Renesas M5M5V108DVP-70HIBT

Overview

M5M5V108DVP-70HIBT from Renesas Technology Corp. is a 131,072-word × 8-bit (1 Mbit) CMOS static RAM with 70 ns access time, 2.7–3.6 V single-supply operation, and 24 µA standby current at 1 MHz - designed for battery-backed memory units in portable instrumentation and low-power embedded systems.

For engineers reviewing the M5M5V108DVP-70HIBT datasheet, M5M5V108DVP-70HIBT pinout, M5M5V108DVP-70HIBT application, or M5M5V108DVP-70HIBT equivalent, key selection considerations include TSOP-32 package compatibility, dual chip select (S1/S2) power-down control, TTL-compatible I/O, and +2 V data retention capability during backup operation.

Technical Context

The M5M5V108DVP-70HIBT implements a high-density SRAM array using triple-polysilicon/double-metal CMOS process with TFT load cells, enabling low active (5 mA) and ultra-low standby (24 µA) current. It supports three distinct operational modes - read, write, and non-selection - controlled by S1, S2, W, and OE inputs.

Its dual chip select architecture allows hierarchical memory expansion and selective power-down: asserting S1=H or S2=L places the device in high-impedance standby with data retention down to +2 V V_CC, while full read/write cycles require S1=L and S2=H with proper setup/hold timing relative to W and address transitions.

Key Specifications

Pinout & Package

Package: 32-pin Thin Small Outline Package (TSOP-I), 8 mm × 20 mm, lead pitch 0.5 mm, RoHS-compliant surface-mount device.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with IS61LV10248AL-10TLI and AS6C1008-70BIN, the M5M5V108DVP-70HIBT uniquely combines guaranteed +2 V data retention, dual-select power management, and industrial temperature range in a drop-in TSOP-32 footprint - making it optimal for safety-critical and battery-constrained designs where reliability trumps raw speed.

Availability

M5M5V108DVP-70HIBT is available at Aetrix Electronics and suitable for portable instrumentation, industrial PLCs, medical infusion pumps, and automotive diagnostic tools requiring stable component supply and long-term lifecycle support.

Supply support for M5M5V108DVP-70HIBT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Technology Corp. is a Japanese semiconductor manufacturer formed in 2003 through the merger of Hitachi and Mitsubishi Electric's semiconductor operations, specializing in microcontrollers, analog, power, and memory solutions.

The M5M5V108DVP-70HIBT belongs to Renesas' legacy low-power CMOS SRAM product line, engineered specifically for industrial and portable applications demanding robust data retention, wide supply voltage tolerance, and minimal standby power.

FAQ

What is the minimum supply voltage required to retain data in M5M5V108DVP-70HIBT?

The M5M5V108DVP-70HIBT guarantees data retention down to +2.0 V V_CC, as specified in its Power Down Characteristics table. This feature enables reliable operation during brown-out conditions or when backed by low-voltage batteries or supercapacitors. The M5M5V108DVP-70HIBT maintains stored content without refresh as long as V_CC remains ≥2.0 V, even with S1 or S2 asserted to disable the device.

Does M5M5V108DVP-70HIBT support true 3.3 V TTL-compatible signaling?

Yes, the M5M5V108DVP-70HIBT features fully TTL-compatible inputs and outputs across its 2.7–3.6 V operating range. Input thresholds meet VIH ≥0.6×V_CC and VIL ≤0.4×V_CC; output drive strength satisfies VOH ≥2.4 V at IOH = –0.5 mA and VOL ≤0.4 V at IOL = 2 mA. This allows direct interface with standard 3.3 V microcontrollers and FPGAs without level-shifting circuitry.

How does the dual chip select (S1/S2) architecture of M5M5V108DVP-70HIBT improve system design?

The dual chip select (S1/S2) architecture of M5M5V108DVP-70HIBT enables hierarchical memory banking and selective power-down: asserting either S1=H or S2=L places the device in low-current standby (24 µA) while preserving data, and allows OR-tie expansion with other SRAMs on a shared data bus. This eliminates external gating logic needed for bank isolation in multi-SRAM systems, simplifying PCB layout and reducing BOM count.

What is the maximum operating frequency supported by M5M5V108DVP-70HIBT?

The M5M5V108DVP-70HIBT does not operate on a clock signal - it is an asynchronous static RAM. Its performance is defined by access time (70 ns max), not frequency. However, in a typical microcontroller interface running at 10–15 MHz bus speed, the 70 ns access time supports reliable single-cycle reads/writes without wait states. The M5M5V108DVP-70HIBT's timing is governed by setup/hold requirements relative to S1, S2, W, and OE edges, not a system clock.

Is M5M5V108DVP-70HIBT pin-compatible with other 32-pin TSOP-I SRAMs like the AS6C1008?

No, M5M5V108DVP-70HIBT is not pin-compatible with AS6C1008 despite sharing the 32-pin TSOP-I outline. Pin assignments differ significantly: M5M5V108DVP-70HIBT uses dual chip selects (S1/S2) and places NC pins at positions 9 and 25, whereas AS6C1008 uses a single CE pin and allocates all 32 pins to address/data/control. Direct replacement would require PCB redesign. The M5M5V108DVP-70HIBT pinout is documented in its Mitsubishi-era datasheet and verified against Renesas' legacy product mapping.