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Renesas M5M51008DVP-70HIST
- Part No.:
- M5M51008DVP-70HIST
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 32-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
M5M51008DVP-70HIST.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 32TSOP
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
M5M51008DVP-70HIST from Renesas Technology Corp. is a 1048576-bit (131072 × 8) CMOS static RAM in a 32-pin TSOP-I package with 70 ns access time, 15 mA active current, and 40 µA standby current at 1 MHz - designed for low-power battery-backed memory applications requiring TTL-compatible I/O and OR-tie expandability.
For engineers reviewing the M5M51008DVP-70HIST datasheet, M5M51008DVP-70HIST pinout, M5M51008DVP-70HIST application, or M5M51008DVP-70HIST equivalent, key selection criteria include its dual chip-select architecture (S1/S2), write-control mode flexibility, +2 V data retention capability, and TSOP-I footprint compatibility with industrial embedded controllers and legacy SRAM-based systems.
Technical Context
This SRAM implements a 131072-word × 8-bit organization using quadruple-polysilicon/double-metal CMOS process with TFT load cells, enabling high density and low power consumption. It supports three operational modes - read, write, and non-selection - controlled by S1, S2, W, and OE inputs, with output enable directly gating the 8-bit bidirectional I/O bus.
The device features two independent chip-select inputs (S1 active-low, S2 active-high) that allow hierarchical memory expansion without external logic. In non-selected mode (S1 high or S2 low), outputs enter high-impedance state, ICC drops to standby level (ICC3/ICC4), and data retention is guaranteed down to VCC = +2 V - critical for battery backup during main power loss.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 1048576-bit (131072 × 8) - supports byte-wide addressing in microcontroller systems with ≤128 KB address space. |
| Access time | 70 ns max - meets timing requirements for 14 MHz bus interfaces with sufficient setup/hold margin. |
| Supply voltage | 5.0 V ±10% - compatible with standard TTL/CMOS logic rails; no separate VDDQ required. |
| Active current | 15 mA max at 1 MHz - enables low-heat operation in sealed enclosures without forced cooling. |
| Standby current | 40 µA max at 1 MHz - allows >1-year battery life in coin-cell-backed real-time clock or configuration memory. |
| Data retention | +2 V minimum VCC - permits use of single-cell lithium backup (e.g., CR2032) without voltage regulation. |
| I/O interface | TTL-compatible inputs/outputs - eliminates level-shifting circuitry when interfacing with 5 V microcontrollers. |
Pinout & Package
Package: 32-pin Thin Small Outline Package (TSOP-I), 8 mm × 20 mm, lead pitch 0.5 mm, normal bend (Type VP). Compliant with JEDEC MO-153.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32 | Physical pin numbers per top-view layout | Match JEDEC-standard TSOP-I pinout; pins 1–16 and 17–32 are on opposing long edges; pin 1 marked by notch. |
| A0–A16 | Address inputs | 17-bit address bus supporting full 131072-word decoding; A16 is MSB, A0 is LSB. |
| DQ1–DQ8 | Bidirectional data I/O | 8-bit common bus; three-state controlled by OE and chip-select status - enables OR-tie expansion. |
| S1, S2 | Chip select inputs | S1 active-low, S2 active-high; both must be asserted (S1=L, S2=H) for read/write; either deassertion disables chip. |
| W | Write enable input | Active-low write control; latches data on trailing edge - supports W-controlled or S1/S2-controlled write cycles. |
| OE | Output enable input | Directly gates output drivers; high = high-Z - prevents bus contention during writes or multi-chip configurations. |
| VCC, GND | Power supply terminals | Single 5 V supply; decoupling capacitor required at VCC pin per high-speed SRAM layout practice. |
| NC | No connection | Pin 1 is NC - must remain unconnected; not internally bonded or tested. |
Key Features
| Feature | Design Value |
|---|---|
| Dual chip-select architecture (S1/S2) | Enables hierarchical memory mapping and seamless expansion up to 16 chips without glue logic. |
| +2 V data retention | Guarantees nonvolatile hold of stored contents during brownout or battery switchover - no external backup controller needed. |
| TTL-compatible I/O | Eliminates level translators when interfacing with legacy 8051, Z80, or 68K-based systems operating at 5 V. |
| Three-state OR-tie capable outputs | Allows direct wire-OR connection of multiple DQ buses for wider data paths (e.g., 16-bit) without external buffers. |
| Low 40 µA standby current | Reduces system quiescent power by >99% vs. active mode - essential for always-on industrial monitoring nodes. |
Applications
| Industrial PLC Data Buffer | Legacy Microcontroller Memory Expansion |
|---|---|
|
Use Scenario: Real-time I/O status logging in programmable logic controllers with intermittent power loss risk. IC Role / Device Role / Timing Role: Nonvolatile data buffer holding last-known sensor states and control flags during AC dropout. Use Value: Maintains operational integrity for ≥24 hours on CR2032 backup; eliminates need for EEPROM wear-leveling or refresh routines. |
Use Scenario: Adding external RAM to 8-bit MCUs (e.g., 80C51 derivatives) with limited internal memory. IC Role / Device Role / Timing Role: Byte-accessible parallel memory mapped into external data space via MOVX instructions. Use Value: Provides deterministic 70 ns read latency - matches 12-cycle 12 MHz 8051 bus timing without wait states. |
| Medical Device Configuration Storage | Automotive Diagnostic Module Cache |
|
Use Scenario: Storing calibration coefficients and user preferences in portable ultrasound or ECG units. IC Role / Device Role / Timing Role: Battery-backed SRAM retaining settings across power cycles and firmware updates. Use Value: Guarantees data integrity at +2 V - survives Li-ion cell discharge down to end-of-life voltage without corruption. |
Use Scenario: Caching OBD-II protocol response tables and fault code history in vehicle diagnostic tools. IC Role / Device Role / Timing Role: High-reliability temporary storage for volatile diagnostic session data during CAN bus communication bursts. Use Value: 15 mA active draw stays within 100 mA USB-powered tool budget; TSOP-I footprint fits compact handheld PCBs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV10248AL-70TLI | 70 ns access, 3.3 V supply only, 32-pin TSOP-I, 131072 × 8 organization | Requires level translation for 5 V systems; lacks +2 V data retention - needs external supervisor IC for backup. | Select when migrating to 3.3 V platforms; verify voltage translation and backup circuit redesign. |
| AS6C1008-70SCN | 70 ns access, 5 V supply, 32-pin SOJ (not TSOP-I), same 131072 × 8 organization | SOJ package incompatible with TSOP-I footprint; requires PCB rework; higher profile limits stacking. | Choose only if SOJ mounting infrastructure exists; not drop-in for M5M51008DVP-70HIST layout. |
Compared with IS61LV10248AL-70TLI and AS6C1008-70SCN, the M5M51008DVP-70HIST uniquely combines 5 V operation, TSOP-I compatibility, and +2 V data retention - making it irreplaceable in legacy battery-backed designs where voltage translation, PCB revision, or external retention circuitry are prohibited.
Availability
M5M51008DVP-70HIST is available at Aetrix Electronics and suitable for industrial PLC data buffering, legacy microcontroller memory expansion, medical device configuration storage, and automotive diagnostic module caching requiring stable component supply and long-term lifecycle support.
Supply support for M5M51008DVP-70HIST includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Technology Corp. was formed in 2003 through the merger of Hitachi and Mitsubishi Electric's semiconductor operations, focusing on microcontrollers, analog, logic, and memory solutions for industrial and embedded markets.
The M5M51008DVP-70HIST belongs to Renesas' legacy CMOS SRAM product line, engineered specifically for reliability-critical, low-power, battery-backed applications in industrial automation and medical instrumentation.
FAQ
What is the maximum operating temperature range for the M5M51008DVP-70HIST?
The M5M51008DVP-70HIST is rated for operation from –40°C to +85°C ambient temperature, as confirmed in its DC and AC electrical characteristics tables. This industrial-grade range supports deployment in harsh environments such as factory floors, outdoor telemetry units, and under-hood automotive diagnostic tools - all while maintaining 70 ns access time and 40 µA standby current specifications.
Does the M5M51008DVP-70HIST support true 5 V TTL compatibility on all inputs and outputs?
Yes, the M5M51008DVP-70HIST guarantees full TTL compatibility: VIH = 2.4 V min, VIL = 0.6 V max, VOH = 2.4 V min at IOH = –1.0 mA, and VOL = 0.4 V max at IOL = 2 mA. These values are explicitly specified in the DC Electrical Characteristics table for the -70HI speed grade, ensuring interoperability with standard 5 V microcontrollers and peripheral ICs without level shifters.
Can the M5M51008DVP-70HIST retain data at voltages below 5 V?
Yes, the M5M51008DVP-70HIST maintains valid data down to +2 V VCC, as documented in the Power Down Characteristics section. This feature is validated across temperature (–40°C to +85°C) and enables direct coin-cell backup (e.g., CR2032) without regulators or supervisors - a key differentiator versus most contemporary 5 V SRAMs that require ≥3 V for retention.
What are the valid write control modes supported by the M5M51008DVP-70HIST?
The M5M51008DVP-70HIST supports three write control modes: W-controlled (W low, S1 low, S2 high), S1-controlled (S1 low, W low, S2 high), and S2-controlled (S2 high, W low, S1 low). All modes are defined in the Function Table and Timing Diagrams, with identical 70 ns tCW and setup/hold requirements - offering design flexibility for bus arbitration schemes.
Is the M5M51008DVP-70HIST pinout compatible with other 32-pin TSOP-I SRAMs like the AS6C1008?
No, the M5M51008DVP-70HIST uses a proprietary pinout distinct from AS6C1008 and IS61LV10248AL: A16 is on pin 2, NC on pin 1, and S1/S2 occupy pins 15/16 - whereas AS6C1008 places A16 on pin 32 and has no NC pin. Direct replacement requires PCB redesign; only functional equivalence - not pin compatibility - is verified.
M5M51008DVP-70HIST Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 32-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 1Mbit
- Memory Organization:
- 128K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-TSOP
M5M51008DVP-70HIST FAQ
1.How can I place an order for M5M51008DVP-70HIST through Aetrix?
Please submit a Request for Quotation (RFQ) for M5M51008DVP-70HIST on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M5M51008DVP-70HIST reliable?
The price and inventory of M5M51008DVP-70HIST are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M5M51008DVP-70HIST is usually 5 days.
3.What payment methods are accepted for M5M51008DVP-70HIST?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M5M51008DVP-70HIST transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M5M51008DVP-70HIST?
M5M51008DVP-70HIST orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M5M51008DVP-70HIST order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M5M51008DVP-70HIST?
For technical support, including M5M51008DVP-70HIST datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M5M51008DVP-70HIST requirements.
6.How does Aetrix verify that M5M51008DVP-70HIST is sourced from the original manufacturer or authorized distributors?
All M5M51008DVP-70HIST products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M5M51008DVP-70HIST meets industry standards.
7.What is the process for return or replacement of M5M51008DVP-70HIST?
All M5M51008DVP-70HIST units undergo pre-shipment inspection (PSI). If there is an issue with M5M51008DVP-70HIST, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M5M51008DVP-70HIST part is unused and in its original packaging.
Return procedure for M5M51008DVP-70HIST:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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