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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas M5M5W816WG-70HI#ST

Name: M5M5W816WG-70HI#ST
Brand: Renesas
SKU: M5M5W816WG-70HI#ST
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: M5M5W816WG-70HI#ST

Manufacturer:: Renesas

Category:: Memory

Package:: -

Datasheet:: M5M5W816WG-70HI#ST.pdf

Description:: STANDARD SRAM, 512KX16, 55NS

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Product details

Overview

M5M5W816WG-70HI#ST from Renesas Technology Corp. is a 8-Mbit (524,288 × 16-bit) CMOS static RAM with single 2.7–3.6 V supply, 70 ns access time, and 0.1 µA standby current at 25°C - designed for low-power memory applications requiring battery backup, compact PCB layout, and TTL-compatible interfacing in portable or embedded systems.

For engineers reviewing the M5M5W816WG-70HI#ST datasheet, M5M5W816WG-70HI#ST pinout, M5M5W816WG-70HI#ST application, or M5M5W816WG-70HI#ST equivalent, key selection criteria include its 48-ball CSP package (7.5 mm × 8.5 mm), byte-selectable 16-bit I/O, no-refresh operation, 2.0 V data retention voltage, and compatibility with S1#/S2/BC1#/BC2# memory expansion control.

Technical Context

The M5M5W816WG-70HI#ST implements a fully static memory architecture with no clocks or refresh cycles, enabling deterministic timing and ultra-low power retention. Its dual-byte control (BC1#, BC2#) and dual chip select (S1#, S2) support flexible memory expansion and partial-word access without external logic.

It operates in three primary modes: active read/write (with OE# and W# coordination), standby (high-impedance outputs, <0.1 µA ICC4), and power-down (VCC ≥2.0 V, data retention). All inputs and outputs are TTL-compatible, and the device supports OR-tie capability via three-state outputs.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	8,388,608-bit (524,288 words × 16-bit) - supports 16-bit data bus systems without external multiplexing.
Access Time	70 ns max at VCC = 2.7–3.6 V - enables reliable interface with microcontrollers and FPGAs operating up to ~10 MHz.
Supply Voltage	2.7–3.6 V single supply - compatible with 3.3 V logic rails and battery-backed systems down to 2.0 V for data retention.
Standby Current	0.1 µA typical at 25°C and 2.0 V - enables multi-year battery backup in SRAM-based real-time clocks or configuration storage.
Package	48-ball CSP, 7.5 mm × 8.5 mm, 0.75 mm pitch - reduces PCB area by >50% vs. TSOP-48 and improves routing flexibility.
I/O Interface	Common DQ1–DQ16 bidirectional bus with TTL-compatible input thresholds (VIH = 2.4 V, VIL = 0.4 V) - eliminates level-shifting in 3.3 V systems.
Control Logic	S1#, S2, BC1#, BC2#, W#, OE# - enables independent upper/lower byte access and hierarchical chip selection for multi-SRAM systems.

Pinout & Package

Package: 48-ball Chip Scale Package (CSP), outline 48F7Q, dimensions 7.5 mm × 8.5 mm, ball pitch 0.75 mm. E3 ball must not be connected to voltage >0 V.

Pin/Terminal	Circuit Role	Design Meaning
A0–A18	Address Input	19-bit address bus supporting full 524,288-word addressing; no address multiplexing required.
DQ1–DQ16	Data I/O	Bidirectional 16-bit common bus; three-state outputs enable OR-tie and bus sharing with other devices.
S1#, S2	Chip Select Inputs	S1# active low + S2 high enables chip; S2 high/low selects hierarchical enable mode per function table.
BC1#, BC2#	Byte Control Inputs	BC1# low enables DQ1–DQ8 (lower byte); BC2# low enables DQ9–DQ16 (upper byte); both high disables I/O.
W#	Write Enable	Active-low write strobe; write occurs only when W# overlaps active S1#/S2 and BC1#/BC2# states.
OE#	Output Enable	Active-low control of output drivers; prevents bus contention during shared-memory read operations.
VCC, GND	Power/Ground	Single 2.7–3.6 V supply; dual GND balls (pins E3, G7) reduce noise coupling in high-speed reads.
N.C.	No Connection	Balls A11, A10, A9, A8, and A18 (marked NC or GND) are unconnected or reserved; A18 may be tied to GND per layout guidance.

Key Features

Feature	Design Value
No clock, no refresh	Fully static CMOS design eliminates timing-critical refresh cycles and simplifies system-level timing budget.
2.0 V data retention	Retains stored data down to 2.0 V supply - enables seamless transition to coin-cell backup during main power loss.
Byte-selectable I/O	Independent BC1# and BC2# controls allow 8-bit partial writes/reads without disturbing adjacent bytes.
TTL-compatible I/O	Meets VIH ≥2.4 V and VIL ≤0.4 V thresholds - interoperates directly with legacy 3.3 V microcontrollers and CPLDs.
OR-tie capable outputs	Three-state DQ outputs support wired-OR bus architectures for memory-mapped peripheral sharing.

Applications

Portable Medical Monitor	Industrial PLC Data Logger
Use Scenario: Battery-powered handheld ECG monitor storing waveform buffers and calibration tables between AC power cycles. IC Role / Device Role / Timing Role: Non-volatile SRAM buffer holding real-time sensor data during sleep mode; retains content on 3 V coin cell at 2.0 V. Use Value: Eliminates need for EEPROM write endurance management or FRAM cost premium while ensuring >10-year data retention under intermittent power.	Use Scenario: DIN-rail mounted controller logging machine status and fault history to local memory before uploading to cloud. IC Role / Device Role / Timing Role: High-reliability scratchpad memory for cyclic data capture; accessed via 16-bit parallel bus from ARM Cortex-M7 MCU. Use Value: 70 ns access enables burst logging at 10 kHz sample rate without DMA stalls; CSP footprint saves space in dense I/O module.
Set-Top Box Configuration Store	Automotive Infotainment Boot Cache
Use Scenario: Storing user preferences, channel lineup, and firmware patch metadata across power cycles in consumer STB. IC Role / Device Role / Timing Role: Fast-access configuration SRAM mapped into CPU's memory space; powered from always-on 3.3 V rail. Use Value: 0.1 µA standby current extends standby battery life to >5 years; byte-select capability allows atomic update of individual settings.	Use Scenario: Caching boot-time UI assets and radio tuning parameters in head unit during cold start before main OS loads. IC Role / Device Role / Timing Role: Low-latency parallel memory providing sub-100 ns read access to critical boot code fragments. Use Value: CSP package withstands automotive thermal cycling (−40°C to +85°C); 70 ns timing meets boot ROM latency requirements.

Portable Medical Monitor

Industrial PLC Data Logger

Use Scenario: Battery-powered handheld ECG monitor storing waveform buffers and calibration tables between AC power cycles.

IC Role / Device Role / Timing Role: Non-volatile SRAM buffer holding real-time sensor data during sleep mode; retains content on 3 V coin cell at 2.0 V.

Use Value: Eliminates need for EEPROM write endurance management or FRAM cost premium while ensuring >10-year data retention under intermittent power.

Use Scenario: DIN-rail mounted controller logging machine status and fault history to local memory before uploading to cloud.

IC Role / Device Role / Timing Role: High-reliability scratchpad memory for cyclic data capture; accessed via 16-bit parallel bus from ARM Cortex-M7 MCU.

Use Value: 70 ns access enables burst logging at 10 kHz sample rate without DMA stalls; CSP footprint saves space in dense I/O module.

Set-Top Box Configuration Store

Automotive Infotainment Boot Cache

Use Scenario: Storing user preferences, channel lineup, and firmware patch metadata across power cycles in consumer STB.

IC Role / Device Role / Timing Role: Fast-access configuration SRAM mapped into CPU's memory space; powered from always-on 3.3 V rail.

Use Value: 0.1 µA standby current extends standby battery life to >5 years; byte-select capability allows atomic update of individual settings.

Use Scenario: Caching boot-time UI assets and radio tuning parameters in head unit during cold start before main OS loads.

IC Role / Device Role / Timing Role: Low-latency parallel memory providing sub-100 ns read access to critical boot code fragments.

Use Value: CSP package withstands automotive thermal cycling (−40°C to +85°C); 70 ns timing meets boot ROM latency requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IS61LV816AL-70TQLI	TSOP-44 package (10.16 mm × 18.42 mm), 70 ns access, 3.3 V only (3.135–3.465 V), 1 µA standby current	Larger footprint; higher standby current limits battery backup duration	Preferred where board space permits and legacy TSOP rework is acceptable
AS6C8016-70BIN	SOJ-44 package, 70 ns access, 2.7–3.6 V, 1 µA standby, no BC1#/BC2# byte control	Lacks independent byte enable; requires external logic for partial-word access	Selected when simplified control interface outweighs byte-select requirement

Compared with IS61LV816AL-70TQLI and AS6C8016-70BIN, the M5M5W816WG-70HI#ST offers superior board-area efficiency via CSP, lower standby current for extended battery life, and native byte-select capability - making it optimal for space-constrained, low-power, and partial-word-access designs.

Availability

M5M5W816WG-70HI#ST is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data loggers, set-top box configuration stores, and automotive infotainment boot caches requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for M5M5W816WG-70HI#ST includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Technology Corp. was formed in 2003 through the merger of Hitachi and Mitsubishi Electric's semiconductor businesses, specializing in microcontrollers, analog, power, and memory solutions for industrial and embedded markets.

The M5M5W816WG-70HI#ST belongs to Renesas' legacy low-voltage SRAM product line, engineered for compact, battery-backed memory applications where reliability, minimal standby power, and direct TTL interfacing are critical.

FAQ

What is the maximum operating temperature range for the M5M5W816WG-70HI#ST?

The M5M5W816WG-70HI#ST is rated for industrial temperature operation from −40°C to +85°C. This range is confirmed in the "Version, Operating temperature" table on page 1 of the datasheet, where "-70HI" denotes the 70 ns speed grade with I-version (−40°C to +85°C) qualification. The device maintains full functionality and specified timing across this range.

Does the M5M5W816WG-70HI#ST support true 16-bit parallel access without multiplexing?

Yes, the M5M5W816WG-70HI#ST provides true 16-bit parallel access via dedicated DQ1–DQ16 pins with no address/data multiplexing. Its 524,288 × 16-bit organization and separate A0–A18 address lines allow full word-wide reads/writes in a single cycle - verified in the "DESCRIPTION" section and block diagram on pages 1 and 2 of the datasheet.

Can the M5M5W816WG-70HI#ST retain data when powered at 2.0 V?

Yes, the M5M5W816WG-70HI#ST guarantees data retention at VCC = 2.0 V, as explicitly stated in the "FEATURES" list and detailed in the "POWER DOWN CHARACTERISTICS" section (page 8). This enables reliable battery-backup operation using standard 3 V coin cells, even as their voltage declines.

What is the purpose of the BC1# and BC2# pins on the M5M5W816WG-70HI#ST?

The BC1# and BC2# pins on the M5M5W816WG-70HI#ST provide independent byte-select control: BC1# enables DQ1–DQ8 (lower byte), BC2# enables DQ9–DQ16 (upper byte). As shown in the FUNCTION TABLE (page 2), asserting either pin low while others are active allows partial-word access - eliminating need for external byte-enable logic.

Is the M5M5W816WG-70HI#ST pin-compatible with other members of the M5M5W816 family?

Yes, all M5M5W816WG variants (−55HI, −70HI, −85HI) share identical pinout, package, and signal definitions - differing only in access time (55/70/85 ns) and tested temperature grading. This is confirmed in the "M5M5W816WG - 55HI, 70HI, 85HI" header and PIN CONFIGURATION diagram (page 1), which applies uniformly across the series.

M5M5W816WG-70HI#ST Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

Programmable:: Not Verified

Memory Type:: -

Memory Format:: -

Technology:: -

Memory Size:: -

Memory Organization:: -

Memory Interface:: -

Clock Frequency:: -

Write Cycle Time - Word, Page:: -

Access Time:: -

Voltage - Supply:: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

M5M5W816WG-70HI#ST FAQ

1.How can I place an order for M5M5W816WG-70HI#ST through Aetrix?

Please submit a Request for Quotation (RFQ) for M5M5W816WG-70HI#ST on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for M5M5W816WG-70HI#ST reliable?

The price and inventory of M5M5W816WG-70HI#ST are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M5M5W816WG-70HI#ST is usually 5 days.

3.What payment methods are accepted for M5M5W816WG-70HI#ST?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M5M5W816WG-70HI#ST transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for M5M5W816WG-70HI#ST?

M5M5W816WG-70HI#ST orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your M5M5W816WG-70HI#ST order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for M5M5W816WG-70HI#ST?

For technical support, including M5M5W816WG-70HI#ST datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M5M5W816WG-70HI#ST requirements.

6.How does Aetrix verify that M5M5W816WG-70HI#ST is sourced from the original manufacturer or authorized distributors?

All M5M5W816WG-70HI#ST products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M5M5W816WG-70HI#ST meets industry standards.

7.What is the process for return or replacement of M5M5W816WG-70HI#ST?

All M5M5W816WG-70HI#ST units undergo pre-shipment inspection (PSI). If there is an issue with M5M5W816WG-70HI#ST, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The M5M5W816WG-70HI#ST part is unused and in its original packaging.

Return procedure for M5M5W816WG-70HI#ST:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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