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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas M5M5V108DKV-70H#BT

Name: M5M5V108DKV-70H#BT
Brand: Renesas
SKU: M5M5V108DKV-70H#BT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: M5M5V108DKV-70H#BT

Manufacturer:: Renesas

Category:: Memory

Package:: -

Datasheet:: M5M5V108DKV-70H#BT.pdf

Description:: SRAM 1M-BIT (128K X 8)

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Product details

Overview

M5M5V108DKV-70H#BT from Renesas Technology Corp. is a 131,072-word × 8-bit (1 Mbit) CMOS static RAM with 70 ns access time, 2.7–3.6 V single-supply operation, 5 mA active current, and 24 µA standby current at 1 MHz - designed for battery-backed memory units in embedded controllers and portable instrumentation.

For engineers reviewing the M5M5V108DKV-70H#BT datasheet, M5M5V108DKV-70H#BT pinout, M5M5V108DKV-70H#BT application, or M5M5V108DKV-70H#BT equivalent, this page delivers verified package mapping (32-pin TSOP, 8 × 13.4 mm), dual chip select (S1/S2) power-down control, TTL-compatible I/O, and OR-tie capability for memory expansion without bus contention.

Technical Context

The M5M5V108DKV-70H#BT implements a triple-polysilicon/double-metal CMOS process with TFT load cells to achieve high density and low power. Its functional architecture supports three distinct operating modes - read, write, and non-selection - controlled by S1, S2, W, and OE inputs, enabling flexible memory expansion and selective power gating.

Power management is implemented via two independent chip select inputs: asserting S1 = high or S2 = low places the device in non-selectable mode, reducing ICC to 24 µA while retaining data hold down to +2 V supply - critical for battery backup during main power loss or system sleep states.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory capacity	1,048,576-bit (131,072 × 8-bit) - supports byte-wide data paths in microcontroller-based systems without external data-width conversion.
Access time	70 ns max - enables direct interface with 14 MHz bus clocks in legacy industrial controllers and test equipment.
Supply voltage	2.7–3.6 V - compatible with 3.3 V logic families and tolerant of Li-ion battery discharge profiles (3.6 V → 2.7 V).
Standby current	24 µA at 1 MHz - allows >1-year data retention on coin-cell backup (e.g., CR2032) in power-critical applications.
Active current	5 mA max - limits thermal rise in sealed enclosures and simplifies DC-DC regulation in multi-rail embedded designs.
Data retention voltage	+2 V minimum - ensures reliable SRAM state preservation during brown-out conditions or controlled power-down sequences.
Input/output compatibility	TTL-compatible inputs and three-state outputs - eliminates level-shifter requirements when interfacing with legacy 5 V microcontrollers via voltage translators or mixed-voltage buses.

Pinout & Package

Package: 32-pin Thin Small Outline Package (TSOP), 8 mm × 13.4 mm, lead pitch 0.5 mm - surface-mount compatible with standard reflow profiles and suitable for high-density PCB layouts.

Pin/Terminal	Circuit Role	Design Meaning
A0–A16	Address inputs	17-bit address bus supporting full 131,072-word decoding; no external address latching required.
DQ1–DQ8	Bi-directional data I/O	Common data bus with three-state output drivers; enables shared bus topology and OR-tie expansion with other SRAMs.
S1, S2	Chip select inputs	Independent enable controls: S1=L & S2=H enables operation; either S1=H or S2=L forces high-Z standby with 24 µA ICC.
W	Write enable	Active-low write strobe synchronized with S1/S2; data latched on trailing edge of W, S1, or S2 - whichever occurs first.
OE	Output enable	Direct control of output drivers; OE=H forces high-impedance state to prevent bus contention during writes or idle cycles.
VCC, GND	Power supply	Single 2.7–3.6 V supply with dedicated ground - no separate VDD/VSS decoupling complexity; bypass capacitor recommended per JEDEC MS-024.

Key Features

Feature	Design Value
Dual chip select (S1/S2) power-down	Reduces standby current to 24 µA while maintaining data integrity at +2 V - eliminates need for external power switches or supervisor ICs in battery-backed systems.
TTL-compatible I/O	Accepts 0.4 V / 2.2 V logic thresholds and drives ±1 mA - interoperates directly with 74LS/74HC peripherals and legacy microcontrollers without level translation.
OR-tie capable outputs	Three-state DQ lines allow parallel connection of multiple M5M5V108DKV-70H#BT devices on same data bus - simplifies memory expansion beyond 1 Mbit without glue logic.
Write cycle flexibility	Supports W-controlled, S1-controlled, and S2-controlled write modes - accommodates diverse timing constraints across host processor families (e.g., Z80, 8051, SH-2).
Non-selection mode isolation	When disabled, outputs enter high-impedance state and ICC drops to standby level - prevents signal loading and power waste in multi-chip memory banks.

Applications

Portable Data Logger	Industrial PLC I/O Buffer
Use Scenario: Battery-powered environmental sensor node recording temperature/humidity every 5 seconds with 72-hour local storage. IC Role / Device Role / Timing Role: Primary non-volatile buffer storing timestamped samples prior to wireless upload; retains data during 30-second power interruptions. Use Value: 24 µA standby current extends CR2032 battery life to >18 months; +2 V data hold ensures zero sample loss during brown-outs.	Use Scenario: Modular programmable logic controller with hot-swappable I/O modules requiring deterministic response to fieldbus commands. IC Role / Device Role / Timing Role: Local scratchpad memory for real-time I/O status mirroring and command queue buffering between CPU and fieldbus interface ASIC. Use Value: 70 ns access time meets 14 MHz bus timing budgets; TTL compatibility avoids level-shifter BOM cost in mixed-voltage backplane designs.
Medical Diagnostic Handheld	Automotive ECU Calibration Memory
Use Scenario: Ultrasound probe with integrated FPGA processing and onboard waveform capture before transfer to tablet host. IC Role / Device Role / Timing Role: Frame buffer holding 128 KB of raw echo data per acquisition cycle; accessed concurrently by FPGA read and analog front-end write. Use Value: Dual S1/S2 enables seamless arbitration between FPGA and AFE controllers; OR-tie supports future capacity upgrades without PCB redesign.	Use Scenario: Engine control unit storing adaptive fuel trim tables updated during vehicle operation and retained after ignition-off. IC Role / Device Role / Timing Role: Fast-access calibration RAM mapped into microcontroller's XDATA space; written during closed-loop learning and read during combustion control loops. Use Value: 5 mA active current minimizes thermal impact near engine bay sensors; 2.7–3.6 V range matches automotive LDO output under cold-crank (2.8 V) and normal operation (3.3 V).

Portable Data Logger

Industrial PLC I/O Buffer

Use Scenario: Battery-powered environmental sensor node recording temperature/humidity every 5 seconds with 72-hour local storage.

IC Role / Device Role / Timing Role: Primary non-volatile buffer storing timestamped samples prior to wireless upload; retains data during 30-second power interruptions.

Use Value: 24 µA standby current extends CR2032 battery life to >18 months; +2 V data hold ensures zero sample loss during brown-outs.

Use Scenario: Modular programmable logic controller with hot-swappable I/O modules requiring deterministic response to fieldbus commands.

IC Role / Device Role / Timing Role: Local scratchpad memory for real-time I/O status mirroring and command queue buffering between CPU and fieldbus interface ASIC.

Use Value: 70 ns access time meets 14 MHz bus timing budgets; TTL compatibility avoids level-shifter BOM cost in mixed-voltage backplane designs.

Medical Diagnostic Handheld

Automotive ECU Calibration Memory

Use Scenario: Ultrasound probe with integrated FPGA processing and onboard waveform capture before transfer to tablet host.

IC Role / Device Role / Timing Role: Frame buffer holding 128 KB of raw echo data per acquisition cycle; accessed concurrently by FPGA read and analog front-end write.

Use Value: Dual S1/S2 enables seamless arbitration between FPGA and AFE controllers; OR-tie supports future capacity upgrades without PCB redesign.

Use Scenario: Engine control unit storing adaptive fuel trim tables updated during vehicle operation and retained after ignition-off.

IC Role / Device Role / Timing Role: Fast-access calibration RAM mapped into microcontroller's XDATA space; written during closed-loop learning and read during combustion control loops.

Use Value: 5 mA active current minimizes thermal impact near engine bay sensors; 2.7–3.6 V range matches automotive LDO output under cold-crank (2.8 V) and normal operation (3.3 V).

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IS61LV1024-70TLI	Same 1 Mbit × 8 organization, 70 ns access, but uses single CE pin instead of dual S1/S2; 3.3 V only (3.135–3.465 V).	Lacks independent chip select power gating - requires external logic or microcontroller GPIO to emulate S1/S2 standby control.	Select when board space is constrained and dual-select functionality is not required; verify voltage tolerance matches system rail.
AS6C1008-70TIN	1 Mbit × 8, 70 ns, 2.7–3.6 V, but no +2 V data retention guarantee; standby current 35 µA typical.	Not qualified for long-term battery backup below 2.7 V - unsuitable for applications requiring >24-hour hold at reduced voltage.	Choose for cost-sensitive industrial control where full +2 V retention is unnecessary and 35 µA standby is acceptable.

Compared with IS61LV1024-70TLI and AS6C1008-70TIN, the M5M5V108DKV-70H#BT uniquely delivers dual-select power-down with guaranteed +2 V data retention and OR-tie expandability - making it optimal for battery-backed, field-upgradeable, and multi-SRAM systems where reliability and design flexibility are prioritized over minimal BOM count.

Availability

M5M5V108DKV-70H#BT is available at Aetrix Electronics and suitable for portable instrumentation, industrial PLCs, medical handhelds, and automotive ECUs requiring stable component supply and long-lifecycle support.

Supply support for M5M5V108DKV-70H#BT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Technology Corp. was formed in 2003 through the merger of Hitachi and Mitsubishi Electric's semiconductor operations, specializing in microcontrollers, analog, logic, and memory solutions for industrial and embedded markets.

The M5M5V108DKV-70H#BT belongs to Renesas' legacy low-power CMOS SRAM product line, engineered specifically for battery-backed, space-constrained, and mixed-voltage embedded systems requiring deterministic timing and robust data retention.

FAQ

What is the maximum operating temperature range for the M5M5V108DKV-70H#BT?

The M5M5V108DKV-70H#BT is rated for operation from –40°C to +85°C ambient temperature. This industrial-grade range ensures reliable performance in factory automation panels, outdoor metering equipment, and vehicle-mounted diagnostic tools where thermal extremes are common. All electrical specifications - including 70 ns access time and 24 µA standby current - are guaranteed across this full range when powered at 2.7–3.6 V.

Does the M5M5V108DKV-70H#BT support true 3.3 V operation with TTL-level compatibility?

Yes, the M5M5V108DKV-70H#BT operates fully within the 2.7–3.6 V supply range and maintains TTL-compatible input thresholds (VIL ≤ 0.4 V, VIH ≥ 2.2 V) and output drive (VOH ≥ 2.4 V at –0.5 mA, VOL ≤ 0.4 V at 2 mA). This allows direct interfacing with 3.3 V microcontrollers such as the Renesas SH7269 or NXP LPC1788 without level shifters, preserving signal integrity and reducing BOM cost.

How does the dual chip select (S1/S2) architecture of the M5M5V108DKV-70H#BT improve system power efficiency?

The M5M5V108DKV-70H#BT reduces system power by allowing independent control of standby entry: asserting either S1 = high or S2 = low forces the device into non-selection mode, dropping ICC to 24 µA while retaining data at +2 V. This eliminates the need for external power switches or supervisor ICs in multi-SRAM systems, enabling selective memory bank shutdown during idle periods - a key advantage in portable and energy-harvesting applications.

Can the M5M5V108DKV-70H#BT be used in OR-tied memory configurations with other SRAMs?

Yes, the M5M5V108DKV-70H#BT features three-state outputs controlled by OE and chip select states, enabling direct OR-tie connection of DQ1–DQ8 lines with identical devices or compatible SRAMs. When any device is deselected (S1=H or S2=L), its outputs go high-impedance, preventing bus contention - simplifying memory expansion beyond 1 Mbit without address decoders or bus transceivers.

What is the minimum supply voltage required to retain data in the M5M5V108DKV-70H#BT during power-down?

The M5M5V108DKV-70H#BT guarantees data retention down to +2.0 V supply voltage in non-selection mode (S1=H or S2=L), as specified in the Power Down Characteristics table. This allows integration with coin-cell backup circuits (e.g., CR2032) or supercapacitor hold-up networks that decay from 3.0 V to 2.0 V over extended periods - ensuring zero data loss during main power failures lasting minutes to hours.

M5M5V108DKV-70H#BT Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

Programmable:: Not Verified

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Memory Format:: -

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Memory Organization:: -

Memory Interface:: -

Clock Frequency:: -

Write Cycle Time - Word, Page:: -

Access Time:: -

Voltage - Supply:: -

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M5M5V108DKV-70H#BT FAQ

1.How can I place an order for M5M5V108DKV-70H#BT through Aetrix?

Please submit a Request for Quotation (RFQ) for M5M5V108DKV-70H#BT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for M5M5V108DKV-70H#BT reliable?

The price and inventory of M5M5V108DKV-70H#BT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M5M5V108DKV-70H#BT is usually 5 days.

3.What payment methods are accepted for M5M5V108DKV-70H#BT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M5M5V108DKV-70H#BT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for M5M5V108DKV-70H#BT?

M5M5V108DKV-70H#BT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your M5M5V108DKV-70H#BT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for M5M5V108DKV-70H#BT?

For technical support, including M5M5V108DKV-70H#BT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M5M5V108DKV-70H#BT requirements.

6.How does Aetrix verify that M5M5V108DKV-70H#BT is sourced from the original manufacturer or authorized distributors?

All M5M5V108DKV-70H#BT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M5M5V108DKV-70H#BT meets industry standards.

7.What is the process for return or replacement of M5M5V108DKV-70H#BT?

All M5M5V108DKV-70H#BT units undergo pre-shipment inspection (PSI). If there is an issue with M5M5V108DKV-70H#BT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The M5M5V108DKV-70H#BT part is unused and in its original packaging.

Return procedure for M5M5V108DKV-70H#BT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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