Renesas M5M51008DKV-55H#BT

Overview

M5M51008DKV-55H#BT from Renesas Technology Corp. is a 1048576-bit (131072 × 8) CMOS static RAM in a 32-pin 8 mm × 13.4 mm TSOP-I package, featuring 55 ns access time, 15 mA active current, and 20 µA standby current at 1 MHz. It supports TTL-compatible I/O, three-state outputs with OR-tie capability, and data retention down to +2 V for battery-backup systems in industrial control and embedded instrumentation.

For engineers reviewing the M5M51008DKV-55H#BT datasheet, M5M51008DKV-55H#BT pinout, M5M51008DKV-55H#BT application, or M5M51008DKV-55H#BT equivalent, key selection criteria include its dual chip-select architecture (S1/S2), write-control mode flexibility, low-voltage data hold, and TSOP-I footprint compatibility with space-constrained PCB layouts.

Technical Context

This SRAM implements a 21-bit address bus (A0–A16) with 8-bit bidirectional data I/O (DQ1–DQ8), controlled by independent chip-select inputs S1 and S2, write-enable W, and output-enable OE. Its dual-select logic enables hierarchical memory expansion without external gating logic.

The device uses quadruple-polysilicon/double-metal CMOS process with TFT load cells, achieving high density and low power. Power-down operation is triggered when S1 is high or S2 is low, reducing ICC to ≤20 µA while retaining data at VCC ≥ 2.0 V - verified per DC electrical specs and power-down timing requirements.

Key Specifications

Pinout & Package

Package: 32-pin TSOP-I (8 mm × 13.4 mm), Outline 32P3K-B, surface-mount, lead-free compatible (per #BT suffix).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with IS61LV10248AL-10TLI and AS6C1008-55PCN, the M5M51008DKV-55H#BT uniquely combines 5 V operation, dual-select expandability, +2 V data retention, and compact TSOP-I packaging - making it the only option supporting battery-backed hierarchical memory in legacy industrial form factors.

Availability

M5M51008DKV-55H#BT is available at Aetrix Electronics and suitable for industrial PLCs, portable medical diagnostics, and legacy embedded instrumentation requiring stable component supply, long-lifecycle support, and guaranteed traceability.

Supply support for M5M51008DKV-55H#BT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Technology Corp. was formed in 2003 through the merger of Hitachi and Mitsubishi Electric's semiconductor operations, focusing on microcontrollers, analog, logic, and memory solutions for industrial and automotive markets.

The M5M51008DKV-55H#BT belongs to Renesas' legacy CMOS SRAM product line, designed specifically for reliability-critical, battery-backed memory applications in industrial control, medical instrumentation, and telecom infrastructure where long-term availability and proven qualification matter more than cutting-edge speed.

FAQ

What is the maximum operating temperature range for the M5M51008DKV-55H#BT?

The M5M51008DKV-55H#BT is specified for operation from 0°C to +70°C ambient temperature, as confirmed in its DC and AC electrical characteristics tables. This range aligns with commercial-grade industrial applications and excludes extended temperature variants like –40°C to +85°C. The M5M51008DKV-55H#BT maintains full 55 ns access time and 20 µA standby current compliance across this entire range.

Does the M5M51008DKV-55H#BT support true dual-port operation?

No, the M5M51008DKV-55H#BT is a single-port static RAM with one shared address/data/control bus. It does not support simultaneous read and write operations on separate ports. Its architecture uses common DQ1–DQ8 lines for both input and output, controlled by W and OE signals - consistent with standard asynchronous SRAM behavior documented in the function table and timing diagrams.

Can the M5M51008DKV-55H#BT be used with a 3.3 V supply?

No, the M5M51008DKV-55H#BT is rated exclusively for 5.0 V ±10% (4.5–5.5 V) operation. Its DC specifications - including VIH = 2.4 V min, VOL = 0.4 V max, and ICC1 = 15 mA - are defined only at VCC = 5 V. Applying 3.3 V violates absolute maximum ratings and will result in undefined logic levels, failed data retention, and potential bus contention.

What is the purpose of the NC pins (pins 31 and 32) on the M5M51008DKV-55H#BT?

Pins 31 and 32 on the M5M51008DKV-55H#BT are designated No-Connection (NC) and must remain unconnected in circuit layout. These pins have no internal bonding or electrical function, as explicitly stated in the pin configuration diagram and "NC: NO CONNECTION" note. Connecting them risks signal coupling, ground loop formation, or mechanical stress on the TSOP-I package during reflow.

How does the M5M51008DKV-55H#BT handle power-down sequencing during main supply loss?

The M5M51008DKV-55H#BT enters low-power retention mode when either S1 is driven high or S2 is driven low, reducing ICC to ≤20 µA. During main supply collapse, holding VCC ≥ +2.0 V while asserting S1 = VIH (≥2.4 V) or S2 = VIL (≤0.8 V) preserves stored data indefinitely - verified in the Power Down Characteristics section and supported by t_su(PD) = 0 ns and t_rec(PD) = 5 ms timing specs.