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Renesas M5M5V5636GP-16I#B0
- Part No.:
- M5M5V5636GP-16I#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- -
- Datasheet:
-
M5M5V5636GP-16I#B0.pdf
- Description:
- SRAM, 512KX36, 3.8NS
- Quantity:
- Payment:
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Product details
Overview
M5M5V5636GP-16I#B0 from Renesas Electronics is a 18-Mbit (524,288 × 36) synchronous SRAM optimized for high-bandwidth networking applications. It operates at 167 MHz with 3.8 ns access time, supports 3.3 V core/2.5 V or 3.3 V I/O supplies, and features pipelined synchronous interface with individual byte write control and snooze mode for power management. It is used in enterprise switches and routers requiring deterministic burst read/write cycles.
For engineers reviewing the M5M5V5636GP-16I#B0 datasheet, M5M5V5636GP-16I#B0 pinout, M5M5V5636GP-16I#B0 application, or M5M5V5636GP-16I#B0 equivalent, this page delivers verified timing parameters, industrial-grade temperature support (–40°C to +85°C), linear/interleaved burst configuration, and precise DC/AC electrical specifications per Renesas preliminary Rev. 0.1 documentation.
Technical Context
This SRAM uses fully registered synchronous architecture: all address, data, chip enables, byte write, ADV, CKE#, and W# inputs are sampled on the rising edge of CLK. Internal self-timed write circuitry eliminates external G# control, and burst addressing is generated internally via ADV-driven counter with LBO# selecting linear or interleaved order.
It implements four independent byte-write lanes (BWa#–BWd#), each controlling a 9-bit data group plus parity bit (DQa/DQPa through DQd/DQPd), enabling partial writes without bus turnaround penalty. Snooze mode (ZZ active HIGH) reduces standby current to 30 mA while retaining memory contents.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 18,874,368-bit (524,288 words × 36 bits) |
| Access Time | 3.8 ns - guarantees data valid within 3.8 ns after clock HIGH for 167 MHz operation |
| Clock Frequency | 167 MHz - supports 6.0 ns cycle time for high-throughput packet buffering |
| Supply Voltages | VDD = 3.135–3.465 V (core); VDDQ = 2.375–2.625 V (2.5 V I/O) or 3.135–3.465 V (3.3 V I/O) |
| Operating Temperature | –40°C to +85°C - qualified for industrial networking equipment environments |
| Standby Current | 30 mA - measured in both CMOS standby (CLK stopped) and snooze mode (ZZ active) |
| Burst Modes | Linear or interleaved - selected by DC-level LBO# pin; no runtime reconfiguration |
Pinout & Package
Package: 100-pin TQFP (14 mm × 14 mm, 0.5 mm pitch), RoHS-compliant, industrial-grade thermal resistance (θJA = 28.18°C/W, air velocity = 0 m/sec).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Synchronous Address Inputs | Registered on CLK rising edge; A0/A1 set burst counter LSBs |
| BWa#–BWd# | Synchronous Byte Write Enables | Active LOW; BWa# controls DQa/DQPa (byte 0), etc.; enable partial writes |
| CLK | Master Clock Input | Rising-edge-triggered register clock for all synchronous inputs and outputs |
| E1#, E2, E3# | Synchronous Chip Enables | E1# and E3# active LOW, E2 active HIGH; support depth expansion up to 3 chips |
| ADV | Address Advance/Load | LOW loads new address; HIGH advances internal burst counter and ignores W# |
| CKE# | Clock Enable | Active LOW; suspends clock propagation and extends previous cycle when HIGH |
| ZZ | Snooze Enable | Active HIGH; forces low-power standby with full data retention and input ignore |
| W# | Read/Write Control | Active LOW initiates write; only method to distinguish READ/WRITE during address load |
| G# | Output Enable | Asynchronous active LOW; enables output drivers independently of clock |
| LBO# | Burst Mode Control | DC-operated; HIGH/NC = interleaved burst, LOW = linear burst |
| DQa–DQd, DQPa–DQPd | Synchronous Data I/O | 36-bit data bus + 4 parity bits; each byte group has dedicated DQ/DQP pins |
| VDD / VSS | Core Power / Ground | 3.3 V core supply; separate from I/O domain |
| VDDQ / VSSQ | I/O Buffer Supply / Ground | Configurable for 2.5 V or 3.3 V I/O interface compatibility |
| MCH | Must Connect High | Internally pulled up; must be tied to VDD for reliable operation |
| NC | No Connect | Not bonded; may be grounded per layout best practice |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Synchronous Interface | Eliminates bus turnaround dead cycles between reads and writes via fully registered inputs/outputs |
| Individual Byte Write Control | Four independent BW# signals allow selective 9-bit writes without disturbing other bytes |
| Linear or Interleaved Burst Selection | LBO# pin sets burst order statically-supports cache-line or sequential DMA access patterns |
| Snooze Mode Power Management | Reduces ICC to 30 mA while preserving full memory content; entered asynchronously via ZZ HIGH |
| Three-Chip-Enable Architecture | E1#, E2, E3# support seamless depth expansion without external logic or address decoding |
Applications
| Layer-3 Switching Buffers | High-Speed Router Packet Memory |
|---|---|
Use Scenario: Storing forwarding tables and packet headers in multi-gigabit Ethernet switches with sub-10 ns latency requirements. IC Role / Device Role / Timing Role: Acts as primary synchronous buffer for ingress/egress pipeline stages, synchronized to system clock with zero wait states. Use Value: 3.8 ns access time and 167 MHz clock enable real-time header lookup and rewrite without stalling the switching fabric. | Use Scenario: Temporary storage of fragmented IP packets during classification and QoS processing in core routers. IC Role / Device Role / Timing Role: Provides burst-accessible, low-latency scratchpad memory for packet reassembly engines operating at line rate. Use Value: Linear burst mode (LBO# = LOW) delivers contiguous 4-word reads aligned to IPv4/IPv6 payload boundaries, minimizing bus arbitration overhead. |
| Telecom Line Card Control Memory | Network Processor Co-Processor Cache |
Use Scenario: Holding configuration state and statistics counters in carrier-grade DSLAM or OLT line cards exposed to wide ambient temperature swings. IC Role / Device Role / Timing Role: Industrial-temperature SRAM serving as nonvolatile-configurable working memory for embedded control firmware. Use Value: –40°C to +85°C rating and 30 mA snooze current ensure uninterrupted operation during thermal cycling and power-save intervals. | Use Scenario: Offloading context-switching and table lookups from a network processor's internal cache in DPI or firewall appliances. IC Role / Device Role / Timing Role: External synchronous cache supporting parallel instruction/data fetches with deterministic 6.0 ns cycle timing. Use Value: Fully registered interface and CKE#-controlled clock gating eliminate metastability risks in multi-clock-domain systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-167AXC | 4-Mbit (128K × 32), 167 MHz, 3.3 V only (no VDDQ separation), no snooze mode | Lacks byte-write granularity and low-power standby; suited for simpler buffering where I/O voltage flexibility is not required | Select if 32-bit bus width suffices and 2.5 V I/O compatibility is unnecessary |
| IS61WV102436BLL-167TQLI | 36-Mbit (1M × 36), 167 MHz, 3.3 V core/I/O, no LBO# burst selection, higher ICC1 (450 mA) | Double density but higher active power; lacks linear/interleaved burst configurability and snooze mode | Select when capacity >18 Mbit is mandatory and thermal/power budget allows higher dissipation |
Compared with CY7C1362BV33-167AXC and IS61WV102436BLL-167TQLI, the M5M5V5636GP-16I#B0 uniquely combines 18-Mbit density, dual-voltage I/O (2.5 V/3.3 V), hardware-selectable burst order, and snooze-mode power gating-making it optimal for thermally constrained, high-throughput networking datapaths requiring precise timing control.
Availability
M5M5V5636GP-16I#B0 is available at Aetrix Electronics and suitable for high-end networking infrastructure, telecom line cards, and network processor subsystems requiring stable component supply across extended product lifecycles.
Supply support for M5M5V5636GP-16I#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.
The M5M5V5636GP-16I#B0 belongs to Renesas' legacy high-speed synchronous SRAM product line, designed specifically for bandwidth-intensive networking equipment such as Layer-3 switches and core routers demanding deterministic latency and robust industrial temperature operation.
FAQ
What is the maximum clock frequency supported by the M5M5V5636GP-16I#B0?
The M5M5V5636GP-16I#B0 supports a maximum clock frequency of 167 MHz, corresponding to a 6.0 ns clock cycle time. This is validated under industrial temperature conditions (–40°C to +85°C) with VDD = 3.135–3.465 V and VDDQ = 2.375–2.625 V (2.5 V I/O) or 3.135–3.465 V (3.3 V I/O). The -16I speed grade is explicitly rated for this performance.
Does the M5M5V5636GP-16I#B0 support both 2.5 V and 3.3 V I/O interfaces?
Yes, the M5M5V5636GP-16I#B0 supports dual I/O voltage operation via its dedicated VDDQ supply pin. When VDDQ is set to 2.375–2.625 V, the device operates with 2.5 V I/O signaling; when VDDQ is set to 3.135–3.465 V, it operates with 3.3 V I/O signaling. Core logic remains at 3.3 V (VDD) in both configurations.
How does the LBO# pin affect burst behavior in the M5M5V5636GP-16I#B0?
The LBO# pin on the M5M5V5636GP-16I#B0 is a DC-operated control that selects burst order: when pulled HIGH or left unconnected (NC), the device performs interleaved bursts; when pulled LOW, it performs linear bursts. This setting must remain static during operation and cannot be changed dynamically mid-burst sequence.
What power-saving modes are available on the M5M5V5636GP-16I#B0?
The M5M5V5636GP-16I#B0 offers two low-power states: CMOS standby (ICC3 = 30 mA), activated when CKE# is held HIGH and all inputs are static; and snooze mode (ICC4 = 30 mA), activated by driving ZZ HIGH. Snooze mode retains full memory content and ignores all inputs except ZZ, making it ideal for rapid wake-up scenarios.
Can the M5M5V5636GP-16I#B0 be used in depth-expanded memory configurations?
Yes, the M5M5V5636GP-16I#B0 supports depth expansion using three independent chip enables: E1# (active LOW), E2 (active HIGH), and E3# (active LOW). This allows stacking multiple devices without external address decoding logic, simplifying design for memory capacities beyond 18 Mbit while maintaining synchronous timing integrity.
M5M5V5636GP-16I#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- -
- Memory Format:
- -
- Technology:
- -
- Memory Size:
- -
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
M5M5V5636GP-16I#B0 FAQ
1.How can I place an order for M5M5V5636GP-16I#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for M5M5V5636GP-16I#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M5M5V5636GP-16I#B0 reliable?
The price and inventory of M5M5V5636GP-16I#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M5M5V5636GP-16I#B0 is usually 5 days.
3.What payment methods are accepted for M5M5V5636GP-16I#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M5M5V5636GP-16I#B0 transactions.
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M5M5V5636GP-16I#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M5M5V5636GP-16I#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M5M5V5636GP-16I#B0?
For technical support, including M5M5V5636GP-16I#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M5M5V5636GP-16I#B0 requirements.
6.How does Aetrix verify that M5M5V5636GP-16I#B0 is sourced from the original manufacturer or authorized distributors?
All M5M5V5636GP-16I#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M5M5V5636GP-16I#B0 meets industry standards.
7.What is the process for return or replacement of M5M5V5636GP-16I#B0?
All M5M5V5636GP-16I#B0 units undergo pre-shipment inspection (PSI). If there is an issue with M5M5V5636GP-16I#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M5M5V5636GP-16I#B0 part is unused and in its original packaging.
Return procedure for M5M5V5636GP-16I#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M5M5V5636GP-16I#B0 Tags
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