Renesas M5M5V108DKV-70HIBJ

Overview

M5M5V108DKV-70HIBJ from Renesas Technology Corp. is a 131,072-word × 8-bit (1 Mbit) CMOS static RAM with 70 ns access time, 2.7–3.6 V supply voltage, and 24 µA standby current at 1 MHz. It features dual chip select (S1/S2), write control (W), output enable (OE), and three-state I/O for bus sharing in embedded memory subsystems.

For engineers reviewing the M5M5V108DKV-70HIBJ datasheet, M5M5V108DKV-70HIBJ pinout, M5M5V108DKV-70HIBJ application, or M5M5V108DKV-70HIBJ equivalent, key selection criteria include low-voltage operation, battery-backed data retention down to +2 V, TSOP-32 (8 × 13.4 mm) packaging, and S1/S2-controlled power-down mode for system-level energy management.

Technical Context

The M5M5V108DKV-70HIBJ implements a high-density SRAM array using triple-polysilicon/double-metal CMOS process with TFT load cells, enabling low-power operation without compromising speed. Its dual chip select architecture allows hierarchical memory expansion and selective power gating.

Operation is controlled by four active-low/high logic inputs: S1 and S2 determine chip selection and power-down entry, W enables write cycles (with S1=L/S2=H), and OE gates output drivers. Data hold at +2 V supports nonvolatile backup during main power loss.

Key Specifications

Pinout & Package

Package: 32-pin Thin Small Outline Package (TSOP-I), 8 mm × 13.4 mm body, 0.5 mm pitch - optimized for high-density PCB layouts and reflow soldering.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with IS61LV1024AL-10TLI and AS6C1008-70SCN, the M5M5V108DKV-70HIBJ uniquely delivers 24 µA standby current with +2 V data retention in a compact 8 × 13.4 mm TSOP-I package - making it optimal for space-constrained, battery-backed industrial designs where voltage headroom is limited.

Availability

M5M5V108DKV-70HIBJ is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical device data loggers, and telecom line card configuration stores requiring stable component supply across extended product lifecycles.

Supply support for M5M5V108DKV-70HIBJ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Technology Corp. was formed in 2003 through the merger of Hitachi and Mitsubishi Electric's semiconductor operations, focusing on microcontrollers, analog, logic, and memory solutions.

The M5M5V108DKV-70HIBJ belongs to Renesas' legacy low-voltage CMOS SRAM family, designed specifically for battery-backed, space-constrained embedded systems needing reliable, pin-compatible memory with minimal external support circuitry.

FAQ

What is the minimum supply voltage required to retain data in M5M5V108DKV-70HIBJ during power-down?

The M5M5V108DKV-70HIBJ guarantees data retention down to +2.0 V on VCC. This allows direct connection to a single lithium coin cell or supercapacitor for backup without regulation. Operation below 2.0 V risks data loss, and the device is not characterized for retention at lower voltages. The M5M5V108DKV-70HIBJ must be held within its absolute maximum rating of –0.3 V to +4.6 V at all times.

Does M5M5V108DKV-70HIBJ support true bidirectional data transfer without external direction control?

Yes, the M5M5V108DKV-70HIBJ uses common DQ1–DQ8 pins for both input and output, with direction controlled entirely by internal logic driven by W (write enable) and OE (output enable). When W is low and OE is high, data is written; when W is high and OE is low, data is read. No external transceivers or direction pins are needed - the M5M5V108DKV-70HIBJ manages bus direction autonomously.

Can M5M5V108DKV-70HIBJ be used in systems with a 5 V logic interface?

The M5M5V108DKV-70HIBJ has TTL-compatible inputs (VIH = 2.2 V min, VIL = 0.4 V max) and outputs (VOH ≥ 2.4 V at –0.5 mA), allowing safe interfacing with 5 V microcontrollers using pull-up resistors on DQ and control lines. However, VCC must remain within 2.7–3.6 V - applying 5 V to VCC will damage the M5M5V108DKV-70HIBJ. Level translation is unnecessary for signal integrity but required for supply isolation.

What is the function of the NC pins on M5M5V108DKV-70HIBJ, and how should they be handled on the PCB?

Pins 9 and 25 of the M5M5V108DKV-70HIBJ are designated NC (No Connection) and contain no internal bonding or circuitry. They must be left unconnected - neither tied to VCC nor GND. Routing traces to these pins or placing vias beneath them may cause mechanical stress or solder wicking issues in the TSOP package. The M5M5V108DKV-70HIBJ datasheet explicitly prohibits connecting NC pins to any net.

How does the dual chip select (S1/S2) architecture of M5M5V108DKV-70HIBJ improve memory system scalability?

The S1 (active-low) and S2 (active-high) inputs enable hierarchical memory decoding: S2 can act as a bank enable while S1 selects individual devices within the bank, or vice versa. This eliminates the need for external 2-to-4 decoders in multi-SRAM systems. During deselect (S1 high or S2 low), the M5M5V108DKV-70HIBJ enters ultra-low-power standby (24 µA) with outputs in high-impedance - allowing OR-tie expansion without bus contention. This architecture directly supports scalable, low-power memory subsystems.