My Inquiry
My Account
Renesas M5M5256DVP-70G#SE
- Part No.:
- M5M5256DVP-70G#SE
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- -
- Datasheet:
-
M5M5256DVP-70G#SE.pdf
- Description:
- STANDARD SRAM, 32KX8
- Quantity:
- Payment:
- Shipping:
Inventory:59,973
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
M5M5256DVP-70G#SE from Renesas is a 262,144-bit (32,768 × 8) CMOS static RAM in a 28-pin TSOP package, operating from a single +5V supply with 70 ns access time, TTL-compatible I/O, and battery-backup capability down to +2.0V. It serves as main memory or buffer in embedded controllers, industrial PLCs, and legacy instrumentation requiring low-power standby and simple parallel bus interfacing.
For engineers reviewing the M5M5256DVP-70G#SE datasheet, M5M5256DVP-70G#SE pinout, M5M5256DVP-70G#SE application, or M5M5256DVP-70G#SE equivalent, key selection criteria include its 70 ns /S-controlled read cycle, 0.05 µA typical standby current at Vcc = 5.5 V, three-state DQ outputs with /OE control, and TSOP-28 footprint compatibility with legacy 28-pin SRAM designs.
Technical Context
This SRAM uses resistive-load NMOS memory cells with CMOS periphery for high density and low power. Its operation relies on asynchronous control via /S (chip select), /W (write enable), and /OE (output enable), supporting both /W- and /S-controlled write cycles per the function table.
The device implements a 15-bit address bus (A0–A14) for 32,768-word addressing, common I/O pins (DQ1–DQ8), and data hold functionality at Vcc ≥ +2.0V - enabling seamless battery backup during main power loss without external circuitry.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 262,144-bit (32,768 words × 8 bits); supports byte-wide parallel data transfers without width conversion logic. |
| Access time | 70 ns max (tCR, /S active); ensures compatibility with 14 MHz bus timing in microcontroller-based systems. |
| Standby current | 0.05 µA typical at Vcc = 5.5 V; enables multi-year battery backup in power-critical applications like metering and RTC buffers. |
| Supply voltage | +5 V ±10%; operates directly from standard TTL/CMOS logic rails without regulation or level shifting. |
| I/O compatibility | Direct TTL input/output levels (VIH = 2.2 V min, VOL = 0.4 V max at IOL = 2 mA); eliminates need for bus interface translators. |
| Data retention | Held at Vcc ≥ +2.0 V; allows use of coin-cell batteries (e.g., CR2032) for nonvolatile data preservation during AC failure. |
Pinout & Package
Package: 28-pin Thin Small Outline Package (TSOP), outline 28P2C-A, 8 mm × 13.4 mm body, 0.55 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address inputs | 15-bit unidirectional address bus; fully decoded to select one of 32,768 memory locations. |
| DQ1–DQ8 | Bi-directional data I/O | Common data bus pins; high-impedance when /OE = H or /S = H, enabling OR-tie expansion. |
| /S | Chip select | Active-low enable; places device in standby (Icc ≤ 40 µA) when high, disabling all internal activity. |
| /W | Write enable | Active-low write strobe; latches data on trailing edge relative to /S or /W, whichever occurs first. |
| /OE | Output enable | Active-low output gate; isolates DQ bus during writes or chip deselection to prevent contention. |
| Vcc | Power supply | +5 V ±10% primary supply; powers core and I/O; supports data hold down to +2.0 V. |
| GND | Ground reference | Signal and power ground return; decoupling capacitor required near Pin 14 for noise immunity. |
Key Features
| Feature | Design Value |
|---|---|
| No clock or refresh required | Asynchronous operation eliminates timing controller overhead and simplifies integration into FPGA or MCU glue logic. |
| Three-state outputs with /OE | Enables direct connection to shared data buses without external transceivers or bus switches. |
| Battery backup support | Retains data at Vcc ≥ +2.0 V, allowing use of low-cost primary cells for fail-safe memory preservation. |
| TTL-compatible I/O | Accepts and drives standard 5 V TTL logic levels, removing need for level-shifting components in mixed-logic systems. |
| Low active current | 50 mA max (Icc1) at 70 ns access ensures thermal stability in compact enclosures without forced cooling. |
Applications
| Industrial Data Logger | Legacy CNC Controller Memory |
|---|---|
Use Scenario: Captures sensor readings during mains outage using onboard coin-cell backup. IC Role / Device Role / Timing Role: Nonvolatile buffer storing timestamped analog-to-digital conversion results prior to upload. Use Value: 0.05 µA standby current extends CR2032 life beyond 5 years while preserving up to 32 KB of critical process data. | Use Scenario: Holds G-code instruction cache and axis position history in retrofit machine tools. IC Role / Device Role / Timing Role: Byte-accessible scratchpad memory mapped to 8086/80186 CPU address space. Use Value: 70 ns access time meets 14 MHz bus timing requirements without wait states, maintaining real-time motion control loop integrity. |
| Medical Infusion Pump Display Buffer | Point-of-Sale Terminal EEPROM Shadow RAM |
Use Scenario: Stores display frame buffer and alarm history during brief AC interruptions. IC Role / Device Role / Timing Role: Dedicated video RAM interfaced to HD44780-compatible controller with /OE-gated updates. Use Value: Direct TTL compatibility eliminates level shifters, reducing BOM count and board area in Class II medical devices. | Use Scenario: Caches frequently accessed configuration tables to accelerate boot and transaction processing. IC Role / Device Role / Timing Role: High-speed shadow RAM mirroring slow EEPROM contents for zero-latency reads. Use Value: OR-tie capability allows seamless expansion to 64 KB using two M5M5256DVP-70G#SE devices sharing /OE and /W lines. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 3.3 V only, 10 ns faster (10 ns access), 256K × 16 organization | Requires voltage translation and data-width adaptation for 8-bit bus systems | Select only if migrating to 3.3 V design and needing higher bandwidth; not drop-in compatible. |
| AS6C4008-70ZIN | 5 V tolerant, 70 ns access, same 32K × 8 organization and TSOP-28 package | Identical pinout and DC/AC specs; supports same battery-backup voltage range (+2.0 V) | Valid pin-compatible alternative with identical layout and firmware integration path. |
Compared with IS61LV25616AL-10TLI and AS6C4008-70ZIN, the M5M5256DVP-70G#SE offers proven 5 V system compatibility, minimal layout change risk, and long-term industrial temperature support (0–70°C), making it optimal for cost-sensitive, legacy-compliant designs where 3.3 V migration is not planned.
Availability
M5M5256DVP-70G#SE is available at Aetrix Electronics and suitable for industrial data loggers, legacy CNC controllers, and medical infusion pump display buffers requiring stable component supply across extended product lifecycles.
Supply support for M5M5256DVP-70G#SE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The M5M5256DVP-70G#SE belongs to Renesas' legacy CMOS SRAM product line, designed specifically for cost-effective, low-power, pin-compatible replacements in 5 V embedded systems requiring reliable byte-wide memory with battery backup.
FAQ
What is the maximum operating temperature range for the M5M5256DVP-70G#SE?
The M5M5256DVP-70G#SE is rated for operation from 0°C to +70°C, as confirmed by the "-70" suffix and the "-70LL" variant designation in Renesas documentation. This commercial-grade temperature range aligns with typical industrial control and instrumentation environments where ambient heat buildup is moderate and controlled.
Does the M5M5256DVP-70G#SE support true battery backup mode?
Yes, the M5M5256DVP-70G#SE supports true battery backup: data retention is guaranteed at Vcc ≥ +2.0 V, and standby current drops to just 0.05 µA typical at Vcc = 5.5 V. This enables direct connection to a CR2032 or similar primary cell to preserve memory contents indefinitely during main power loss - no external power-switching circuitry is needed.
Is the M5M5256DVP-70G#SE pin-compatible with other 28-pin SRAMs like the HM62256?
No - while both are 32K × 8 SRAMs in 28-pin packages, the M5M5256DVP-70G#SE uses a unique pinout optimized for Renesas' /S-/W-/OE control architecture. For example, Pin 22 is /OE on M5M5256DVP-70G#SE but A12 on HM62256. Layout reuse requires verification against the official Renesas pin diagram; direct substitution without board revision is not supported.
What is the minimum /W pulse width required for reliable writes on the M5M5256DVP-70G#SE?
The minimum /W pulse width for the M5M5256DVP-70G#SE is 40 ns (tw(W)) under -70LL conditions, as specified in the AC Electrical Characteristics table. This ensures sufficient time for internal write latching on the trailing edge of /W or /S - whichever occurs first - and must be met alongside address setup (tsu(A) = 0 ns) and data hold (th(D) = 0 ns) timing constraints.
Can the M5M5256DVP-70G#SE be used in a 3.3 V system?
No - the M5M5256DVP-70G#SE is strictly a +5 V ±10% device. Its absolute maximum ratings cap VI at Vcc + 0.3 V, and DC characteristics (e.g., VIH = 2.2 V min) assume Vcc = 5 V. Operating at 3.3 V violates specification and risks unreliable read/write behavior or data corruption; a 3.3 V–rated SRAM such as AS6C4008-70ZIN should be selected instead.
M5M5256DVP-70G#SE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- -
- Memory Format:
- -
- Technology:
- -
- Memory Size:
- -
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
M5M5256DVP-70G#SE FAQ
1.How can I place an order for M5M5256DVP-70G#SE through Aetrix?
Please submit a Request for Quotation (RFQ) for M5M5256DVP-70G#SE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M5M5256DVP-70G#SE reliable?
The price and inventory of M5M5256DVP-70G#SE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M5M5256DVP-70G#SE is usually 5 days.
3.What payment methods are accepted for M5M5256DVP-70G#SE?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M5M5256DVP-70G#SE transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M5M5256DVP-70G#SE?
M5M5256DVP-70G#SE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M5M5256DVP-70G#SE order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M5M5256DVP-70G#SE?
For technical support, including M5M5256DVP-70G#SE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M5M5256DVP-70G#SE requirements.
6.How does Aetrix verify that M5M5256DVP-70G#SE is sourced from the original manufacturer or authorized distributors?
All M5M5256DVP-70G#SE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M5M5256DVP-70G#SE meets industry standards.
7.What is the process for return or replacement of M5M5256DVP-70G#SE?
All M5M5256DVP-70G#SE units undergo pre-shipment inspection (PSI). If there is an issue with M5M5256DVP-70G#SE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M5M5256DVP-70G#SE part is unused and in its original packaging.
Return procedure for M5M5256DVP-70G#SE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M5M5256DVP-70G#SE Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
