Renesas M5M5V108DVP-70H#ST
- Part No.:
- M5M5V108DVP-70H#ST
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- -
- Datasheet:
-
M5M5V108DVP-70H#ST.pdf
- Description:
- SRAM 1M-BIT (128K X 8)
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Product details
Overview
M5M5V108DVP-70H#ST from Renesas Technology Corp. is a 131,072-word × 8-bit (1 Mbit) CMOS static RAM in a 32-pin TSOP-II package, featuring 70 ns access time, 2.7–3.6 V single-supply operation, 5 mA active current, and 24 µA standby current at 1 MHz - optimized for battery-backed memory applications in portable and low-power embedded systems.
For engineers reviewing the M5M5V108DVP-70H#ST datasheet, M5M5V108DVP-70H#ST pinout, M5M5V108DVP-70H#ST application, or M5M5V108DVP-70H#ST equivalent, key selection criteria include TTL-compatible I/O, dual chip select (S1/S2) for memory expansion, three-state outputs with OR-tie capability, +2 V data retention during power-down, and verified TSOP-II 8 × 20 mm footprint compatibility.
Technical Context
The M5M5V108DVP-70H#ST implements a high-density SRAM architecture using triple-polysilicon and double-metal CMOS process technology with TFT load cells, enabling low-power operation without compromising speed. Its dual active-low chip select inputs (S1, S2) support hierarchical memory banking and selective power-down modes.
Write operations are controlled via W (write enable), with mode selection determined by the combination of S1, S2, W, and OE signals - supporting both W-controlled and S1/S2-controlled write cycles. Data hold is guaranteed down to +2 V VCC, and output disable/enable timing is specified with 25 ns tdis(OE) and 10 ns ten(OE) under standard load conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory organization | 131,072 words × 8 bits (1,048,576-bit total) |
| Access time (max) | 70 ns - defines minimum read cycle time for reliable data retrieval |
| Supply voltage range | 2.7 V to 3.6 V - compatible with 3.3 V logic systems and battery-backed operation |
| Active supply current | 5 mA at 1 MHz - enables low-power operation in active state |
| Standby current | 24 µA at 1 MHz - supports extended battery life in sleep mode |
| Data retention voltage | +2 V minimum - allows memory contents to be held during brown-out or backup power |
| Input/output interface | TTL-compatible - eliminates level-shifting requirements in legacy 3.3 V/5 V mixed-signal designs |
Pinout & Package
Package: 32-pin Thin Small Outline Package (TSOP-II), 8 mm × 20 mm body, 0.5 mm lead pitch, RoHS-compliant surface-mount device per Outline 32P3H-E.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address inputs | 17-bit address bus supporting full 131,072-word addressing |
| DQ1–DQ8 | Bi-directional data I/O | 8-bit common data bus with three-state output control |
| S1, S2 | Chip select inputs | Active-low dual chip selects enabling memory expansion and selective power-down |
| W | Write enable | Active-low signal controlling write latching on trailing edge |
| OE | Output enable | Directly disables output drivers to prevent bus contention |
| VCC, GND | Power supply terminals | Single 2.7–3.6 V supply with dedicated ground reference |
| NC | No connection | Pin 9 and Pin 25 are unconnected - must remain floating |
Key Features
| Feature | Design Value |
|---|---|
| Dual chip select (S1/S2) control | Enables hierarchical memory mapping and selective power-down of unselected banks |
| +2 V data retention | Guarantees memory content integrity during brown-out or battery-backup operation |
| Three-state outputs with OR-tie capability | Allows direct wire-OR connection of multiple devices without external logic |
| TTL-compatible I/O levels | Eliminates need for level translators when interfacing with legacy 3.3 V or 5 V controllers |
| Low 24 µA standby current | Extends battery life in portable instrumentation and always-on monitoring systems |
Applications
| Portable Medical Monitor | Industrial PLC Data Buffer |
|---|---|
Use Scenario: Real-time waveform capture and local storage in handheld ECG units with limited battery capacity. IC Role / Device Role / Timing Role: Non-volatile data buffer holding up to 128 KB of sampled physiological data between host transfers. Use Value: 24 µA standby current and +2 V data retention enable >72-hour battery runtime with persistent memory during power cycling. | Use Scenario: Temporary storage of sensor logs and control state variables in DIN-rail mounted programmable logic controllers. IC Role / Device Role / Timing Role: Fast-access scratchpad memory for cyclic scan execution and fault-event timestamping. Use Value: 70 ns access time ensures deterministic response within 10 ms PLC scan cycles; dual S1/S2 enables modular memory expansion across I/O modules. |
| POS Terminal Memory Expansion | Legacy Embedded Communication Module |
Use Scenario: Adding local transaction history cache to low-cost point-of-sale terminals using aging microcontrollers. IC Role / Device Role / Timing Role: Parallel SRAM extension replacing slower serial EEPROM for rapid receipt buffering. Use Value: TTL-compatible I/O and 5 mA active current allow drop-in integration with 8051-family MCUs without redesigning level-shifting or power delivery. | Use Scenario: Upgrading memory subsystem in discontinued telecom line cards requiring long-term component availability. IC Role / Device Role / Timing Role: Pin-identical replacement for obsolete Mitsubishi SRAMs in field-deployed equipment. Use Value: Identical 32-pin TSOP-II footprint and function table ensure zero PCB change; Renesas continuity guarantees supply chain stability beyond original end-of-life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV10248AL-70TLI | 70 ns access, 3.3 V only, 32-pin SOJ (not TSOP-II); 4 mA active current, 1 µA standby | SOJ package requires PCB rework; lower standby current but no +2 V data retention | Select only if board layout permits SOJ and ultra-low standby dominates over retention requirement |
| AS6C1008-70SCN | 70 ns access, 3.3 V, 32-pin TSOP-I (8 × 13.4 mm); 5 mA active, 30 µA standby, no +2 V retention | Smaller TSOP-I footprint incompatible with M5M5V108DVP-70H#ST's 8 × 20 mm pad layout | Consider only for new designs where compact size outweighs legacy compatibility and battery-backup needs |
Compared with IS61LV10248AL-70TLI and AS6C1008-70SCN, the M5M5V108DVP-70H#ST uniquely combines TSOP-II mechanical compatibility, +2 V data retention, and dual chip select for expandable memory architectures - making it irreplaceable in battery-backed legacy upgrades and space-constrained industrial buffers requiring guaranteed data hold.
Availability
M5M5V108DVP-70H#ST is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data buffers, and legacy POS terminal memory expansion requiring stable component supply and long-term lifecycle support.
Supply support for M5M5V108DVP-70H#ST includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Technology Corp. is a Japanese semiconductor manufacturer formed in 2003 through the merger of Hitachi and Mitsubishi Electric's semiconductor operations, specializing in microcontrollers, analog, power, and memory solutions.
The M5M5V108DVP-70H#ST belongs to Renesas' legacy CMOS SRAM product line, designed specifically for low-power, battery-backed, and industrial-grade embedded memory applications where reliability, pin compatibility, and long-term supply continuity are critical.
FAQ
What is the operating voltage range for the M5M5V108DVP-70H#ST?
The M5M5V108DVP-70H#ST operates over a supply voltage range of 2.7 V to 3.6 V. This range ensures compatibility with standard 3.3 V logic systems while supporting battery-backed operation down to 2.7 V. The device guarantees full functionality-including 70 ns access time and data retention-across this entire range, as validated in the DC electrical characteristics table of its official datasheet.
Does the M5M5V108DVP-70H#ST support true data retention at low voltage?
Yes, the M5M5V108DVP-70H#ST maintains stored data at +2 V VCC, as explicitly specified in the Power Down Characteristics section. This feature enables reliable battery-backup operation during main power failure or intentional power-down sequences, a capability confirmed in the "Power down supply voltage" parameter (VCC(PD) = 2.0 V min) and supported by functional timing under low-VCC conditions.
What package type is used for the M5M5V108DVP-70H#ST?
The M5M5V108DVP-70H#ST uses a 32-pin Thin Small Outline Package (TSOP-II) with dimensions of 8 mm × 20 mm and 0.5 mm lead pitch, conforming to Outline 32P3H-E. This surface-mount package is distinct from SOP and TSOP-I variants in the same family and is mechanically and electrically validated for use in high-density, reflow-soldered industrial PCBs.
How does the dual chip select (S1/S2) function in the M5M5V108DVP-70H#ST?
The M5M5V108DVP-70H#ST uses S1 and S2 as independent active-low chip select inputs to define three operational states: selected (S1=L, S2=H), deselected (S1=H or S2=L), and power-down (S1=H, S2=L). When deselected, outputs enter high-impedance state and ICC drops to 24 µA; this enables OR-tie expansion and hierarchical memory banking without external decoding logic.
Is the M5M5V108DVP-70H#ST pin-compatible with other variants in the M5M5V108D series?
Yes, the M5M5V108DVP-70H#ST shares identical pinout and function mapping with M5M5V108DFP-70HI and M5M5V108DKV-70HI, differing only in package type (TSOP-II vs. SOP vs. TSOP-I). All variants use the same 32-pin configuration, address/data/control signal assignments, and timing behavior - confirmed by the shared PIN CONFIGURATION diagram and FUNCTION TABLE in the original Mitsubishi/Renesas documentation.
M5M5V108DVP-70H#ST Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- -
- Memory Format:
- -
- Technology:
- -
- Memory Size:
- -
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
M5M5V108DVP-70H#ST FAQ
1.How can I place an order for M5M5V108DVP-70H#ST through Aetrix?
Please submit a Request for Quotation (RFQ) for M5M5V108DVP-70H#ST on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M5M5V108DVP-70H#ST reliable?
The price and inventory of M5M5V108DVP-70H#ST are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M5M5V108DVP-70H#ST is usually 5 days.
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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M5M5V108DVP-70H#ST transactions.
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Once your M5M5V108DVP-70H#ST order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M5M5V108DVP-70H#ST?
For technical support, including M5M5V108DVP-70H#ST datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M5M5V108DVP-70H#ST requirements.
6.How does Aetrix verify that M5M5V108DVP-70H#ST is sourced from the original manufacturer or authorized distributors?
All M5M5V108DVP-70H#ST products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M5M5V108DVP-70H#ST meets industry standards.
7.What is the process for return or replacement of M5M5V108DVP-70H#ST?
All M5M5V108DVP-70H#ST units undergo pre-shipment inspection (PSI). If there is an issue with M5M5V108DVP-70H#ST, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M5M5V108DVP-70H#ST part is unused and in its original packaging.
Return procedure for M5M5V108DVP-70H#ST:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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