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Renesas M5M5V108DVP-70H#ST

Part No.:
M5M5V108DVP-70H#ST
Manufacturer:
Renesas
Category:
Memory
Package:
-
Datasheet:
AetrixM5M5V108DVP-70H#ST.pdf
Description:
SRAM 1M-BIT (128K X 8)
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,889

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Product details

Overview

M5M5V108DVP-70H#ST from Renesas Technology Corp. is a 131,072-word × 8-bit (1 Mbit) CMOS static RAM in a 32-pin TSOP-II package, featuring 70 ns access time, 2.7–3.6 V single-supply operation, 5 mA active current, and 24 µA standby current at 1 MHz - optimized for battery-backed memory applications in portable and low-power embedded systems.

For engineers reviewing the M5M5V108DVP-70H#ST datasheet, M5M5V108DVP-70H#ST pinout, M5M5V108DVP-70H#ST application, or M5M5V108DVP-70H#ST equivalent, key selection criteria include TTL-compatible I/O, dual chip select (S1/S2) for memory expansion, three-state outputs with OR-tie capability, +2 V data retention during power-down, and verified TSOP-II 8 × 20 mm footprint compatibility.

Technical Context

The M5M5V108DVP-70H#ST implements a high-density SRAM architecture using triple-polysilicon and double-metal CMOS process technology with TFT load cells, enabling low-power operation without compromising speed. Its dual active-low chip select inputs (S1, S2) support hierarchical memory banking and selective power-down modes.

Write operations are controlled via W (write enable), with mode selection determined by the combination of S1, S2, W, and OE signals - supporting both W-controlled and S1/S2-controlled write cycles. Data hold is guaranteed down to +2 V VCC, and output disable/enable timing is specified with 25 ns tdis(OE) and 10 ns ten(OE) under standard load conditions.

Key Specifications

ParameterValue and Actual Design Meaning
Memory organization131,072 words × 8 bits (1,048,576-bit total)
Access time (max)70 ns - defines minimum read cycle time for reliable data retrieval
Supply voltage range2.7 V to 3.6 V - compatible with 3.3 V logic systems and battery-backed operation
Active supply current5 mA at 1 MHz - enables low-power operation in active state
Standby current24 µA at 1 MHz - supports extended battery life in sleep mode
Data retention voltage+2 V minimum - allows memory contents to be held during brown-out or backup power
Input/output interfaceTTL-compatible - eliminates level-shifting requirements in legacy 3.3 V/5 V mixed-signal designs

Pinout & Package

Package: 32-pin Thin Small Outline Package (TSOP-II), 8 mm × 20 mm body, 0.5 mm lead pitch, RoHS-compliant surface-mount device per Outline 32P3H-E.

Pin/TerminalCircuit RoleDesign Meaning
A0–A16Address inputs17-bit address bus supporting full 131,072-word addressing
DQ1–DQ8Bi-directional data I/O8-bit common data bus with three-state output control
S1, S2Chip select inputsActive-low dual chip selects enabling memory expansion and selective power-down
WWrite enableActive-low signal controlling write latching on trailing edge
OEOutput enableDirectly disables output drivers to prevent bus contention
VCC, GNDPower supply terminalsSingle 2.7–3.6 V supply with dedicated ground reference
NCNo connectionPin 9 and Pin 25 are unconnected - must remain floating

Key Features

FeatureDesign Value
Dual chip select (S1/S2) controlEnables hierarchical memory mapping and selective power-down of unselected banks
+2 V data retentionGuarantees memory content integrity during brown-out or battery-backup operation
Three-state outputs with OR-tie capabilityAllows direct wire-OR connection of multiple devices without external logic
TTL-compatible I/O levelsEliminates need for level translators when interfacing with legacy 3.3 V or 5 V controllers
Low 24 µA standby currentExtends battery life in portable instrumentation and always-on monitoring systems

Applications

Portable Medical MonitorIndustrial PLC Data Buffer

Use Scenario: Real-time waveform capture and local storage in handheld ECG units with limited battery capacity.

IC Role / Device Role / Timing Role: Non-volatile data buffer holding up to 128 KB of sampled physiological data between host transfers.

Use Value: 24 µA standby current and +2 V data retention enable >72-hour battery runtime with persistent memory during power cycling.

Use Scenario: Temporary storage of sensor logs and control state variables in DIN-rail mounted programmable logic controllers.

IC Role / Device Role / Timing Role: Fast-access scratchpad memory for cyclic scan execution and fault-event timestamping.

Use Value: 70 ns access time ensures deterministic response within 10 ms PLC scan cycles; dual S1/S2 enables modular memory expansion across I/O modules.

POS Terminal Memory ExpansionLegacy Embedded Communication Module

Use Scenario: Adding local transaction history cache to low-cost point-of-sale terminals using aging microcontrollers.

IC Role / Device Role / Timing Role: Parallel SRAM extension replacing slower serial EEPROM for rapid receipt buffering.

Use Value: TTL-compatible I/O and 5 mA active current allow drop-in integration with 8051-family MCUs without redesigning level-shifting or power delivery.

Use Scenario: Upgrading memory subsystem in discontinued telecom line cards requiring long-term component availability.

IC Role / Device Role / Timing Role: Pin-identical replacement for obsolete Mitsubishi SRAMs in field-deployed equipment.

Use Value: Identical 32-pin TSOP-II footprint and function table ensure zero PCB change; Renesas continuity guarantees supply chain stability beyond original end-of-life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IS61LV10248AL-70TLI70 ns access, 3.3 V only, 32-pin SOJ (not TSOP-II); 4 mA active current, 1 µA standbySOJ package requires PCB rework; lower standby current but no +2 V data retentionSelect only if board layout permits SOJ and ultra-low standby dominates over retention requirement
AS6C1008-70SCN70 ns access, 3.3 V, 32-pin TSOP-I (8 × 13.4 mm); 5 mA active, 30 µA standby, no +2 V retentionSmaller TSOP-I footprint incompatible with M5M5V108DVP-70H#ST's 8 × 20 mm pad layoutConsider only for new designs where compact size outweighs legacy compatibility and battery-backup needs

Compared with IS61LV10248AL-70TLI and AS6C1008-70SCN, the M5M5V108DVP-70H#ST uniquely combines TSOP-II mechanical compatibility, +2 V data retention, and dual chip select for expandable memory architectures - making it irreplaceable in battery-backed legacy upgrades and space-constrained industrial buffers requiring guaranteed data hold.

Availability

M5M5V108DVP-70H#ST is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data buffers, and legacy POS terminal memory expansion requiring stable component supply and long-term lifecycle support.

Supply support for M5M5V108DVP-70H#ST includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Technology Corp. is a Japanese semiconductor manufacturer formed in 2003 through the merger of Hitachi and Mitsubishi Electric's semiconductor operations, specializing in microcontrollers, analog, power, and memory solutions.

The M5M5V108DVP-70H#ST belongs to Renesas' legacy CMOS SRAM product line, designed specifically for low-power, battery-backed, and industrial-grade embedded memory applications where reliability, pin compatibility, and long-term supply continuity are critical.

FAQ

What is the operating voltage range for the M5M5V108DVP-70H#ST?

The M5M5V108DVP-70H#ST operates over a supply voltage range of 2.7 V to 3.6 V. This range ensures compatibility with standard 3.3 V logic systems while supporting battery-backed operation down to 2.7 V. The device guarantees full functionality-including 70 ns access time and data retention-across this entire range, as validated in the DC electrical characteristics table of its official datasheet.

Does the M5M5V108DVP-70H#ST support true data retention at low voltage?

Yes, the M5M5V108DVP-70H#ST maintains stored data at +2 V VCC, as explicitly specified in the Power Down Characteristics section. This feature enables reliable battery-backup operation during main power failure or intentional power-down sequences, a capability confirmed in the "Power down supply voltage" parameter (VCC(PD) = 2.0 V min) and supported by functional timing under low-VCC conditions.

What package type is used for the M5M5V108DVP-70H#ST?

The M5M5V108DVP-70H#ST uses a 32-pin Thin Small Outline Package (TSOP-II) with dimensions of 8 mm × 20 mm and 0.5 mm lead pitch, conforming to Outline 32P3H-E. This surface-mount package is distinct from SOP and TSOP-I variants in the same family and is mechanically and electrically validated for use in high-density, reflow-soldered industrial PCBs.

How does the dual chip select (S1/S2) function in the M5M5V108DVP-70H#ST?

The M5M5V108DVP-70H#ST uses S1 and S2 as independent active-low chip select inputs to define three operational states: selected (S1=L, S2=H), deselected (S1=H or S2=L), and power-down (S1=H, S2=L). When deselected, outputs enter high-impedance state and ICC drops to 24 µA; this enables OR-tie expansion and hierarchical memory banking without external decoding logic.

Is the M5M5V108DVP-70H#ST pin-compatible with other variants in the M5M5V108D series?

Yes, the M5M5V108DVP-70H#ST shares identical pinout and function mapping with M5M5V108DFP-70HI and M5M5V108DKV-70HI, differing only in package type (TSOP-II vs. SOP vs. TSOP-I). All variants use the same 32-pin configuration, address/data/control signal assignments, and timing behavior - confirmed by the shared PIN CONFIGURATION diagram and FUNCTION TABLE in the original Mitsubishi/Renesas documentation.

M5M5V108DVP-70H#ST Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
-
Memory Format:
-
Technology:
-
Memory Size:
-
Memory Organization:
-
Memory Interface:
-
Clock Frequency:
-
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

M5M5V108DVP-70H#ST FAQ

1.How can I place an order for M5M5V108DVP-70H#ST through Aetrix?

Please submit a Request for Quotation (RFQ) for M5M5V108DVP-70H#ST on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for M5M5V108DVP-70H#ST reliable?

The price and inventory of M5M5V108DVP-70H#ST are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M5M5V108DVP-70H#ST is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M5M5V108DVP-70H#ST transactions.

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4.How is shipping managed for M5M5V108DVP-70H#ST?

M5M5V108DVP-70H#ST orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your M5M5V108DVP-70H#ST order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for M5M5V108DVP-70H#ST?

For technical support, including M5M5V108DVP-70H#ST datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M5M5V108DVP-70H#ST requirements.

6.How does Aetrix verify that M5M5V108DVP-70H#ST is sourced from the original manufacturer or authorized distributors?

All M5M5V108DVP-70H#ST products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M5M5V108DVP-70H#ST meets industry standards.

7.What is the process for return or replacement of M5M5V108DVP-70H#ST?

All M5M5V108DVP-70H#ST units undergo pre-shipment inspection (PSI). If there is an issue with M5M5V108DVP-70H#ST, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The M5M5V108DVP-70H#ST part is unused and in its original packaging.

Return procedure for M5M5V108DVP-70H#ST:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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