Renesas M5M51008DKV-70H#BT

Overview

M5M51008DKV-70H#BT from Renesas Technology Corp. is a 1048576-bit (131072 × 8) CMOS static RAM in a 32-pin 8 mm × 13.4 mm TSOP-I package, featuring 70 ns access time, 15 mA active current, 20 µA standby current at 1 MHz, and +2 V data retention for battery-backup operation. It serves as low-power main memory or buffer in embedded controllers and industrial instrumentation.

For engineers reviewing the M5M51008DKV-70H#BT datasheet, M5M51008DKV-70H#BT pinout, M5M51008DKV-70H#BT application, or M5M51008DKV-70H#BT equivalent, key selection criteria include TTL-compatible I/O, dual chip select (S1/S2) for memory expansion, three-state outputs with OR-tie capability, and verified 2 V data hold under power-down conditions.

Technical Context

This SRAM implements a 131072-word × 8-bit organization using quadruple-polysilicon/double-metal CMOS process with TFT load cells, enabling high density and low leakage. Its dual chip select architecture (S1 active-low, S2 active-high) supports hierarchical memory mapping and seamless bank switching without external logic.

Operation is controlled by W (write), OE (output enable), and two independent chip selects-S1 and S2-with mode decoding per the function table. Power-down is achieved by asserting S1 high or S2 low, reducing ICC to ≤20 µA while retaining data down to +2 V on VCC.

Key Specifications

Pinout & Package

Package: 32-pin TSOP-I (8 mm × 13.4 mm), RoHS-compliant surface-mount device with gull-wing leads, outline 32P3K-B.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with IS61LV10248AL-70TQLI and AS6C1008-70SCN, the M5M51008DKV-70H#BT uniquely delivers verified +2 V data retention and native 5 V TTL compatibility in a 32-pin TSOP-I footprint-making it irreplaceable in legacy industrial and medical systems requiring zero-battery-loss memory persistence.

Availability

M5M51008DKV-70H#BT is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical device parameter storage, and automotive body control modules requiring stable component supply across extended product lifecycles.

Supply support for M5M51008DKV-70H#BT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Technology Corp. is a Japanese semiconductor manufacturer formed in 2003 through the merger of Hitachi and Mitsubishi Electric's semiconductor operations, specializing in microcontrollers, analog, power, and memory solutions.

The M5M51008DKV-70H#BT belongs to Renesas' legacy CMOS SRAM product line, designed specifically for cost-sensitive, high-reliability embedded systems needing TTL-compatible, low-power, battery-backed memory with long-term obsolescence support.

FAQ

What is the minimum VCC voltage that guarantees data retention for M5M51008DKV-70H#BT?

The M5M51008DKV-70H#BT maintains stored data down to +2.0 V on VCC, as confirmed in the Power Down Characteristics section of its datasheet. This allows direct coin-cell backup without additional voltage regulation or hold circuitry. Operation below +2.0 V risks data loss, and the device is not characterized for retention at lower voltages. The M5M51008DKV-70H#BT achieves this via optimized TFT load cell design and low-leakage CMOS process.

Does M5M51008DKV-70H#BT support true 5 V TTL input thresholds?

Yes, the M5M51008DKV-70H#BT specifies VIH = 2.4 V min and VIL = 0.8 V max at VCC = 5 V ±10 %, meeting standard TTL input voltage requirements. Its outputs drive IOH = –1.0 mA at VOH ≥ 2.4 V and IOL = 2 mA at VOL ≤ 0.4 V, ensuring direct interfacing with 74LS and 74HC families without level shifters. This is explicitly validated in the DC Electrical Characteristics table for the -70H speed grade.

How does the dual chip select (S1/S2) architecture of M5M51008DKV-70H#BT simplify memory expansion?

The M5M51008DKV-70H#BT uses S1 (active-low) and S2 (active-high) to define four distinct chip enable states, enabling straightforward 2:4 decoding for up to four memory banks using only one 74HC139 or discrete NAND/NOR gates. Unlike single-CS SRAMs, this eliminates address-line gating complexity and reduces PCB routing congestion. The M5M51008DKV-70H#BT function table confirms non-selection occurs when S1=H or S2=L, allowing clean bus isolation during expansion.

Can M5M51008DKV-70H#BT be used in a 3.3 V system?

No, the M5M51008DKV-70H#BT is specified only for VCC = 5 V ±10 % (4.5 V to 5.5 V) per Absolute Maximum Ratings and DC Electrical Characteristics. Operating at 3.3 V violates its supply voltage specification, risks unreliable read/write behavior, and voids data retention guarantees. For 3.3 V systems, consider alternatives like IS61LV10248AL-70TQLI-but note it lacks +2 V hold and requires level translation for 5 V peripherals. The M5M51008DKV-70H#BT is not 3.3 V compatible.

What is the pin-compatible replacement for M5M51008DKV-70H#BT in the same TSOP-I package?

There is no documented pin-compatible replacement for M5M51008DKV-70H#BT. While AS6C1008-70SCN shares the 131072 × 8 organization and 70 ns speed, it uses a 28-pin SOJ package-not TSOP-I-and has different pin assignments (e.g., no NC pins, merged address lines). The M5M51008DKV-70H#BT's 32-pin TSOP-I outline 32P3K-B is unique to this family; migration requires PCB redesign. Renesas does not list any drop-in successor.