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Renesas M5M5256DVP-70GI#SE

Part No.:
M5M5256DVP-70GI#SE
Manufacturer:
Renesas
Category:
Memory
Package:
-
Datasheet:
AetrixM5M5256DVP-70GI#SE.pdf
Description:
STANDARD SRAM, 32KX8
Quantity:
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Payment
Shipping:
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Inventory:2,000

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Product details

Overview

M5M5256DVP-70GI#SE from Renesas is a 262,144-bit (32,768-word × 8-bit) CMOS static RAM in a 28-pin TSOP package, operating on single +5V supply with TTL-compatible I/O, three-state outputs, and battery backup capability down to +2.0V. It delivers 70 ns access time, 0.05 µA typical standby current, and supports /S-/W-/OE-controlled read/write cycles for embedded memory subsystems.

For engineers reviewing the M5M5256DVP-70GI#SE datasheet, M5M5256DVP-70GI#SE pinout, M5M5256DVP-70GI#SE application, or M5M5256DVP-70GI#SE equivalent, key selection criteria include its 70 ns access timing under 5V operation, low-power standby mode for battery-backed systems, direct TTL interface compatibility, and TSOP-28 footprint suitability for space-constrained industrial control and legacy microcontroller memory expansion.

Technical Context

This SRAM implements asynchronous, non-multiplexed address/data architecture with independent chip select (/S), write enable (/W), and output enable (/OE) controls. Its operation relies on overlapping /S and /W low states for write cycles and /W high + /OE low + /S low for read cycles - no clocks or refresh required.

The device uses resistive-load NMOS memory cells with CMOS periphery, enabling high density and low power. Data retention at Vcc ≥ +2.0V enables reliable battery backup during power loss, while OR-tie capability via three-state outputs supports memory expansion without bus contention.

Key Specifications

Parameter Value and Actual Design Meaning
Memory size 262,144-bit (32,768 × 8-bit) - supports byte-wide data bus interfacing with 8-bit microcontrollers and peripherals.
Access time 70 ns max at Vcc = 5V ±10% - defines minimum read cycle time for deterministic timing in real-time control loops.
Standby current 0.05 µA typical at Vcc = 5.5V - enables multi-year battery backup in power-critical applications like metering and RTC buffers.
Supply voltage +5V ±10% - compatible with standard TTL/CMOS logic rails; no auxiliary supplies needed.
Data retention voltage +2.0V minimum - ensures data integrity during brown-out or battery-only operation without external hold circuitry.
Input/output compatibility TTL-level inputs and outputs - eliminates level-shifting requirements when interfacing with legacy 5V MCUs and FPGAs.
Operating temperature 0°C to +70°C - qualified for commercial-grade industrial equipment and consumer electronics.

Pinout & Package

Package: 28-pin Thin Small Outline Package (TSOP), 8 mm × 13.4 mm, outline 28P2C-A. Lead pitch: 0.55 mm. RoHS-compliant, surface-mount.

Pin/Terminal Circuit Role Design Meaning
A0–A14 Address inputs 15-bit address bus supporting full 32,768-word addressing; no multiplexing required.
DQ1–DQ8 Bi-directional data I/O Common data bus pins with three-state output control; enables shared bus topology with /OE and /S coordination.
/S Chip select input Active-low enable; places device in high-impedance state when high, reducing bus contention and standby current.
/W Write enable input Active-low write control; latches data on trailing edge of /W or /S, whichever occurs first.
/OE Output enable input Directly gates output drivers; high = high-Z, eliminating read/write bus conflicts without external logic.
Vcc Power supply +5V supply pin; powers core and I/O; supports data retention down to +2.0V.
GND Ground reference Signal and power ground; decoupling recommended near pin 14 for noise immunity.

Key Features

Feature Design Value
No clock or refresh required Enables plug-and-play integration into simple microcontroller systems without timing controller overhead or periodic refresh interrupts.
Three-state outputs with OR-tie capability Allows multiple SRAMs to share a common data bus without external bus transceivers or arbitration logic.
Battery backup support (≥+2.0V) Eliminates need for external backup controllers or supercapacitor charge management circuits in fail-safe memory applications.
Direct TTL compatibility Permits direct connection to 5V MCU GPIOs, CPLDs, and legacy logic families without level shifters or pull-up resistors.
Low active supply current (≤50 mA) Reduces thermal load and power supply sizing requirements in compact embedded modules with limited cooling.

Applications

Industrial PLC Memory Buffer Legacy Microcontroller External RAM

Use Scenario: Storing runtime variables and configuration data in programmable logic controllers during mains power interruption.

IC Role / Device Role / Timing Role: Asynchronous byte-wide SRAM providing non-refreshed, battery-backed data storage with deterministic 70 ns read access.

Use Value: Ensures uninterrupted data retention during brown-out events using only +2.0V supply, avoiding firmware corruption or state loss.

Use Scenario: Expanding RAM capacity for 8-bit microcontrollers (e.g., 8051, Z80) in test equipment and instrumentation.

IC Role / Device Role / Timing Role: Standalone parallel SRAM interfaced directly to MCU address/data bus with /S, /W, and /OE handshaking.

Use Value: Delivers TTL-compatible, pin-simple memory extension without wait-state generation or external glue logic.

Smart Meter Data Logging Embedded HMI Display Buffer

Use Scenario: Capturing energy consumption snapshots at fixed intervals in utility meters with long battery life requirements.

IC Role / Device Role / Timing Role: Low-power static RAM holding timestamped logs between wake-ups; retains data at +2.0V during sleep.

Use Value: Achieves >10-year battery life by drawing only 0.05 µA in standby, eliminating periodic refresh current spikes.

Use Scenario: Serving as frame buffer for monochrome LCD or LED segment displays in medical or industrial HMIs.

IC Role / Device Role / Timing Role: Byte-accessible memory mapped to display controller address space for fast pixel updates.

Use Value: Enables flicker-free screen refresh via burst reads at 70 ns latency, synchronized to display controller timing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IS61LV25616AL-10TLI 256K×16 organization, 10 ns access, 3.3V supply only - not pin-compatible; requires PCB redesign and level translation. Higher density and speed but incompatible voltage and bus width; suited for modern 3.3V systems, not 5V legacy designs. Select only if migrating to 3.3V architecture and requiring wider data bus; not drop-in for M5M5256DVP-70GI#SE.
AS6C4008-70PCN 512K×8 organization, 70 ns access, +5V supply, 28-pin SOJ - same voltage and timing, but different pinout and package (SOJ vs TSOP). Same functional role and timing, but SOJ package requires retooling for reflow or wave soldering; no battery backup spec below +2.5V. Consider for new designs where SOJ is preferred and battery backup is not required; not mechanically interchangeable.

Compared with IS61LV25616AL-10TLI and AS6C4008-70PCN, the M5M5256DVP-70GI#SE uniquely combines 5V TTL compatibility, TSOP-28 footprint, and guaranteed +2.0V data retention - making it irreplaceable in cost-sensitive, battery-backed 5V industrial systems where layout and voltage stability are fixed constraints.

Availability

M5M5256DVP-70GI#SE is available at Aetrix Electronics and suitable for industrial PLC memory buffers, legacy microcontroller external RAM expansion, and smart meter data logging requiring stable component supply across extended production lifecycles.

Supply support for M5M5256DVP-70GI#SE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The M5M5256DVP-70GI#SE belongs to Renesas' legacy CMOS SRAM product line, designed specifically for cost-effective, low-power, battery-backed memory in 5V embedded systems requiring zero-refresh operation and TTL interoperability.

FAQ

What is the maximum access time specification for M5M5256DVP-70GI#SE?

The M5M5256DVP-70GI#SE has a maximum access time of 70 ns at Vcc = 5V ±10%, measured from address valid to data valid under specified load conditions (CL = 100 pF). This value is guaranteed across the full commercial temperature range (0°C to +70°C) and defines the minimum read cycle interval for deterministic system timing.

Does M5M5256DVP-70GI#SE support battery backup operation?

Yes, the M5M5256DVP-70GI#SE supports data retention down to +2.0V supply voltage, enabling reliable battery backup during main power failure. At Vcc ≥ +2.0V, the device maintains stored data with standby current as low as 0.05 µA typical - a key feature confirmed in Renesas' Power Down Characteristics section.

Is M5M5256DVP-70GI#SE pin-compatible with other variants in the M5M5256DFP/VP family?

Yes, all M5M5256DFP/VP variants - including M5M5256DVP-70GI#SE, -70LL, and -70LLI - share identical 28-pin TSOP pinouts and electrical pin functions. Differences are limited to timing grade (-70 vs -55), temperature range (0–70°C vs -40–85°C), and packaging suffix (GI#SE denotes lead-free TSOP with tape-and-reel).

What are the logic voltage levels for /S, /W, and /OE inputs on M5M5256DVP-70GI#SE?

The M5M5256DVP-70GI#SE uses standard TTL-compatible input thresholds: VIH = 2.2V min and VIL = 0.8V max at Vcc = 5V. These values ensure direct interfacing with 5V microcontrollers and logic families without level shifting, and are verified in the DC Electrical Characteristics table of the official Renesas datasheet.

Can M5M5256DVP-70GI#SE be used in systems requiring OR-tied memory buses?

Yes, the M5M5256DVP-70GI#SE supports OR-tie capability through its three-state outputs controlled by /OE and /S. When either control signal is high, outputs enter high-impedance state - allowing multiple devices to share a common data bus without contention, as explicitly stated in the Features and Function Table sections.

M5M5256DVP-70GI#SE Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
-
Memory Format:
-
Technology:
-
Memory Size:
-
Memory Organization:
-
Memory Interface:
-
Clock Frequency:
-
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

M5M5256DVP-70GI#SE FAQ

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The price and inventory of M5M5256DVP-70GI#SE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M5M5256DVP-70GI#SE is usually 5 days.

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5.How can I obtain technical support or documentation for M5M5256DVP-70GI#SE?

For technical support, including M5M5256DVP-70GI#SE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M5M5256DVP-70GI#SE requirements.

6.How does Aetrix verify that M5M5256DVP-70GI#SE is sourced from the original manufacturer or authorized distributors?

All M5M5256DVP-70GI#SE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M5M5256DVP-70GI#SE meets industry standards.

7.What is the process for return or replacement of M5M5256DVP-70GI#SE?

All M5M5256DVP-70GI#SE units undergo pre-shipment inspection (PSI). If there is an issue with M5M5256DVP-70GI#SE, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The M5M5256DVP-70GI#SE part is unused and in its original packaging.

Return procedure for M5M5256DVP-70GI#SE:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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