Renesas M5M51008DVP-70HIBT

Overview

M5M51008DVP-70HIBT from Renesas Electronics is a 1-Mbit (131,072 × 8) CMOS static RAM with 70 ns access time, TTL-compatible I/O, and dual chip select (S1/S2) for memory expansion. It operates at 5 V ±10%, supports battery backup down to +2 V, and features three-state outputs with OE control - used in embedded controllers, industrial PLCs, and legacy instrumentation requiring non-volatile data retention during power-down.

For engineers reviewing the M5M51008DVP-70HIBT datasheet, M5M51008DVP-70HIBT pinout, M5M51008DVP-70HIBT application, or M5M51008DVP-70HIBT equivalent, key selection criteria include access timing consistency across temperature (–40°C to +85°C), low standby current (40 µA at 1 MHz), S1/S2-controlled power-down mode, and TSOP-32 (8 × 20 mm) surface-mount compatibility with PCB layout flexibility for reverse/normal lead bend variants.

Technical Context

This SRAM implements a 21-bit address bus (A0–A16) with 8-bit bidirectional data I/O (DQ1–DQ8), controlled by active-low write (W), output enable (OE), and two independent chip select inputs (S1, S2). Its functional architecture enables OR-tie expansion and selective power-down: asserting S1=L/S2=H enables read/write; S1=H or S2=L places the device in high-impedance standby with data retention at V_CC ≥ 2 V.

Timing is defined by strict setup/hold requirements - e.g., address must be stable ≥50 ns before W low (tsu(A-WH)), data hold ≥0 ns after W low (th(D)), and output enable time ≤25 ns (ten(OE)) under CL = 100 pF load. The device uses quadruple-polysilicon/double-metal CMOS process with TFT load cells to achieve density and low ICC3/ICC4 standby current.

Key Specifications

Pinout & Package

Package: 32-pin Thin Small Outline Package (TSOP-I), 8 mm × 20 mm body, normal lead bend (Type VP), JEDEC standard outline 32P3H-E.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with IS61LV10248AL-70TLI, M5M51008DVP-70HIBT avoids voltage translation overhead in legacy 5 V designs; versus AS6C1008-70SCN, it offers identical form-fit-function but with Renesas' industrial temperature qualification and long-term supply continuity assurance.

Availability

M5M51008DVP-70HIBT is available at Aetrix Electronics and suitable for industrial PLCs, legacy test equipment, and medical diagnostic instruments requiring stable component supply, extended temperature operation, and long-lifecycle support.

Supply support for M5M51008DVP-70HIBT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and memory solutions for industrial and automotive markets.

The M5M51008DVP-70HIBT belongs to Renesas' legacy CMOS SRAM product line, designed specifically for cost-sensitive, high-reliability industrial applications where 5 V compatibility, battery backup, and long-term availability are critical.

FAQ

What is the maximum operating temperature range for the M5M51008DVP-70HIBT?

The M5M51008DVP-70HIBT is rated for operation from –40°C to +85°C, meeting industrial-grade thermal requirements. This range is validated per DC and AC electrical specifications in the official Renesas datasheet, with all timing parameters (e.g., 70 ns access time) guaranteed across this full span without derating. The device uses standard "Standard" quality grade per Renesas classification, intended for industrial robots, test equipment, and office automation systems.

Does the M5M51008DVP-70HIBT support true battery backup operation below 5 V?

Yes, the M5M51008DVP-70HIBT retains stored data down to +2 V on V_CC, enabling true battery backup functionality during main power loss. This is confirmed in the Power Down Characteristics section of the datasheet, where ICC(PD) remains ≤20 µA at V_CC(PD) = 2.0 V and T_A = +85°C. No external circuitry is required - the device automatically enters low-power retention mode when S1 or S2 is deasserted.

Is the M5M51008DVP-70HIBT pin-compatible with other TSOP-32 SRAMs like the AS6C1008-70SCN?

Yes, the M5M51008DVP-70HIBT shares identical pinout, package dimensions (8 mm × 20 mm TSOP-I), and signal assignments with the AS6C1008-70SCN, including NC placement at pins 13 and 32. Both support S1/S2-controlled power-down and +2 V data retention. This pin-to-pin compatibility is documented in Alliance Semiconductor's datasheet and verified against Renesas' official pin configuration diagram.

What are the key timing constraints for reliable write operations on the M5M51008DVP-70HIBT?

For guaranteed write operation, the M5M51008DVP-70HIBT requires: address setup ≥50 ns before W low (tsu(A-WH)), data setup ≥0 ns before W low (tsu(D)), and data hold ≥0 ns after W low (th(D)). Additionally, S1 must be low and S2 high during the write pulse (tw(W) ≥ 50 ns), with output enable (OE) high to disable outputs. These values are specified under CL = 100 pF load and –40°C to +85°C conditions.

Can the M5M51008DVP-70HIBT be used in new designs given its legacy status?

Yes, the M5M51008DVP-70HIBT remains actively supported by Renesas for industrial applications and is available through authorized distributors with documented long-term supply commitments. Its proven reliability, full industrial temperature rating, and pin compatibility with second-source alternatives (e.g., AS6C1008-70SCN) make it viable for new designs where 5 V parallel SRAM, battery backup, and TSOP-32 footprint are required - especially in maintenance, retrofits, and cost-optimized embedded systems.