Vishay General Semiconductor - Diodes Division MBRB10100-M3/4W
- Part No.:
- MBRB10100-M3/4W
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Single Diodes
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
MBRB10100-M3/4W.pdf
- Description:
- DIODE SCHOTTKY 100V 10A TO263AB
- Quantity:
- Payment:

- Shipping:

Inventory:5,685
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Product details
Overview
MBRB10100-M3/4W from Vishay General Semiconductor is a high-voltage Trench MOS Barrier Schottky (TMBS®) rectifier in D2PAK (TO-263AB) package, rated for 100 V repetitive peak reverse voltage, 10 A average forward current, and 150 A surge capability. It delivers low 0.65 V forward voltage at 10 A and 125 °C, enabling high-efficiency operation in DC/DC converters and switching power supplies.
For engineers reviewing the MBRB10100-M3/4W datasheet, MBRB10100-M3/4W pinout, MBRB10100-M3/4W application, or MBRB10100-M3/4W equivalent, key selection criteria include its 100 V VRRM, 2.0 °C/W junction-to-case thermal resistance, MSL Level 1 rating, halogen-free RoHS-compliant construction, and suitability for high-frequency freewheeling and polarity protection circuits.
Technical Context
This TMBS® rectifier uses trench MOS Schottky architecture to achieve lower forward voltage and higher surge robustness than planar Schottky diodes. Its 100 V blocking rating and 150 A IFSM support high-reliability operation in industrial SMPS and automotive auxiliary power rails.
The device operates across -65 °C to +150 °C junction temperature range with 10 kV/μs dV/dt rating and exhibits <100 μA reverse leakage at 25 °C - critical for low-power standby and energy-sensitive designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 100 V - supports input rectification up to 100 V DC or 70 V RMS AC without breakdown |
| IF(AV) | 10 A at TC = 133 °C - enables continuous conduction in compact heatsinked layouts |
| VF | 0.65 V at 10 A, 125 °C - reduces conduction losses by ~30% vs. standard Schottky diodes at same current/temp |
| IFSM | 150 A (8.3 ms half-sine) - withstands inrush and transient overloads in DC/DC startup and fault conditions |
| RθJC | 2.0 °C/W - allows direct heatsink mounting for thermal management without additional interface layers |
| TJ max. | +150 °C - permits operation in high-ambient environments such as under-hood automotive or enclosed industrial enclosures |
Pinout & Package
Package: D2PAK (TO-263AB), surface-mount, single-diode configuration with exposed metal tab (pin 3) serving as cathode and thermal path. Matte tin-plated leads meet J-STD-002 solderability requirements.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode | Input terminal for forward current flow; connects to unregulated or switched input rail |
| Pin 2 | Cathode | Output terminal; electrically tied to exposed heatsink tab (Pin 3) for low-inductance return path |
| Pin 3 (Tab) | Cathode / Thermal Interface | Primary heat dissipation path; must be soldered to PCB copper pour or heatsink for RθJC = 2.0 °C/W performance |
Key Features
| Feature | Design Value |
|---|---|
| Trench MOS Schottky technology | Enables 100 V blocking with Schottky-like VF, eliminating need for slower, lossier PN junction rectifiers |
| MSL Level 1, 245 °C peak reflow | Supports standard lead-free SMT assembly without moisture-related popcorning or delamination |
| Halogen-free, RoHS-compliant (M3 suffix) | Meets environmental compliance requirements for EU, China, and global electronics markets |
| 10 kV/μs dV/dt rating | Prevents false turn-on during fast-switching transients in synchronous rectifier and LLC resonant topologies |
Applications
| Switch-Mode Power Supply Output Rectification | Automotive DC/DC Converter Freewheeling |
|---|---|
Use Scenario: Secondary-side rectification in 48 V–60 V output isolated flyback or forward converters. IC Role / Device Role / Timing Role: Unidirectional current steering diode providing low-loss conduction path during transformer demagnetization phase. Use Value: 0.65 V VF at 125 °C reduces conduction loss by >1.5 W vs. comparable 100 V Si diode, improving full-load efficiency by ~1.2%. | Use Scenario: Freewheeling path in 12 V–48 V automotive buck converters powering infotainment or ADAS ECUs. IC Role / Device Role / Timing Role: Fast-recovery freewheeling diode clamping inductive kickback during high-side switch off-time. Use Value: 150 A IFSM handles load dump surges; -65 °C to +150 °C rating ensures reliability across engine bay thermal cycles. |
| Polarity Protection in Industrial Power Inputs | High-Frequency Buck Converter Synchronous Rectifier Replacement |
Use Scenario: Reverse-voltage blocking on 24 V/48 V industrial PLC power inputs subject to field wiring errors. IC Role / Device Role / Timing Role: Series-connected protection diode preventing damage from accidental reverse battery connection. Use Value: 100 V VRRM provides 2× safety margin over 48 V nominal; low VF limits insertion loss to <0.7 V at full load. | Use Scenario: Asynchronous rectification in 300 kHz–1 MHz buck regulators where synchronous MOSFET gate drive complexity is undesirable. IC Role / Device Role / Timing Role: High-speed, low-loss replacement for standard Schottky diodes in cost-sensitive high-frequency point-of-load supplies. Use Value: 10 kV/μs dV/dt immunity prevents spurious conduction during fast edge transitions; 0.75 V VF at 20 A/125 °C maintains efficiency at peak current. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STPS10H100CG | 100 V, 10 A, TO-220AC package; higher RθJA (50 °C/W), no MSL Level 1 rating | Requires through-hole mounting and external heatsink; less suitable for automated SMT production | Select when board space allows through-hole layout and thermal design accommodates higher junction rise |
| ON Semiconductor NRVB10100CTT4G | 100 V, 10 A, D2PAK; dual common-cathode configuration; VF = 0.72 V @ 10 A, 125 °C | Offers dual-diode topology for bridge or dual-output use; slightly higher forward drop | Choose when dual-diode functionality or ON Semi supply chain alignment is required |
Compared with STPS10H100CG and NRVB10100CTT4G, the MBRB10100-M3/4W provides superior thermal performance via its 2.0 °C/W RθJC, MSL Level 1 compatibility for lead-free reflow, and lowest VF among 100 V/10 A D2PAK Schottkys - making it optimal for space-constrained, high-efficiency SMT power stages.
Availability
MBRB10100-M3/4W is available at Aetrix Electronics and suitable for switching mode power supplies, automotive DC/DC converters, and industrial polarity protection circuits requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.
Supply support for MBRB10100-M3/4W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on power efficiency and reliability.
The MBRB10100-M3/4W belongs to Vishay's TMBS® high-voltage Schottky rectifier product line, engineered specifically for high-frequency, high-efficiency power conversion in industrial, computing, and automotive systems where low VF and robust surge handling are critical.
FAQ
What is the maximum junction temperature rating for the MBRB10100-M3/4W?
The MBRB10100-M3/4W has a maximum junction temperature (TJ) of +150 °C, verified per Vishay's datasheet revision 23-Feb-2024. This rating enables reliable operation in high-ambient environments such as enclosed power supplies or under-hood automotive locations. Derating curves confirm 10 A IF(AV) is maintained up to TC = 133 °C, and thermal design must ensure junction temperature remains within this limit under worst-case load and ambient conditions. The MBRB10100-M3/4W achieves this with a low 2.0 °C/W RθJC when mounted to an adequate heatsink.
Does the MBRB10100-M3/4W have a halogen-free and RoHS-compliant construction?
Yes, the MBRB10100-M3/4W carries the "M3" suffix, indicating halogen-free molding compound, RoHS compliance, and commercial-grade qualification per Vishay documentation. It meets JESD201 Class 1A whisker testing and UL 94 V-0 flammability standards. The matte tin-plated leads are solderable per J-STD-002 and JESD22-B102. These attributes make the MBRB10100-M3/4W suitable for environmentally regulated markets including EU, China, and North America. Full compliance data is documented in Vishay's material categorization notice (doc?99912).
What is the forward voltage drop of the MBRB10100-M3/4W at 10 A and 125 °C?
The MBRB10100-M3/4W exhibits a maximum forward voltage (VF) of 0.65 V at 10 A and 125 °C, as specified in the Electrical Characteristics table of the official datasheet. This value reflects real-world operating conditions typical in high-power-density converters. At 25 °C, VF rises to 0.80 V under the same current. The low VF directly reduces conduction losses - for example, cutting ~1.3 W of dissipation versus a standard 100 V Si diode at 10 A - thereby improving system efficiency and easing thermal management. This performance is enabled by Vishay's TMBS® trench MOS Schottky architecture.
Is the MBRB10100-M3/4W suitable for lead-free reflow soldering processes?
Yes, the MBRB10100-M3/4W is qualified for lead-free reflow per MSL Level 1 (J-STD-020) with a maximum peak temperature of 245 °C. Its construction - including halogen-free epoxy and matte tin-plated terminals - ensures compatibility with standard Pb-free SMT assembly lines. No pre-baking is required prior to reflow. The device's thermal resistance profile (RθJC = 2.0 °C/W) also supports rapid heat extraction during soldering, minimizing thermal stress. This makes the MBRB10100-M3/4W ideal for high-volume, automated manufacturing of industrial and automotive power modules.
How does the MBRB10100-M3/4W differ from the MBRB1090-M3/4W?
The MBRB10100-M3/4W and MBRB1090-M3/4W share identical package (D2PAK), thermal specs, and construction, but differ in maximum repetitive peak reverse voltage: 100 V vs. 90 V. All other key parameters - IF(AV) = 10 A, IFSM = 150 A, VF = 0.65 V @ 10 A/125 °C, and RθJC = 2.0 °C/W - are identical. The MBRB10100-M3/4W is selected when 100 V blocking margin is required, such as in 48 V systems with high line transients or 60 V nominal rails. Designers should verify that the 10 V higher VRRM justifies any potential cost or availability trade-off versus the MBRB1090-M3/4W in their specific application.
MBRB10100-M3/4W Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io):
- 10A
- Voltage - Forward (Vf) (Max) @ If:
- 800 mV @ 10 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 100 µA @ 100 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263AB (D2PAK)
- Operating Temperature - Junction:
- -65°C ~ 150°C
MBRB10100-M3/4W FAQ
1.How can I place an order for MBRB10100-M3/4W through Aetrix?
Please submit a Request for Quotation (RFQ) for MBRB10100-M3/4W on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MBRB10100-M3/4W reliable?
The price and inventory of MBRB10100-M3/4W are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MBRB10100-M3/4W is usually 5 days.
3.What payment methods are accepted for MBRB10100-M3/4W?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MBRB10100-M3/4W transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MBRB10100-M3/4W?
MBRB10100-M3/4W orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MBRB10100-M3/4W order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MBRB10100-M3/4W?
For technical support, including MBRB10100-M3/4W datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MBRB10100-M3/4W requirements.
6.How does Aetrix verify that MBRB10100-M3/4W is sourced from the original manufacturer or authorized distributors?
All MBRB10100-M3/4W products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MBRB10100-M3/4W meets industry standards.
7.What is the process for return or replacement of MBRB10100-M3/4W?
All MBRB10100-M3/4W units undergo pre-shipment inspection (PSI). If there is an issue with MBRB10100-M3/4W, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MBRB10100-M3/4W part is unused and in its original packaging.
Return procedure for MBRB10100-M3/4W:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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