My Inquiry
My Account
Vishay General Semiconductor - Diodes Division MBR30H45PT-E3/45
- Part No.:
- MBR30H45PT-E3/45
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Diode Arrays
- Package:
- TO-220-3
- Datasheet:
-
MBR30H45PT-E3/45.pdf
- Description:
- DIODE ARR SCHOTT 45V 30A TO2203
- Quantity:
- Payment:
- Shipping:
Inventory:9,550
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
MBR30H45PT-E3/45 from Vishay General Semiconductor is a dual common-cathode Schottky rectifier in TO-247AD 3L package, rated for 45 V reverse voltage, 30 A average forward current per diode, and 200 A peak surge current. It delivers low forward voltage drop (0.65 V at 20 A, 125 °C), high-frequency operation, and guardring-enabled overvoltage protection-used in DC/DC converters and polarity protection circuits.
For engineers reviewing the MBR30H45PT-E3/45 datasheet, MBR30H45PT-E3/45 pinout, MBR30H45PT-E3/45 application, or MBR30H45PT-E3/45 equivalent, key selection criteria include its dual common-cathode configuration, 1.4 °C/W junction-to-case thermal resistance, 10 kV/μs dV/dt rating, and suitability for high-efficiency, low-loss switching power supplies operating up to 150 °C junction temperature.
Technical Context
This dual-diode Schottky rectifier integrates two independent anodes sharing one cathode terminal, enabling compact half-wave or freewheeling configurations in space-constrained power stages. Its guardring structure enhances ruggedness against transient overvoltage events without external snubbers.
Designed for high-frequency switching (e.g., >100 kHz), it minimizes conduction losses with VF ≤ 0.65 V at 20 A/125 °C and supports fast recovery (trr not specified but inherent to Schottky architecture). Thermal performance is optimized via low RθJC (1.4 °C/W) and TO-247AD's metal-tab mounting capability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 45 V - Maximum repetitive reverse blocking voltage per diode; defines safe DC/peak AC input range in buck, flyback, or OR-ing circuits. |
| IF(AV) | 30 A - Average forward current per diode at TC = 100 °C; enables continuous 30 A output in thermally managed SMPS designs. |
| IFSM | 200 A - Non-repetitive peak surge current per diode (8.3 ms sine); withstands inrush and fault transients without failure. |
| VF | 0.65 V @ 20 A, 125 °C - Low conduction loss ensures >92 % efficiency in 12 V–48 V output stages at full load and elevated temperature. |
| RθJC | 1.4 °C/W - Junction-to-case thermal resistance per diode; allows direct heatsink mounting for reliable 150 °C max junction operation. |
| dV/dt | 10 000 V/μs - Voltage slew rate immunity; prevents false turn-on during fast-switching node transitions in synchronous rectifiers. |
| TJ max. | +150 °C - Maximum operating junction temperature; supports industrial and telecom environments without derating below 100 °C ambient. |
Pinout & Package
Package: TO-247AD 3L - Isolated metal tab, 3-terminal through-hole power package with matte tin-plated leads, UL 94 V-0 molding compound, and JESD 201 Class 1A whisker resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode 1 | Input terminal for first Schottky diode; connects to high-side switch node or input rail in dual-path rectification. |
| Pin 2 | Cathode (Common) | Shared cathode output for both diodes; ties to output capacitor or ground return in OR-ing and freewheeling topologies. |
| Pin 3 | Anode 2 | Input terminal for second Schottky diode; enables independent control or redundancy in dual-input or phase-split designs. |
Key Features
| Feature | Design Value |
|---|---|
| Guardring protection | Integrated edge termination prevents premature avalanche breakdown under transient overvoltage, eliminating need for external clamping in 48 V bus applications. |
| Low VF at high temperature | 0.65 V @ 20 A, 125 °C ensures stable conduction loss across automotive and industrial temperature ranges without thermal runaway. |
| Solderability compliance | Matte tin leads meet J-STD-002 and JESD 22-B102; supports lead-free reflow and wave soldering up to 275 °C for 10 s without degradation. |
| High surge robustness | 200 A IFSM rating enables reliable operation during cold-start, short-circuit, or hot-swap events in server PSUs and telecom rectifiers. |
Applications
| Server DC/DC Converters | Industrial Motor Drives |
|---|---|
Use Scenario: Secondary-side synchronous rectification in 48 V–12 V isolated buck converters powering CPU/GPU VRMs. IC Role / Device Role / Timing Role: Dual common-cathode Schottky rectifier replacing MOSFETs in low-side freewheeling paths to reduce gate drive complexity and conduction loss. Use Value: 0.65 V VF at 125 °C cuts conduction loss by ~35 % vs. silicon diodes, improving converter efficiency from 90 % to 92.5 % at full load. | Use Scenario: Freewheeling path in three-phase IGBT inverter outputs driving 200–500 W BLDC motors. IC Role / Device Role / Timing Role: Bidirectional clamp diode absorbing inductive kickback during PWM dead-time intervals. Use Value: 10 kV/μs dV/dt rating prevents spurious turn-on during 600 V/ns IGBT switching edges, ensuring clean commutation without shoot-through risk. |
| Telecom Rectifier Modules | Polarity Protection Circuits |
Use Scenario: Input OR-ing diode pair in redundant -48 V DC distribution systems with hot-swap capability. IC Role / Device Role / Timing Role: Dual-anode configuration allows parallel connection of two independent power feeds to single load with automatic source selection. Use Value: Common-cathode topology reduces component count by 1 vs. discrete diodes, while 30 A IF(AV) supports ≥1000 W system-level power delivery. | Use Scenario: Reverse-voltage protection on 24 V auxiliary power inputs for PLC I/O modules and sensor interfaces. IC Role / Device Role / Timing Role: Low-VF Schottky barrier preventing damage during accidental battery reversal or miswiring. Use Value: 0.60 V VF at 20 A/25 °C limits insertion loss to <1.2 W, avoiding thermal shutdown in sealed enclosures with no forced airflow. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STPS3045CGY-TR | TO-247AC package (non-isolated tab), 0.67 V VF @ 20 A/125 °C, same 45 V VRRM and 30 A IF(AV). | Lacks isolation between case and cathode; requires insulating hardware for heatsink mounting in grounded-cathode topologies. | Select when cost sensitivity outweighs isolation requirement and PCB layout accommodates non-isolated thermal path. |
| ON Semiconductor MBR3045CT | TO-220AB package, 0.64 V VF @ 20 A/125 °C, identical electrical specs but higher RθJC (2.5 °C/W) and lower IFSM (175 A). | Lower thermal performance limits continuous current to ≤22 A at 100 °C ambient; unsuitable for high-power density 1U server designs. | Prefer for cost-sensitive, lower-power (<600 W) industrial supplies where TO-220 footprint and thermal margin are acceptable. |
Compared with STPS3045CGY-TR and MBR3045CT, the MBR30H45PT-E3/45 provides superior thermal management (1.4 °C/W), isolated mounting, and higher surge robustness (200 A), making it optimal for high-reliability, high-density power conversion where thermal headroom and layout flexibility are critical.
Availability
MBR30H45PT-E3/45 is available at Aetrix Electronics and suitable for server DC/DC converters, industrial motor drives, and telecom rectifier modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for MBR30H45PT-E3/45 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Intertechnology is a global semiconductor manufacturer specializing in discrete components, passive elements, and sensors, with leadership in power rectification, precision resistors, and optoelectronics.
The MBR30H45PT-E3/45 belongs to Vishay's Power Schottky Rectifier product line, engineered for high-efficiency, high-reliability power conversion in demanding industrial, computing, and communications infrastructure applications.
FAQ
What is the maximum junction temperature rating for the MBR30H45PT-E3/45?
The MBR30H45PT-E3/45 has a maximum junction temperature (TJ max.) of +150 °C, verified per Vishay's datasheet revision 25-Jun-2025. This rating enables reliable operation in high-ambient environments such as enclosed telecom rectifiers or industrial motor drive cabinets. Derating begins above 100 °C case temperature, and the device maintains full 30 A IF(AV) capability up to that point. Thermal design must account for the 1.4 °C/W RθJC to ensure TJ stays within limit under worst-case load and ambient conditions. The MBR30H45PT-E3/45 is not rated for automotive AEC-Q101 qualification.
Does the MBR30H45PT-E3/45 have a common cathode or common anode configuration?
The MBR30H45PT-E3/45 uses a dual common-cathode configuration: Pin 2 is the shared cathode, while Pins 1 and 3 serve as independent anodes. This arrangement simplifies freewheeling and OR-ing circuit layouts by eliminating the need for external cathode tie-points. The TO-247AD 3L package isolates the metal tab (connected to Pin 2) from the mounting surface, allowing direct heatsink attachment without insulation. This configuration is explicitly confirmed in the "Circuit configuration" section of the Vishay datasheet (Doc. #88676).
What is the forward voltage drop of the MBR30H45PT-E3/45 at 20 A and 125 °C?
The MBR30H45PT-E3/45 exhibits a maximum instantaneous forward voltage (VF) of 0.65 V at 20 A and 125 °C, as specified in the Electrical Characteristics table of Vishay's official datasheet. This value is measured per diode under pulsed conditions and reflects real-world conduction loss in high-temperature operating environments. At 25 °C, VF is 0.75 V under the same conditions. The MBR30H45PT-E3/45's low VF directly contributes to reduced power dissipation-approximately 13 W per diode at 20 A-making it suitable for high-efficiency power supplies where thermal management is constrained.
Is the MBR30H45PT-E3/45 RoHS-compliant and halogen-free?
Yes, the MBR30H45PT-E3/45 is RoHS-compliant and halogen-free, as stated in the Mechanical Data section of Vishay's datasheet (Document Number 88676). The molding compound meets UL 94 V-0 flammability rating, and terminals feature matte tin plating compliant with J-STD-002 and JESD 22-B102. The "-E3/45" suffix denotes Vishay's standard commercial-grade, lead-free, and halogen-free construction. No exemptions are applied, and material declarations conform to Vishay's standard categorization per doc?99912.
What is the peak forward surge current rating for the MBR30H45PT-E3/45?
The MBR30H45PT-E3/45 is rated for a peak forward surge current (IFSM) of 200 A per diode, tested using an 8.3 ms single half-sine waveform superimposed on rated load. This rating applies to each of the two integrated Schottky diodes independently. The surge capability is validated at TA = 25 °C and supports robustness against inrush currents during power-up, output short-circuits, and hot-swap events in redundant power systems. The MBR30H45PT-E3/45 maintains this rating across its full operating junction temperature range (-65 °C to +150 °C), as confirmed in the Maximum Ratings table.
MBR30H45PT-E3/45 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Last Time Buy
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 45 V
- Current - Average Rectified (Io) (per Diode):
- 30A
- Voltage - Forward (Vf) (Max) @ If:
- 730 mV @ 30 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 150 µA @ 45 V
- Operating Temperature - Junction:
- -65°C ~ 175°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-3
MBR30H45PT-E3/45 FAQ
1.How can I place an order for MBR30H45PT-E3/45 through Aetrix?
Please submit a Request for Quotation (RFQ) for MBR30H45PT-E3/45 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MBR30H45PT-E3/45 reliable?
The price and inventory of MBR30H45PT-E3/45 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MBR30H45PT-E3/45 is usually 5 days.
3.What payment methods are accepted for MBR30H45PT-E3/45?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MBR30H45PT-E3/45 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MBR30H45PT-E3/45?
MBR30H45PT-E3/45 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MBR30H45PT-E3/45 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MBR30H45PT-E3/45?
For technical support, including MBR30H45PT-E3/45 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MBR30H45PT-E3/45 requirements.
6.How does Aetrix verify that MBR30H45PT-E3/45 is sourced from the original manufacturer or authorized distributors?
All MBR30H45PT-E3/45 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MBR30H45PT-E3/45 meets industry standards.
7.What is the process for return or replacement of MBR30H45PT-E3/45?
All MBR30H45PT-E3/45 units undergo pre-shipment inspection (PSI). If there is an issue with MBR30H45PT-E3/45, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MBR30H45PT-E3/45 part is unused and in its original packaging.
Return procedure for MBR30H45PT-E3/45:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MBR30H45PT-E3/45 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
