Renesas M5M5V108DKV-70H#ST

Overview

M5M5V108DKV-70H#ST from Renesas Technology Corp. is a 131,072-word × 8-bit (1 Mbit) CMOS static RAM with 70 ns access time, 2.7–3.6 V supply, 5 mA active current, and 24 µA standby current at 1 MHz - designed for battery-backed memory units in portable and low-power embedded systems.

For engineers reviewing the M5M5V108DKV-70H#ST datasheet, M5M5V108DKV-70H#ST pinout, M5M5V108DKV-70H#ST application, or M5M5V108DKV-70H#ST equivalent, this page delivers verified package mapping (32-pin TSOP, 8 × 13.4 mm), dual chip-select control (S1/S2), TTL-compatible I/O, three-state outputs with OR-tie capability, and +2 V data retention during power-down.

Technical Context

The M5M5V108DKV-70H#ST implements a high-density SRAM array using triple-polysilicon/double-metal CMOS process with TFT load cells, enabling low-power operation without refresh. Its dual chip-select architecture (S1 active-low, S2 active-high) supports hierarchical memory expansion and selective power-down.

Write operations are controlled via W (active-low), with latching on the trailing edge of W, S1, or S2 - whichever occurs first - requiring strict setup/hold timing. OE enables high-impedance output during bus contention, and data hold is guaranteed down to +2 V V_CC, supporting seamless battery backup during main power loss.

Key Specifications

Pinout & Package

Package: 32-pin Thin Small Outline Package (TSOP), 8 mm × 13.4 mm, lead pitch 0.5 mm - optimized for high-density surface-mount assembly and thermal reliability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with IS61LV10248AL-70TQLI and AS6C1008-70ZIN, the M5M5V108DKV-70H#ST uniquely combines dual-select control for memory banking, +2 V data retention for robust backup, and TTL compatibility - making it optimal for legacy industrial and portable systems where power resilience and pin-level compatibility are critical.

Availability

M5M5V108DKV-70H#ST is available at Aetrix Electronics and suitable for portable medical devices, industrial PLCs, automotive infotainment modules, and legacy HMI controllers requiring stable component supply across long-lifecycle programs.

Supply support for M5M5V108DKV-70H#ST includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Technology Corp. is a Japanese semiconductor manufacturer formed in 2003 through the merger of Hitachi and Mitsubishi Electric's semiconductor divisions, specializing in microcontrollers, analog, power, and memory solutions.

The M5M5V108DKV-70H#ST belongs to Renesas' legacy low-voltage CMOS SRAM product line, engineered for battery-backed, space-constrained embedded systems requiring high reliability and TTL interoperability.

FAQ

What is the operating voltage range for the M5M5V108DKV-70H#ST?

The M5M5V108DKV-70H#ST operates across a supply voltage range of 2.7 V to 3.6 V. This range ensures compatibility with standard 3.3 V logic systems while supporting battery-backed operation down to 2.7 V. The device guarantees data retention at +2 V, but functional operation (read/write) is only specified within the 2.7–3.6 V window per its DC electrical characteristics table.

Does the M5M5V108DKV-70H#ST support true dual chip-select operation with independent power-down?

Yes, the M5M5V108DKV-70H#ST implements true dual chip-select logic using S1 (active-low) and S2 (active-high). When S1 is high or S2 is low, the device enters non-selection mode with outputs in high-impedance and current reduced to standby level (24 µA). This enables selective bank disable and hierarchical memory expansion without external logic - a key differentiator from single-CE SRAMs.

What is the significance of the "+2 V data retention" specification for the M5M5V108DKV-70H#ST?

The +2 V data retention specification means the M5M5V108DKV-70H#ST maintains stored data even when V_CC drops to +2 V - critical for battery-backup applications. During main power failure, a backup coin cell or capacitor can sustain V_CC at ≥2 V, preserving memory contents until power resumes. This behavior is explicitly tested and guaranteed, unlike many SRAMs that lose data below 2.7 V.

Can the M5M5V108DKV-70H#ST be used as a direct replacement for older 5 V TTL SRAMs?

No - the M5M5V108DKV-70H#ST is not a direct replacement for 5 V TTL SRAMs. While its inputs and outputs are TTL-compatible (VIH = 2.2 V, VIL = 0.4 V), it requires a 2.7–3.6 V supply and cannot tolerate 5 V on any pin. It replaces 3.3 V-compatible predecessors like the M5M5V108DFP-70HI, not 5 V devices such as the 62256. System-level voltage rail validation is required before substitution.

What package type does the M5M5V108DKV-70H#ST use, and how does it differ from the DFP and DVP variants?

The M5M5V108DKV-70H#ST uses a 32-pin TSOP (Thin Small Outline Package) measuring 8 mm × 13.4 mm (Outline 32P3K-B). This differs from the DFP variant (32-pin SOP, 525 mil wide) and DVP variant (32-pin TSOP, 8 mm × 20 mm). All share identical pinout and functionality, but the KV variant's compact 13.4 mm length optimizes board space in dense portable designs - confirmed by Mitsubishi's outline drawings and package designation "KV".