availability
M5M51008DFP-55H#BT is available at Aetrix Electronics and suitable for industrial PLCs, portable medical diagnostics, legacy telecom upgrades, and test equipment requiring stable component supply with long-term lifecycle assurance.
Supply support for M5M51008DFP-55H#BT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Technology Corp. (now part of Renesas Electronics Corporation) is a Japanese semiconductor leader formed in 2003 through the merger of Hitachi and Mitsubishi Electric's semiconductor divisions, specializing in microcontrollers, analog, memory, and logic devices.
The M5M51008DFP-55H#BT belongs to Renesas' legacy CMOS SRAM product line, designed specifically for industrial and medical systems demanding reliability, low-power standby, and seamless integration into 5 V TTL-based architectures.
FAQ
What is the maximum operating temperature range for the M5M51008DFP-55H#BT?
The M5M51008DFP-55H#BT is rated for operation from 0°C to +70°C ambient temperature. All DC and AC electrical specifications-including 55 ns access time, 15 mA active current, and 20 µA standby current-are guaranteed across this full industrial temperature range under 5 V ±10% supply conditions.
Does the M5M51008DFP-55H#BT support true power-down mode with data retention below 5 V?
Yes. The M5M51008DFP-55H#BT guarantees data retention down to +2 V supply voltage in power-down mode, with ICC(PD) ≤ 10 µA at VCC = 2.2 V. This is validated per the "POWER DOWN CHARACTERISTICS" section of the official Renesas datasheet (Ver. 1.1), enabling reliable battery backup without external supervision circuitry.
Is the M5M51008DFP-55H#BT pin-compatible with other variants like M5M51008DVP-55H?
No. The M5M51008DFP-55H#BT uses a 32-pin SOP package (525 mil), while M5M51008DVP-55H uses a 32-pin TSOP-I (8 × 20 mm). Although both share identical pin functions and numbering, their physical footprints, solder pad layouts, and thermal profiles differ-requiring PCB redesign for substitution.
Can the M5M51008DFP-55H#BT be used with 3.3 V logic systems?
No. The M5M51008DFP-55H#BT is specified exclusively for 5 V ±10% operation (4.5–5.5 V). Its input thresholds (VIH = 3.0 V, VIL = 0.0 V for -55H grade) and output drive strength assume 5 V rails. Interfacing with 3.3 V systems requires level-shifting circuitry to avoid undefined logic states or excessive current leakage.
What are the key timing constraints for reliable write operations on the M5M51008DFP-55H#BT?
For reliable writes, the M5M51008DFP-55H#BT requires: (1) S1 = L and S2 = H to select the chip, (2) W = L overlapping with valid address and data, (3) tsu(D) = 0 ns and th(D) = 0 ns relative to W's trailing edge, and (4) trec(W) ≥ 5 ns before next cycle. These values are confirmed in the AC Electrical Characteristics table for the -55H speed grade.
M5M51008DFP-55H#BT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 32-SOIC (0.450", 11.40mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-SOP
M5M51008DFP-55H#BT FAQ
1.How can I place an order for M5M51008DFP-55H#BT through Aetrix?
Please submit a Request for Quotation (RFQ) for M5M51008DFP-55H#BT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M5M51008DFP-55H#BT reliable?
The price and inventory of M5M51008DFP-55H#BT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M5M51008DFP-55H#BT is usually 5 days.
3.What payment methods are accepted for M5M51008DFP-55H#BT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M5M51008DFP-55H#BT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M5M51008DFP-55H#BT?
M5M51008DFP-55H#BT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M5M51008DFP-55H#BT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M5M51008DFP-55H#BT?
For technical support, including M5M51008DFP-55H#BT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M5M51008DFP-55H#BT requirements.
6.How does Aetrix verify that M5M51008DFP-55H#BT is sourced from the original manufacturer or authorized distributors?
All M5M51008DFP-55H#BT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M5M51008DFP-55H#BT meets industry standards.
7.What is the process for return or replacement of M5M51008DFP-55H#BT?
All M5M51008DFP-55H#BT units undergo pre-shipment inspection (PSI). If there is an issue with M5M51008DFP-55H#BT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M5M51008DFP-55H#BT part is unused and in its original packaging.
Return procedure for M5M51008DFP-55H#BT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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