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Renesas M5M5256DVP-70LL#SE
- Part No.:
- M5M5256DVP-70LL#SE
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- -
- Datasheet:
-
M5M5256DVP-70LL#SE.pdf
- Description:
- STANDARD SRAM, 32KX8
- Quantity:
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Inventory:3,000
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Product details
Overview
M5M5256DVP-70LL#SE from Renesas is a 262,144-bit (32,768 × 8) CMOS static RAM in a 28-pin TSOP package, operating from a single +5V supply with TTL-compatible I/O, three-state outputs, and battery backup capability down to +2.0V. It delivers 70 ns access time, 0.05 µA typical standby current, and supports non-volatile data retention during power failure in small-capacity memory units.
For engineers reviewing the M5M5256DVP-70LL#SE datasheet, M5M5256DVP-70LL#SE pinout, M5M5256DVP-70LL#SE application, or M5M5256DVP-70LL#SE equivalent, key selection criteria include its /S-/W-/OE control interface, TSOP-28 package footprint, 70 ns read/write timing, low-power standby mode, and compatibility with legacy 8-bit bus systems requiring direct TTL interfacing without clocks or refresh.
Technical Context
The M5M5256DVP-70LL#SE implements a resistive-load NMOS cell array with CMOS periphery for high density and low power. Its operation is governed by three active-low control signals: /S (chip select), /W (write enable), and /OE (output enable), enabling precise bus contention management via OR-tie capability and high-impedance output control.
It supports two write modes (/W-controlled and /S-controlled), requires no external clock or refresh circuitry, and maintains data integrity at Vcc as low as +2.0V-enabling seamless integration into battery-backed memory subsystems where power fail-safe operation is critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 32,768 words × 8 bits = 262,144 bits; supports byte-wide data bus interfacing without address multiplexing. |
| Access time | 70 ns max at Vcc = 5V ±10%; defines minimum read cycle duration for reliable timing in 14.3 MHz bus environments. |
| Standby current | 0.05 µA typical at Vcc = 5.5V; enables multi-year battery backup in low-power hold mode. |
| Supply voltage | +5V ±10% (4.5–5.5V); compatible with standard TTL logic rails and legacy 5V system designs. |
| Data retention voltage | +2.0V minimum; guarantees SRAM contents remain intact during brownout or battery-only operation. |
| Operating temperature | 0°C to +70°C; validated for commercial-grade embedded systems including industrial HMI and instrumentation. |
| I/O compatibility | Direct TTL input/output levels (VIH = 2.4V, VIL = 0.8V, VOH = 2.4V @ -1mA, VOL = 0.4V @ 2mA); eliminates level-shifter requirements. |
Pinout & Package
Package: 28-pin Thin Small Outline Package (TSOP), outline 28P2C-A, dimensions 8 mm × 13.4 mm, surface-mount, JEDEC-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address inputs | 15-bit address bus supporting full 32K-word decoding; no address multiplexing required. |
| DQ1–DQ8 | Bi-directional data I/O | Common 8-bit data bus; internally managed direction via /W and /OE states. |
| /S | Chip select | Active-low enable; places device in standby (Icc4) when high, enabling memory expansion via chip-select daisy-chaining. |
| /W | Write enable | Active-low write strobe; initiates write cycle on overlap with /S low; latches data on trailing edge. |
| /OE | Output enable | Active-low output gate; forces DQ pins to high-impedance when high, preventing bus contention during writes. |
| Vcc | Power supply | +5V supply pin; powers core and I/O; supports data retention down to +2.0V. |
| GND | Ground reference | Signal and power ground return; decoupling recommended within 10 mm of Vcc pin. |
Key Features
| Feature | Design Value |
|---|---|
| No clock or refresh required | Eliminates external timing circuitry and refresh controller overhead in microcontroller-based systems. |
| Three-state outputs with OR-tie capability | Enables direct connection of multiple SRAM outputs to shared data buses without external bus transceivers. |
| Battery backup support to +2.0V | Allows use of coin-cell batteries (e.g., CR2032) to retain memory contents during AC power loss or system shutdown. |
| Direct TTL compatibility | Interoperates with 74LS/74HC logic families without level translation, reducing BOM count and layout complexity. |
| Low active supply current | 50 mA max at 70 ns access time ensures thermal stability in dense PCB layouts without forced air cooling. |
Applications
| Industrial Data Loggers | Legacy Industrial Controllers |
|---|---|
Use Scenario: Capturing sensor readings during intermittent power outages in remote monitoring stations. IC Role / Device Role / Timing Role: Non-volatile buffer memory holding timestamped analog/digital measurements until upload. Use Value: 0.05 µA standby current and +2.0V data retention enable >5-year battery life with CR2032 backup. | Use Scenario: Storing configuration parameters and runtime variables in PLC modules with 5V backplane architecture. IC Role / Device Role / Timing Role: Primary working RAM interfaced directly to 8-bit microcontroller data bus. Use Value: 70 ns access time meets timing budgets of 8051- and Z80-based controllers running at ≤14 MHz. |
| Medical Diagnostic Handhelds | Point-of-Sale Terminals |
Use Scenario: Temporary storage of ECG waveform segments prior to wireless transmission in portable devices. IC Role / Device Role / Timing Role: High-reliability scratchpad memory with deterministic read/write latency. Use Value: TTL-compatible I/O and no-refresh operation simplify design validation under IEC 60601-1 safety constraints. | Use Scenario: Caching transaction records during brief network outages in retail terminals. IC Role / Device Role / Timing Role: Battery-backed volatile memory preserving last-sale data across power cycles. Use Value: /S-controlled standby mode reduces average power to <1 µW during idle periods, extending alkaline battery life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-70TQLI | 16-bit bus width (256K × 16), 70 ns access, 3.3V supply only; no +2.0V data retention. | Requires level shifting for 5V systems; unsuitable for battery-backup below 2.7V. | Select only for new 3.3V designs needing wider data path and higher density. |
| AS6C4008-70ZIN | Same 32K × 8 organization, 70 ns, +5V supply, but 10 µA standby current (200× higher than M5M5256DVP-70LL#SE). | Limited battery backup duration; not viable for multi-year unattended operation. | Acceptable for cost-sensitive 5V applications where battery life is secondary to procurement availability. |
Compared with IS61LV25616AL-70TQLI and AS6C4008-70ZIN, the M5M5256DVP-70LL#SE uniquely combines 5V TTL compatibility, ultra-low 0.05 µA standby, and +2.0V data retention-making it irreplaceable in legacy 5V systems requiring long-term, fail-safe memory hold.
Availability
M5M5256DVP-70LL#SE is available at Aetrix Electronics and suitable for industrial data loggers, legacy PLCs, medical handhelds, and point-of-sale terminals requiring stable component supply, long-lifecycle support, and guaranteed traceable sourcing.
Supply support for M5M5256DVP-70LL#SE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The M5M5256DVP-70LL#SE belongs to Renesas' legacy CMOS SRAM product line, designed specifically for cost-effective, low-power, pin-compatible replacements in 5V embedded systems requiring zero-refresh, battery-backed memory with proven reliability.
FAQ
What is the maximum access time specification for the M5M5256DVP-70LL#SE?
The M5M5256DVP-70LL#SE has a maximum access time of 70 ns at Vcc = 5V ±10%, measured from address valid to data valid under standard load conditions (CL = 100 pF). This value is guaranteed across the full 0°C to +70°C operating temperature range and defines the minimum read cycle time for synchronous bus interfacing.
Does the M5M5256DVP-70LL#SE require an external clock or refresh signal?
No, the M5M5256DVP-70LL#SE is a static RAM and requires neither an external clock nor periodic refresh cycles. Its CMOS latch-based memory cells retain data as long as power is applied above +2.0V, simplifying system design and eliminating refresh overhead in microcontroller-based applications.
What is the lowest supply voltage at which the M5M5256DVP-70LL#SE retains stored data?
The M5M5256DVP-70LL#SE guarantees data retention down to +2.0V on Vcc, enabling reliable battery backup operation during main power failure. This feature is validated per Renesas' Power Down Characteristics specification and applies when /S is held high and all other inputs are at valid logic levels.
Can the M5M5256DVP-70LL#SE be used in a 3.3V system?
No-the M5M5256DVP-70LL#SE is specified only for +5V ±10% (4.5V–5.5V) operation. Its input thresholds (VIH = 2.4V, VIL = 0.8V) and output drive strength are optimized for 5V TTL compatibility; using it at 3.3V violates absolute maximum ratings and risks functional failure or data corruption.
How does the /OE pin function during write operations on the M5M5256DVP-70LL#SE?
During write operations, the /OE pin must be held high to place the DQ1–DQ8 pins in high-impedance state, preventing bus contention between the driving microcontroller and the SRAM's output drivers. The M5M5256DVP-70LL#SE will not drive data onto the bus when /OE is high-even if /S and /W are both low-ensuring clean write cycles.
M5M5256DVP-70LL#SE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- -
- Memory Format:
- -
- Technology:
- -
- Memory Size:
- -
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
M5M5256DVP-70LL#SE FAQ
1.How can I place an order for M5M5256DVP-70LL#SE through Aetrix?
Please submit a Request for Quotation (RFQ) for M5M5256DVP-70LL#SE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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All M5M5256DVP-70LL#SE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M5M5256DVP-70LL#SE meets industry standards.
7.What is the process for return or replacement of M5M5256DVP-70LL#SE?
All M5M5256DVP-70LL#SE units undergo pre-shipment inspection (PSI). If there is an issue with M5M5256DVP-70LL#SE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M5M5256DVP-70LL#SE part is unused and in its original packaging.
Return procedure for M5M5256DVP-70LL#SE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M5M5256DVP-70LL#SE Tags
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