Renesas M5M51008DVP-70H#ST

Overview

M5M51008DVP-70H#ST from Renesas Technology Corp. is a 131,072-word × 8-bit (1 Mbit) CMOS static RAM in a 32-pin TSOP-I package with 70 ns access time, 15 mA active current, and 20 µA standby current at 1 MHz - designed for low-power battery-backed memory applications requiring TTL-compatible I/O and OR-tie expansion capability.

For engineers reviewing the M5M51008DVP-70H#ST datasheet, M5M51008DVP-70H#ST pinout, M5M51008DVP-70H#ST application, or M5M51008DVP-70H#ST equivalent, key selection considerations include its dual chip-select architecture (S1/S2), write-control mode flexibility, +2 V data retention, three-state outputs, and compatibility with legacy 5 V microcontroller buses.

Technical Context

This SRAM implements a 21-bit address bus (A0–A16) supporting 131,072 × 8-bit organization, with separate S1/S2 chip select inputs enabling hierarchical memory expansion without external logic. Its dual-select architecture allows non-selected chips to enter ultra-low-power standby (ICC4 = 20 µA) while maintaining data integrity down to VCC = +2 V.

The device supports three operational modes: read (W = high, OE = low, S1 = low, S2 = high), write (W = low, S1 = low, S2 = high), and power-down (S1 = high or S2 = low), with output enable (OE) providing independent bus contention control. All DC/AC timing parameters are specified over 0–70°C and VCC = 5 V ±10%.

Key Specifications

Pinout & Package

Package: 32-pin Thin Small Outline Package (TSOP-I), 8 mm × 20 mm, lead pitch 0.5 mm, normal bend (Type VP). Compliant with JEDEC MO-153.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with IS61LV10248AL-70TQLI and AS6C4008-70PCN, the M5M51008DVP-70H#ST uniquely delivers 5 V TTL compatibility, +2 V data hold, and industry-standard TSOP-I footprint - making it the only option for drop-in replacement in legacy 5 V systems requiring battery backup without redesign.

Availability

M5M51008DVP-70H#ST is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical device parameter storage, and legacy test equipment memory upgrades requiring stable component supply across extended product lifecycles.

Supply support for M5M51008DVP-70H#ST includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Technology Corp. was formed in 2003 through the merger of Hitachi and Mitsubishi Electric's semiconductor operations, specializing in microcontrollers, analog, logic, and memory ICs.

The M5M51008D series belongs to Renesas' legacy CMOS SRAM product line, engineered for reliability in industrial and medical applications where long-term availability, 5 V compatibility, and battery-backed data retention are mandatory.

FAQ

What is the minimum VCC required to retain data in M5M51008DVP-70H#ST?

The M5M51008DVP-70H#ST guarantees data retention down to +2.0 V on VCC, as verified in the Power Down Characteristics section of its datasheet. This enables reliable operation during brown-out conditions or when backed by a single lithium coin cell. The device maintains full data integrity at this voltage without requiring external refresh or auxiliary circuitry - a key requirement for battery-backed applications such as medical loggers and industrial controllers.

Does M5M51008DVP-70H#ST support true three-state outputs independent of chip select?

Yes, the M5M51008DVP-70H#ST provides independent three-state control via the OE (output enable) pin, which forces DQ1–DQ8 into high-impedance regardless of S1/S2 state. This allows bus sharing even when the device is selected, eliminating contention during mixed read/write operations. OE functionality is fully characterized in the Function Table and Timing Diagrams - confirming that OE = high yields high-Z outputs irrespective of S1, S2, or W status.

Can M5M51008DVP-70H#ST be used in place of M5M51008DFP-70H?

Yes, the M5M51008DVP-70H#ST is functionally and electrically identical to the M5M51008DFP-70H, differing only in package: FFP denotes 32-pin SOP (525 mil), while VP denotes 32-pin TSOP-I (8 × 20 mm). Pinout, timing, DC specs, and logic behavior are identical. Migration requires only PCB land pattern change - no schematic or firmware modification is needed for the M5M51008DVP-70H#ST.

What is the maximum clock frequency supported by M5M51008DVP-70H#ST for burst read/write?

The M5M51008DVP-70H#ST does not use a clock input; it is an asynchronous SRAM. Its maximum effective throughput is governed by access time (70 ns) and cycle time (tCR = 70 ns), supporting up to ~14.3 MHz random-address operation. For back-to-back reads/writes, the device requires no clock - timing is controlled solely by S1, S2, W, and OE transitions per the Function Table and AC Electrical Characteristics table.

Is M5M51008DVP-70H#ST compliant with RoHS or lead-free soldering standards?

The original M5M51008DVP-70H#ST datasheet predates RoHS enforcement and specifies standard SnPb eutectic leads. Aetrix Electronics supplies only RoHS-compliant, lead-free versions marked with suffix "#ST", which meet J-STD-020 moisture sensitivity level 3 and withstand peak reflow temperatures of 260°C. Full compliance documentation (IPC-1752, SGS reports) is available upon request for M5M51008DVP-70H#ST.