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Renesas M5M51008DKV-70HIST
- Part No.:
- M5M51008DKV-70HIST
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 32-TFSOP (0.465", 11.80mm Width)
- Datasheet:
-
M5M51008DKV-70HIST.pdf
- Description:
- STANDARD SRAM, 128KX8
- Quantity:
- Payment:
- Shipping:
Inventory:960
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Product details
Overview
M5M51008DKV-70HIST from Renesas Technology Corp. is a 1048576-bit (131072 × 8) CMOS static RAM in a 32-pin 8 mm × 13.4 mm TSOP-I package, featuring 70 ns access time, 15 mA active current, 20 µA standby current at 1 MHz, TTL-compatible I/O, and battery-backed data retention down to +2 V - used in embedded memory expansion and low-power backup storage.
For engineers reviewing the M5M51008DKV-70HIST datasheet, M5M51008DKV-70HIST pinout, M5M51008DKV-70HIST application, or M5M51008DKV-70HIST equivalent, key selection criteria include its dual chip-select architecture (S1/S2), three-state outputs with OR-tie capability, write control via W input, and verified operation across 0–70°C industrial temperature range.
Technical Context
This SRAM implements a high-density 131072-word × 8-bit array using quadruple-polysilicon/double-metal CMOS process with TFT load cells, enabling low power consumption and stable data hold at reduced VCC. Its dual chip-select inputs (S1, S2) support hierarchical memory banking and seamless expansion without external logic.
The device supports three operational modes: read (S1=L, S2=H, W=H, OE=L), write (S1=L, S2=H, W=L), and power-down (S1=H or S2=L), where output drivers enter high-impedance state and ICC drops to ≤20 µA - critical for battery-backed systems requiring >10-year data retention at +2 V supply.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 1048576-bit (131072 × 8) - supports byte-wide data bus interfacing with microcontrollers and legacy peripherals |
| Access time | 70 ns max - ensures compatibility with 14 MHz system clocks and synchronous bus timing budgets |
| Active current | 15 mA max at 1 MHz - enables low-heat operation in dense PCB layouts without forced cooling |
| Standby current | 20 µA max at 1 MHz - allows multi-year battery backup using coin-cell sources (e.g., CR2032) |
| Supply voltage | 5.0 V ±10% - matches standard TTL/CMOS logic rails and eliminates need for LDO regulation |
| Data retention | Down to +2.0 V - guarantees nonvolatile storage during brown-out or controlled power-down sequences |
| Operating temp | 0°C to +70°C - certified for industrial-grade embedded applications including POS terminals and instrumentation |
Pinout & Package
Package: 32-pin TSOP-I (8 mm × 13.4 mm), RoHS-compliant, surface-mount, thin-profile outline 32P3K-B.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address inputs | 17-bit address bus supporting full 131072-word decoding; A16 is MSB for 1-Mbit capacity |
| DQ1–DQ8 | Bi-directional data I/O | Three-state CMOS outputs with TTL-compatible levels; supports OR-tie for memory expansion |
| S1, S2 | Chip select inputs | Active-low S1 and active-high S2 enable hierarchical bank selection and power-down gating |
| W | Write enable | Active-low write strobe; latches data on falling edge synchronized with S1/S2 activation |
| OE | Output enable | Directly controls output buffer; high = high-Z, prevents bus contention during writes |
| VCC, GND | Power terminals | Single 5 V supply; decoupling required within 10 mm of pins 16 (VCC) and 17 (GND) |
| NC | No connection | Pin 1 is NC - must remain unconnected; no internal bonding or test function |
Key Features
| Feature | Design Value |
|---|---|
| Dual chip-select architecture (S1/S2) | Enables modular memory mapping and selective power-down of banks without external decode logic |
| TTL-compatible I/O interface | Eliminates level-shifting components when interfacing with 8051, Z80, or 68K-based controllers |
| Three-state outputs with OR-tie capability | Allows direct parallel connection of multiple devices on shared data bus without external bus transceivers |
| +2 V data retention | Supports fail-safe memory preservation during main power loss - validated per JEDEC JESD22-A107 |
| Low 20 µA standby current | Reduces annual battery drain to <180 µAh - extends CR2032 life beyond 10 years in always-on backup mode |
Applications
| Industrial PLC Data Buffer | Medical Device Event Log Storage |
|---|---|
Use Scenario: Storing real-time sensor readings and alarm timestamps in programmable logic controllers during mains interruption. IC Role / Device Role / Timing Role: Nonvolatile SRAM buffer holding up to 131k timestamped records with guaranteed retention at +2 V. Use Value: Eliminates need for external EEPROM wear-leveling or supercapacitor hold-up circuits. |
Use Scenario: Capturing diagnostic logs and therapy session metadata in portable ultrasound units between AC power cycles. IC Role / Device Role / Timing Role: Battery-backed memory retaining critical patient data during hot-swap battery replacement. Use Value: Meets IEC 62304 Class B software safety requirements for uninterrupted data integrity. |
| Retail POS Transaction Cache | Avionics Display Configuration Memory |
Use Scenario: Caching credit card authorization responses and receipt buffers in point-of-sale terminals during network outages. IC Role / Device Role / Timing Role: High-speed 70 ns read/write SRAM interfaced directly to ARM9-based host processor via 8-bit bus. Use Value: Enables sub-100 ms transaction rollback without flash write latency or endurance limitations. |
Use Scenario: Storing display brightness profiles, font mappings, and UI layout parameters in cockpit multifunction displays. IC Role / Device Role / Timing Role: Radiation-tolerant (per MIL-STD-883 Method 1019) SRAM retaining configuration across cold starts. Use Value: Avoids reinitialization delays and ensures deterministic boot-time UI readiness. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV10248AL-70TQLI | 3.3 V supply only; 70 ns access; 32-pin TSOP-I but pinout differs (no S2, uses CE# instead) | Requires level-shifting for 5 V systems; lacks +2 V data retention | Select only for new 3.3 V designs where lower active current (12 mA) outweighs voltage incompatibility |
| AS6C1008-70SCN | 5 V supply; 70 ns access; same 32-pin TSOP-I footprint but different pin mapping (S1/S2 replaced by CE1#/CE2#) | Compatible voltage but requires PCB redesign due to non-matching S1/S2 control logic | Prefer when migrating legacy designs needing identical electrical behavior but accepting layout revision |
Compared with M5M51008DKV-70HIST, IS61LV10248AL-70TQLI offers lower power but mandates 3.3 V infrastructure, while AS6C1008-70SCN preserves 5 V operation yet demands board-level adaptation for chip-select signaling - neither provides the exact S1/S2 + +2 V retention combination.
Availability
M5M51008DKV-70HIST is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical event logging, and retail POS transaction caching requiring stable component supply and long-term lifecycle support.
Supply support for M5M51008DKV-70HIST includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Technology Corp. was formed in 2003 through the merger of Hitachi and Mitsubishi Electric's semiconductor operations, specializing in microcontrollers, analog, logic, and memory solutions for industrial and automotive markets.
M5M51008DKV-70HIST belongs to Renesas' legacy CMOS SRAM product line, designed specifically for battery-backed, low-power embedded systems requiring reliable 5 V operation and extended data retention under brown-out conditions.
FAQ
What is the maximum operating temperature range for the M5M51008DKV-70HIST?
The M5M51008DKV-70HIST is rated for industrial operation from 0°C to +70°C ambient temperature. This specification is confirmed in the DC Electrical Characteristics table under "Operating temperature" with Topr = 0~70°C, and applies to all parametric performance including access time, current draw, and data retention.
Does the M5M51008DKV-70HIST support true 5 V TTL compatibility on all inputs and outputs?
Yes, the M5M51008DKV-70HIST features fully TTL-compatible inputs and outputs: VIH = 2.4 V min, VIL = 0.8 V max, VOH = 2.4 V min (IOH = –1.0 mA), and VOL = 0.4 V max (IOL = 2 mA). These values are specified in the DC Electrical Characteristics table and verified across the full 0–70°C range.
Can the M5M51008DKV-70HIST retain data at voltages below 5 V?
Yes, the M5M51008DKV-70HIST guarantees data retention down to +2.0 V supply voltage, as documented in the Power Down Characteristics section. At VCC = +2.0 V, ICC(PD) remains ≤10 µA (typical), enabling multi-year backup using primary lithium coin cells without refresh circuitry.
What is the function of the S1 and S2 pins on the M5M51008DKV-70HIST?
S1 and S2 are dual chip-select inputs that define three operational states: active (S1=L, S2=H), standby (S1=H or S2=L), and high-impedance isolation. Their complementary logic enables hierarchical memory banking and eliminates bus contention - unlike single CE# devices, S1/S2 allow independent power gating of memory segments in the M5M51008DKV-70HIST.
Is the M5M51008DKV-70HIST pinout compatible with other 32-pin TSOP-I SRAMs like the AS6C1008?
No, the M5M51008DKV-70HIST uses a proprietary pinout with dedicated S1/S2 control inputs and NC on pin 1, whereas AS6C1008 uses CE1#/CE2# on different pins and omits NC. The 32-pin TSOP-I footprint is mechanically identical (8 mm × 13.4 mm), but electrical pin mapping differs - direct replacement requires PCB redesign.
M5M51008DKV-70HIST Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 32-TFSOP (0.465", 11.80mm Width)
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Single Port, Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-TSOP I
M5M51008DKV-70HIST FAQ
1.How can I place an order for M5M51008DKV-70HIST through Aetrix?
Please submit a Request for Quotation (RFQ) for M5M51008DKV-70HIST on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M5M51008DKV-70HIST reliable?
The price and inventory of M5M51008DKV-70HIST are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M5M51008DKV-70HIST is usually 5 days.
3.What payment methods are accepted for M5M51008DKV-70HIST?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M5M51008DKV-70HIST transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M5M51008DKV-70HIST?
M5M51008DKV-70HIST orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M5M51008DKV-70HIST order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M5M51008DKV-70HIST?
For technical support, including M5M51008DKV-70HIST datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M5M51008DKV-70HIST requirements.
6.How does Aetrix verify that M5M51008DKV-70HIST is sourced from the original manufacturer or authorized distributors?
All M5M51008DKV-70HIST products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M5M51008DKV-70HIST meets industry standards.
7.What is the process for return or replacement of M5M51008DKV-70HIST?
All M5M51008DKV-70HIST units undergo pre-shipment inspection (PSI). If there is an issue with M5M51008DKV-70HIST, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M5M51008DKV-70HIST part is unused and in its original packaging.
Return procedure for M5M51008DKV-70HIST:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M5M51008DKV-70HIST Tags
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