Renesas M5M51008DVP-55H#BT

Overview

M5M51008DVP-55H#BT from Renesas Technology Corp. is a 1048576-bit (131072 × 8) CMOS static RAM in 32-pin TSOP-II (8 × 20 mm) package, featuring 55 ns access time, 15 mA active current, 20 µA standby current at 1 MHz, TTL-compatible I/O, and battery-backed data retention down to +2 V - deployed in embedded control modules requiring nonvolatile memory expansion with low-power hold capability.

For engineers reviewing the M5M51008DVP-55H#BT datasheet, M5M51008DVP-55H#BT pinout, M5M51008DVP-55H#BT application, or M5M51008DVP-55H#BT equivalent, key selection criteria include access timing under 55 ns, dual chip-select logic (S1/S2), three-state outputs with OR-tie support, and verified +2 V data retention during power-down - all critical for legacy industrial controller memory upgrades and battery-buffered data logging systems.

Technical Context

This SRAM implements a 21-bit address bus (A0–A16) supporting 131072-word addressing, with dual active-low chip select inputs (S1, S2) enabling hierarchical memory banking and seamless expansion without external decoding logic. Its write control uses W (write enable) in conjunction with S1/S2 to define three distinct operational modes: read, write, and high-impedance non-selection.

The device employs TFT load cells and quadruple-polysilicon/double-metal CMOS process technology to achieve low leakage and stable data hold at reduced V_CC. Power-down operation is triggered by asserting S1 high or S2 low while maintaining V_CC ≥ 2.2 V, reducing ICC to ≤10 µA and preserving contents at +2 V supply - confirmed per DC electrical specs and power-down timing diagrams.

Key Specifications

Pinout & Package

Package: 32-pin Thin Small Outline Package (TSOP-II), 8 mm × 20 mm body, lead pitch 0.5 mm, normal lead bend (VP variant). Compliant with JEDEC MO-141AC outline 32P3H-E.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with IS61LV10248AL-10TLI and AS6C1008-55PCN, the M5M51008DVP-55H#BT uniquely combines 5 V operation, 55 ns timing, TSOP-II packaging, and guaranteed +2 V data retention - making it irreplaceable in legacy 5 V industrial and medical systems requiring battery-backed memory integrity.

Availability

M5M51008DVP-55H#BT is available at Aetrix Electronics and suitable for industrial PLC memory expansion, portable medical data loggers, and automotive body control modules requiring stable component supply across long-lifecycle production programs.

Supply support for M5M51008DVP-55H#BT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Technology Corp. was formed in 2003 through the merger of Hitachi and Mitsubishi Electric's semiconductor operations, specializing in microcontrollers, analog, logic, and memory solutions for industrial and automotive markets.

The M5M51008D series belongs to Renesas' legacy CMOS SRAM product line, designed specifically for 5 V embedded systems needing reliable, low-power, pin-compatible memory upgrades with battery backup capability.

FAQ

What is the minimum operating voltage for data retention in M5M51008DVP-55H#BT?

The M5M51008DVP-55H#BT guarantees full data retention at +2.0 V supply when placed in standby mode (S1 high or S2 low). This is validated per DC electrical characteristics and power-down timing specs in the original Mitsubishi datasheet Ver. 1.1. Operation below +2.0 V risks data loss; the device is not rated for sub-2 V hold. M5M51008DVP-55H#BT achieves this via optimized TFT load cell design and low-leakage CMOS process.

Does M5M51008DVP-55H#BT support true 5 V TTL compatibility on all inputs and outputs?

Yes, M5M51008DVP-55H#BT features fully TTL-compatible inputs (V_IL ≤ 0.8 V, V_IH ≥ 2.4 V) and outputs (V_OH ≥ 2.4 V at I_OH = –1.0 mA, V_OL ≤ 0.4 V at I_OL = 2 mA), eliminating level shifters in 5 V systems. This is explicitly confirmed in the DC Electrical Characteristics table for Ta = 0–70°C and V_CC = 5 V ±10%. M5M51008DVP-55H#BT maintains these levels across its full industrial temperature range.

How does the dual chip select (S1/S2) logic function in M5M51008DVP-55H#BT?

In M5M51008DVP-55H#BT, the device activates only when S1 = L and S2 = H; any other combination (S1 = H, S2 = L, or both high/both low) places the SRAM in high-impedance standby mode with ICC ≤ 20 µA. This enables hierarchical memory banking - e.g., S2 selects a memory bank, S1 selects a device within it. The function table and timing diagrams confirm that S1/S2 control both access and power state. M5M51008DVP-55H#BT requires no external decoding logic for multi-chip configurations.

What is the maximum clock frequency supported for continuous read/write cycling with M5M51008DVP-55H#BT?

M5M51008DVP-55H#BT does not use a clock input; it is an asynchronous SRAM. Its maximum effective throughput is governed by access time (55 ns) and cycle time (t_CR = 70 ns for -55H grade). At 5 V, sustained random read/write rates up to ~14.3 MHz are achievable (1 / 70 ns). The 1 MHz reference in standby current specs reflects test condition, not operational limit. M5M51008DVP-55H#BT performance is constrained only by board-level signal integrity and timing margins.

Is M5M51008DVP-55H#BT RoHS compliant and lead-free?

M5M51008DVP-55H#BT is a pre-RoHS-era device manufactured prior to 2003 under Mitsubishi Electric specifications; it contains lead in solder terminations and die attach. Renesas does not list this part as RoHS-compliant in current databases. For new designs requiring RoHS compliance, consider modern alternatives like ISSI IS61LV10248AL. M5M51008DVP-55H#BT remains available for legacy repair and long-lifecycle industrial programs where exemptions apply.