Renesas M5M51008DVP-55HIBT

Overview

M5M51008DVP-55HIBT from Renesas Technology Corp. is a 1048576-bit (131072 × 8) CMOS static RAM in a 32-pin TSOP-I package, featuring 55 ns access time, 15 mA active current, and 20 µA standby current at 1 MHz. It supports TTL-compatible I/O, three-state outputs with OR-tie capability, and data retention down to +2 V for battery-backup systems in embedded controllers and industrial instrumentation.

For engineers reviewing the M5M51008DVP-55HIBT datasheet, M5M51008DVP-55HIBT pinout, M5M51008DVP-55HIBT application, or M5M51008DVP-55HIBT equivalent, key selection criteria include its dual chip-select architecture (S1/S2), write-control flexibility (W or S1/S2 modes), low-voltage hold capability, and TSOP-I footprint compatibility with legacy Mitsubishi/Renesas SRAM designs.

Technical Context

The M5M51008DVP-55HIBT implements a 131072-word × 8-bit memory array organized into 512 rows × 128 columns × 16 blocks, fabricated using quadruple-polysilicon/double-metal CMOS technology with TFT load cells. Its control logic uses two independent chip-select inputs (S1, S2) and a write-enable input (W) to define read, write, and high-impedance states via combinational decoding.

It supports three distinct power-down modes: non-selection (S1=H or S2=L), S1-controlled power-down (S1=H, S2≥V_CC–0.2 V), and S2-controlled power-down (S2=L, S1≤0.2 V), enabling selective memory bank isolation and sub-10 µA hold current at V_CC = 2.2 V. Output enable (OE) provides bus contention prevention independent of S1/S2 state.

Key Specifications

Pinout & Package

Package: 32-pin Thin Small Outline Package (TSOP-I), 8 mm × 20 mm, lead pitch 0.5 mm, normal lead bend (Type VP). Compliant with JEDEC MO-153.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with IS61LV10248AL-10TLI and AS6C1008-55PCN, the M5M51008DVP-55HIBT uniquely delivers 2 V data retention and dual-chip-select expansion in a drop-in 5 V TSOP-I package-making it irreplaceable for legacy industrial and medical systems requiring battery-backed reliability without redesign.

Availability

M5M51008DVP-55HIBT is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical device parameter storage, and automotive body control modules requiring stable component supply across extended product lifecycles.

Supply support for M5M51008DVP-55HIBT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Technology Corp. (now part of Renesas Electronics Corporation) is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The M5M51008DVP-55HIBT belongs to Renesas' legacy CMOS SRAM product line, designed specifically for high-reliability, battery-backed memory applications in cost-sensitive embedded systems requiring TTL compatibility and long-term obsolescence support.

FAQ

What is the minimum supply voltage required for data retention in the M5M51008DVP-55HIBT?

The M5M51008DVP-55HIBT guarantees data retention down to +2.0 V, as specified in the Power Down Characteristics section. At this voltage, the device maintains stored data indefinitely at 25°C with ICC(PD) ≤ 10 µA. This enables direct coin-cell backup without regulation-critical for medical and industrial applications where power integrity is mission-critical. The M5M51008DVP-55HIBT achieves this via optimized TFT load cell design and low-leakage CMOS process.

Does the M5M51008DVP-55HIBT support true 5 V TTL compatibility on all inputs and outputs?

Yes, the M5M51008DVP-55HIBT features fully TTL-compatible inputs (VIH = 2.4 V min, VIL = 0.8 V max) and outputs (VOH = 2.4 V min at IOH = –1.0 mA, VOL = 0.4 V max at IOL = 2.0 mA) at VCC = 5 V ±10%. This eliminates level-shifting components when interfacing with legacy 8051, Z80, or 5 V FPGA I/O banks. The M5M51008DVP-55HIBT meets these specs across its full operating temperature range (0–70°C).

How does the dual chip-select (S1/S2) architecture of the M5M51008DVP-55HIBT simplify memory expansion?

The M5M51008DVP-55HIBT uses S1 and S2 as independent chip-select inputs: activation requires S1 = L and S2 = H. Either S1 = H or S2 = L places the device in high-impedance standby with ICC ≤ 20 µA. This allows up to 16 devices to be daisy-chained using decoded address bits-e.g., A17/A18 driving S1/S2-eliminating external 3-to-8 decoders. The M5M51008DVP-55HIBT thus reduces board space and BOM count in multi-bank memory systems.

Can the M5M51008DVP-55HIBT be used in write-cycle modes other than W-controlled operation?

Yes, the M5M51008DVP-55HIBT supports three write initiation modes: W-controlled (W = L, S1 = L, S2 = H), S1-controlled (S1 = L, S2 = H, W = H), and S2-controlled (S1 = L, S2 = L, W = H). Each mode has distinct setup/hold timing-e.g., S2-controlled write requires tsu(S2) = 50 ns. This flexibility allows optimization for different MCU bus protocols. The M5M51008DVP-55HIBT's function table explicitly defines all valid combinations and their resulting ICC states.

Is the M5M51008DVP-55HIBT pinout compatible with other members of the M5M51008D family such as the M5M51008DRV-55HIBT?

Yes, the M5M51008DVP-55HIBT shares identical pinout and electrical specifications with M5M51008DRV-55HIBT and M5M51008DKV-55HIBT-all are 32-pin TSOP-I packages differing only in lead bend orientation (normal vs. reverse vs. compact). Pin functions (A0–A16, DQ1–DQ8, S1, S2, W, OE, VCC, GND, NC) are electrically and physically identical. The M5M51008DVP-55HIBT can be substituted for DRV/KV variants without PCB modification, provided solder profile matches TSOP-I reflow requirements.