My Inquiry
My Account
Vishay General Semiconductor - Diodes Division MBRB10100CT-E3/8W
- Part No.:
- MBRB10100CT-E3/8W
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Diode Arrays
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
MBRB10100CT-E3/8W.pdf
- Description:
- DIODE ARR SCHOTT 100V 5A TO263AB
- Quantity:
- Payment:
- Shipping:
Inventory:5,970
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
MBRB10100CT-E3/8W from Vishay General Semiconductor is a high-voltage Trench MOS Barrier Schottky (TMBS®) rectifier in D2PAK (TO-263AB) package, rated for 100 V repetitive peak reverse voltage, 10 A average forward current, and 150 A non-repetitive surge current. It delivers low 0.65 V forward voltage at 10 A and 125 °C, enabling high-efficiency DC/DC conversion in compact power supplies.
For engineers reviewing the MBRB10100CT-E3/8W datasheet, MBRB10100CT-E3/8W pinout, MBRB10100CT-E3/8W application, or MBRB10100CT-E3/8W equivalent, key selection criteria include its 100 V VRRM, 2.0 °C/W junction-to-case thermal resistance, 100 μA max reverse leakage at 25 °C, and suitability for high-frequency freewheeling and polarity protection circuits requiring low conduction loss.
Technical Context
This device uses trench MOS Schottky architecture to achieve lower forward voltage and higher surge capability than planar Schottky diodes. Its 100 V rating targets mid-voltage industrial and telecom power rails, while the D2PAK thermal design supports surface-mount operation with heatsink attachment via the exposed drain tab.
The MBRB10100CT-E3/8W features a single common-cathode dual-die configuration (denoted by "CT"), with two anodes sharing one cathode terminal. It meets J-STD-020 MSL Level 1 and JESD201 Class 1A whisker testing, confirming robustness for lead-free reflow assembly.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 100 V - supports input rails up to 85 V DC with safety margin in SMPS front-end rectification |
| IF(AV) | 10 A at TC = 133 °C - enables continuous conduction mode operation in 100 W–200 W converters |
| VF | 0.65 V @ 10 A, 125 °C - reduces conduction loss by ~30% vs. standard Schottky at same current/temp |
| IFSM | 150 A @ 8.3 ms - withstands startup surges and transient overloads without failure |
| RθJC | 2.0 °C/W - allows direct heatsink mounting to sustain full current at ≤125 °C junction temperature |
| IR | 6.0 mA @ 100 V, 125 °C - low leakage preserves efficiency in high-temp environments like enclosed PSUs |
Pinout & Package
Package: D2PAK (TO-263AB), surface-mount with exposed metal drain tab (Pin 3) acting as thermal and electrical connection point. Molded compound complies with UL 94 V-0; matte tin-plated leads meet J-STD-002 solderability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode 1 | Input terminal for first diode element; connects to switching node or input rail |
| Pin 2 | Anode 2 | Input terminal for second diode element; enables dual-input or phase-split configurations |
| Pin 3 (Heatsink Tab) | Cathode (Common) | Shared cathode output and primary thermal path; must be electrically connected to system ground or output return |
Key Features
| Feature | Design Value |
|---|---|
| Trench MOS Schottky technology | Enables 0.65 V VF at 10 A/125 °C - lowers power dissipation vs. planar Schottky alternatives |
| Common-cathode dual-diode (CT) configuration | Reduces component count in center-tapped transformer or dual-phase rectifier designs |
| Junction-to-case thermal resistance of 2.0 °C/W | Permits >90% of rated current handling with minimal heatsink area in space-constrained layouts |
| MSL Level 1, 245 °C peak reflow compatibility | Supports single-pass lead-free assembly without moisture sensitivity concerns |
Applications
| Switch-Mode Power Supply Output Rectification | DC/DC Converter Freewheeling Diode |
|---|---|
Use Scenario: Secondary-side synchronous rectification replacement in 48 V input telecom PSUs delivering 12 V/10 A output. IC Role / Device Role / Timing Role: High-efficiency uncontrolled rectifier replacing MOSFET+driver complexity. Use Value: Achieves >92% efficiency at full load due to 0.65 V VF, reducing thermal stress on PCB layout. | Use Scenario: Buck converter operating at 300 kHz with 24 V input, 5 V/8 A output in industrial PLC power module. IC Role / Device Role / Timing Role: Freewheeling path during low-side switch off-time. Use Value: Minimizes reverse recovery loss and EMI generation with zero Qrr, enabling stable high-frequency operation. |
| Polarity Protection Circuit | OR-ing Diode in Redundant Power Supplies |
Use Scenario: Input protection for 24 V embedded controller board exposed to field wiring reversals. IC Role / Device Role / Timing Role: Series blocking diode preventing damage from reverse battery connection. Use Value: Low 0.65 V drop preserves >97% of available input voltage under full 10 A load. | Use Scenario: Dual 28 V hot-swap power inputs feeding a common 28 V backplane in avionics subsystem. IC Role / Device Role / Timing Role: Isolates faulted supply while maintaining uninterrupted load current. Use Value: Dual-anode structure allows independent input paths sharing single low-loss cathode return. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STPS10H100CG-TR | 100 V, 10 A, TO-263AB, VF = 0.72 V @ 10 A/125 °C, RθJC = 2.5 °C/W | Higher forward drop and thermal resistance reduce efficiency in thermally constrained designs | Acceptable where 70 mV higher VF and 0.5 °C/W higher RθJC are tolerable |
| ON Semiconductor NRVB10100CTT4G | 100 V, 10 A, D2PAK, VF = 0.70 V @ 10 A/125 °C, IR = 10 mA @ 125 °C | Higher 10 mA reverse leakage at 125 °C increases standby loss in always-on systems | Suitable for cost-sensitive applications where leakage <6 mA is not critical |
Compared with STPS10H100CG-TR and NRVB10100CTT4G, the MBRB10100CT-E3/8W offers the lowest forward voltage and tightest reverse leakage at elevated temperature, making it preferred for high-efficiency, thermally demanding 100 V rectification tasks where thermal management headroom is limited.
Availability
MBRB10100CT-E3/8W is available at Aetrix Electronics and suitable for switching mode power supplies, DC/DC converters, and polarity protection circuits requiring stable component supply across industrial, telecom, and embedded control programs.
Supply support for MBRB10100CT-E3/8W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on reliability and performance in harsh environments.
The TMBS® product line delivers trench-based Schottky rectifiers optimized for high-voltage, high-current applications where low forward voltage and robust surge capability are essential - particularly in server PSUs, telecom infrastructure, and industrial automation power stages.
FAQ
What is the maximum junction temperature rating for the MBRB10100CT-E3/8W?
The MBRB10100CT-E3/8W has a maximum junction temperature (TJ) of +150 °C, verified per absolute maximum ratings in the Vishay datasheet. This rating enables reliable operation in high-ambient environments such as enclosed power supplies or industrial enclosures, provided thermal design maintains junction temperature below this limit using the specified RθJC = 2.0 °C/W path to heatsink.
Does the MBRB10100CT-E3/8W have a common-cathode configuration?
Yes, the MBRB10100CT-E3/8W is a common-cathode dual-diode device ("CT" suffix). Pins 1 and 2 are independent anodes, while Pin 3 (the exposed heatsink tab) serves as the shared cathode terminal. This configuration supports center-tapped transformer rectification, dual-input redundancy, or OR-ing topologies without external parallel connections.
What is the reverse leakage current of the MBRB10100CT-E3/8W at 125 °C?
At 100 V reverse voltage and 125 °C junction temperature, the MBRB10100CT-E3/8W exhibits a maximum reverse current (IR) of 6.0 mA, as specified in the Vishay Electrical Characteristics table. This low leakage supports energy-efficient standby operation in always-on power systems where quiescent loss must be minimized.
Is the MBRB10100CT-E3/8W RoHS-compliant and halogen-free?
Yes, the MBRB10100CT-E3/8W is RoHS-compliant and halogen-free, consistent with Vishay's M3-grade commercial packaging. The device meets JESD201 Class 1A whisker resistance and J-STD-020 MSL Level 1, supporting lead-free reflow assembly up to 245 °C peak temperature without preconditioning.
What is the thermal resistance from junction to case (RθJC) for the MBRB10100CT-E3/8W?
The MBRB10100CT-E3/8W has a typical junction-to-case thermal resistance (RθJC) of 2.0 °C/W, measured from die junction to the exposed metal tab (Pin 3). This value is critical for thermal design - it confirms that attaching the tab directly to a heatsink enables sustained 10 A operation with ≤20 °C temperature rise above heatsink temperature.
MBRB10100CT-E3/8W Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- TMBS®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io) (per Diode):
- 5A
- Voltage - Forward (Vf) (Max) @ If:
- 850 mV @ 5 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 100 µA @ 100 V
- Operating Temperature - Junction:
- -65°C ~ 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263AB (D2PAK)
MBRB10100CT-E3/8W FAQ
1.How can I place an order for MBRB10100CT-E3/8W through Aetrix?
Please submit a Request for Quotation (RFQ) for MBRB10100CT-E3/8W on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MBRB10100CT-E3/8W reliable?
The price and inventory of MBRB10100CT-E3/8W are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MBRB10100CT-E3/8W is usually 5 days.
3.What payment methods are accepted for MBRB10100CT-E3/8W?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MBRB10100CT-E3/8W transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MBRB10100CT-E3/8W?
MBRB10100CT-E3/8W orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MBRB10100CT-E3/8W order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MBRB10100CT-E3/8W?
For technical support, including MBRB10100CT-E3/8W datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MBRB10100CT-E3/8W requirements.
6.How does Aetrix verify that MBRB10100CT-E3/8W is sourced from the original manufacturer or authorized distributors?
All MBRB10100CT-E3/8W products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MBRB10100CT-E3/8W meets industry standards.
7.What is the process for return or replacement of MBRB10100CT-E3/8W?
All MBRB10100CT-E3/8W units undergo pre-shipment inspection (PSI). If there is an issue with MBRB10100CT-E3/8W, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MBRB10100CT-E3/8W part is unused and in its original packaging.
Return procedure for MBRB10100CT-E3/8W:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MBRB10100CT-E3/8W Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
