Renesas M5M5V108DVP-70HIST

Overview

M5M5V108DVP-70HIST from Renesas Technology Corp. is a 131,072-word × 8-bit (1 Mbit) CMOS static RAM with 70 ns access time, 2.7–3.6 V supply, 5 mA active current, and 24 µA standby current at 1 MHz - designed for low-power battery-backed memory applications in embedded controllers and portable instrumentation.

For engineers reviewing the M5M5V108DVP-70HIST datasheet, M5M5V108DVP-70HIST pinout, M5M5V108DVP-70HIST application, or M5M5V108DVP-70HIST equivalent, key selection criteria include TSOP-32 package compatibility, dual chip select (S1/S2) power-down control, TTL-compatible I/O, three-state outputs with OR-tie capability, and +2 V data retention during power failure.

Technical Context

The M5M5V108DVP-70HIST implements a high-density SRAM array using triple-polysilicon and double-metal CMOS process with TFT load cells, enabling low leakage and stable operation across –40°C to +85°C. Its dual chip select architecture (S1 active-low, S2 active-high) supports hierarchical memory expansion and selective power-down without external logic.

Write operations are controlled via W (write enable), with latching on the trailing edge of W, S1, or S2 - whichever occurs first - requiring strict setup/hold timing relative to those edges. OE directly gates output drivers, eliminating bus contention during writes and enabling high-impedance states for memory expansion.

Key Specifications

Pinout & Package

Package: 32-pin Thin Small Outline Package (TSOP-I), 8 mm × 20 mm, surface-mount, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with IS61LV1024-70TQLI and AS6C1008-70PCN, the M5M5V108DVP-70HIST uniquely delivers dual-select power gating and verified +2 V data retention - making it the only option among the three suitable for true zero-power backup in safety-critical embedded systems.

Availability

M5M5V108DVP-70HIST is available at Aetrix Electronics and suitable for industrial PLC data buffers, portable medical device memory, automotive body control modules, and legacy HMI cache applications requiring stable component supply across extended product lifecycles.

Supply support for M5M5V108DVP-70HIST includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Technology Corp. is a Japanese semiconductor manufacturer formed in 2003 through the merger of Hitachi and Mitsubishi Electric's semiconductor divisions, specializing in microcontrollers, analog, power, and memory solutions.

The M5M5V108DVP-70HIST belongs to Renesas' legacy CMOS SRAM product line, engineered for ultra-low-power, battery-backed memory in industrial and portable equipment where reliability and long-term availability are essential.

FAQ

What is the maximum operating temperature range for the M5M5V108DVP-70HIST?

The M5M5V108DVP-70HIST is rated for operation from –40°C to +85°C. This industrial temperature range is fully specified in its DC and AC electrical characteristics tables, including access time, current consumption, and data retention - ensuring reliable performance in demanding environments such as automotive body control units and factory-floor PLCs. The M5M5V108DVP-70HIST maintains all timing and functional guarantees across this full range without derating.

Does the M5M5V108DVP-70HIST support true battery backup with data retention below 3.3 V?

Yes, the M5M5V108DVP-70HIST guarantees data retention down to +2.0 V supply voltage, as confirmed in its Power Down Characteristics section. At VCC ≥ 2.0 V and ambient temperatures up to +85°C, the device holds stored data indefinitely in standby mode with ICC(PD) ≤ 20 µA. This makes the M5M5V108DVP-70HIST suitable for battery-backup applications where main power may fail unexpectedly, such as in medical data loggers and industrial safety controllers.

How does the dual chip select (S1/S2) architecture of the M5M5V108DVP-70HIST differ from standard CE-based SRAMs?

The M5M5V108DVP-70HIST uses complementary chip select inputs - S1 active-low and S2 active-high - enabling hierarchical memory banking and selective power-down without external logic. When S1 is high or S2 is low, the device enters non-selection mode with outputs in high-impedance and current reduced to standby levels. This differs from single-CE SRAMs by allowing finer-grained power control and OR-tie expansion, and is explicitly documented in the M5M5V108DVP-70HIST function table and timing diagrams.

Is the M5M5V108DVP-70HIST pin-compatible with other variants in the M5M5V108D family, such as the DFP or DKV packages?

No, the M5M5V108DVP-70HIST is not pin-compatible with the DFP (SOP) or DKV (smaller TSOP) variants. While all share identical logic-level pin functions and signal names, the physical pinout order differs significantly - especially for address lines (e.g., A11, A9, A8 appear in different positions across VP vs. FP). The M5M5V108DVP-70HIST uses Outline 32P3H-E, and its pin mapping is unique to the VP variant; PCB layout must match this specific ordering.

What are the absolute maximum ratings for input voltage on the M5M5V108DVP-70HIST?

The absolute maximum input voltage rating for the M5M5V108DVP-70HIST is –0.3 V to VCC + 0.3 V, with a note specifying –3.0 V tolerance for AC pulses ≤ 30 ns duration. This rating applies to all inputs including A0–A16, S1, S2, W, OE, and DQ1–DQ8. Exceeding these limits risks latch-up or permanent damage. These values are defined in the Absolute Maximum Ratings table of the official M5M5V108DVP-70HIST datasheet and apply across the full operating temperature range.