My Inquiry
My Account
Vishay General Semiconductor - Diodes Division MBRB30H60CTHE3_B/P
- Part No.:
- MBRB30H60CTHE3_B/P
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Diode Arrays
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
MBRB30H60CTHE3_B/P.pdf
- Description:
- DIODE ARR SCHOTT 60V 15A TO263AB
- Quantity:
- Payment:
- Shipping:
Inventory:4,419
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
MBRB30H60CTHE3_B/P from Vishay General Semiconductor is a dual common-cathode high-voltage Schottky rectifier in D2PAK (TO-263AB) package, rated for 60 V repetitive peak reverse voltage, 30 A total average forward current (15 A per diode), and 275 A peak forward surge current. It delivers low forward voltage drop (0.67 V at 15 A, 125 °C), low leakage (5.0 μA at 25 °C), and operates up to 175 °C junction temperature-ideal for high-frequency DC/DC converters requiring efficient freewheeling and polarity protection.
For engineers reviewing the MBRB30H60CTHE3_B/P datasheet, MBRB30H60CTHE3_B/P pinout, MBRB30H60CTHE3_B/P application, or MBRB30H60CTHE3_B/P equivalent, this device offers verified thermal resistance (RθJC = 1.9 °C/W per diode), guardring-enabled overvoltage protection, and J-STD-020 MSL Level 1 compliance-critical for high-reliability power supply design and industrial embedded systems.
Technical Context
This dual-diode Schottky rectifier uses high-barrier technology to maintain stable forward voltage and low leakage across wide temperature ranges (–65 °C to +175 °C). Its common-cathode configuration enables compact half-bridge or dual-output rectification without external cathode tying.
The D2PAK package provides low thermal resistance (1.9 °C/W) and supports solder reflow up to 245 °C peak (MSL Level 1), while its matte tin-plated terminals meet J-STD-002 and JESD 22-B102 solderability standards. Guardring integration enhances robustness against transient overvoltage events in switching environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 60 V - Maximum repetitive reverse blocking voltage; defines safe operating limit in DC/DC flyback or buck output stages. |
| IF(AV) | 30 A total (15 A per diode) - Continuous average forward current rating per diode; determines steady-state power dissipation capability. |
| IFSM | 275 A - Peak non-repetitive surge current (8.3 ms half-sine); supports inrush and fault-current handling in SMPS startup. |
| VF | 0.67 V @ 15 A, 125 °C - Low conduction loss at elevated temperature; directly reduces power loss and improves system efficiency. |
| IR | 5.0 μA @ 60 V, 25 °C - Ultra-low reverse leakage; minimizes standby power loss in battery-backed or energy-sensitive circuits. |
| TJ max. | 175 °C - Maximum junction temperature; enables operation in thermally constrained enclosures without derating penalties. |
| RθJC | 1.9 °C/W per diode - Thermal resistance from junction to case; enables accurate heatsink sizing for continuous 15 A per diode operation. |
Pinout & Package
Package: D2PAK (TO-263AB), surface-mount, isolated heatsink tab (pin 2), RoHS-compliant, matte tin-plated leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode 1 | Input terminal for first Schottky diode; connects to switching node in synchronous rectifier or freewheeling path. |
| Pin 2 | Cathode (common) | Shared cathode connection for both diodes; electrically tied to exposed metal tab for thermal and electrical grounding. |
| Pin 3 | Anode 2 | Input terminal for second Schottky diode; enables dual independent rectification paths with shared return. |
Key Features
| Feature | Design Value |
|---|---|
| High-barrier Schottky technology | Enables stable VF and IR performance up to 175 °C junction temperature-critical for under-hood or enclosed industrial power supplies. |
| Integrated guardring | Provides edge termination that suppresses avalanche breakdown during voltage transients-improves reliability in unregulated input stages. |
| Low thermal resistance (1.9 °C/W) | Allows direct mounting to PCB copper pour or external heatsink, supporting 15 A continuous per diode without forced air cooling. |
| MSL Level 1 (245 °C peak) | Permits standard lead-free reflow assembly without moisture sensitivity concerns-reduces manufacturing risk and bake requirements. |
Applications
| Server VRM Output Rectification | Industrial DC/DC Converter Freewheeling |
|---|---|
|
Use Scenario: High-current, high-efficiency 12 V → 1 V conversion in server voltage regulator modules. IC Role / Device Role / Timing Role: Dual-anode Schottky rectifier providing synchronous freewheeling path with shared cathode return to ground plane. Use Value: 0.67 V forward drop at 125 °C reduces conduction loss by >15 % vs. standard Schottky alternatives, lowering thermal load on VRM PCB. |
Use Scenario: Isolated 48 V to 24 V DC/DC converter in programmable logic controller (PLC) power stage. IC Role / Device Role / Timing Role: Common-cathode dual rectifier enabling compact dual-output secondary winding rectification. Use Value: 275 A surge rating withstands motor drive back-EMF transients; 175 °C rating ensures operation in sealed control cabinet environments. |
| Telecom AC/DC Front-End Polarity Protection | Automotive Infotainment Power Sequencing |
|
Use Scenario: Reverse-polarity protection at 48 V telecom rectifier output before downstream DC distribution. IC Role / Device Role / Timing Role: Low-leakage (5.0 μA) Schottky diode pair placed in series with positive rail to block reverse current. Use Value: Sub-μA leakage prevents battery drain during standby; 60 V rating covers telecom nominal + tolerance (–48 V ±10 %). |
Use Scenario: Input rectification and reverse-battery protection in automotive head unit 12 V supply path. IC Role / Device Role / Timing Role: Dual-anode configuration allows independent protection of main SoC and display power rails. Use Value: Guardring structure survives load-dump transients (ISO 7637-2 Pulse 5a); TO-263AB footprint supports automated optical inspection (AOI). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STPS30H60CG | Same 60 V VRRM, 30 A IF(AV), but higher VF (0.75 V @ 15 A, 125 °C) and higher RθJC (2.2 °C/W). | Lower efficiency in thermally constrained designs; requires larger heatsink area for equivalent current density. | Preferred where STMicroelectronics supply chain alignment or qualification history is required. |
| ON Semi MBR30H60CT | Identical ratings and D2PAK package, but lacks guardring and has higher IR (10 μA @ 25 °C). | Reduced transient overvoltage immunity; higher leakage may impact low-power standby modes. | Cost-optimized alternative when guardring and ultra-low leakage are not critical in end-equipment validation. |
Compared with STPS30H60CG and MBR30H60CT, the MBRB30H60CTHE3_B/P delivers superior thermal performance (1.9 vs. 2.2 °C/W), lower conduction loss (0.67 vs. 0.75 V), and enhanced transient robustness via integrated guardring-making it optimal for high-density, high-reliability power conversion where efficiency and ruggedness are jointly prioritized.
Availability
MBRB30H60CTHE3_B/P is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, and automotive infotainment power supplies requiring stable component supply, long-term lifecycle support, and traceable RoHS-compliant sourcing.
Supply support for MBRB30H60CTHE3_B/P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on power efficiency and reliability.
The MBRB30H60CTHE3_B/P belongs to Vishay's high-voltage Schottky rectifier family, engineered for high-frequency switching power supplies where low VF, high TJ, and robust surge capability are essential.
FAQ
What is the maximum junction temperature rating for the MBRB30H60CTHE3_B/P?
The MBRB30H60CTHE3_B/P has a maximum junction temperature (TJ) of 175 °C, validated per Vishay's thermal characterization and supported by its high-barrier Schottky construction. This rating allows uninterrupted operation in sealed enclosures or high-ambient environments without derating below full 15 A per diode current. The MBRB30H60CTHE3_B/P maintains stable forward voltage and leakage behavior up to this limit, as confirmed in the 88791 datasheet curves.
Does the MBRB30H60CTHE3_B/P have built-in overvoltage protection?
Yes-the MBRB30H60CTHE3_B/P integrates a guardring structure explicitly designed for overvoltage protection, as stated in the Vishay 88791 datasheet features section. This guardring suppresses edge avalanche during transient voltage spikes, improving ruggedness in switching applications such as DC/DC converters subject to load dump or inductive kickback. The MBRB30H60CTHE3_B/P does not require external TVS devices for basic transient suppression in typical 60 V-rated systems.
Is the MBRB30H60CTHE3_B/P compatible with lead-free reflow processes?
Yes-the MBRB30H60CTHE3_B/P meets J-STD-020 MSL Level 1 with a maximum peak reflow temperature of 245 °C, making it fully compatible with standard lead-free soldering profiles. Its matte tin-plated leads comply with J-STD-002 and JESD 22-B102 solderability standards, and the D2PAK package is qualified for 10 s exposure at 275 °C in solder bath testing. This ensures reliable assembly without pre-bake or special handling for the MBRB30H60CTHE3_B/P.
What is the thermal resistance from junction to case (RθJC) for the MBRB30H60CTHE3_B/P?
The MBRB30H60CTHE3_B/P has a typical junction-to-case thermal resistance (RθJC) of 1.9 °C/W per diode, measured under standard test conditions per JEDEC 51-14. This value is confirmed in the "Thermal Characteristics" table of the Vishay 88791 datasheet and applies to both diodes independently. Designers use this RθJC to calculate heatsink requirements when mounting the MBRB30H60CTHE3_B/P to a copper pour or external heatsink via its exposed tab (pin 2).
How does the MBRB30H60CTHE3_B/P differ from the TO-220AB version MBR30H60CT?
The MBRB30H60CTHE3_B/P uses the D2PAK (TO-263AB) surface-mount package, whereas MBR30H60CT uses the through-hole TO-220AB package. Both share identical electrical specifications (60 V VRRM, 30 A IF(AV), 275 A IFSM), but the MBRB30H60CTHE3_B/P offers lower profile, automated assembly compatibility, and slightly better thermal resistance (1.9 vs. 2.0 °C/W). The MBRB30H60CTHE3_B/P pinout (anode–cathode–anode) differs mechanically from TO-220AB's lead arrangement, requiring distinct PCB layout.
MBRB30H60CTHE3_B/P Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Obsolete
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 60 V
- Current - Average Rectified (Io) (per Diode):
- 15A
- Voltage - Forward (Vf) (Max) @ If:
- 680 mV @ 15 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 60 µA @ 60 V
- Operating Temperature - Junction:
- -65°C ~ 175°C
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263AB
MBRB30H60CTHE3_B/P FAQ
1.How can I place an order for MBRB30H60CTHE3_B/P through Aetrix?
Please submit a Request for Quotation (RFQ) for MBRB30H60CTHE3_B/P on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MBRB30H60CTHE3_B/P reliable?
The price and inventory of MBRB30H60CTHE3_B/P are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MBRB30H60CTHE3_B/P is usually 5 days.
3.What payment methods are accepted for MBRB30H60CTHE3_B/P?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MBRB30H60CTHE3_B/P transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MBRB30H60CTHE3_B/P?
MBRB30H60CTHE3_B/P orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MBRB30H60CTHE3_B/P order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MBRB30H60CTHE3_B/P?
For technical support, including MBRB30H60CTHE3_B/P datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MBRB30H60CTHE3_B/P requirements.
6.How does Aetrix verify that MBRB30H60CTHE3_B/P is sourced from the original manufacturer or authorized distributors?
All MBRB30H60CTHE3_B/P products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MBRB30H60CTHE3_B/P meets industry standards.
7.What is the process for return or replacement of MBRB30H60CTHE3_B/P?
All MBRB30H60CTHE3_B/P units undergo pre-shipment inspection (PSI). If there is an issue with MBRB30H60CTHE3_B/P, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MBRB30H60CTHE3_B/P part is unused and in its original packaging.
Return procedure for MBRB30H60CTHE3_B/P:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MBRB30H60CTHE3_B/P Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
