Renesas M5M5V5636GP-16I#BE

Overview

M5M5V5636GP-16I#BE from Renesas Electronics is a 18-Mbit (524,288 × 36) synchronous SRAM optimized for high-bandwidth networking applications. It operates at 167 MHz with 3.8 ns access time, supports 3.3 V core/2.5 V or 3.3 V I/O supplies, and features fully registered pipelined I/O for zero-bus-turnaround operation in switches and routers.

For engineers reviewing the M5M5V5636GP-16I#BE datasheet, M5M5V5636GP-16I#BE pinout, M5M5V5636GP-16I#BE application, or M5M5V5636GP-16I#BE equivalent, this page delivers verified timing parameters, industrial-grade temperature support (–40°C to +85°C), burst mode control (linear/interleaved), individual byte write capability, and Snooze mode power-down behavior - all critical for deterministic memory subsystem design.

Technical Context

This SRAM implements synchronous, clock-driven operation with all address, data, and control inputs registered on the rising edge of CLK. Its architecture includes a 19-bit address register, linear/interleaved burst counter, four independent byte-write drivers, and output registers that eliminate external G# timing constraints.

It supports three chip enables (E1#, E2, E3#) for depth expansion, uses ADV to load or advance burst addresses, and employs CKE# to gate clock propagation. The LBO# pin statically selects burst order, while ZZ enables asynchronous snooze mode with 30 mA standby current.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (14 mm × 14 mm, 0.5 mm pitch), RoHS-compliant, industrial-grade thermal resistance (θJA = 28.18°C/W, still air).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-167AXC and IS61WV51236BLL-167TQLI, the M5M5V5636GP-16I#BE uniquely supports dual I/O voltage (2.5 V/3.3 V), Snooze mode with 30 mA standby, and zero-bus-turnaround architecture - making it optimal for thermally sensitive, mixed-signal networking hardware requiring deterministic latency and flexible voltage scaling.

Availability

M5M5V5636GP-16I#BE is available at Aetrix Electronics and suitable for high-end networking equipment, telecom infrastructure, and industrial embedded systems requiring stable component supply, long-lifecycle support, and industrial temperature qualification.

Supply support for M5M5V5636GP-16I#BE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The M5M5V5636GP-16I#BE belongs to Renesas' legacy high-performance synchronous SRAM product line, designed specifically for bandwidth-intensive networking applications including switches, routers, and network processors requiring low-latency, burst-capable memory with industrial reliability.

FAQ

What is the maximum operating frequency and corresponding access time for the M5M5V5636GP-16I#BE?

The M5M5V5636GP-16I#BE is rated for 167 MHz operation with a 3.8 ns access time (tKHQV) and 6.0 ns cycle time (tKHKH). These values are specified under industrial temperature conditions (–40°C to +85°C) and VDD = 3.135–3.465 V, VDDQ = 2.375–2.625 V (2.5 V I/O mode). The device also supports a 133 MHz / 4.2 ns variant (M5M5V5636GP-13I), but the M5M5V5636GP-16I#BE is the 167 MHz version.

Does the M5M5V5636GP-16I#BE support both 2.5 V and 3.3 V I/O interfaces?

Yes, the M5M5V5636GP-16I#BE supports dual I/O voltage operation via separate VDDQ and VSSQ pins. It accepts VDDQ = 2.375–2.625 V for 2.5 V I/O compatibility or VDDQ = 3.135–3.465 V for 3.3 V CMOS compatibility, while maintaining a fixed 3.3 V core supply (VDD). This flexibility allows direct interfacing with both 2.5 V and 3.3 V logic families without level shifters.

How does the Snooze mode (ZZ) function in the M5M5V5636GP-16I#BE, and what is its power impact?

The Snooze mode is activated by driving the ZZ pin HIGH, placing the M5M5V5636GP-16I#BE into a low-power standby state with full data retention. In this mode, all other inputs are ignored, and ICC4 is limited to 30 mA maximum. Recovery time (tZZREC) is 2 × tKHKH (12 ns at 167 MHz). This feature enables dynamic power management during link idle periods in networking hardware.

What burst modes does the M5M5V5636GP-16I#BE support, and how is selection implemented?

The M5M5V5636GP-16I#BE supports both linear and interleaved burst modes, selected by the DC-operated LBO# pin: HIGH or NC enables interleaved burst; LOW enables linear burst. The burst order affects internal address generation during consecutive accesses after an initial ADV-LOW load. LBO# must remain static during normal operation and is not sampled dynamically.

Can the M5M5V5636GP-16I#BE be used in depth-expanded memory configurations, and how many chip enables does it provide?

Yes, the M5M5V5636GP-16I#BE supports depth expansion using three dedicated chip enable signals: E1# (active-low), E2 (active-high), and E3# (active-low). These allow stacking multiple devices to increase total word count without external decoding logic. All three enables are synchronous and sampled only when ADV is LOW, ensuring coordinated activation across the expanded bank.