Renesas M5M5256DFP-70GI#BM

Overview

M5M5256DFP-70GI#BM from Renesas is a 262,144-bit (32,768 × 8) CMOS static RAM in 28-pin 450-mil SOP package, operating from 3.0–5.5 V with 70 ns access time, TTL-compatible I/O, and 0.05 µA typical standby current for battery backup. It serves as non-volatile memory buffer in embedded controllers requiring simple parallel interface and low-power retention.

For engineers reviewing the M5M5256DFP-70GI#BM datasheet, M5M5256DFP-70GI#BM pinout, M5M5256DFP-70GI#BM application, or M5M5256DFP-70GI#BM equivalent, key selection criteria include single-supply operation, /OE-controlled three-state outputs, /S-selectable chip enable, common data I/O bus architecture, and +2.0 V data-hold capability during power loss.

Technical Context

This SRAM uses resistive-load NMOS memory cells with CMOS periphery to achieve high density and ultra-low standby current. Its asynchronous operation requires no clocks or refresh cycles, and supports both /W-controlled and /S-controlled write modes via overlapping active-low control signals.

The device implements direct TTL-level compatibility on all inputs and outputs, enabling seamless integration into legacy 5 V microcontroller buses. Standby mode activates when /S is high, reducing supply current to ≤0.05 µA at Vcc = 5.5 V while retaining data down to +2.0 V supply - critical for fail-safe memory preservation.

Key Specifications

Pinout & Package

Package: 28-pin 450-mil SOP (Outline 28P2W-C), surface-mount compatible with standard reflow profiles and manual soldering.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with IS61LV25616AL-10TLI and AS6C4008-70SCN, the M5M5256DFP-70GI#BM uniquely balances 3.0–5.5 V flexibility, ultra-low 0.05 µA standby, and +2.0 V data retention - making it optimal for portable, battery-assisted, or wide-input-voltage embedded memory applications.

Availability

M5M5256DFP-70GI#BM is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical device data loggers, and automotive body control modules requiring stable component supply and long-term lifecycle support.

Supply support for M5M5256DFP-70GI#BM includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.

The M5M5256DFP-70GI#BM belongs to Renesas' legacy CMOS SRAM product line designed specifically for cost-effective, low-power, pin-compatible memory expansion in resource-constrained embedded systems.

FAQ

What is the maximum operating temperature range for the M5M5256DFP-70GI#BM?

The M5M5256DFP-70GI#BM is rated for operation from –40 °C to +85 °C, meeting industrial temperature requirements. This specification is confirmed in the Absolute Maximum Ratings table and applies across the full 3.0–5.5 V supply range. The device maintains 70 ns access time and 0.05 µA standby current performance throughout this range, making M5M5256DFP-70GI#BM suitable for under-hood automotive modules and factory-floor controllers.

Does the M5M5256DFP-70GI#BM require an external clock or refresh signal?

No, the M5M5256DFP-70GI#BM is a true static RAM and requires neither an external clock nor periodic refresh cycles. Its resistive-load NMOS cell architecture retains data indefinitely as long as Vcc remains above +2.0 V. This eliminates timing controller dependencies and simplifies integration into microcontroller-based systems - a core design feature explicitly stated in the product description and functional table of the M5M5256DFP-70GI#BM datasheet.

Can the M5M5256DFP-70GI#BM operate from a 3.3 V supply?

Yes, the M5M5256DFP-70GI#BM supports 3.0–5.5 V single-supply operation, including nominal 3.3 V rails. DC electrical characteristics confirm VIH = 2.0 V min and VIL = 0.8 V max at Vcc = 3.3 V, ensuring reliable TTL-level compatibility. AC timing remains at 70 ns, and standby current drops to 2.4 µA typical - all verified in the "-XG" and "-GI" variant specifications within the M5M5256DFP-70GI#BM documentation.

What is the purpose of the /S pin on the M5M5256DFP-70GI#BM?

The /S (chip select) pin on the M5M5256DFP-70GI#BM is an active-low enable that controls device selection and power state. When /S is high, the device enters standby mode with outputs in high-impedance and supply current reduced to ≤0.05 µA. When /S is low, the device responds to /W and /OE for read/write operations. This dual-role functionality enables memory expansion via OR-tie and supports battery backup - both explicitly defined in the M5M5256DFP-70GI#BM function table and timing diagrams.

How does the M5M5256DFP-70GI#BM handle data bus contention during write cycles?

The M5M5256DFP-70GI#BM prevents data bus contention using its dedicated /OE (output enable) pin. During write cycles, /OE can be held high to force DQ1–DQ8 into high-impedance regardless of /S or /W state - isolating the bus from conflicting drivers. This behavior is documented in the function table and timing diagrams, and complements the /W-controlled write latching mechanism. The result is deterministic bus arbitration without external bus transceivers, a key advantage of the M5M5256DFP-70GI#BM's architecture.