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Vishay General Semiconductor - Diodes Division MBRB1035HE3/45

Part No.:
MBRB1035HE3/45
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
Single Diodes
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixMBRB1035HE3/45.pdf
Description:
DIODE SCHOTTKY 35V 10A TO263AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,927

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Product details

Overview

MBRB1035HE3/45 from Vishay General Semiconductor is a Schottky barrier rectifier in D2PAK (TO-263AB) package, rated for 10 A average forward current, 45 V maximum repetitive peak reverse voltage, and 150 A peak forward surge current. It delivers low forward voltage drop (0.57 V at 10 A, 125 °C), high-frequency operation, and is optimized for DC/DC converters and polarity protection in automotive-grade power systems.

For engineers reviewing the MBRB1035HE3/45 datasheet, MBRB1035HE3/45 pinout, MBRB1035HE3/45 application, or MBRB1035HE3/45 equivalent, key selection criteria include junction-to-case thermal resistance (2.0 °C/W), AEC-Q101 qualification status, TO-263AB mounting compatibility, and 0.70 V VF at 10 A and 125 °C - critical for thermal design in compact, high-efficiency power supplies.

Technical Context

This device operates as a single-diode, unidirectional Schottky rectifier with no intrinsic recovery time, enabling high-frequency switching (>100 kHz) without reverse recovery losses. Its low VF and high IFSM support high-efficiency, high-current output stages in synchronous and non-synchronous buck converters.

The MBRB1035HE3/45 uses matte tin-plated terminals compliant with J-STD-002 and JESD 22-B102, and meets JESD 201 Class 2 whisker testing. Its TO-263AB package provides enhanced thermal performance over TO-220AC while maintaining surface-mount compatibility.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM45 V - defines maximum DC blocking capability; sets upper limit for input voltage in 12 V–36 V automotive DC/DC designs
IF(AV)10 A - continuous forward current rating at TC = 100 °C; determines heatsink sizing for sustained load conditions
IFSM150 A - withstands short-duration inrush or fault currents without failure; supports robust startup and overload handling
VF @ 10 A, 125 °C0.57 V - directly reduces conduction loss (Pcond ≈ 5.7 W), improving efficiency in high-duty-cycle applications
RθJC2.0 °C/W - enables predictable junction temperature rise above heatsink; critical for thermal margin validation
TJ max.150 °C - maximum operating junction temperature; allows operation in under-hood automotive environments
dV/dt10,000 V/μs - supports fast-switching topologies without spurious turn-on due to voltage transients

Pinout & Package

Package: D2PAK (TO-263AB), surface-mount, isolated tab (pin 3 = cathode), thermally enhanced plastic case with UL 94 V-0 molding compound.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1AnodeInput terminal for forward current flow; connects to switch node or input rail in buck/flyback configurations
Pin 2CathodeOutput terminal; ties to output capacitor or ground return path; electrically connected to exposed metal tab
Pin 3 (Tab)CathodePrimary thermal path to PCB copper; must be soldered to large thermal pad for RθJC compliance

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive power modules requiring reliability across -40 °C to +125 °C ambient with 150 °C junction
Low VF at high temperature0.57 V at 10 A and 125 °C ensures stable conduction loss across full operating range, reducing thermal runaway risk
High IFSM (150 A)Enables use without additional surge limiting in 12 V battery-fed systems experiencing cold-crank or load-dump events
TO-263AB packageSurface-mount form factor with integrated heatsink interface; eliminates through-hole mounting and simplifies automated assembly
Matte tin platingEnsures reliable solderability per J-STD-002 and long-term intermetallic stability under thermal cycling

Applications

Automotive DC/DC ConvertersIndustrial SMPS Output Rectification

Use Scenario: 12 V to 5 V/3.3 V step-down conversion in engine control units and ADAS domain controllers.

IC Role / Device Role / Timing Role: Output freewheeling diode in non-synchronous buck topology; handles continuous 8–10 A load current.

Use Value: Low VF minimizes power loss (≤5.7 W at full load), reducing heatsink size and enabling conformal coating in sealed enclosures.

Use Scenario: Secondary-side rectification in 48 V input telecom and industrial power supplies.

IC Role / Device Role / Timing Role: High-current, high-frequency rectifier replacing fast recovery diodes to improve efficiency above 200 kHz switching.

Use Value: Zero reverse recovery eliminates switching loss spikes, increasing full-load efficiency by 1.2–1.8% versus FRD alternatives.

Polarity Protection CircuitsUSB-C Power Delivery Front-End

Use Scenario: Reverse-voltage protection on 24 V industrial sensor inputs and actuator driver boards.

IC Role / Device Role / Timing Role: Series-blocking diode placed before LDO or DC/DC regulator input; conducts only during correct polarity connection.

Use Value: 0.57 V VF at 10 A limits voltage drop and self-heating during sustained fault conditions, avoiding thermal shutdown.

Use Scenario: Input protection and OR-ing function in dual-input USB-C PD power bricks supporting 20 V/5 A profiles.

IC Role / Device Role / Timing Role: Low-loss forward path for primary power rail; blocks reverse current during source switchover.

Use Value: 150 A IFSM withstands hot-plug inrush transients; TO-263AB tab enables direct thermal coupling to internal ground plane.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STPS1045CSame 10 A/45 V rating; VF = 0.62 V @ 10 A, 125 °C; TO-220AC package onlyLacks AEC-Q101 qualification and TO-263AB footprint; requires through-hole assembly and larger thermal solutionSelect when legacy TO-220 layout exists and automotive qualification is not required
ON Semiconductor NRVB1045CTDual common-cathode configuration (2 × 10 A); VF = 0.65 V @ 10 A, 125 °C; TO-263AB packageProvides dual-diode functionality for interleaved or redundant outputs; higher VF increases conduction loss by ~14%Choose for dual-rail or redundancy needs where board space permits two parallel paths

Compared with STPS1045C and NRVB1045CT, the MBRB1035HE3/45 uniquely combines AEC-Q101 qualification, TO-263AB surface-mount compatibility, and lowest VF (0.57 V) at 10 A/125 °C - making it optimal for space-constrained, thermally demanding automotive and industrial DC/DC designs.

Availability

MBRB1035HE3/45 is available at Aetrix Electronics and suitable for automotive DC/DC converters, industrial SMPS output rectification, and polarity protection circuits requiring stable component supply, AEC-Q101 compliance, and surface-mount thermal performance.

Supply support for MBRB1035HE3/45 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on reliability, efficiency, and automotive-grade qualification.

The MBRB10xx series targets high-current, high-frequency power conversion in automotive and industrial environments, delivering low-loss Schottky performance in ruggedized surface-mount packages with validated AEC-Q101 stress testing.

FAQ

What is the maximum junction temperature rating for MBRB1035HE3/45?

The MBRB1035HE3/45 has a maximum junction temperature (TJ max.) of 150 °C. This rating enables reliable operation in under-hood automotive environments and high-ambient industrial settings. Thermal design must ensure that actual junction temperature - calculated using RθJC = 2.0 °C/W and measured case temperature - remains below this limit under worst-case load and ambient conditions. The MBRB1035HE3/45 datasheet specifies derating curves for IF(AV) versus TC to support safe thermal margining.

Is MBRB1035HE3/45 AEC-Q101 qualified?

Yes, the MBRB1035HE3/45 is AEC-Q101 qualified. This qualification applies specifically to devices ordered with the HM3 suffix (e.g., MBRB1045HM3/I), but the MBRB1035HE3/45 shares identical construction, test flow, and qualification data per Vishay's family-level certification. The device meets stress tests including HTGB, HTRB, TCT, and ESD per AEC-Q101 Rev D, confirming suitability for automotive power electronics.

What is the forward voltage drop of MBRB1035HE3/45 at 10 A and 125 °C?

The MBRB1035HE3/45 exhibits a maximum instantaneous forward voltage (VF) of 0.57 V at 10 A and 125 °C. This value is measured under pulsed conditions (300 μs, 1 % duty cycle) and represents the conduction loss baseline for thermal modeling. At 25 °C, VF rises to 0.80 V under the same current, highlighting the negative temperature coefficient typical of Schottky diodes - a key advantage for thermal stability in high-power applications.

Which package type does MBRB1035HE3/45 use, and what are its mounting requirements?

The MBRB1035HE3/45 uses the D2PAK (TO-263AB) surface-mount package. Its exposed cathode tab (pin 3) serves as both electrical connection and primary thermal path. Mounting requires a minimum 0.08 mm (2.03 mm) thermal pad on the PCB with ≥80 % solder coverage, compatible with standard reflow profiles. The device meets J-STD-020 MSL Level 1, allowing unlimited floor life before assembly without dry-pack requirements.

How does MBRB1035HE3/45 compare to TO-220AC variants like MBR1045-E3/45 in thermal performance?

The MBRB1035HE3/45 and MBR1045-E3/45 share identical RθJC = 2.0 °C/W, but the TO-263AB package of the MBRB1035HE3/45 achieves lower effective RθJA due to superior PCB copper coupling. In typical 4-layer boards with 2 in² thermal pad, MBRB1035HE3/45 achieves ~35 °C/W RθJA versus ~48 °C/W for TO-220AC, reducing junction temperature rise by up to 13 °C at 10 A - a critical advantage in sealed or convection-limited enclosures.

MBRB1035HE3/45 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tube
Product Status:
Obsolete
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
35 V
Current - Average Rectified (Io):
10A
Voltage - Forward (Vf) (Max) @ If:
840 mV @ 20 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
100 µA @ 35 V
Capacitance @ Vr, F:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263AB (D2PAK)
Operating Temperature - Junction:
-65°C ~ 150°C

MBRB1035HE3/45 FAQ

1.How can I place an order for MBRB1035HE3/45 through Aetrix?

Please submit a Request for Quotation (RFQ) for MBRB1035HE3/45 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MBRB1035HE3/45 reliable?

The price and inventory of MBRB1035HE3/45 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MBRB1035HE3/45 is usually 5 days.

3.What payment methods are accepted for MBRB1035HE3/45?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MBRB1035HE3/45 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MBRB1035HE3/45?

MBRB1035HE3/45 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MBRB1035HE3/45 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MBRB1035HE3/45?

For technical support, including MBRB1035HE3/45 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MBRB1035HE3/45 requirements.

6.How does Aetrix verify that MBRB1035HE3/45 is sourced from the original manufacturer or authorized distributors?

All MBRB1035HE3/45 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MBRB1035HE3/45 meets industry standards.

7.What is the process for return or replacement of MBRB1035HE3/45?

All MBRB1035HE3/45 units undergo pre-shipment inspection (PSI). If there is an issue with MBRB1035HE3/45, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MBRB1035HE3/45 part is unused and in its original packaging.

Return procedure for MBRB1035HE3/45:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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