Renesas M5M5256DVP-70GI#BE

Overview

M5M5256DVP-70GI#BE from Renesas is a 262,144-bit (32,768 × 8) CMOS static RAM in a 28-pin TSOP package, operating from a single +5V supply with 70 ns access time, TTL-compatible I/O, and battery backup support down to +2.0 V. It serves as main or buffer memory in compact embedded controllers requiring low-power standby operation and simple parallel bus interfacing.

For engineers reviewing the M5M5256DVP-70GI#BE datasheet, M5M5256DVP-70GI#BE pinout, M5M5256DVP-70GI#BE application, or M5M5256DVP-70GI#BE equivalent, key selection criteria include its 70 ns /S-controlled read cycle, 0.05 µA typical standby current at Vcc = 5.5 V, three-state OR-tie capable outputs, and direct compatibility with 5 V TTL logic families without level shifting.

Technical Context

This SRAM implements a resistive-load NMOS memory cell array with CMOS periphery for high density and low power. Its control logic responds to /S (chip select), /W (write enable), and /OE (output enable) to define non-selection, read, write, and standby modes - with data hold guaranteed at Vcc ≥ +2.0 V during power loss.

The device uses a 15-bit address bus (A0–A14) and 8-bit bidirectional data bus (DQ1–DQ8), with all inputs meeting TTL voltage thresholds (VIH = 2.4 V min, VIL = 0.8 V max) and outputs driving ±2 mA loads while maintaining VOH ≥ 2.4 V and VOL ≤ 0.4 V under specified conditions.

Key Specifications

Pinout & Package

Package: 28-pin Thin Small Outline Package (TSOP), outline 28P2C-A, dimensions 8 mm × 13.4 mm, surface-mount compatible with standard reflow profiles.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with IS61LV25616AL-70TLI and AS6C4008-70ZIN, the M5M5256DVP-70GI#BE offers native 5 V TTL compatibility and TSOP packaging optimized for compact 5 V embedded systems - avoiding voltage translation or mechanical redesign.

Availability

M5M5256DVP-70GI#BE is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical data loggers, point-of-sale terminal caches, and automotive infotainment boot loader storage requiring stable component supply and long-term lifecycle support.

Supply support for M5M5256DVP-70GI#BE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.

The M5M5256DVP-70GI#BE belongs to Renesas' legacy CMOS SRAM product line designed for cost-sensitive, space-constrained embedded systems requiring simple, robust, and low-power volatile memory without refresh overhead.

FAQ

What is the maximum operating frequency supported by the M5M5256DVP-70GI#BE?

The M5M5256DVP-70GI#BE does not operate on a clock signal - it is an asynchronous static RAM. Its 70 ns access time corresponds to a maximum effective bus frequency of approximately 14 MHz in read cycles, assuming no wait states. The device relies solely on /S, /W, and /OE timing rather than a system clock, making it suitable for microcontroller and FPGA interfaces without synchronous timing constraints. M5M5256DVP-70GI#BE performance is governed by AC timing parameters such as t_CR and t_a(S), not clock frequency.

Does the M5M5256DVP-70GI#BE require external refresh circuitry?

No, the M5M5256DVP-70GI#BE is a true static RAM and requires no external refresh circuitry or periodic access to retain data. Its resistive-load NMOS cell design maintains state indefinitely as long as Vcc remains ≥ +2.0 V. This eliminates refresh overhead in software or hardware, simplifying system design for microcontrollers lacking dedicated DRAM controllers. M5M5256DVP-70GI#BE retains data in standby mode with only 0.05 µA typical current draw.

Can the M5M5256DVP-70GI#BE be used with a 3.3 V microcontroller interface?

The M5M5256DVP-70GI#BE is specified for +5 V ±10% operation and TTL-compatible I/O thresholds (VIH = 2.4 V min, VIL = 0.8 V max). While some 3.3 V microcontrollers may drive it reliably, Renesas does not guarantee operation below Vcc = 4.5 V. For guaranteed interoperability with 3.3 V logic, level-shifting circuitry or a 3.3 V–compatible SRAM like IS61LV25616AL-70TLI is recommended. M5M5256DVP-70GI#BE is intended for 5 V systems.

What is the meaning of "-70GI#BE" in the part number M5M5256DVP-70GI#BE?

In M5M5256DVP-70GI#BE, "-70" denotes 70 ns access time, "G" indicates green (lead-free) compliance, "I" specifies industrial temperature range (–40 °C to +85 °C), and "#BE" signifies tape-and-reel packaging per JEDEC standard. Although the primary datasheet lists "0~70°C" for -70LL variants, Renesas documentation confirms the -70GI suffix applies the extended –40 °C to +85 °C range. M5M5256DVP-70GI#BE thus supports wider thermal environments than standard commercial versions.

How does the /S pin function during power-down in the M5M5256DVP-70GI#BE?

When /S is driven high, the M5M5256DVP-70GI#BE enters standby mode with supply current reduced to ≤ 0.05 µA typical. In this state, outputs go high-impedance, internal logic halts, and data is retained as long as Vcc remains ≥ +2.0 V - enabling battery backup operation. The /S pin also controls power-down recovery timing: t_rec(PD) is 2.2 ns max, ensuring rapid resumption of normal operation upon /S assertion. M5M5256DVP-70GI#BE uses /S as the primary power-state control signal.