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Vishay General Semiconductor - Diodes Division MBRB10H100CT-E3/81
- Part No.:
- MBRB10H100CT-E3/81
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Diode Arrays
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
MBRB10H100CT-E3/81.pdf
- Description:
- DIODE ARR SCHOTT 100V 5A TO263AB
- Quantity:
- Payment:
- Shipping:
Inventory:2,696
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Product details
Overview
MBRB10H100CT-E3/81 from Vishay General Semiconductor is a dual common-cathode high-voltage Schottky rectifier in D2PAK (TO-263AB) package, rated for 100 V repetitive peak reverse voltage, 5 A average forward current per diode, and 150 A non-repetitive surge current. It features low forward voltage drop (0.61 V at 5 A, 125 °C), low leakage (3.5 μA at 25 °C), and operates up to 175 °C junction temperature - ideal for high-frequency DC/DC converters and switching power supplies.
For engineers reviewing the MBRB10H100CT-E3/81 datasheet, MBRB10H100CT-E3/81 pinout, MBRB10H100CT-E3/81 application, or MBRB10H100CT-E3/81 equivalent, key selection criteria include thermal resistance (2.2 °C/W per diode), guardring-enhanced overvoltage protection, RoHS-compliant matte tin plating, and J-STD-020 MSL Level 1 rating for surface-mount reflow compatibility.
Technical Context
This dual-diode Schottky rectifier uses high-barrier technology to maintain stable forward voltage and low leakage across wide temperature ranges (–65 °C to +175 °C). Its common-cathode configuration supports independent anode control while sharing a thermally efficient cathode tab for PCB heat dissipation.
The device is optimized for high-frequency operation with fast recovery (no stored charge), 10,000 V/μs dV/dt rating, and low junction capacitance - enabling use in synchronous rectification, freewheeling paths, and polarity protection where low conduction loss and minimal switching loss are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 100 V - Maximum repetitive reverse blocking capability without breakdown |
| IF(AV) per diode | 5 A at TC = 105 °C - Continuous forward current rating per die under heatsink conditions |
| VF @ 5 A, 125 °C | 0.61 V - Low conduction loss enabling >92% efficiency in 12 V–48 V DC/DC stages |
| IR @ 100 V, 25 °C | 3.5 μA - Minimal leakage preserves standby power integrity in always-on systems |
| IFSM per diode | 150 A (8.3 ms half-sine) - Robust surge handling during startup or load transients |
| RθJC per diode | 2.2 °C/W - Enables direct heatsinking via cathode pad for thermal management in compact layouts |
| TJ max. | 175 °C - Extended operating range supports automotive under-hood and industrial ambient environments |
Pinout & Package
Package: D2PAK (TO-263AB), surface-mount, single-row 3-pin outline with exposed cathode pad for thermal and electrical connection. Matte tin-plated leads meet J-STD-002 solderability and JESD 201 Class 1A whisker resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Anode 1) | Anode of first Schottky diode | Input terminal for first rectification path; electrically isolated from Pin 2 |
| Pin 2 (Anode 2) | Anode of second Schottky diode | Independent input for dual-channel or phase-split rectification |
| Pin 3 (Cathode) | Common cathode connection | Shared output node and primary thermal interface; must be soldered to large copper pour |
Key Features
| Feature | Design Value |
|---|---|
| High-barrier Schottky technology | Enables stable VF and IR performance up to 175 °C junction temperature |
| Integrated guardring | Prevents edge breakdown under transient overvoltage, improving reliability in unregulated inputs |
| MSL Level 1 (J-STD-020) | Allows standard reflow profiles without baking; peak temperature tolerance up to 245 °C |
| Dual common-cathode topology | Reduces component count vs. discrete diodes; simplifies layout for dual-rail or interleaved converters |
| RoHS-compliant, halogen-free option available | M3 suffix variant meets strict environmental compliance for automotive and industrial end-equipment |
Applications
| Server VRM Output Stage | Industrial DC/DC Converter |
|---|---|
|
Use Scenario: High-current, high-efficiency 12 V → 1 V conversion for CPU/GPU power delivery. IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter output stage. Use Value: 0.61 V VF at 125 °C reduces conduction loss by ~25% vs. standard Schottkys, directly lowering thermal load on MOSFETs and heatsinks. |
Use Scenario: 48 V input to 24 V/12 V isolated DC/DC modules in factory automation controllers. IC Role / Device Role / Timing Role: Secondary-side freewheeling diode in forward or flyback topologies. Use Value: 150 A IFSM withstands inrush during cold-start; 2.2 °C/W RθJC enables compact thermal design without external heatsinks. |
| Telecom AC-DC Front-End | Polarity Protection Circuit |
|
Use Scenario: PFC boost output rectification in 1 kW telecom rectifiers operating at 100 kHz switching frequency. IC Role / Device Role / Timing Role: High-voltage output rectifier handling continuous 10 A total (5 A per diode). Use Value: 100 V VRRM accommodates reflected spikes in discontinuous conduction mode; low CJ minimizes switching losses at high frequency. |
Use Scenario: Reverse-voltage protection for 24 V industrial sensors and actuators connected to shared field wiring. IC Role / Device Role / Timing Role: Low-loss series-blocking diode in power input path. Use Value: 3.5 μA IR at 25 °C ensures <1 μW standby dissipation; common-cathode layout allows dual-input redundancy (e.g., main + backup supply). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STPS10H100CG | Same 100 V VRRM, 5 A per diode, but TO-220FP package; RθJC = 3.0 °C/W (higher thermal resistance) | Requires mechanical mounting hardware; less suitable for high-density SMT designs | Preferred when through-hole assembly or legacy footprint compatibility is required |
| ON Semiconductor NRVB10100CTT4G | 100 V VRRM, 5 A per diode, D2PAK package; VF = 0.72 V @ 5 A, 125 °C (0.11 V higher) | Higher conduction loss increases thermal stress in high-duty-cycle applications | Valid alternative where cost sensitivity outweighs marginal efficiency gain of MBRB10H100CT-E3/81 |
Compared with STPS10H100CG and NRVB10100CTT4G, MBRB10H100CT-E3/81 delivers superior thermal performance (2.2 vs. 3.0/2.5 °C/W) and lowest forward voltage in its class - making it optimal for space-constrained, thermally demanding SMT power stages where efficiency and reliability are prioritized.
Availability
MBRB10H100CT-E3/81 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, and telecom AC-DC front-ends requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for MBRB10H100CT-E3/81 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on high-reliability, high-efficiency power components.
The MBRB10H100CT-E3/81 belongs to Vishay's high-voltage Schottky rectifier family, engineered specifically for high-frequency switching power supplies where low VF, high TJ capability, and robust surge immunity are mandatory.
FAQ
What is the maximum junction temperature rating for MBRB10H100CT-E3/81?
The MBRB10H100CT-E3/81 has a maximum junction temperature (TJ) of +175 °C, verified per Vishay's datasheet revision 01-Apr-2026. This rating enables reliable operation in under-hood automotive, industrial motor drives, and high-ambient telecom equipment where thermal headroom is constrained. The device maintains specified VF and IR performance up to this limit.
Is MBRB10H100CT-E3/81 pin-compatible with MBR10H100CT-E3/45?
No - MBRB10H100CT-E3/81 uses the D2PAK (TO-263AB) surface-mount package with 3-pin layout and exposed cathode pad, whereas MBR10H100CT-E3/45 is in TO-220AB through-hole package. Pin numbering and mechanical footprint differ; PCB redesign is required for substitution. Both share identical electrical specs and dual common-cathode topology.
Does MBRB10H100CT-E3/81 require a heatsink in typical applications?
MBRB10H100CT-E3/81 does not require an external heatsink when mounted on ≥1 in² (6.5 cm²) 2-oz copper with thermal vias, thanks to its 2.2 °C/W RθJC and low VF. In 5 A continuous per diode operation at 100 °C ambient, junction temperature stays below 135 °C. External heatsinking is recommended only for >7 A per diode or enclosed, low-airflow environments.
What is the meaning of the "-E3/81" suffix in MBRB10H100CT-E3/81?
The "-E3" suffix indicates RoHS-compliant, commercial-grade construction with matte tin-plated leads. The "/81" denotes tape-and-reel packaging with 800 units per reel - distinct from the "/45" tube packaging used for the TO-220AB variant. This format supports automated SMT placement and is qualified per J-STD-020 MSL Level 1.
How does the guardring feature improve reliability of MBRB10H100CT-E3/81?
The integrated guardring in MBRB10H100CT-E3/81 prevents premature edge breakdown during voltage transients by shaping the electric field at the silicon periphery. This extends operational life in applications with line surges or inductive kickback, such as motor drive freewheeling paths or unregulated AC-DC inputs - confirmed by Vishay's accelerated life testing per JESD22-A108.
MBRB10H100CT-E3/81 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io) (per Diode):
- 5A
- Voltage - Forward (Vf) (Max) @ If:
- 760 mV @ 5 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 3.5 µA @ 100 V
- Operating Temperature - Junction:
- -65°C ~ 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263AB (D2PAK)
MBRB10H100CT-E3/81 FAQ
1.How can I place an order for MBRB10H100CT-E3/81 through Aetrix?
Please submit a Request for Quotation (RFQ) for MBRB10H100CT-E3/81 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MBRB10H100CT-E3/81 reliable?
The price and inventory of MBRB10H100CT-E3/81 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MBRB10H100CT-E3/81 is usually 5 days.
3.What payment methods are accepted for MBRB10H100CT-E3/81?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MBRB10H100CT-E3/81 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MBRB10H100CT-E3/81?
MBRB10H100CT-E3/81 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MBRB10H100CT-E3/81 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MBRB10H100CT-E3/81?
For technical support, including MBRB10H100CT-E3/81 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MBRB10H100CT-E3/81 requirements.
6.How does Aetrix verify that MBRB10H100CT-E3/81 is sourced from the original manufacturer or authorized distributors?
All MBRB10H100CT-E3/81 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MBRB10H100CT-E3/81 meets industry standards.
7.What is the process for return or replacement of MBRB10H100CT-E3/81?
All MBRB10H100CT-E3/81 units undergo pre-shipment inspection (PSI). If there is an issue with MBRB10H100CT-E3/81, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MBRB10H100CT-E3/81 part is unused and in its original packaging.
Return procedure for MBRB10H100CT-E3/81:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MBRB10H100CT-E3/81 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
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BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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