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Renesas M5M5W816TP-55HI#ST
- Part No.:
- M5M5W816TP-55HI#ST
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
M5M5W816TP-55HI#ST.pdf
- Description:
- STANDARD SRAM, 512KX16, 55NS
- Quantity:
- Payment:
- Shipping:
Inventory:1,759
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Product details
Overview
M5M5W816TP-55HI#ST from Renesas Technology Corp. is a 8-Mbit (524,288 × 16-bit) CMOS static RAM with single 2.7–3.6 V supply, 55 ns access time at 3.0 V, and 0.1 µA standby current (25°C, typical). It features TTL-compatible I/O, no refresh requirement, and data retention down to 2.0 V - optimized for battery-backed memory in portable instrumentation and low-power embedded controllers.
For engineers reviewing the M5M5W816TP-55HI#ST datasheet, M5M5W816TP-55HI#ST pinout, M5M5W816TP-55HI#ST application, or M5M5W816TP-55HI#ST equivalent, key selection criteria include byte-selectable I/O (BC1#/BC2#), OR-tie capable three-state outputs, S1#/S2# chip select flexibility, and CSP package compatibility with high-density PCB layouts.
Technical Context
The M5M5W816TP-55HI#ST implements a fully static memory array with no clocks or refresh circuitry, enabling deterministic timing across all operating modes. Its control logic supports four distinct write/read enable configurations via S1#, S2, BC1#, BC2#, W#, and OE#, allowing byte-level granularity and multi-chip expansion without external logic.
Power management is handled through dual standby states: standard standby (Icc4 = 0.1 µA typ.) and power-down mode (VCC(PD) ≥ 2.0 V), where data retention is guaranteed even during brownout conditions. All inputs meet TTL voltage thresholds (VIL = 0.4 V, VIH = 2.4 V), and outputs drive ±1 mA with VOH ≥ 2.2 V and VOL ≤ 0.4 V at VCC = 3.0 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 8,388,608-bit (524,288 words × 16-bit) - supports 16-bit parallel bus interfaces without external data multiplexing. |
| Access Time | 55 ns max at VCC = 3.0 V - enables direct interface with microcontrollers running at ≤18 MHz system clock (e.g., Renesas H8/300H). |
| Supply Voltage | 2.7–3.6 V - compatible with Li-ion battery systems (3.0–3.3 V nominal) and regulated 3.3 V rails without level-shifting. |
| Standby Current | 0.1 µA typical at 25°C - extends battery life in always-on backup memory applications beyond 10 years. |
| Data Retention Voltage | 2.0 V minimum - maintains stored content during deep sleep or main power loss, critical for real-time clock + SRAM modules. |
| Input Compatibility | TTL-compatible (VIL ≤ 0.4 V, VIH ≥ 2.4 V) - eliminates need for bus interface translators when connecting to legacy 5 V logic with pull-up/down biasing. |
| Output Drive | Three-state, OR-tie capable - allows direct wire-OR connection of multiple devices on shared data buses without contention. |
Pinout & Package
Package: 48-ball CSP (chip scale package), 7.5 mm × 8.5 mm outline, 0.75 mm ball pitch (48F7Q footprint). Ball E3 must not be connected to any voltage > 0 V.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Input | 19-bit address bus supporting full 524,288-word addressing; no internal address latching required. |
| DQ1–DQ16 | Data I/O | 16-bit bidirectional common data bus; three-state controlled by OE#, S1#, S2, and BC1#/BC2#. |
| S1#, S2 | Chip Select Inputs | Active-low S1# and active-high S2 enable hierarchical chip selection; S2 = L forces non-selection regardless of other controls. |
| BC1#, BC2# | Byte Control Inputs | Active-low BC1# enables lower byte (DQ1–DQ8); BC2# enables upper byte (DQ9–DQ16); both high disables I/O. |
| W# | Write Enable | Active-low write strobe; write occurs only when W# overlaps active S1#/S2 and active BC1# or BC2#. |
| OE# | Output Enable | Active-low gate for output drivers; prevents bus contention during read cycles and ensures high-Z state when inactive. |
| VCC, GND | Power Supply | Single 2.7–3.6 V supply; two VCC and two GND balls provide low-inductance decoupling for noise-sensitive operation. |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Fully static architecture eliminates DRAM-style refresh overhead and timing constraints - simplifies firmware and reduces CPU load. |
| Battery backup support | Operates and retains data down to 2.0 V supply - enables seamless transition to coin-cell backup during main power failure. |
| Byte-selectable I/O | Independent BC1# and BC2# control allow simultaneous or selective access to lower/upper 8-bit bytes - ideal for mixed-width peripheral interfacing. |
| OR-tie capable outputs | Three-state outputs with defined high-impedance behavior permit wired-OR expansion of multiple SRAMs on same data bus without external logic. |
| Low-power standby | 0.1 µA typical standby current at 25°C - meets stringent energy budgets for battery-powered data loggers and portable medical devices. |
Applications
| Industrial Data Logger | Portable Medical Monitor |
|---|---|
|
Use Scenario: Continuous acquisition of sensor data (ECG, SpO₂, temperature) with timestamped storage during battery-only operation. IC Role / Device Role / Timing Role: Non-volatile buffer memory holding up to 512 KB of raw waveform data before host transfer; retains content during power cycling. Use Value: Enables 72+ hours of uninterrupted logging on a single CR2032 cell due to 0.1 µA standby draw and 2.0 V data retention threshold. |
Use Scenario: Real-time display buffering and alarm history storage in handheld patient monitors with intermittent USB host connection. IC Role / Device Role / Timing Role: Primary working memory for display frame buffers and event logs; interfaces directly to 16-bit MCU bus with zero wait states at 55 ns access. Use Value: Eliminates external level shifters and refresh timers, reducing BOM count and PCB area while meeting IEC 60601-1 leakage current limits. |
| Smart Meter Firmware Cache | Automotive Diagnostic Tool |
|
Use Scenario: Storing firmware update images and calibration tables in electricity/water meters powered by supercapacitors. IC Role / Device Role / Timing Role: High-reliability code/data cache accessible during brief power windows; withstands 100k+ write cycles per location. Use Value: Supports secure over-the-air updates with verified integrity checks using full 16-bit parallel access - cuts update time by 40% vs. serial EEPROM. |
Use Scenario: Temporary storage of OBD-II diagnostic codes, vehicle parameter snapshots, and session logs in handheld scan tools. IC Role / Device Role / Timing Role: Fast-access scratchpad memory for protocol translation engines (CAN-to-USB); operates across -40°C to +85°C ambient range. Use Value: Guarantees data persistence during engine cranking dips (VBAT < 6 V) via 2.0 V retention - prevents loss of critical fault records. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV8320AL-10TLI | 32-bit bus width (1M × 32), 10 ns access, 3.3 V only, TSOP-86 package | Higher bandwidth but larger footprint; lacks byte-select and 2.0 V retention | Select when 32-bit data path and sub-10 ns timing are required; avoid if battery backup or space-constrained CSP is mandatory. |
| AS6C8016-55TIN | Same 512K × 16 organization, 55 ns access, 2.7–3.6 V, 48-ball CSP, but 1 µA standby (10× higher) | Compatible pinout and timing, but higher leakage compromises long-term battery life | Acceptable for AC-powered or short-duration portable use; not recommended for >1-year unattended operation. |
Compared with IS61LV8320AL-10TLI and AS6C8016-55TIN, the M5M5W816TP-55HI#ST uniquely combines ultra-low standby current (0.1 µA), 2.0 V data retention, and 48-ball CSP in a 16-bit configuration - making it the only option qualified for decade-scale battery-backed memory in sealed industrial enclosures.
Availability
M5M5W816TP-55HI#ST is available at Aetrix Electronics and suitable for industrial data loggers, portable medical monitors, smart meter firmware caches, automotive diagnostic tools, and battery-backed real-time systems requiring stable component supply across extended product lifecycles.
Supply support for M5M5W816TP-55HI#ST includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Technology Corp. (now part of Renesas Electronics Corporation) is a Japanese semiconductor manufacturer formed in 2003 through the merger of Hitachi and Mitsubishi Electric's semiconductor operations, specializing in microcontrollers, analog, power, and memory solutions.
The M5M5W816TP-55HI#ST belongs to Renesas' legacy low-voltage CMOS SRAM product line, designed specifically for space-constrained, battery-operated embedded systems requiring deterministic timing, zero-refresh operation, and robust data retention under voltage stress.
FAQ
What is the maximum operating temperature range for the M5M5W816TP-55HI#ST?
The M5M5W816TP-55HI#ST is rated for industrial temperature operation from –40°C to +85°C, as indicated by the "I" grade suffix in its part number. This range is validated per the device's DC and AC electrical specifications in the original Mitsubishi/Renesas datasheet Ver. 6.0, and applies to all timing and current parameters including 55 ns access time and 0.1 µA standby current.
Does the M5M5W816TP-55HI#ST require an external clock or refresh signal?
No, the M5M5W816TP-55HI#ST is a fully static RAM and requires no external clock or refresh signal. Its internal circuitry maintains data indefinitely as long as VCC remains within 2.0–3.6 V, eliminating timing-critical refresh cycles and simplifying system design - a core feature confirmed in the "No clocks, No refresh" section of the M5M5W816WG datasheet.
Can the M5M5W816TP-55HI#ST be used with a 2.5 V supply?
No, the M5M5W816TP-55HI#ST is specified only for 2.7–3.6 V operation. While data retention is guaranteed down to 2.0 V, functional operation (read/write) is not characterized below 2.7 V. Attempting 2.5 V operation may result in timing violations, increased bit errors, or failure to meet the 55 ns access specification - per Absolute Maximum Ratings and DC Electrical Characteristics tables.
What is the ball pitch and footprint compatibility of the M5M5W816TP-55HI#ST CSP package?
The M5M5W816TP-55HI#ST uses a 48-ball CSP with 0.75 mm ball pitch and 7.5 mm × 8.5 mm outline (48F7Q). Its footprint matches JEDEC MO-245 standards for 48-ball CSPs. Ball E3 is NC or GND but must not be biased above 0 V - a constraint explicitly called out in the Pin Configuration diagram and Power Down Characteristics section of the datasheet.
How does byte control (BC1# and BC2#) function during read and write operations on the M5M5W816TP-55HI#ST?
BC1# and BC2# are active-low byte enable signals: BC1# = L enables DQ1–DQ8 (lower byte); BC2# = L enables DQ9–DQ16 (upper byte). During reads, only enabled bytes drive the bus; during writes, only enabled bytes accept data. Both high places the device in non-selection mode - a behavior fully documented in the Function Table and Timing Diagrams of the M5M5W816WG datasheet.
M5M5W816TP-55HI#ST Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Single Port, Asynchronous
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
M5M5W816TP-55HI#ST FAQ
1.How can I place an order for M5M5W816TP-55HI#ST through Aetrix?
Please submit a Request for Quotation (RFQ) for M5M5W816TP-55HI#ST on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M5M5W816TP-55HI#ST reliable?
The price and inventory of M5M5W816TP-55HI#ST are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M5M5W816TP-55HI#ST is usually 5 days.
3.What payment methods are accepted for M5M5W816TP-55HI#ST?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M5M5W816TP-55HI#ST transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M5M5W816TP-55HI#ST?
M5M5W816TP-55HI#ST orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M5M5W816TP-55HI#ST order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M5M5W816TP-55HI#ST?
For technical support, including M5M5W816TP-55HI#ST datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M5M5W816TP-55HI#ST requirements.
6.How does Aetrix verify that M5M5W816TP-55HI#ST is sourced from the original manufacturer or authorized distributors?
All M5M5W816TP-55HI#ST products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M5M5W816TP-55HI#ST meets industry standards.
7.What is the process for return or replacement of M5M5W816TP-55HI#ST?
All M5M5W816TP-55HI#ST units undergo pre-shipment inspection (PSI). If there is an issue with M5M5W816TP-55HI#ST, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M5M5W816TP-55HI#ST part is unused and in its original packaging.
Return procedure for M5M5W816TP-55HI#ST:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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