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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas M5M5256DVP-70LL#BE

Name: M5M5256DVP-70LL#BE
Brand: Renesas
SKU: M5M5256DVP-70LL#BE
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: M5M5256DVP-70LL#BE

Manufacturer:: Renesas

Category:: Memory

Package:: -

Datasheet:: M5M5256DVP-70LL#BE.pdf

Description:: STANDARD SRAM, 32KX8

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Product details

Overview

M5M5256DVP-70LL#BE from Renesas is a 262,144-bit (32,768 × 8) CMOS static RAM in a 28-pin TSOP package, operating from a single +5V supply with TTL-compatible I/O, three-state outputs, and battery backup capability down to +2.0V. It delivers 70 ns access time, 0.05 µA typical standby current, and supports non-volatile data retention during power failure-ideal for compact embedded memory subsystems requiring low-power hold mode.

For engineers reviewing the M5M5256DVP-70LL#BE datasheet, M5M5256DVP-70LL#BE pinout, M5M5256DVP-70LL#BE application, or M5M5256DVP-70LL#BE equivalent, key selection criteria include its 70 ns read cycle time, /S-/W-/OE control logic, 28-pin TSOP-28 (8 × 13.4 mm) footprint, and verified compatibility with legacy 8-bit microcontroller buses in industrial control and instrumentation designs.

Technical Context

This SRAM implements asynchronous operation with dual control modes: /S-/W overlap enables write cycles, while /OE directly gates output drivers to prevent bus contention. Its resistive-load NMOS cell array paired with CMOS periphery achieves high density and ultra-low standby current-critical for battery-backed systems.

The device supports full TTL-level interfacing (VIH = 2.2 V min, VIL = 0.8 V max), operates across 0–70°C, and maintains data integrity at Vcc ≥ 2.0 V in standby-enabling seamless transition to backup power without external circuitry.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory size	262,144-bit (32,768 words × 8 bits)-supports byte-wide data paths in 8-bit MCU systems.
Access time	70 ns max (t_CR)-compatible with 14 MHz bus timing in legacy controllers.
Standby current	0.05 µA typical at Vcc = 5.5 V-enables multi-year battery backup with coin cells.
Supply voltage	+5 V ±10%-directly interfaces with standard TTL/CMOS logic rails.
Data retention voltage	Holds data down to +2.0 V-no external voltage supervisor needed for brown-out recovery.
Operating temperature	0°C to +70°C-qualified for commercial-grade industrial control modules.
Input compatibility	TTL-level inputs (VIH ≥ 2.2 V, VIL ≤ 0.8 V)-no level-shifting required with 5 V microcontrollers.

Pinout & Package

Package: 28-pin Thin Small Outline Package (TSOP-28), 8 mm × 13.4 mm body, 1.2 mm height, 0.55 mm lead pitch (Outline 28P2C-A).

Pin/Terminal	Circuit Role	Design Meaning
A0–A14	Address inputs	15-bit address bus supporting 32,768-word addressing; no internal latching-requires stable address during /S low.
DQ1–DQ8	Bi-directional data I/O	Common data bus with three-state outputs; OR-tie capable when /OE = high.
/S	Chip select	Active-low enable; high state places device in standby with 0.05 µA current and data hold at ≥2.0 V.
/W	Write enable	Active-low write strobe; write occurs on overlap of /W and /S low; data latched on trailing edge of either signal.
/OE	Output enable	Directly controls output buffer; high = high-impedance (prevents bus contention during writes).
Vcc	Power supply	+5 V ±10% supply; powers core and I/O; supports data retention down to +2.0 V in standby.
GND	Ground reference	Signal and power ground; decoupling capacitor required within 10 mm of Vcc pin.

Key Features

Feature	Design Value
No clock or refresh required	Asynchronous interface eliminates timing controller overhead and simplifies FPGA/CPU integration.
Battery backup support	Retains data at Vcc ≥ 2.0 V-enables direct connection to backup lithium cell without diode or regulator.
Three-state outputs with /OE	Eliminates need for external bus transceivers in multi-chip memory expansions.
TTL-compatible I/O	Direct connection to 5 V microcontrollers (e.g., 8051, Z80) without level shifters or pull-ups.
Low active current	50 mA max during read/write-reduces thermal load in dense PCB layouts.

Applications

Industrial PLC Data Buffer	Medical Instrument Parameter Storage
Use Scenario: Storing real-time sensor calibration coefficients and runtime configuration in programmable logic controllers with intermittent power. IC Role / Device Role / Timing Role: Non-volatile SRAM buffer holding critical settings during AC dropout; accessed via 8-bit parallel bus at ≤14 MHz. Use Value: 0.05 µA standby current extends CR2032 battery life beyond 5 years; 2.0 V data retention avoids external supervisor ICs.	Use Scenario: Retaining patient-specific therapy parameters and error logs in portable infusion pumps during battery swaps. IC Role / Device Role / Timing Role: Battery-backed memory node interfaced to an 8-bit MCU; survives 100+ power cycles without data loss. Use Value: Direct +2.0 V hold capability eliminates diode-drop losses and ensures reliable retention during hot-swap transitions.
Point-of-Sale Terminal EEPROM Emulation	Legacy Communication Module Configuration
Use Scenario: Emulating EEPROM write endurance in retail terminals by using SRAM + backup cap, avoiding wear-out limitations. IC Role / Device Role / Timing Role: Byte-addressable parallel memory mapped into MCU address space; written on power-down interrupt. Use Value: 70 ns access enables sub-100 ns effective write latency when combined with fast power-fail detection circuitry.	Use Scenario: Storing protocol stack configuration (e.g., Modbus register map, baud rate) in RS-485 field devices deployed in harsh environments. IC Role / Device Role / Timing Role: Static configuration store accessed only at boot; held through wide temperature range (0–70°C). Use Value: TSOP-28 package allows compact layout on 2-layer boards; TTL compatibility ensures robust noise immunity on long traces.

Industrial PLC Data Buffer

Medical Instrument Parameter Storage

Use Scenario: Storing real-time sensor calibration coefficients and runtime configuration in programmable logic controllers with intermittent power.

IC Role / Device Role / Timing Role: Non-volatile SRAM buffer holding critical settings during AC dropout; accessed via 8-bit parallel bus at ≤14 MHz.

Use Value: 0.05 µA standby current extends CR2032 battery life beyond 5 years; 2.0 V data retention avoids external supervisor ICs.

Use Scenario: Retaining patient-specific therapy parameters and error logs in portable infusion pumps during battery swaps.

IC Role / Device Role / Timing Role: Battery-backed memory node interfaced to an 8-bit MCU; survives 100+ power cycles without data loss.

Use Value: Direct +2.0 V hold capability eliminates diode-drop losses and ensures reliable retention during hot-swap transitions.

Point-of-Sale Terminal EEPROM Emulation

Legacy Communication Module Configuration

Use Scenario: Emulating EEPROM write endurance in retail terminals by using SRAM + backup cap, avoiding wear-out limitations.

IC Role / Device Role / Timing Role: Byte-addressable parallel memory mapped into MCU address space; written on power-down interrupt.

Use Value: 70 ns access enables sub-100 ns effective write latency when combined with fast power-fail detection circuitry.

Use Scenario: Storing protocol stack configuration (e.g., Modbus register map, baud rate) in RS-485 field devices deployed in harsh environments.

IC Role / Device Role / Timing Role: Static configuration store accessed only at boot; held through wide temperature range (0–70°C).

Use Value: TSOP-28 package allows compact layout on 2-layer boards; TTL compatibility ensures robust noise immunity on long traces.

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IS61LV25616AL-70TQLI	16-bit bus, 512 Kbit (64K × 8), 70 ns, 3.3 V supply only	Requires level translation for 5 V systems; higher density but incompatible voltage domain	Select only if migrating to 3.3 V architecture and needing wider data path.
AS6C4008-70PCN	5 V supply, 4 Mbit (512K × 8), 70 ns, 28-pin SOJ (not TSOP)	Larger capacity but different package footprint and pinout; not drop-in replaceable	Choose for higher memory depth where board rework is acceptable and SOJ mounting is supported.

Compared with IS61LV25616AL-70TQLI and AS6C4008-70PCN, the M5M5256DVP-70LL#BE uniquely combines 5 V TTL compatibility, TSOP-28 footprint, and +2.0 V data retention-making it irreplaceable in cost-sensitive, battery-backed 8-bit designs where voltage translation or PCB redesign is prohibited.

Availability

M5M5256DVP-70LL#BE is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical instrument parameter storage, and legacy communication module configuration requiring stable component supply, long-lifecycle availability, and guaranteed traceable sourcing.

Supply support for M5M5256DVP-70LL#BE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and enterprise applications.

The M5M5256DVP-70LL#BE belongs to Renesas' legacy CMOS SRAM product line, designed specifically for cost-effective, low-power, byte-wide memory expansion in 5 V embedded systems with battery backup requirements.

FAQ

What is the maximum access time specification for the M5M5256DVP-70LL#BE?

The M5M5256DVP-70LL#BE has a maximum read cycle time (t_CR) of 70 ns under standard conditions (Vcc = 5 V ±10%, T_A = 0–70°C). This value is measured with /S and /OE active low, CL = 100 pF, and input rise/fall times ≤5 ns. The device meets this spec across its full commercial temperature range without derating.

Does the M5M5256DVP-70LL#BE support true battery backup operation below 5 V?

Yes-the M5M5256DVP-70LL#BE retains stored data at supply voltages as low as +2.0 V in standby mode (/S = high), enabling direct connection to backup lithium batteries or supercapacitors. At Vcc = 2.2 V, typical standby current is 0.2 µA; at 2.0 V, data hold is guaranteed per Renesas' Power Down Characteristics table.

What are the valid logic levels for /S, /W, and /OE inputs on the M5M5256DVP-70LL#BE?

The M5M5256DVP-70LL#BE uses TTL-compatible thresholds: VIH ≥ 2.2 V (min), VIL ≤ 0.8 V (max) for all control inputs. These levels are tested at Vcc = 5 V ±10% and ensure interoperability with standard 5 V microcontrollers without external biasing or level shifting.

Can the M5M5256DVP-70LL#BE be used in a write-cycle mode controlled solely by /W?

No-the M5M5256DVP-70LL#BE requires /S to be low for any write operation. Write cycles occur only during overlap of /S and /W both low. If /S is high, the device enters standby regardless of /W state, and outputs go high-impedance. This dual-control architecture prevents accidental writes during chip deselection.

Is the M5M5256DVP-70LL#BE pinout compatible with other 28-pin SRAMs like the HM62256?

No-the M5M5256DVP-70LL#BE uses a proprietary pinout optimized for Renesas' architecture: /S is on pin 1, /W on pin 22, /OE on pin 21, and A14 on pin 1. HM62256 places /CE on pin 27, /WE on pin 28, and OE on pin 20. Physical pin count matches, but signal mapping and timing behavior differ-requiring PCB redesign for substitution.

M5M5256DVP-70LL#BE Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

Programmable:: Not Verified

Memory Type:: -

Memory Format:: -

Technology:: -

Memory Size:: -

Memory Organization:: -

Memory Interface:: -

Clock Frequency:: -

Write Cycle Time - Word, Page:: -

Access Time:: -

Voltage - Supply:: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

M5M5256DVP-70LL#BE FAQ

1.How can I place an order for M5M5256DVP-70LL#BE through Aetrix?

Please submit a Request for Quotation (RFQ) for M5M5256DVP-70LL#BE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for M5M5256DVP-70LL#BE reliable?

The price and inventory of M5M5256DVP-70LL#BE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M5M5256DVP-70LL#BE is usually 5 days.

3.What payment methods are accepted for M5M5256DVP-70LL#BE?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M5M5256DVP-70LL#BE transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for M5M5256DVP-70LL#BE?

M5M5256DVP-70LL#BE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your M5M5256DVP-70LL#BE order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for M5M5256DVP-70LL#BE?

For technical support, including M5M5256DVP-70LL#BE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M5M5256DVP-70LL#BE requirements.

6.How does Aetrix verify that M5M5256DVP-70LL#BE is sourced from the original manufacturer or authorized distributors?

All M5M5256DVP-70LL#BE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M5M5256DVP-70LL#BE meets industry standards.

7.What is the process for return or replacement of M5M5256DVP-70LL#BE?

All M5M5256DVP-70LL#BE units undergo pre-shipment inspection (PSI). If there is an issue with M5M5256DVP-70LL#BE, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The M5M5256DVP-70LL#BE part is unused and in its original packaging.

Return procedure for M5M5256DVP-70LL#BE:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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