Vishay General Semiconductor - Diodes Division MBR745HE3/45
- Part No.:
- MBR745HE3/45
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Single Diodes
- Package:
- TO-220-2
- Datasheet:
-
MBR745HE3/45.pdf
- Description:
- DIODE SCHOTTKY 45V 7.5A TO220AC
- Quantity:
- Payment:

- Shipping:

Inventory:8,011
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
MBR745HE3/45 from Vishay General Semiconductor is a 45 V, 7.5 A average forward current Schottky barrier rectifier in TO-220AC package, featuring 0.57 V forward voltage at 7.5 A and 125 °C junction temperature, 150 A peak surge capability, and guardring-enhanced overvoltage protection-designed for high-efficiency DC/DC converters and switching power supply freewheeling paths.
For engineers reviewing the MBR745HE3/45 datasheet, MBR745HE3/45 pinout, MBR745HE3/45 application, or MBR745HE3/45 equivalent, key selection criteria include low VF at elevated temperature, TO-220AC thermal resistance (3.0 °C/W), reverse leakage at 125 °C (15 mA), and compatibility with 275 °C solder bath per JESD 22-B106.
Technical Context
This device implements a single-die Schottky junction with integrated guardring structure to suppress edge breakdown under transient overvoltage conditions. Its low barrier height enables 0.57 V VF at 7.5 A/125 °C while maintaining 45 V VRRM rating and 10,000 V/μs dV/dt capability.
The TO-220AC package provides direct metal-to-heatsink thermal path with RθJC = 3.0 °C/W, supporting continuous 7.5 A operation up to 110 °C case temperature per derating curve. Junction temperature is rated to +150 °C, with storage extended to +175 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 45 V - maximum repetitive reverse blocking voltage; defines safe operating limit in DC/DC converter output stage |
| IF(AV) | 7.5 A - average forward current at TC = 25 °C; derates linearly above 25 °C case temp |
| VF @ 7.5 A, 125 °C | 0.57 V - low conduction loss enabling >92 % efficiency in 5–12 V output SMPS |
| IFSM | 150 A - non-repetitive surge rating for startup/inrush tolerance in power supplies |
| RθJC | 3.0 °C/W - thermal resistance from junction to case; enables heatsink sizing for 7.5 A continuous operation |
| IR @ 45 V, 125 °C | 15 mA - reverse leakage at max junction temp; impacts standby power in polarity protection circuits |
| TJ max. | +150 °C - maximum junction temperature; sets reliability boundary for high-ambient industrial use |
Pinout & Package
TO-220AC package: isolated mounting tab (Pin 2), anode (Pin 1), cathode connected to tab. Designed for vertical heatsink mounting with ≤10 in-lbs torque.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode | Input terminal for forward conduction; connects to switching node or input rail in freewheeling configuration |
| Pin 2 (Tab) | Cathode / Thermal Path | Electrically and thermally common cathode connection; must be electrically isolated from heatsink unless circuit design requires cathode grounding |
Key Features
| Feature | Design Value |
|---|---|
| Guardring overvoltage protection | Suppresses edge avalanche, enabling stable 45 V blocking without premature breakdown under transient stress |
| Low VF at high temperature | 0.57 V @ 7.5 A/125 °C reduces conduction loss by ~35 % vs. comparable Si diodes at same condition |
| High surge capability | 150 A IFSM supports robustness against inductive kickback in motor drive flyback paths |
| 275 °C solder bath rating | Enables compatibility with lead-free reflow and wave soldering processes per JESD 22-B106 |
| RoHS-compliant E3 suffix | Meets JESD 201 Class 1A whisker test; suitable for commercial-grade long-life deployments |
Applications
| Switching Mode Power Supply Output Rectification | DC/DC Converter Freewheeling Diode |
|---|---|
Use Scenario: Secondary-side rectification in 5–12 V, 50–200 W offline SMPS with synchronous or asynchronous topology. IC Role / Device Role / Timing Role: Unidirectional current path during low-side switch off-time; clamps transformer leakage energy. Use Value: 0.57 V VF at 125 °C minimizes conduction loss, improving full-load efficiency by ≥1.2 % versus standard Schottkys. | Use Scenario: Freewheeling path in buck or flyback converters powering FPGA core rails or telecom modules. IC Role / Device Role / Timing Role: Provides low-loss return path for inductor current during high-side switch off-phase. Use Value: 150 A IFSM withstands peak inductor current surges during load transients without degradation. |
| Polarity Protection Circuit | Reverse Battery Protection in Automotive ECUs |
Use Scenario: Series-connected input protection for industrial PLC I/O modules operating from 24 V DC rails. IC Role / Device Role / Timing Role: Blocks reverse polarity connection while conducting forward current with minimal drop. Use Value: 0.57 V VF ensures <1.4 W power dissipation at 7.5 A, eliminating need for active MOSFET solutions. | Use Scenario: Reverse battery protection in 12 V automotive control units exposed to -14 V jump-start transients. IC Role / Device Role / Timing Role: Anode-to-battery, cathode-to-system; blocks reverse voltage while passing normal load current. Use Value: Guardring structure sustains 45 V reverse bias during cold-crank events without edge breakdown. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STPS745B | Same 45 V VRRM, 7.5 A IF(AV), but VF = 0.62 V @ 7.5 A/125 °C; RθJC = 3.5 °C/W | Slightly higher conduction loss and thermal resistance; less efficient in high-ambient-density layouts | Select when STMicroelectronics sourcing preference applies and 50 mV VF penalty is acceptable |
| SS7P4 | 45 V VRRM, 7 A IF(AV); VF = 0.55 V @ 7 A/125 °C; TO-277 package (surface-mount) | Lower current rating and SMD-only footprint; unsuitable for through-hole heatsinked designs | Choose only for space-constrained PCBs where 0.5 A derating and no mechanical mounting are acceptable |
Compared with STPS745B and SS7P4, the MBR745HE3/45 delivers the lowest VF at full-rated current and highest thermal conductivity in through-hole form, making it optimal for thermally demanding 7.5 A freewheeling and SMPS rectification roles.
Availability
MBR745HE3/45 is available at Aetrix Electronics and suitable for switching mode power supplies, DC/DC converters, and polarity protection circuits requiring stable component supply across industrial, telecom, and automotive electronics programs.
Supply support for MBR745HE3/45 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on high-reliability, high-efficiency power components.
The MBR7xx series targets high-frequency, high-efficiency power conversion systems, delivering optimized Schottky performance for cost-sensitive yet thermally demanding applications like server PSUs and industrial DC/DC modules.
FAQ
What is the maximum junction temperature rating for MBR745HE3/45?
The MBR745HE3/45 has a maximum junction temperature (TJ max.) of +150 °C, validated per Vishay's thermal characterization and supported by its TO-220AC package with 3.0 °C/W junction-to-case thermal resistance. This allows reliable operation in industrial environments where ambient temperatures exceed 85 °C, provided heatsinking maintains case temperature within derating limits shown in Figure 1 of the datasheet. The MBR745HE3/45 must not be operated beyond this TJ limit to ensure long-term parametric stability.
Is MBR745HE3/45 RoHS-compliant and qualified for lead-free soldering?
Yes, the MBR745HE3/45 carries the E3 suffix indicating RoHS compliance and qualification per JESD 201 Class 1A whisker testing. It is rated for solder bath temperatures up to 275 °C for 10 seconds per JESD 22-B106, making it compatible with standard lead-free wave and selective soldering processes. The matte tin-plated leads meet J-STD-002 solderability requirements, and the molding compound complies with UL 94 V-0 flammability standards. The MBR745HE3/45 is fully suitable for modern RoHS-compliant manufacturing lines.
How does the guardring feature improve reliability in MBR745HE3/45?
The guardring in the MBR745HE3/45 is a diffusion-engineered region surrounding the main Schottky junction that equalizes electric field distribution at the silicon periphery. This prevents premature edge breakdown under transient overvoltage conditions-such as load dump or inductive switching spikes-thereby enhancing ruggedness without sacrificing forward conduction performance. In practice, this allows the MBR745HE3/45 to sustain rated 45 V reverse voltage even during fast dV/dt events up to 10,000 V/μs, unlike non-guardring Schottkys which may exhibit early leakage or failure. The MBR745HE3/45 leverages this for automotive and industrial applications with harsh electrical environments.
What is the reverse leakage current of MBR745HE3/45 at elevated temperature?
At rated 45 V reverse voltage and 125 °C junction temperature, the MBR745HE3/45 exhibits a maximum reverse current (IR) of 15 mA, as specified in the Electrical Characteristics table. This value is critical for standby power budgeting in polarity protection and OR-ing applications, where leakage directly contributes to quiescent loss. At 25 °C, IR is limited to 0.1 mA-demonstrating strong thermal stability. Designers using the MBR745HE3/45 should verify system-level standby current with this 15 mA worst-case figure at max operating temperature.
Can MBR745HE3/45 replace MBR760HE3/45 in a 45 V design?
No-MBR745HE3/45 and MBR760HE3/45 are distinct variants: the former is rated for 45 V VRRM, the latter for 60 V. While both share identical package, current rating (7.5 A), and thermal specs, substituting MBR745HE3/45 in a design originally specifying MBR760HE3/45 risks reverse breakdown if system transients exceed 45 V. The MBR745HE3/45 is not a drop-in replacement for MBR760HE3/45. Use MBR745HE3/45 only where the maximum applied reverse voltage remains ≤45 V with adequate margin, as confirmed by worst-case analysis of the specific circuit.
MBR745HE3/45 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- -
- Package/Case:
- TO-220-2
- Packaging:
- Tube
- Product Status:
- Obsolete
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 45 V
- Current - Average Rectified (Io):
- 7.5A
- Voltage - Forward (Vf) (Max) @ If:
- 840 mV @ 15 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 100 µA @ 45 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AC
- Operating Temperature - Junction:
- -65°C ~ 175°C
MBR745HE3/45 FAQ
1.How can I place an order for MBR745HE3/45 through Aetrix?
Please submit a Request for Quotation (RFQ) for MBR745HE3/45 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MBR745HE3/45 reliable?
The price and inventory of MBR745HE3/45 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MBR745HE3/45 is usually 5 days.
3.What payment methods are accepted for MBR745HE3/45?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MBR745HE3/45 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MBR745HE3/45?
MBR745HE3/45 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MBR745HE3/45 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MBR745HE3/45?
For technical support, including MBR745HE3/45 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MBR745HE3/45 requirements.
6.How does Aetrix verify that MBR745HE3/45 is sourced from the original manufacturer or authorized distributors?
All MBR745HE3/45 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MBR745HE3/45 meets industry standards.
7.What is the process for return or replacement of MBR745HE3/45?
All MBR745HE3/45 units undergo pre-shipment inspection (PSI). If there is an issue with MBR745HE3/45, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MBR745HE3/45 part is unused and in its original packaging.
Return procedure for MBR745HE3/45:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MBR745HE3/45 Tags

-
1N4448X-TP
Micro Commercial Co

-
1N4148WX-TP
Micro Commercial Co

-
1N4148TR
onsemi

-
MMSD4148T1G
onsemi

-
MMBD914LT3G
onsemi

-
BAS16HT1G
onsemi

-
1N914BWT
onsemi

-
BAS21LT1G
onsemi

-
LL4148
onsemi

-
BAS16LT1G
onsemi

-
MMSD914T1G
onsemi

-
BAV21W-7-F
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
