Renesas M5M5256DFP-70LL#BM
- Part No.:
- M5M5256DFP-70LL#BM
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- -
- Datasheet:
-
M5M5256DFP-70LL#BM.pdf
- Description:
- STANDARD SRAM, 32KX8, 70NS
- Quantity:
- Payment:

- Shipping:

Inventory:7,158
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
M5M5256DFP-70LL#BM from Renesas is a 262,144-bit (32,768 × 8) CMOS static RAM in 28-pin SOP package, operating on single +5V supply with TTL-compatible I/O, three-state outputs, and battery backup capability down to +2.0V. It delivers 70 ns access time, 0.05 µA typical standby current, and supports non-volatile data retention during power failure-ideal for embedded memory subsystems requiring simple interface and low-power hold.
For engineers reviewing the M5M5256DFP-70LL#BM datasheet, M5M5256DFP-70LL#BM pinout, M5M5256DFP-70LL#BM application, or M5M5256DFP-70LL#BM equivalent, key selection criteria include /S-/W-/OE control timing compatibility, 28-pin SOP footprint constraints, 70 ns read/write cycle timing margins, and battery-backed standby operation at Vcc ≥ 2.0 V.
Technical Context
This SRAM implements asynchronous, dual-control write (/S & /W overlap) and output-enable (/OE) logic with high-impedance bus isolation. Its architecture uses resistive-load NMOS memory cells with CMOS periphery, enabling high density and ultra-low standby current without refresh clocks.
It supports two operational modes: /S-controlled (chip-select dominant) and /W-controlled (write-strobe dominant), each with distinct timing requirements for setup/hold, enable/disable, and recovery. Data retention at +2.0V Vcc enables seamless battery backup during main power loss.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 32,768 words × 8 bits = 262,144 bits; matches standard byte-addressable microcontroller bus interfaces. |
| Access time | 70 ns max at Vcc = 5V ±10%; defines minimum CPU wait-state requirement for zero-wait-state operation. |
| Standby current | 0.05 µA typical at Vcc = 5.5V; enables multi-year battery backup with coin-cell sources. |
| Supply voltage | +5V ±10% (4.5–5.5V); compatible with legacy 5V TTL/CMOS logic families without level shifting. |
| Data retention voltage | Holds valid data down to +2.0V Vcc; allows uninterrupted operation during brown-out or backup switchover. |
| Input compatibility | Direct TTL compatibility: VIH = 2.2V min, VIL = 0.8V max; eliminates need for input buffers in 5V systems. |
| Output drive | IOH = –1 mA (VOH ≥ 2.4V), IOL = 2 mA (VOL ≤ 0.4V); sufficient to drive 10 TTL loads or 50 pF bus capacitance. |
Pinout & Package
Package: 28-pin plastic SOP (450 mil width), outline 28P2W-C, body size 18.4 mm × 7.6 mm × 2.45 mm, lead pitch 1.27 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address inputs | 15-bit address bus; selects one of 32,768 locations; latched on /S or /W edge depending on mode. |
| DQ1–DQ8 | Bi-directional data I/O | Common data bus; high-impedance when /OE = H or /S = H; no external transceivers required. |
| /S | Chip select | Active-low enable; places device in standby (Icc4) when high; enables OR-tie expansion with other SRAMs. |
| /W | Write enable | Active-low write strobe; initiates write on overlap with /S low; latches data on trailing edge of /W or /S. |
| /OE | Output enable | Active-low output control; disables outputs (high-Z) independently of /S, preventing bus contention during writes. |
| Vcc | Power supply | +5V supply pin; powers core and I/O; supports data hold down to +2.0V. |
| GND | Ground | Signal and power reference; decoupling capacitor required near pin 14 for noise immunity. |
Key Features
| Feature | Design Value |
|---|---|
| No clock or refresh required | Asynchronous operation simplifies system timing design and eliminates refresh overhead in microcontroller-based systems. |
| Three-state outputs with OR-tie capability | Enables direct parallel connection of multiple SRAMs on shared data bus without external bus transceivers. |
| Battery backup support to +2.0V | Allows use of small lithium coin cells (e.g., CR2032) to retain memory contents for years during main power loss. |
| Direct TTL compatibility | Eliminates level-shifting components when interfacing with 5V microcontrollers, CPLDs, or legacy logic. |
| Low active supply current | 50 mA max (TTL-level drive) ensures minimal thermal impact and power budget headroom in compact designs. |
Applications
| Industrial PLC Memory Buffer | Medical Device Parameter Storage |
|---|---|
Use Scenario: Storing real-time sensor calibration tables and fault logs in programmable logic controllers with intermittent mains power. IC Role / Device Role / Timing Role: Asynchronous byte-wide SRAM providing non-volatile parameter storage during brown-out events via battery backup. Use Value: Enables >10-year data retention on CR2032 backup without EEPROM wear-out or write latency penalties. | Use Scenario: Holding patient-specific therapy settings and usage history in portable infusion pumps with strict power-down compliance. IC Role / Device Role / Timing Role: Standby-optimized SRAM acting as fast-access configuration memory, retaining critical data at +2.0V during battery-swapping. Use Value: Guarantees zero-data-loss handover between main and backup power sources under IEC 60601-1 safety requirements. |
| Point-of-Sale Terminal Cache | Legacy Industrial HMI Display Buffer |
Use Scenario: Caching transaction receipts and inventory updates in retail terminals where firmware lacks flash write endurance management. IC Role / Device Role / Timing Role: High-reliability, byte-accessible SRAM serving as wear-free intermediate storage before batch flash commits. Use Value: Extends flash lifetime by 100× versus direct flash writes, while maintaining 70 ns read latency for UI responsiveness. | Use Scenario: Frame buffer for monochrome LCD displays in factory-floor HMIs powered by aging 5V linear supplies with ripple. IC Role / Device Role / Timing Role: TTL-compatible, low-noise SRAM delivering stable pixel data to display controllers without clock jitter or refresh artifacts. Use Value: Eliminates visible screen flicker caused by dynamic refresh in DRAM-based alternatives under noisy 5V rails. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 32K × 16 organization, 10 ns access, 3.3V only, 48-pin TSOP; higher density but incompatible bus width and voltage. | Requires PCB redesign for 16-bit data path and 3.3V regulation; unsuitable for 5V-only legacy systems. | Select only if migrating to 3.3V platform and needing wider data bus; not drop-in. |
| AS6C4008-70SCN | 512K × 8 organization, 70 ns access, +5V supply, 28-pin SOP; same pinout and voltage but larger capacity and higher standby current (1 µA). | Drop-in replacement for capacity upgrade; retains identical timing and interface behavior in existing 28-pin footprints. | Preferred for design refresh where board space is constrained but memory depth must increase. |
Compared with IS61LV25616AL-10TLI, M5M5256DFP-70LL#BM offers native 5V operation and 28-pin SOP compatibility but lower density; versus AS6C4008-70SCN, it provides superior standby current (0.05 µA vs. 1 µA) at identical speed and footprint-critical for battery-critical applications.
Availability
M5M5256DFP-70LL#BM is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical device parameter storage, and legacy HMI display buffers requiring stable component supply, long-lifecycle support, and guaranteed traceable sourcing.
Supply support for M5M5256DFP-70LL#BM includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The M5M5256DFP series belongs to Renesas' legacy CMOS SRAM product line, designed specifically for cost-sensitive, low-power, 5V embedded systems requiring reliable asynchronous memory with battery backup capability.
FAQ
What is the maximum operating temperature range for the M5M5256DFP-70LL#BM?
The M5M5256DFP-70LL#BM is rated for operation from 0°C to +70°C, as indicated by the "LL" suffix in its part number. This commercial-grade temperature range is validated per Renesas' DC and AC electrical specifications, including 70 ns access time and 0.05 µA standby current, across the full span. It is not qualified for extended industrial (–40°C to +85°C) operation like the -70LLI variant.
Does the M5M5256DFP-70LL#BM support true battery backup mode with data retention below 5V?
Yes, the M5M5256DFP-70LL#BM supports data retention down to +2.0V Vcc, as specified in its Power Down Characteristics table. When /S is held high and Vcc drops to ≥2.0V, the device enters standby with Icc ≤ 0.05 µA typical, preserving stored data without external circuitry-enabling direct coin-cell backup without regulators or switches.
Can the M5M5256DFP-70LL#BM be used in a /W-controlled write mode only, ignoring /S?
No-the M5M5256DFP-70LL#BM requires /S to be low for any write or read operation. The function table confirms that /S must be low (L) for both Write and Read modes; when /S is high, the device enters Non-selection or Stand-by mode regardless of /W or /OE state. /S is mandatory for chip activation.
What is the pin 1 marking and orientation for the M5M5256DFP-70LL#BM SOP package?
The M5M5256DFP-70LL#BM uses a standard 28-pin plastic SOP (450 mil) with pin 1 located at the top-left corner when the notch or index mark is oriented upward. Pin numbering proceeds counter-clockwise: pin 1 (A14), pin 2 (A12), ..., pin 14 (GND), pin 15 (Vcc), ..., pin 28 (/S). The package outline is designated 28P2W-C per Renesas documentation.
Is the M5M5256DFP-70LL#BM RoHS compliant and lead-free?
Yes, the M5M5256DFP-70LL#BM is RoHS compliant and lead-free, consistent with Renesas' transition to green manufacturing completed prior to 2006. The "#BM" suffix denotes tape-and-reel packaging with Pb-free terminations and halogen-free molding compound, meeting JEDEC J-STD-609 Category 1 requirements.
M5M5256DFP-70LL#BM Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- -
- Memory Format:
- -
- Technology:
- -
- Memory Size:
- -
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
M5M5256DFP-70LL#BM FAQ
1.How can I place an order for M5M5256DFP-70LL#BM through Aetrix?
Please submit a Request for Quotation (RFQ) for M5M5256DFP-70LL#BM on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M5M5256DFP-70LL#BM reliable?
The price and inventory of M5M5256DFP-70LL#BM are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M5M5256DFP-70LL#BM is usually 5 days.
3.What payment methods are accepted for M5M5256DFP-70LL#BM?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M5M5256DFP-70LL#BM transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M5M5256DFP-70LL#BM?
M5M5256DFP-70LL#BM orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M5M5256DFP-70LL#BM order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M5M5256DFP-70LL#BM?
For technical support, including M5M5256DFP-70LL#BM datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M5M5256DFP-70LL#BM requirements.
6.How does Aetrix verify that M5M5256DFP-70LL#BM is sourced from the original manufacturer or authorized distributors?
All M5M5256DFP-70LL#BM products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M5M5256DFP-70LL#BM meets industry standards.
7.What is the process for return or replacement of M5M5256DFP-70LL#BM?
All M5M5256DFP-70LL#BM units undergo pre-shipment inspection (PSI). If there is an issue with M5M5256DFP-70LL#BM, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M5M5256DFP-70LL#BM part is unused and in its original packaging.
Return procedure for M5M5256DFP-70LL#BM:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M5M5256DFP-70LL#BM Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

