Renesas M5M51008DVP-70H#BT

Overview

M5M51008DVP-70H#BT from Renesas Technology Corp. is a 1048576-bit (131072 × 8) CMOS static RAM in 32-pin TSOP-I (8 × 20 mm) package, featuring 70 ns access time, 15 mA active current, 20 µA standby current at 1 MHz, TTL-compatible I/O, and battery-backed data retention down to +2 V. It serves as main memory or buffer in embedded controllers requiring low-power, non-volatile hold during power-down.

For engineers reviewing the M5M51008DVP-70H#BT datasheet, M5M51008DVP-70H#BT pinout, M5M51008DVP-70H#BT application, or M5M51008DVP-70H#BT equivalent, key selection criteria include access timing under 5V±10%, dual chip-select logic (S1/S2), three-state output control via OE, write-enable mode flexibility (W/S1/S2 combinations), and TSOP-I mechanical compatibility with space-constrained PCB layouts.

Technical Context

This SRAM implements a 21-bit address bus (A0–A16) supporting 131072 words, with dual active-low chip select inputs (S1, S2) enabling hierarchical memory expansion without external gating. Its write cycle supports three control modes-W-controlled, S1-controlled, and S2-controlled-each with distinct setup/hold timing requirements verified per AC specs.

The device uses quadruple-polysilicon/double-metal CMOS process with TFT load cells for density and low leakage. Power-down operation is triggered by asserting S1 high or S2 low while maintaining V_CC ≥ 2.2 V, reducing ICC to ≤10 µA and retaining data at +2 V supply-critical for backup-capacitor or coin-cell support in portable systems.

Key Specifications

Pinout & Package

Package: 32-pin Thin Small Outline Package (TSOP-I), 8 mm × 20 mm body, 0.5 mm lead pitch, JEDEC MO-153 compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with IS61LV10248AL-70TQLI and AS6C1008-70SCN, the M5M51008DVP-70H#BT uniquely delivers dual-select expandability, +2 V data hold, and TSOP-I footprint - making it optimal for compact, battery-resilient embedded systems where memory partitioning and brown-out robustness are critical.

Availability

M5M51008DVP-70H#BT is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical device parameter storage, and automotive body control modules requiring stable component supply across extended product lifecycles.

Supply support for M5M51008DVP-70H#BT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Technology Corp. (now part of Renesas Electronics Corporation) is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and memory solutions for industrial, automotive, and consumer applications.

The M5M51008DVP-70H#BT belongs to Renesas' legacy CMOS SRAM product line, designed specifically for low-power, high-reliability embedded systems requiring deterministic timing and battery-backed operation.

FAQ

What is the maximum operating temperature range for the M5M51008DVP-70H#BT?

The M5M51008DVP-70H#BT is specified for operation from 0 °C to +70 °C ambient temperature. All DC and AC electrical characteristics-including 70 ns access time, 15 mA active current, and 20 µA standby current-are guaranteed across this full industrial temperature range. Operation outside this range may result in timing violations or data retention loss.

Does the M5M51008DVP-70H#BT support true 5 V TTL-level signaling on all inputs and outputs?

Yes, the M5M51008DVP-70H#BT features fully TTL-compatible inputs (V_IL ≤ 0.8 V, V_IH ≥ 2.2 V) and outputs (V_OL ≤ 0.4 V at I_OL = 2 mA, V_OH ≥ 2.4 V at I_OH = –1.0 mA). This eliminates level-shifting components when interfacing with legacy 5 V microcontrollers such as the Intel 80C51 or Motorola 68HC11, ensuring signal integrity without added BOM cost.

How does the dual chip-select (S1/S2) architecture of the M5M51008DVP-70H#BT simplify memory expansion?

The M5M51008DVP-70H#BT uses S1 (active-low) and S2 (active-high) to define four discrete chip-select states: selected (S1=L, S2=H), deselected (S1=H or S2=L), and two power-down modes. This allows up to four devices to be decoded using only two address bits-no external logic gates required. For example, A17/A18 can directly drive S1/S2 across four chips, reducing PCB routing complexity and improving timing predictability in multi-SRAM systems.

Can the M5M51008DVP-70H#BT retain data when powered at exactly +2.0 V?

Yes, the M5M51008DVP-70H#BT guarantees data retention at V_CC = +2.0 V minimum, as confirmed in the Power Down Characteristics section. At this voltage, standby current remains ≤10 µA (typical), enabling multi-year retention with common backup sources like 220 mAh CR2032 cells or 0.33 F supercapacitors. No external voltage supervisor or reset circuit is needed for basic hold functionality.

What are the valid write control modes supported by the M5M51008DVP-70H#BT?

The M5M51008DVP-70H#BT supports three distinct write control modes: (1) W-controlled (W low, S1 low, S2 high), (2) S1-controlled (S1 low, W low, S2 high), and (3) S2-controlled (S2 high, W low, S1 low). Each mode has unique setup/hold timing-e.g., tsu(D) is 0 ns in W-control but 50 ns in S1-control. The M5M51008DVP-70H#BT datasheet's Function Table and Timing Diagrams specify exact constraints for reliable latch behavior in each mode.