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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas M5M5V5A36GP-85#B0

Name: M5M5V5A36GP-85#B0
Brand: Renesas
SKU: M5M5V5A36GP-85#B0
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: M5M5V5A36GP-85#B0

Manufacturer:: Renesas

Category:: Memory

Package:: -

Datasheet:: M5M5V5A36GP-85#B0.pdf

Description:: SRAM, 512KX36, 8.5NS

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Product details

Overview

M5M5V5A36GP-85#B0 from Renesas Electronics is a 524,288-word × 36-bit (18.87 Mbit) synchronous flow-through network SRAM with single 3.3 V core supply, separate VDDQ for 2.5 V/3.3 V I/O, and 8.5 ns access time. It supports burst read/write via ADV-controlled linear or interleaved addressing and is used in high-bandwidth packet buffering for enterprise switches and routers.

For engineers reviewing the M5M5V5A36GP-85#B0 datasheet, M5M5V5A36GP-85#B0 pinout, M5M5V5A36GP-85#B0 application, or M5M5V5A36GP-85#B0 equivalent, key selection considerations include its 100-pin TQFP package, synchronous clocked interface with CKE# and ZZ snooze control, byte-selectable write capability (BWa#–BWd#), and dual-mode burst addressing (LBO# configurable).

Technical Context

This SRAM implements a synchronous, clock-edge-triggered architecture where all address, control, and data inputs-including E1#, E2, E3#, ADV, W#, BWa#–BWd#, and CLK-are registered on the rising edge. Its flow-through read mode delivers output within one clock cycle after address load, while single late write requires data to arrive one clock edge after address/control setup.

The device integrates a 19-bit address register, linear/interleaved burst counter, four independent byte-write driver banks, and output-select logic with programmable burst sequence (via LBO#). Snooze mode (ZZ HIGH) reduces standby current to 30 mA without data loss, and CKE# enables clock gating for dynamic power management during idle cycles.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	524,288 words × 36 bits = 18.87 Mbit; supports full 36-bit parallel data path for high-throughput packet buffer applications.
Access Time	8.5 ns (tKHQV); determines minimum clock period for guaranteed read data valid timing in flow-through mode.
Supply Voltage	VDD = 3.135–3.465 V (±5% of 3.3 V); VDDQ = 2.375–2.625 V (for 2.5 V I/O) or 3.135–3.465 V (for 3.3 V I/O); enables mixed-voltage system interfacing.
Operating Current	ICC1 = 260 mA max at 10 ns cycle time; defines thermal design margin and PCB power delivery requirements under active burst operation.
Burst Mode Control	LBO# pin selects linear or interleaved burst sequence; critical for matching memory access pattern to switch fabric or ASIC DMA engine behavior.
Power-Down Current	ICC4 = 30 mA in snooze mode (ZZ HIGH); enables low-power idle states without data retention loss during traffic lulls.
Package	100-pin TQFP (14 mm × 14 mm, 0.5 mm pitch); compatible with standard surface-mount assembly and provides 36 data + 19 address + 10 control I/Os in compact footprint.

Pinout & Package

100-pin Thin Quad Flat Package (TQFP), 14 mm × 14 mm body, 0.5 mm lead pitch, exposed pad not specified. Pin functions validated per Renesas M5M5V5A36GP-75,85 REV.1.0 datasheet (pp. 4–5).

Pin/Terminal	Circuit Role	Design Meaning
A0–A18	Synchronous Address Inputs	19-bit address bus registered on CLK rising edge; A0/A1 control internal burst counter start offset.
BWa#–BWd#	Synchronous Byte Write Enables	Four independent active-low signals enabling 9-bit writes per byte lane (DQa/DQPa, DQb/DQPb, etc.); allows partial-word updates without read-modify-write.
CLK	System Clock Input	Rising-edge-triggered master clock synchronizing all address, control, and data transfers; requires <2.0 ns setup/hold relative to other inputs.
E1#, E2, E3#	Synchronous Chip Enables	Three enable signals supporting depth expansion; E1# and E3# active-low, E2 active-high-enables flexible bank decoding in multi-chip modules.
ADV	Address Advance/Load Control	LOW loads new external address; HIGH advances internal burst counter-enables continuous burst without reissuing full address.
W#	Read/Write Control	Active-low signal determining cycle type when ADV is LOW; sole arbiter between read and write operations in synchronous mode.
ZZ	Snooze Enable	Asynchronous active-HIGH input forcing low-power standby; overrides all clocks and controls, retaining memory contents with 30 mA draw.
G#	Output Enable	Asynchronous active-low control of output drivers; enables tri-state behavior for bus sharing without clock dependency.
DQa–DQd / DQPa–DQPd	Synchronous Data I/O	36-bit bidirectional data bus split into four 9-bit bytes with parity pins (DQPa–DQPd); each byte has dedicated write enable and I/O voltage domain (VDDQ).
VDD / VSS	Core Power / Ground	3.3 V core supply and return; decoupling required per Renesas layout guidelines to maintain signal integrity at 118 MHz max clock rate.
VDDQ / VSSQ	I/O Buffer Supply / Ground	Separate 2.5 V or 3.3 V I/O rail enabling interface compatibility with FPGA/ASIC I/O banks operating at either voltage.
LBO#	Burst Mode Select	DC-configurable pin selecting linear (LOW) or interleaved (HIGH/NC) burst order-must remain static during operation per datasheet Note 28.

Key Features

Feature	Design Value
Flow-Through Read Mode	Delivers read data on same clock cycle as address load (tKHQV = 8.5 ns), eliminating pipeline stalls in high-speed packet forwarding paths.
Single Late Write Architecture	Accepts write data one clock edge after address/control setup, simplifying timing closure in systems with skewed data paths relative to address/control.
Individual Byte Write Control	Four independent BW# signals enable 9-bit granularity writes without disturbing adjacent bytes-critical for header modification in networking ASICs.
Configurable Burst Sequence	LBO# pin selects linear or interleaved burst order to match specific switch fabric or DMA controller addressing expectations.
Snooze Mode with Data Retention	Reduces active current from 260 mA to 30 mA while preserving all stored data-supports energy-efficient traffic-aware buffering in carrier-grade equipment.
Three-Chip-Enable Depth Expansion	E1#, E2, E3# support stacking multiple devices for wider or deeper memory configurations without external logic, easing scalability in modular designs.

Applications

Layer 2/Layer 3 Switch Buffering	High-Speed Router Packet Memory
Use Scenario: Storing ingress/egress packet headers and metadata in multi-gigabit Ethernet switching ASICs. IC Role / Device Role / Timing Role: Synchronous SRAM providing deterministic 8.5 ns read latency and burst-aligned write capability for cut-through forwarding engines. Use Value: Enables line-rate processing of 10 Gbps+ traffic by eliminating read-modify-write cycles through byte-selectable writes and flow-through read timing.	Use Scenario: Acting as shared buffer memory for distributed forwarding engines in modular core routers. IC Role / Device Role / Timing Role: High-bandwidth, low-latency memory supporting concurrent read/write bursts across multiple ports via three chip enables. Use Value: Supports simultaneous packet buffering for up to four 10G interfaces using depth-expanded configurations without external arbitration logic.
Telecom Line Card Buffering	Network Processor Co-Processor Memory
Use Scenario: Temporary storage of ATM cells or MPLS labels in carrier-class line cards requiring >70°C ambient operation. IC Role / Device Role / Timing Role: Temperature-rated (0–70°C) SRAM with snooze mode for dynamic power scaling during low-traffic periods. Use Value: Reduces thermal load by 78% (260 mA → 30 mA) during idle intervals while maintaining instant data availability upon traffic resumption.	Use Scenario: Offloading packet classification and lookup table storage from main network processor cores. IC Role / Device Role / Timing Role: Dedicated 36-bit-wide memory with separate VDDQ allowing direct connection to 2.5 V NPU I/O banks. Use Value: Eliminates level-shifting components and associated signal integrity degradation in high-frequency memory interfaces.

Layer 2/Layer 3 Switch Buffering

High-Speed Router Packet Memory

Use Scenario: Storing ingress/egress packet headers and metadata in multi-gigabit Ethernet switching ASICs.

IC Role / Device Role / Timing Role: Synchronous SRAM providing deterministic 8.5 ns read latency and burst-aligned write capability for cut-through forwarding engines.

Use Value: Enables line-rate processing of 10 Gbps+ traffic by eliminating read-modify-write cycles through byte-selectable writes and flow-through read timing.

Use Scenario: Acting as shared buffer memory for distributed forwarding engines in modular core routers.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency memory supporting concurrent read/write bursts across multiple ports via three chip enables.

Use Value: Supports simultaneous packet buffering for up to four 10G interfaces using depth-expanded configurations without external arbitration logic.

Telecom Line Card Buffering

Network Processor Co-Processor Memory

Use Scenario: Temporary storage of ATM cells or MPLS labels in carrier-class line cards requiring >70°C ambient operation.

IC Role / Device Role / Timing Role: Temperature-rated (0–70°C) SRAM with snooze mode for dynamic power scaling during low-traffic periods.

Use Value: Reduces thermal load by 78% (260 mA → 30 mA) during idle intervals while maintaining instant data availability upon traffic resumption.

Use Scenario: Offloading packet classification and lookup table storage from main network processor cores.

IC Role / Device Role / Timing Role: Dedicated 36-bit-wide memory with separate VDDQ allowing direct connection to 2.5 V NPU I/O banks.

Use Value: Eliminates level-shifting components and associated signal integrity degradation in high-frequency memory interfaces.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous network SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1362BV33-100AXC	1-Mbit (256K × 36) density, 10 ns access, 100-pin TQFP, but lacks snooze mode and separate VDDQ; uses single 3.3 V supply for core and I/O.	Lower density limits use in large-buffer applications; absence of snooze mode increases idle power in bursty traffic scenarios.	Select when cost sensitivity outweighs power efficiency and buffer depth requirements; verify timing margins with CY7C1362BV33-100AXC's longer tKHQV (10 ns).
IS61WV102436BLL-10BLI	1-Mbit (256K × 36) density, 10 ns access, 100-pin TQFP, supports 2.5 V/3.3 V I/O via VDDQ but no snooze mode or ADV-controlled burst advance.	Requires external logic for burst address generation; no low-power standby state-unsuitable for energy-constrained telecom platforms.	Prefer for legacy designs already using ISSI's timing model; avoid where ADV-based burst control or ZZ-driven power gating is required.

Compared with CY7C1362BV33-100AXC and IS61WV102436BLL-10BLI, the M5M5V5A36GP-85#B0 offers higher density (18.87 Mbit vs. 1 Mbit), integrated snooze mode for 90% standby current reduction, and ADV-driven burst sequencing-making it uniquely suited for next-generation high-throughput, thermally constrained networking hardware.

Availability

M5M5V5A36GP-85#B0 is available at Aetrix Electronics and suitable for high-end networking equipment, carrier-grade telecom line cards, and modular router architectures requiring stable component supply, long-term lifecycle support, and guaranteed RoHS-compliant sourcing.

Supply support for M5M5V5A36GP-85#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The M5M5V5A36GP-85#B0 belongs to Renesas' legacy high-speed network SRAM product line, designed specifically for deterministic, low-latency packet buffering in enterprise and carrier-class switching and routing infrastructure.

FAQ

What is the maximum clock frequency supported by the M5M5V5A36GP-85#B0?

The M5M5V5A36GP-85#B0 supports a minimum clock cycle time of 10 ns, corresponding to a maximum operating frequency of 100 MHz. This is derived from the tKHKH parameter in the AC Electrical Characteristics table (Rev.1.0, p.12), where -85 grade specifies 10 ns min cycle time under standard operating conditions (Ta = 0–70°C, VDD = 3.135–3.465 V). The device must meet all associated setup/hold timing windows at this rate.

Does the M5M5V5A36GP-85#B0 support both 2.5 V and 3.3 V I/O interfaces simultaneously?

Yes, the M5M5V5A36GP-85#B0 supports selectable I/O voltage via the VDDQ pin: it accepts either 2.375–2.625 V (for 2.5 V systems) or 3.135–3.465 V (for 3.3 V systems), as specified in the DC Electrical Characteristics table (p.10). Core logic remains at 3.3 V (VDD), enabling interoperability with mixed-voltage FPGAs or ASICs without level shifters.

How does the ADV pin function in burst read versus burst write operations for the M5M5V5A36GP-85#B0?

In both burst read and write operations, the ADV pin controls address progression: when ADV is LOW, the external address is loaded on the next CLK rising edge; when ADV is HIGH, the internal burst counter advances to the next sequential address. This behavior is identical for reads and writes, as confirmed in the PIN FUNCTION section (p.4) and TRUTH TABLE (p.7), where ADV state directly governs whether a new address is latched or the burst continues.

Can the M5M5V5A36GP-85#B0 retain data during snooze mode, and what is the current draw?

Yes, the M5M5V5A36GP-85#B0 retains all stored data during snooze mode, activated by driving the ZZ pin HIGH. In this state, ICC4 is specified at 30 mA maximum (p.10, DC Electrical Characteristics), representing a 88% reduction from active operating current (260 mA max). Data retention is guaranteed across the full operating temperature range (0–70°C).

What is the purpose of the LBO# pin on the M5M5V5A36GP-85#B0, and how must it be configured?

The LBO# pin selects burst addressing mode: LOW configures linear burst sequence; HIGH or NC configures interleaved burst sequence. As stated in the PIN FUNCTION table (p.4) and BURST SEQUENCE TABLE (p.7), LBO# is a DC-operated pin that must remain static during normal operation (Note 28, p.12). It cannot toggle mid-burst and requires stable biasing-either pulled to VDDQ (for interleaved) or grounded (for linear).

M5M5V5A36GP-85#B0 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

Programmable:: Not Verified

Memory Type:: -

Memory Format:: -

Technology:: -

Memory Size:: -

Memory Organization:: -

Memory Interface:: -

Clock Frequency:: -

Write Cycle Time - Word, Page:: -

Access Time:: -

Voltage - Supply:: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

M5M5V5A36GP-85#B0 FAQ

1.How can I place an order for M5M5V5A36GP-85#B0 through Aetrix?

Please submit a Request for Quotation (RFQ) for M5M5V5A36GP-85#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of M5M5V5A36GP-85#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M5M5V5A36GP-85#B0 is usually 5 days.

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5.How can I obtain technical support or documentation for M5M5V5A36GP-85#B0?

For technical support, including M5M5V5A36GP-85#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M5M5V5A36GP-85#B0 requirements.

6.How does Aetrix verify that M5M5V5A36GP-85#B0 is sourced from the original manufacturer or authorized distributors?

All M5M5V5A36GP-85#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M5M5V5A36GP-85#B0 meets industry standards.

7.What is the process for return or replacement of M5M5V5A36GP-85#B0?

All M5M5V5A36GP-85#B0 units undergo pre-shipment inspection (PSI). If there is an issue with M5M5V5A36GP-85#B0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The M5M5V5A36GP-85#B0 part is unused and in its original packaging.

Return procedure for M5M5V5A36GP-85#B0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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