Renesas M5M5256DVP-55LL#BE

Overview

M5M5256DVP-55LL#BE from Renesas is a 262,144-bit (32,768-word × 8-bit) CMOS static RAM in a 28-pin TSOP package, operating from a single +5V supply with 55 ns access time, TTL-compatible I/O, and battery-backup capability down to +2.0 V. It serves as main or buffer memory in compact embedded systems requiring low-power standby and simple parallel bus interfacing.

For engineers reviewing the M5M5256DVP-55LL#BE datasheet, M5M5256DVP-55LL#BE pinout, M5M5256DVP-55LL#BE application, or M5M5256DVP-55LL#BE equivalent, key selection criteria include 55 ns read/write timing, 0.05 µA typical standby current at Vcc = 5.5 V, /S-/W-/OE three-control logic, common I/O architecture, and TSOP-28 mechanical compatibility with space-constrained PCB layouts.

Technical Context

This SRAM implements asynchronous parallel interface control via /S (chip select), /W (write enable), and /OE (output enable), supporting both /W-controlled and /S-controlled write cycles. Its resistive-load NMOS cell array with CMOS periphery delivers high density and low power, enabling stable data retention during power-down at ≥2.0 V.

The device operates across 0–70°C, features TTL-level input thresholds (VIH = 2.2 V min, VIL = 0.8 V max), and guarantees output drive strength of VOH ≥ 2.4 V (IOH = −1 mA) and VOL ≤ 0.4 V (IOL = 2 mA), ensuring robust bus interfacing without level-shifting.

Key Specifications

Pinout & Package

Package: 28-pin Thin Small Outline Package (TSOP), 8 mm × 13.4 mm, outline code 28P2C-A - optimized for high-density PCB layouts and automated assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with IS61LV25616AL-10TLI and CY62256ELL-70SNXC, the M5M5256DVP-55LL#BE uniquely balances 55 ns speed, 0.05 µA standby, +5 V operation, and TSOP-28 packaging-making it optimal for space- and power-constrained legacy embedded upgrades.

Availability

M5M5256DVP-55LL#BE is available at Aetrix Electronics and suitable for industrial PLC I/O buffering, portable medical data logging, and legacy POS terminal display caching requiring stable component supply, long-lifecycle support, and RoHS-compliant sourcing.

Supply support for M5M5256DVP-55LL#BE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.

The M5M5256DVP-55LL#BE belongs to Renesas' legacy CMOS SRAM product line, designed specifically for cost-effective, low-power, pin-compatible memory expansion in 5 V microcontroller-based systems.

FAQ

What is the maximum access time guaranteed for M5M5256DVP-55LL#BE?

The M5M5256DVP-55LL#BE guarantees a maximum address access time of 55 ns under standard conditions (Vcc = 5 V ±10%, Ta = 0–70°C). This value is measured from address stabilization to valid data output and applies to both read and write cycles. The -55LL suffix explicitly denotes this 55 ns speed grade, distinguishing it from slower -70LL variants. M5M5256DVP-55LL#BE meets this spec across its full commercial temperature range without derating.

Does M5M5256DVP-55LL#BE support true battery backup operation?

Yes, M5M5256DVP-55LL#BE supports data retention down to +2.0 V Vcc, enabling reliable battery backup operation. When Vcc drops below 4.5 V but remains ≥2.0 V, the device enters low-power standby mode with typical current draw of 0.05 µA at 5.5 V and ≤20 µA at 2.0 V (per datasheet Section 7). External circuitry must hold /S high and maintain Vcc ≥2.0 V during power loss; M5M5256DVP-55LL#BE retains all stored data without refresh.

What are the logic voltage thresholds for /S, /W, and /OE inputs on M5M5256DVP-55LL#BE?

M5M5256DVP-55LL#BE uses TTL-compatible input thresholds: VIH (high-level input voltage) is minimum 2.2 V, and VIL (low-level input voltage) is maximum 0.8 V, referenced to GND. These values ensure direct interfacing with standard 5 V TTL and CMOS microcontrollers without level shifters. Input current remains within ±1 µA across the full input voltage range (0–Vcc), minimizing loading on driving sources.

Can M5M5256DVP-55LL#BE be used in a 3.3 V system?

No, M5M5256DVP-55LL#BE is specified only for +5 V ±10% operation (4.5–5.5 V). Its DC and AC electrical characteristics-including VIH/VIL thresholds, output drive strength, and timing parameters-are validated exclusively at 5 V. Operating at 3.3 V violates absolute maximum ratings and risks data corruption, timing failure, or permanent damage. For 3.3 V systems, consider modern alternatives like ISSI IS61WV25616BLL-10MLI, not M5M5256DVP-55LL#BE.

How does the /OE pin function independently of /S on M5M5256DVP-55LL#BE?

On M5M5256DVP-55LL#BE, /OE (output enable) directly gates the output drivers regardless of /S state. When /OE is high, DQ1–DQ8 enter high-impedance-even if /S is low and the chip is selected-preventing bus contention during write cycles or multi-master arbitration. This independent control allows simultaneous write operations across multiple SRAMs sharing the same data bus, with /OE used for dynamic output gating while /S manages chip selection. M5M5256DVP-55LL#BE's functional table confirms /OE overrides /S for output state.