Renesas M5M51008DKV-70HIBT

Overview

M5M51008DKV-70HIBT from Renesas Technology Corp. is a 1048576-bit (131072 × 8) CMOS static RAM in a 32-pin 8 mm × 13.4 mm TSOP-I package, featuring 70 ns access time, 15 mA active current, 20 µA standby current at 1 MHz, TTL-compatible I/O, and battery-backed data retention down to +2 V - used in embedded memory expansion and low-power backup systems.

For engineers reviewing the M5M51008DKV-70HIBT datasheet, M5M51008DKV-70HIBT pinout, M5M51008DKV-70HIBT application, or M5M51008DKV-70HIBT equivalent, key selection criteria include dual chip select (S1/S2) for memory banking, three-state outputs with OR-tie capability, write control via W input, and verified 2 V data hold during power-down - all critical for industrial controller and legacy system memory upgrades.

Technical Context

This SRAM implements a 131072-word × 8-bit organization using quadruple-polysilicon/double-metal CMOS process with TFT load cells, enabling high density and low leakage. Its dual chip select architecture (S1 active-low, S2 active-high) supports hierarchical memory mapping and seamless expansion without external logic.

Operation is controlled by synchronous timing of W (write), OE (output enable), and S1/S2 enables: read occurs when W=H, OE=L, S1=L, S2=H; write requires W=L overlapping S1=L and S2=H; non-selection (high-Z output, minimal ICC) activates when S1=H or S2=L - enabling OR-tie bus sharing and power-down modes.

Key Specifications

Pinout & Package

Package: 32-pin TSOP-I (8 mm × 13.4 mm), RoHS-compliant, surface-mount, JEDEC MO-153 compliant outline 32P3K-B.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with IS61LV10248AL-70TLI and AS6C1008-70PCN, the M5M51008DKV-70HIBT uniquely supports 5 V operation, +2 V data retention, and TSOP-I footprint - making it the sole viable option for retrofitting legacy 5 V industrial controllers requiring guaranteed brown-out resilience.

Availability

M5M51008DKV-70HIBT is available at Aetrix Electronics and suitable for industrial PLC memory expansion, medical device data buffering, and legacy embedded system upgrades requiring stable component supply across extended product lifecycles.

Supply support for M5M51008DKV-70HIBT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Technology Corp. (now part of Renesas Electronics Corporation) is a Japanese semiconductor manufacturer formed in 2003 through the merger of Hitachi and Mitsubishi Electric's semiconductor operations, specializing in microcontrollers, analog, power, and memory solutions.

The M5M51008DKV-70HIBT belongs to Renesas' legacy CMOS SRAM product line, designed specifically for industrial and medical applications demanding long-term availability, battery-backed reliability, and pin-compatible obsolescence mitigation.

FAQ

What is the maximum operating temperature range for the M5M51008DKV-70HIBT?

The M5M51008DKV-70HIBT is specified for operation from 0 °C to +70 °C ambient temperature, as confirmed in its DC and AC electrical characteristics tables. This commercial-grade rating aligns with typical requirements for industrial control panels and point-of-sale terminals where internal board temperatures remain within this envelope. The device maintains full 70 ns access time and 20 µA standby current performance across this range.

Does the M5M51008DKV-70HIBT support true 5 V TTL interfacing without level shifters?

Yes, the M5M51008DKV-70HIBT features fully TTL-compatible inputs and outputs: VIH = 2.4 V min, VIL = 0.8 V max, VOH = 2.4 V min (IOH = –1.0 mA), VOL = 0.4 V max (IOL = 2 mA). These values match standard 74LS logic thresholds, allowing direct connection to 8086, Z80, and 68000 family microprocessors without external level translation circuitry.

Can the M5M51008DKV-70HIBT retain data at voltages below 5 V?

Yes, the M5M51008DKV-70HIBT guarantees data retention down to +2.0 V V_CC, as explicitly stated in its Power Down Characteristics section. This capability is validated across temperature and has been used in battery-backed applications such as industrial controllers and medical devices where uninterrupted data preservation during brown-out events is essential.

What is the function of the S1 and S2 pins on the M5M51008DKV-70HIBT?

S1 and S2 are complementary chip select inputs that together determine device selection state: the M5M51008DKV-70HIBT activates only when S1 = L and S2 = H. If S1 = H or S2 = L, the device enters high-impedance standby mode with ICC ≤ 20 µA. This dual-signal architecture enables hierarchical memory decoding and OR-tie bus sharing without external gating logic.

Is the M5M51008DKV-70HIBT pin-compatible with the M5M51008DVP-70H?

Yes, the M5M51008DKV-70HIBT shares identical pinout, electrical specifications, and timing parameters with the M5M51008DVP-70H, differing only in package outline: both use 32-pin TSOP-I but with distinct lead bend profiles (KV = 8×13.4 mm, VP = 8×20 mm). Layout compatibility requires verifying land pattern dimensions against respective JEDEC outlines 32P3K-B (KV) and 32P3H-E (VP).