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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas M5M5256DVP-70XG#BE

Name: M5M5256DVP-70XG#BE
Brand: Renesas
SKU: M5M5256DVP-70XG#BE
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: M5M5256DVP-70XG#BE

Manufacturer:: Renesas

Category:: Memory

Package:: -

Datasheet:: M5M5256DVP-70XG#BE.pdf

Description:: STANDARD SRAM, 32KX8

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Product details

Overview

M5M5256DVP-70XG#BE from Renesas is a 262,144-bit (32,768-word × 8-bit) CMOS static RAM in a 28-pin TSOP package, operating on single +5V supply with 70 ns access time, TTL-compatible I/O, and battery backup capability down to +2.0V. It serves as non-volatile data retention memory in embedded controllers and legacy industrial systems requiring simple parallel interface and low standby current.

For engineers reviewing the M5M5256DVP-70XG#BE datasheet, M5M5256DVP-70XG#BE pinout, M5M5256DVP-70XG#BE application, or M5M5256DVP-70XG#BE equivalent, key selection criteria include 70 ns /S-controlled read cycle time, 0.05 µA typical standby current at Vcc = 5.5 V, three-state OR-tie capable outputs, and TSOP-28 mechanical compatibility with legacy board layouts.

Technical Context

This SRAM implements a resistive-load NMOS cell array with CMOS periphery for high density and low power. Its /S-/W-/OE control logic supports both /S- and /W-controlled write cycles, with output enable directly gating the DQ bus to prevent contention during writes.

Power-down operation is enabled when /S rises above Vcc–0.2 V, reducing supply current to ≤0.2 µA at Vcc(PD) = 2.2 V and enabling data retention at +2.0 V - critical for battery-backed memory preservation during main power loss.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory size	32,768 words × 8 bits = 262,144 bits; supports byte-wide parallel data bus interfacing
Access time	70 ns max (t_CR, t_a(S)); defines minimum read cycle interval for reliable timing margin
Standby current	0.05 µA typical at Vcc = 5.5 V; enables multi-year battery backup without significant drain
Supply voltage	+5 V ±10%; compatible with legacy 5 V TTL/CMOS logic rails without level shifting
Data retention voltage	+2.0 V min; guarantees stored data integrity during brown-out or battery-only operation
Operating temperature	0 °C to +70 °C; validated for commercial-grade industrial control and instrumentation environments
I/O compatibility	TTL input thresholds (V_IL ≤ 0.8 V, V_IH ≥ 2.2 V) and output drive (I_OL = 2 mA, I_OH = –1 mA); ensures direct connection to 5 V microcontrollers

Pinout & Package

Package: 28-pin Thin Small Outline Package (TSOP), outline 28P2C-A, dimensions 8 mm × 13.4 mm, surface-mount compatible with standard reflow profiles.

Pin/Terminal	Circuit Role	Design Meaning
A0–A14	Address inputs	15-bit address bus supporting full 32,768-word decoding; no external address latching required
DQ1–DQ8	Bi-directional data I/O	Common data bus pins; direction controlled by /W and /OE; support OR-tie expansion via high-impedance state
/S	Chip select	Active-low enable; controls power-down mode when high; enables memory expansion via daisy-chained selection
/W	Write enable	Active-low write strobe; determines write cycle initiation in conjunction with /S; trailing-edge data capture
/OE	Output enable	Active-low gate for DQ outputs; eliminates bus contention during write cycles; independent of /W timing
Vcc	Power supply	+5 V ±10% primary supply; powers core and I/O; supports data hold down to +2.0 V
GND	Ground reference	Signal and power return; decoupling capacitor placement adjacent to Pin 14 recommended

Key Features

Feature	Design Value
No clock or refresh required	True static operation eliminates system-level refresh overhead and timing complexity
Three-state OR-tie outputs	Enables memory expansion beyond 32 KB using multiple chips on shared DQ bus without external bus transceivers
Battery backup capability	Retains data at Vcc ≥ +2.0 V, allowing seamless transition to backup power during AC failure
Direct TTL compatibility	Eliminates need for level-shifting circuitry when interfacing with 5 V microcontrollers and FPGAs
Low active supply current	50 mA max at 70 ns speed; reduces thermal load and simplifies power delivery design

Applications

Industrial PLC Data Buffer	Legacy Medical Instrument Memory
Use Scenario: Storing real-time sensor logs and configuration parameters in programmable logic controllers with intermittent power. IC Role / Device Role / Timing Role: Non-volatile data buffer retaining critical operational history during brief AC outages. Use Value: 0.05 µA standby current extends coin-cell life to >5 years; +2.0 V data retention ensures zero data loss during brown-out events.	Use Scenario: Holding calibration tables and patient session data in portable diagnostic devices certified for Class II medical use. IC Role / Device Role / Timing Role: Byte-accessible SRAM providing deterministic 70 ns read latency for real-time waveform processing. Use Value: TTL-compatible I/O and 5 V operation eliminate interface logic, reducing BOM count and layout area in space-constrained enclosures.
Automotive Body Control Module	Point-of-Sale Terminal EEPROM Emulation
Use Scenario: Caching door lock status, lighting presets, and user preferences in automotive BCMs without EEPROM wear limitations. IC Role / Device Role / Timing Role: High-reliability volatile memory used as pseudo-EEPROM via controlled power-down sequencing. Use Value: 70 ns access time supports fast MCU polling; /S-controlled power-down enables precise retention window management during ignition cycling.	Use Scenario: Simulating EEPROM behavior in retail terminals where firmware updates require frequent small-data writes without endurance constraints. IC Role / Device Role / Timing Role: Parallel-interface SRAM acting as write-buffered non-volatile storage via external battery and /S-driven retention control. Use Value: OR-tie capability allows dual-chip redundancy; three-state outputs prevent bus conflicts during hot-swap firmware loading sequences.

Industrial PLC Data Buffer

Legacy Medical Instrument Memory

Use Scenario: Storing real-time sensor logs and configuration parameters in programmable logic controllers with intermittent power.

IC Role / Device Role / Timing Role: Non-volatile data buffer retaining critical operational history during brief AC outages.

Use Value: 0.05 µA standby current extends coin-cell life to >5 years; +2.0 V data retention ensures zero data loss during brown-out events.

Use Scenario: Holding calibration tables and patient session data in portable diagnostic devices certified for Class II medical use.

IC Role / Device Role / Timing Role: Byte-accessible SRAM providing deterministic 70 ns read latency for real-time waveform processing.

Use Value: TTL-compatible I/O and 5 V operation eliminate interface logic, reducing BOM count and layout area in space-constrained enclosures.

Automotive Body Control Module

Point-of-Sale Terminal EEPROM Emulation

Use Scenario: Caching door lock status, lighting presets, and user preferences in automotive BCMs without EEPROM wear limitations.

IC Role / Device Role / Timing Role: High-reliability volatile memory used as pseudo-EEPROM via controlled power-down sequencing.

Use Value: 70 ns access time supports fast MCU polling; /S-controlled power-down enables precise retention window management during ignition cycling.

Use Scenario: Simulating EEPROM behavior in retail terminals where firmware updates require frequent small-data writes without endurance constraints.

IC Role / Device Role / Timing Role: Parallel-interface SRAM acting as write-buffered non-volatile storage via external battery and /S-driven retention control.

Use Value: OR-tie capability allows dual-chip redundancy; three-state outputs prevent bus conflicts during hot-swap firmware loading sequences.

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IS61LV25616AL-10TLI	16-bit bus width (vs. 8-bit), 10 ns faster access (10 ns vs. 70 ns), 3.3 V only supply	Requires PCB redesign for wider data bus and voltage translation; unsuitable for 5 V legacy systems	Select only if migrating to 3.3 V architecture and needing higher bandwidth; not drop-in compatible
AS6C4008-70ZIN	Same 8-bit × 32K organization and 70 ns speed, but 28-pin SOJ package (not TSOP), higher standby current (1 µA vs. 0.05 µA)	SOJ footprint incompatible with TSOP land pattern; higher leakage limits battery lifetime in always-on designs	Acceptable for socketed or through-hole prototyping; avoid where board space or battery life is constrained

Compared with IS61LV25616AL-10TLI and AS6C4008-70ZIN, the M5M5256DVP-70XG#BE uniquely combines 5 V TTL compatibility, TSOP-28 footprint, and ultra-low 0.05 µA standby current - making it irreplaceable in cost-sensitive, space-constrained, battery-backed 5 V industrial designs.

Availability

M5M5256DVP-70XG#BE is available at Aetrix Electronics and suitable for industrial PLC data buffering, legacy medical instrument memory, and automotive body control modules requiring stable component supply across extended product lifecycles.

Supply support for M5M5256DVP-70XG#BE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.

The M5M5256DVP-70XG#BE belongs to Renesas' legacy CMOS SRAM product line, designed specifically for 5 V parallel-memory systems requiring zero-refresh operation, battery backup, and long-term industrial availability.

FAQ

What is the maximum access time specification for M5M5256DVP-70XG#BE?

The M5M5256DVP-70XG#BE has a maximum read cycle time (t_CR) and chip select access time (t_a(S)) of 70 ns at Vcc = 5 V ±10%, as specified in the AC Electrical Characteristics table. This value applies under standard test conditions including CL = 100 pF and input rise/fall times ≤5 ns. The 70 ns rating ensures compatibility with legacy 14 MHz bus systems and defines the minimum timing margin for reliable read operations in the M5M5256DVP-70XG#BE.

Does M5M5256DVP-70XG#BE support true battery backup operation?

Yes, the M5M5256DVP-70XG#BE supports true battery backup: it retains stored data at supply voltages as low as +2.0 V, verified per Power Down Characteristics section. When /S is held high (non-selected), standby current drops to ≤0.2 µA at Vcc = 2.2 V, enabling multi-year operation from a CR2032 coin cell. This behavior is intrinsic to the M5M5256DVP-70XG#BE's CMOS/NMOS hybrid cell design and requires no external circuitry.

Is M5M5256DVP-70XG#BE pin-compatible with other variants in the M5M5256DFP/VP family?

Yes, all M5M5256DFP and M5M5256DVP variants - including -55LL, -70LL, -70LLI, -55XL, and -70XL - share identical 28-pin TSOP pinouts and electrical signaling. The M5M5256DVP-70XG#BE uses the same pin configuration as shown in the "PIN CONFIGURATION (TOP VIEW)" diagram, with A0–A14, DQ1–DQ8, /S, /W, /OE, Vcc, and GND occupying identical positions. Speed grade differences affect only timing parameters, not connectivity.

What is the operating temperature range for M5M5256DVP-70XG#BE?

The M5M5256DVP-70XG#BE is rated for commercial temperature operation from 0 °C to +70 °C, as confirmed in the "Operating Temperature" row of the device variant table. This range is explicitly assigned to the -70XG suffix (where "XG" denotes commercial grade), distinguishing it from the -70LLI variant rated for –40 °C to +85 °C. Thermal validation data in the Absolute Maximum Ratings and DC Electrical Characteristics sections apply specifically to this 0–70 °C envelope.

Can M5M5256DVP-70XG#BE be used with 3.3 V systems?

No, the M5M5256DVP-70XG#BE is specified exclusively for +5 V ±10% operation (4.5 V to 5.5 V). Its DC electrical characteristics - including VIH = 2.2 V min, VIL = 0.8 V max, and VOH = 2.4 V min at I_OH = –1 mA - are defined only at Vcc = 5 V. Operation below 4.5 V violates Absolute Maximum Ratings and risks data corruption or failure to meet 70 ns timing. For 3.3 V systems, Renesas offers separate families such as the IS61LV series, not the M5M5256DVP-70XG#BE.

M5M5256DVP-70XG#BE Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

Programmable:: Not Verified

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Memory Interface:: -

Clock Frequency:: -

Write Cycle Time - Word, Page:: -

Access Time:: -

Voltage - Supply:: -

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M5M5256DVP-70XG#BE FAQ

1.How can I place an order for M5M5256DVP-70XG#BE through Aetrix?

Please submit a Request for Quotation (RFQ) for M5M5256DVP-70XG#BE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for M5M5256DVP-70XG#BE reliable?

The price and inventory of M5M5256DVP-70XG#BE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M5M5256DVP-70XG#BE is usually 5 days.

3.What payment methods are accepted for M5M5256DVP-70XG#BE?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M5M5256DVP-70XG#BE transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for M5M5256DVP-70XG#BE?

M5M5256DVP-70XG#BE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your M5M5256DVP-70XG#BE order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for M5M5256DVP-70XG#BE?

For technical support, including M5M5256DVP-70XG#BE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M5M5256DVP-70XG#BE requirements.

6.How does Aetrix verify that M5M5256DVP-70XG#BE is sourced from the original manufacturer or authorized distributors?

All M5M5256DVP-70XG#BE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M5M5256DVP-70XG#BE meets industry standards.

7.What is the process for return or replacement of M5M5256DVP-70XG#BE?

All M5M5256DVP-70XG#BE units undergo pre-shipment inspection (PSI). If there is an issue with M5M5256DVP-70XG#BE, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The M5M5256DVP-70XG#BE part is unused and in its original packaging.

Return procedure for M5M5256DVP-70XG#BE:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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