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Renesas M5M51008DKV-55H#ST
- Part No.:
- M5M51008DKV-55H#ST
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- -
- Datasheet:
-
M5M51008DKV-55H#ST.pdf
- Description:
- STANDARD SRAM, 128KX8
- Quantity:
- Payment:
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Inventory:5,000
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Product details
Overview
M5M51008DKV-55H#ST from Renesas Technology Corp. is a 131,072-word × 8-bit (1 Mbit) CMOS static RAM in a 32-pin 8 mm × 13.4 mm TSOP-I package, featuring 55 ns access time, 15 mA active current, and 20 µA standby current at 1 MHz - optimized for battery-backed memory units in industrial control and embedded instrumentation.
For engineers reviewing the M5M51008DKV-55H#ST datasheet, M5M51008DKV-55H#ST pinout, M5M51008DKV-55H#ST application, or M5M51008DKV-55H#ST equivalent, key selection criteria include TTL-compatible I/O, dual chip select (S1/S2) for memory expansion, three-state outputs with OR-tie capability, +2 V data retention during power-down, and low-voltage power-down operation down to 2.0 V.
Technical Context
This SRAM implements a 512-row × 128-column × 16-block memory array using quadruple-polysilicon/double-metal CMOS technology with TFT load cells. It supports three distinct operational modes - read, write (W-controlled, S1-controlled, or S2-controlled), and non-selection - governed by the logic states of S1, S2, W, and OE.
Power management is enabled via two independent chip select inputs: S1 and S2 allow hierarchical memory banking and selective power-down, while the device maintains data integrity at VCC ≥ 2.0 V and draws only 20 µA standby current under 1 MHz conditions with S1 or S2 inactive.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 1048576-bit (131072 × 8) - supports byte-wide data bus interfacing without external demultiplexing |
| Access time | 55 ns max - enables direct interface with 16–20 MHz microcontrollers without wait states |
| Supply voltage | 5.0 V ±10% - compatible with standard TTL/CMOS logic rails and legacy 5 V systems |
| Standby current | 20 µA at 1 MHz - allows >1-year battery backup with typical coin-cell sources (e.g., CR2032) |
| Data retention | Held at +2.0 V minimum - supports graceful shutdown and brown-out recovery in power-sensitive applications |
| I/O compatibility | Direct TTL-compatible inputs/outputs - eliminates level-shifter requirements in mixed-logic designs |
| Chip select architecture | Dual active-low S1/S2 with OR-tie capability - enables scalable memory expansion up to 16 banks without address decoding logic |
Pinout & Package
Package: 32-pin TSOP-I (8 mm × 13.4 mm, Outline 32P3K-B), surface-mount, lead-free compatible (per #ST suffix).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address inputs | 17-bit address bus supporting full 131072-word addressing; A16 is MSB |
| DQ1–DQ8 | Bi-directional data I/O | 8-bit common data bus with three-state output drivers controlled by OE and chip select state |
| S1, S2 | Chip select inputs | Active-low dual chip selects enabling banked memory mapping and independent power-down per bank |
| W | Write enable | Active-low write control; latches data on trailing edge of W, S1, or S2 (whichever occurs first) |
| OE | Output enable | Active-low control of output drivers; prevents bus contention during writes or when deselected |
| VCC, GND | Power supply | Single 5 V supply with dedicated ground; decoupling required within 10 mm of pins 16 and 32 |
| NC | No connection | Pin 1 is NC - must remain unconnected; no internal circuitry or test function |
Key Features
| Feature | Design Value |
|---|---|
| Dual chip select (S1/S2) architecture | Enables hierarchical memory expansion and selective power gating per bank without external logic |
| +2.0 V data retention | Guarantees nonvolatile data hold during brown-out or battery switchover without external capacitor or backup circuitry |
| TTL-compatible I/O | Eliminates need for level translators when interfacing with legacy 5 V microcontrollers and peripheral ICs |
| Three-state outputs with OR-tie | Allows direct wire-OR connection of multiple devices on shared data bus without external buffers |
| Low 20 µA standby current | Extends battery life in portable instrumentation and remote sensor nodes operating in sleep mode |
Applications
| Industrial PLC Memory Buffer | Medical Device Data Logger |
|---|---|
Use Scenario: Real-time I/O status buffering and program instruction storage in programmable logic controllers with cyclic scan execution. IC Role / Device Role / Timing Role: Byte-wide static RAM serving as fast-access scratchpad and firmware cache between CPU and field I/O modules. Use Value: 55 ns access time ensures zero-wait-state operation with 16-bit MCUs; dual S1/S2 enables modular memory expansion across I/O racks. | Use Scenario: Continuous acquisition and timestamped storage of vital sign waveforms (ECG, SpO₂) in portable diagnostic equipment. IC Role / Device Role / Timing Role: Primary data buffer holding pre-processed samples prior to USB/Bluetooth transmission or SD card write. Use Value: +2 V data retention preserves critical waveform segments during battery replacement or AC power loss; 20 µA standby extends runtime between charges. |
| Avionics Control Panel Display Cache | Test & Measurement Equipment FIFO |
Use Scenario: Storing GUI bitmaps and configuration tables in ruggedized cockpit display units subject to thermal cycling and vibration. IC Role / Device Role / Timing Role: Nonvolatile display memory holding boot-up screens and menu structures accessible immediately after power-on reset. Use Value: TSOP-I package (8 × 13.4 mm) meets space constraints in sealed front-panel enclosures; TTL compatibility avoids signal integrity issues over long flex-cable runs. | Use Scenario: High-speed acquisition buffer in digital oscilloscopes and logic analyzers capturing transient events at multi-MHz sampling rates. IC Role / Device Role / Timing Role: First-stage circular buffer staging raw ADC samples before compression or transfer to host PC. Use Value: Three-state outputs with OR-tie support parallel connection of multiple M5M51008DKV-55H#ST devices for deeper FIFO depth without bus arbitration logic. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV10248AL-10TLI | 10 ns faster access (45 ns), 3.3 V only, same 1 Mbit × 8 organization and 32-pin TSOP-I | Requires 3.3 V system rail; not drop-in for 5 V designs without level translation | Select when migrating to lower-voltage platforms and higher-speed timing margins are needed |
| AS6C1008-55PCN | Same 5 V operation and 55 ns access, but uses 28-pin SOJ package (not pin-compatible) | Requires PCB redesign due to different footprint and pinout; no S2 input (single CS only) | Choose only if TSOP-I footprint is unavailable and board layout flexibility permits SOJ integration |
Compared with IS61LV10248AL-10TLI and AS6C1008-55PCN, the M5M51008DKV-55H#ST uniquely supports dual chip select for banked memory expansion and retains data at +2 V - features absent in both alternatives and critical for battery-backed industrial and medical applications.
Availability
M5M51008DKV-55H#ST is available at Aetrix Electronics and suitable for industrial PLC memory buffers, portable medical data loggers, avionics display caches, and test equipment FIFOs requiring stable component supply across extended production lifecycles.
Supply support for M5M51008DKV-55H#ST includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Technology Corp. (now part of Renesas Electronics Corporation) is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The M5M51008DKV-55H#ST belongs to Renesas' legacy CMOS SRAM product line, designed specifically for high-reliability, low-power, battery-backed memory applications in industrial control and instrumentation where data integrity during power interruption is essential.
FAQ
What is the maximum operating temperature range for the M5M51008DKV-55H#ST?
The M5M51008DKV-55H#ST is specified for operation from 0 °C to +70 °C ambient temperature. Its DC and AC electrical characteristics - including 55 ns access time, 15 mA active current, and 20 µA standby current - are guaranteed across this full industrial temperature range. The device also supports storage temperatures from –65 °C to +150 °C, making it suitable for reflow soldering and harsh-environment deployments.
Does the M5M51008DKV-55H#ST support true 5 V TTL-level signaling on all inputs and outputs?
Yes, the M5M51008DKV-55H#ST features fully TTL-compatible inputs and outputs. Input thresholds are VIH = 2.4 V min and VIL = 0.6 V max at VCC = 5 V, and output drive levels meet VOH = 2.4 V min (IOH = –1.0 mA) and VOL = 0.4 V max (IOL = 2.0 mA). This eliminates the need for external level shifters when interfacing with legacy 5 V microcontrollers, CPLDs, or peripheral ICs.
How does the dual chip select (S1/S2) functionality work in the M5M51008DKV-55H#ST?
The M5M51008DKV-55H#ST uses S1 and S2 as independent active-low chip select inputs. The device activates only when S1 = L and S2 = H. If either S1 = H or S2 = L, the device enters non-selection mode: outputs go high-impedance, and supply current drops to 20 µA standby. This enables hierarchical memory banking - e.g., one bank active while others sleep - and OR-tie expansion without bus contention.
Can the M5M51008DKV-55H#ST retain data when powered at 2.0 V?
Yes, the M5M51008DKV-55H#ST guarantees data retention down to VCC = 2.0 V, provided S1 or S2 is held inactive (S1 = H or S2 = L) to enter standby mode. At 2.0 V, ICC(PD) is ≤10 µA (typical), allowing years of retention on a single CR2032 coin cell. This feature is explicitly validated in the Power Down Characteristics section of the datasheet and is critical for battery-backed applications like medical loggers and industrial controllers.
What is the pin 1 marking and orientation for the M5M51008DKV-55H#ST TSOP-I package?
The M5M51008DKV-55H#ST uses a 32-pin TSOP-I package (Outline 32P3K-B) with pin 1 located at the top-left corner when the notch or mark is oriented upward. Pin 1 is NC (no connection) and must remain unconnected. The package measures 8 mm × 13.4 mm with 0.5 mm pitch; pin numbering proceeds counterclockwise: pins 1–16 along the top edge, pins 17–32 along the bottom edge.
M5M51008DKV-55H#ST Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- -
- Memory Format:
- -
- Technology:
- -
- Memory Size:
- -
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
M5M51008DKV-55H#ST FAQ
1.How can I place an order for M5M51008DKV-55H#ST through Aetrix?
Please submit a Request for Quotation (RFQ) for M5M51008DKV-55H#ST on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M5M51008DKV-55H#ST reliable?
The price and inventory of M5M51008DKV-55H#ST are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M5M51008DKV-55H#ST is usually 5 days.
3.What payment methods are accepted for M5M51008DKV-55H#ST?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M5M51008DKV-55H#ST transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M5M51008DKV-55H#ST?
M5M51008DKV-55H#ST orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M5M51008DKV-55H#ST order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M5M51008DKV-55H#ST?
For technical support, including M5M51008DKV-55H#ST datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M5M51008DKV-55H#ST requirements.
6.How does Aetrix verify that M5M51008DKV-55H#ST is sourced from the original manufacturer or authorized distributors?
All M5M51008DKV-55H#ST products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M5M51008DKV-55H#ST meets industry standards.
7.What is the process for return or replacement of M5M51008DKV-55H#ST?
All M5M51008DKV-55H#ST units undergo pre-shipment inspection (PSI). If there is an issue with M5M51008DKV-55H#ST, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M5M51008DKV-55H#ST part is unused and in its original packaging.
Return procedure for M5M51008DKV-55H#ST:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M5M51008DKV-55H#ST Tags
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