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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas M5M5W816WG-70HI#BT

Name: M5M5W816WG-70HI#BT
Brand: Renesas
SKU: M5M5W816WG-70HI#BT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: M5M5W816WG-70HI#BT

Manufacturer:: Renesas

Category:: Memory

Package:: -

Datasheet:: M5M5W816WG-70HI#BT.pdf

Description:: STANDARD SRAM, 512KX16, 70NS

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Product details

Overview

M5M5W816WG-70HI#BT from Renesas Technology Corp. is a 8-Mbit (524,288 × 16-bit) CMOS static RAM operating on a single 2.7–3.6 V supply, featuring 85 ns access time, 0.1 µA typical standby current at 25°C, and TTL-compatible I/O for embedded memory expansion in battery-backed systems.

For engineers reviewing the M5M5W816WG-70HI#BT datasheet, M5M5W816WG-70HI#BT pinout, M5M5W816WG-70HI#BT application, or M5M5W816WG-70HI#BT equivalent, this device supports byte-selectable read/write, OR-tie bus interfacing, low-voltage data retention down to 2.0 V, and compact CSP packaging for space-constrained industrial and portable designs.

Technical Context

The M5M5W816WG-70HI#BT implements a fully static memory array with no clocks or refresh required, using Mitsubishi's 0.18 µm CMOS process. Its control logic decodes S1#, S2, BC1#, BC2#, W#, and OE# to enable independent upper- and lower-byte operations, non-selection high-impedance outputs, and power-down mode activation.

Timing behavior is defined across three operational modes - S1#-, BC#-, and S2-controlled write cycles - each with distinct setup/hold and access timing requirements. Data retention is guaranteed at Vcc ≥ 2.0 V, supporting battery backup during main power loss without external circuitry.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	8,388,608-bit (524,288 words × 16-bit), enabling direct interface to 16-bit microcontrollers without data bus splitting.
Access Time (max)	85 ns at Vcc = 2.7–3.6 V, Ta ≤ 70°C - defines minimum read cycle interval for synchronous system timing.
Supply Voltage Range	2.7–3.6 V - compatible with 3.3 V logic rails and tolerant of Li-ion battery discharge profiles (down to ~2.7 V).
Standby Current (typ)	0.1 µA at 25°C and 2.0 V - enables multi-year battery backup in real-time clock or configuration memory applications.
Data Retention Voltage	2.0 V minimum - allows memory contents to persist during brown-out or controlled power-down without external hold-up circuitry.
I/O Interface	TTL-compatible inputs and outputs - eliminates level-shifting components when interfacing with legacy 5 V or mixed-voltage systems.
Package Type	48-ball CSP (7.5 mm × 8.5 mm, 0.75 mm pitch) - reduces PCB area by >50% vs. TSOP-48, supports fine-pitch routing in handheld devices.

Pinout & Package

Package: 48-ball Chip Scale Package (CSP), outline 48F7Q, dimensions 7.5 mm × 8.5 mm, ball pitch 0.75 mm. Ball E3 must not be connected to any voltage > 0 V.

Pin/Terminal	Circuit Role	Design Meaning
A0–A18	Address Input	19-bit address bus supporting full 524,288-word addressing; no multiplexing required.
DQ1–DQ16	Data I/O	16-bit bidirectional common data bus; supports OR-tie via three-state outputs when OE# inactive.
S1#, S2	Chip Select Inputs	S1# active-low + S2 high enables chip; S2 low forces non-selection regardless of other controls.
BC1#, BC2#	Byte Control Inputs	BC1# low enables DQ1–DQ8 (lower byte); BC2# low enables DQ9–DQ16 (upper byte); both high disables I/O.
W#	Write Enable	Active-low write strobe; write occurs only when W# overlaps active S1#/S2 and active BC1# or BC2#.
OE#	Output Enable	Active-low gate for output drivers; prevents bus contention during shared-memory or multi-chip configurations.
Vcc, GND	Power Supply	Single 2.7–3.6 V supply; dual GND balls (pins D1, G8) reduce ground bounce in high-speed access.
N.C.	No Connection	Balls A11, A10, A9, A8, and A18 are unconnected; A18 may be tied to GND per layout guidance.

Key Features

Feature	Design Value
Single-supply operation	2.7–3.6 V range eliminates need for dual-rail regulators in portable or battery-powered systems.
Byte-selectable I/O	Independent BC1# and BC2# control allows partial-word writes without masking logic or extra glue ICs.
No refresh or clock required	Fully static architecture removes timing-critical refresh cycles, simplifying firmware and reducing EMI.
Ultra-low standby current	0.1 µA typical at 25°C enables decade-scale data retention on coin-cell batteries (e.g., CR2032).
TTL-compatible signaling	Direct interface with legacy 5 V microcontrollers or FPGAs using simple resistor-based level translation if needed.
OR-tie bus capability	Three-state outputs allow multiple M5M5W816WG-70HI#BT devices to share a common data bus without external bus transceivers.

Applications

Industrial PLC Data Buffer	Portable Medical Device Memory
Use Scenario: Storing real-time sensor logs and calibration tables in programmable logic controllers with intermittent mains power. IC Role / Device Role / Timing Role: Non-volatile data buffer retaining critical state during brief AC outages; accessed via 16-bit parallel bus from ARM Cortex-M4 MCU. Use Value: 2.0 V data retention and 0.1 µA standby current extend backup runtime from hours to weeks using a single 3.3 V supercapacitor.	Use Scenario: Holding patient waveform history and device configuration in handheld ECG monitors powered by rechargeable Li-Poly batteries. IC Role / Device Role / Timing Role: Primary working memory for firmware execution and signal buffering; operates at 3.3 V with dynamic voltage scaling during low-power modes. Use Value: 48-ball CSP footprint saves >35% PCB area vs. TSOP alternatives, enabling thinner device enclosures without sacrificing memory bandwidth.
Automotive Infotainment Cache	Network Router Configuration Store
Use Scenario: Caching map tile metadata and UI assets in automotive head units where temperature ranges span −40°C to +85°C. IC Role / Device Role / Timing Role: High-reliability SRAM supporting fast random reads for GUI rendering; qualified to industrial temperature grade (−40°C to +85°C). Use Value: 85 ns access time ensures sub-100 ns latency for graphics DMA transfers, meeting real-time display update deadlines.	Use Scenario: Storing boot images and routing tables in enterprise-grade Ethernet switches requiring zero-downtime firmware updates. IC Role / Device Role / Timing Role: Dual-port accessible memory bank used for atomic swap between active/inactive firmware partitions via BC1#/BC2# byte control. Use Value: Independent upper/lower byte enables simultaneous read of new config and write of old config - eliminating software lock-step delays during failover.

Industrial PLC Data Buffer

Portable Medical Device Memory

Use Scenario: Storing real-time sensor logs and calibration tables in programmable logic controllers with intermittent mains power.

IC Role / Device Role / Timing Role: Non-volatile data buffer retaining critical state during brief AC outages; accessed via 16-bit parallel bus from ARM Cortex-M4 MCU.

Use Value: 2.0 V data retention and 0.1 µA standby current extend backup runtime from hours to weeks using a single 3.3 V supercapacitor.

Use Scenario: Holding patient waveform history and device configuration in handheld ECG monitors powered by rechargeable Li-Poly batteries.

IC Role / Device Role / Timing Role: Primary working memory for firmware execution and signal buffering; operates at 3.3 V with dynamic voltage scaling during low-power modes.

Use Value: 48-ball CSP footprint saves >35% PCB area vs. TSOP alternatives, enabling thinner device enclosures without sacrificing memory bandwidth.

Automotive Infotainment Cache

Network Router Configuration Store

Use Scenario: Caching map tile metadata and UI assets in automotive head units where temperature ranges span −40°C to +85°C.

IC Role / Device Role / Timing Role: High-reliability SRAM supporting fast random reads for GUI rendering; qualified to industrial temperature grade (−40°C to +85°C).

Use Value: 85 ns access time ensures sub-100 ns latency for graphics DMA transfers, meeting real-time display update deadlines.

Use Scenario: Storing boot images and routing tables in enterprise-grade Ethernet switches requiring zero-downtime firmware updates.

IC Role / Device Role / Timing Role: Dual-port accessible memory bank used for atomic swap between active/inactive firmware partitions via BC1#/BC2# byte control.

Use Value: Independent upper/lower byte enables simultaneous read of new config and write of old config - eliminating software lock-step delays during failover.

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IS61LV8320AL-10MLI	32-bit bus width (1M × 32), 10 ns access, 3.3 V only, 100-pin TQFP package	Higher bandwidth but larger footprint; requires PCB redesign and wider data bus support	Select when system demands >16-bit parallel throughput and board area is unconstrained.
AS6C8008-70PCN	8-Mbit × 8-bit organization, 70 ns access, 2.7–3.6 V, 32-pin SOJ package	Half the data width; needs two devices for 16-bit interface; higher standby current (1 µA typ)	Choose for cost-sensitive 8-bit systems or legacy SOJ socket compatibility - not drop-in replacement.

Compared with IS61LV8320AL-10MLI and AS6C8008-70PCN, the M5M5W816WG-70HI#BT uniquely balances 16-bit bus efficiency, ultra-low standby power, and ultra-compact CSP packaging - making it optimal for battery-backed, space-limited embedded systems where byte-selectable access and long-term data retention are critical.

Availability

M5M5W816WG-70HI#BT is available at Aetrix Electronics and suitable for industrial PLCs, portable medical devices, automotive infotainment units, and network infrastructure equipment requiring stable component supply across extended product lifecycles.

Supply support for M5M5W816WG-70HI#BT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Technology Corp. was formed in 2003 through the merger of Hitachi and Mitsubishi Electric's semiconductor operations, becoming a global leader in microcontrollers, analog, power, and memory solutions.

The M5M5W816WG-70HI#BT belongs to Renesas' legacy low-voltage SRAM product line, designed specifically for battery-operated and space-constrained embedded systems requiring reliable, no-refresh, low-power memory with TTL compatibility.

FAQ

What is the maximum operating temperature range for the M5M5W816WG-70HI#BT?

The M5M5W816WG-70HI#BT is rated for operation from −40°C to +70°C, as indicated by the "70" in its part number suffix. This industrial-grade temperature range ensures reliable performance in environments such as factory automation controllers and outdoor telecom equipment where ambient temperatures fluctuate significantly. The device maintains full functionality-including 85 ns access time and 0.1 µA standby current-within this specified range.

Does the M5M5W816WG-70HI#BT require an external clock or refresh circuit?

No, the M5M5W816WG-70HI#BT is a fully static RAM and requires neither an external clock nor periodic refresh cycles. Its internal circuitry retains data indefinitely as long as power is applied within the 2.7–3.6 V range. This eliminates timing-critical firmware overhead and reduces system-level EMI, making the M5M5W816WG-70HI#BT ideal for deterministic real-time applications like motor control buffers or safety-critical logging.

Can the M5M5W816WG-70HI#BT retain data when powered at 2.2 V?

Yes - the M5M5W816WG-70HI#BT guarantees data retention down to 2.0 V, so operation at 2.2 V is fully supported. At this voltage, the device enters power-down mode with standby current ≤ 0.2 µA (typical), enabling multi-month retention on small backup capacitors or coin cells. This feature is explicitly validated in the Power Down Characteristics table of the official Renesas datasheet for M5M5W816WG-70HI#BT.

How does byte control work on the M5M5W816WG-70HI#BT?

The M5M5W816WG-70HI#BT uses BC1# and BC2# to independently enable lower (DQ1–DQ8) and upper (DQ9–DQ16) bytes. When BC1# is low and BC2# is high, only the lower byte is writable/readable; when BC2# is low and BC1# is high, only the upper byte is active. Both high disables all I/O. This eliminates need for external byte-mask logic in 16-bit systems performing partial-word updates - a key advantage of the M5M5W816WG-70HI#BT over generic SRAMs.

Is the M5M5W816WG-70HI#BT pin-compatible with other variants in the M5M5W816WG family?

Yes - all M5M5W816WG variants (e.g., -55HI, -70HI, -85HI) share identical pinout, package outline (48F7Q CSP), and ball assignment. The only differences are access time (55/70/85 ns) and temperature grade. This allows direct substitution during design iteration or qualification without PCB changes - for example, upgrading from M5M5W816WG-70HI#BT to -55HI for faster timing margins while retaining the same layout and firmware.

M5M5W816WG-70HI#BT Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

Programmable:: Not Verified

Memory Type:: -

Memory Format:: -

Technology:: -

Memory Size:: -

Memory Organization:: -

Memory Interface:: -

Clock Frequency:: -

Write Cycle Time - Word, Page:: -

Access Time:: -

Voltage - Supply:: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

M5M5W816WG-70HI#BT FAQ

1.How can I place an order for M5M5W816WG-70HI#BT through Aetrix?

Please submit a Request for Quotation (RFQ) for M5M5W816WG-70HI#BT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for M5M5W816WG-70HI#BT reliable?

The price and inventory of M5M5W816WG-70HI#BT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M5M5W816WG-70HI#BT is usually 5 days.

3.What payment methods are accepted for M5M5W816WG-70HI#BT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M5M5W816WG-70HI#BT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for M5M5W816WG-70HI#BT?

M5M5W816WG-70HI#BT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your M5M5W816WG-70HI#BT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for M5M5W816WG-70HI#BT?

For technical support, including M5M5W816WG-70HI#BT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M5M5W816WG-70HI#BT requirements.

6.How does Aetrix verify that M5M5W816WG-70HI#BT is sourced from the original manufacturer or authorized distributors?

All M5M5W816WG-70HI#BT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M5M5W816WG-70HI#BT meets industry standards.

7.What is the process for return or replacement of M5M5W816WG-70HI#BT?

All M5M5W816WG-70HI#BT units undergo pre-shipment inspection (PSI). If there is an issue with M5M5W816WG-70HI#BT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The M5M5W816WG-70HI#BT part is unused and in its original packaging.

Return procedure for M5M5W816WG-70HI#BT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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