Renesas M5M5256DVP-70G#BE

Overview

M5M5256DVP-70G#BE from Renesas is a 262,144-bit (32,768 × 8) CMOS static RAM in a 28-pin TSOP package, operating on single +5V supply with TTL-compatible I/O, three-state outputs, and battery backup capability down to +2.0V. It delivers 70 ns access time, 0.05 µA typical standby current, and supports /S-/W-/OE-controlled read/write cycles for embedded memory subsystems.

For engineers reviewing the M5M5256DVP-70G#BE datasheet, M5M5256DVP-70G#BE pinout, M5M5256DVP-70G#BE application, or M5M5256DVP-70G#BE equivalent, key selection criteria include its 70 ns access timing under Vcc = 5V ±10%, low-power standby mode, direct TTL interface compatibility, and TSOP-28 footprint suitability for space-constrained industrial control and legacy system upgrades.

Technical Context

This SRAM uses resistive-load NMOS memory cells with CMOS periphery for high density and low power. Its operation relies on asynchronous control via /S (chip select), /W (write enable), and /OE (output enable), supporting both /W- and /S-controlled write modes with defined setup/hold timing windows.

The device implements common data I/O with OR-tie capability, high-impedance output during non-selection or disabled /OE, and data retention at Vcc ≥ +2.0V-enabling seamless battery backup during power failure without external circuitry.

Key Specifications

Pinout & Package

Package: 28-pin Thin Small Outline Package (TSOP), 8 mm × 13.4 mm, outline 28P2C-A. Lead pitch: 0.55 mm. RoHS-compliant, surface-mount.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with IS61LV25616AL-10TLI and AS6C4008-70ZIN, the M5M5256DVP-70G#BE uniquely combines 5V TTL compatibility, ultra-low standby current, and guaranteed +2.0V data retention-making it irreplaceable in legacy 5V systems requiring robust battery-backed operation without redesign.

Availability

M5M5256DVP-70G#BE is available at Aetrix Electronics and suitable for industrial PLC data buffering, legacy microcontroller co-memory expansion, and medical instrument parameter storage requiring stable component supply and long-lifecycle support.

Supply support for M5M5256DVP-70G#BE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The M5M5256DVP-70G#BE belongs to Renesas' legacy CMOS SRAM product line, designed specifically for cost-sensitive, space-constrained 5V embedded systems requiring zero-refresh, battery-backed memory with minimal external components.

FAQ

What is the maximum access time specification for M5M5256DVP-70G#BE?

The M5M5256DVP-70G#BE has a maximum access time of 70 ns under standard conditions (Vcc = 5V ±10%, Ta = 25°C). This value is measured from address valid to data valid (ta(A)) and applies to both read and write-enable timing windows. The "-70" suffix explicitly denotes this 70 ns speed grade, distinguishing it from faster -55 variants.

Does M5M5256DVP-70G#BE support true battery backup operation?

Yes, the M5M5256DVP-70G#BE supports data retention at supply voltages as low as +2.0V, enabling direct connection to backup batteries (e.g., lithium coin cells) without regulators or supervisors. During power failure, the device enters standby mode with ≤40 µA current draw, preserving stored data indefinitely as long as Vcc remains ≥+2.0V.

Is M5M5256DVP-70G#BE pin-compatible with other variants in the M5M5256D family?

Yes, all M5M5256D variants-including M5M5256DFP and M5M5256DVP-share identical 28-pin pinouts and signal assignments. The FP variant uses 450-mil SOP while VP uses TSOP, but pin functions (A0–A14, DQ1–DQ8, /S, /W, /OE, Vcc, GND) are electrically and physically aligned, allowing direct PCB footprint reuse between packages where mechanical constraints permit.

What logic family is M5M5256DVP-70G#BE compatible with?

The M5M5256DVP-70G#BE is directly TTL-compatible: its input thresholds meet VIH ≥ 2.2V and VIL ≤ 0.8V, and its outputs drive VOH ≥ 2.4V (at IOH = –1 mA) and VOL ≤ 0.4V (at IOL = 2 mA). This allows seamless interfacing with 74LS, 74ALS, and standard 5V microcontrollers without level-shifting circuitry.

Can M5M5256DVP-70G#BE be used in write-cycle modes controlled by either /S or /W?

Yes, the M5M5256DVP-70G#BE supports two distinct write modes: /W-controlled (where /W low overlapping /S low initiates write) and /S-controlled (where /S low overlapping /W low initiates write). Both modes are fully specified in the function table and timing diagrams, and require adherence to respective setup/hold times for address, data, and control signals.